Download or read book The Development of the Electrically Controlled High Power RF Switch and Its Application to Active FF Pulse Compression Systems written by Jiquan Guo and published by . This book was released on 2008 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Development of the Electrically Controlled High Power RF Switch and Its Application to Active RF Pulse Compression Systems written by and published by . This book was released on 2009 with total page 147 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past decades, there has been increasing interest in pulsed high power RF sources for building high-gradient high-energy particle accelerators. Passive RF pulse compression systems have been used in many applications to match the available RF sources to the loads requiring higher RF power but a shorter pulse. Theoretically, an active RF pulse compression system has the advantage of higher efficiency and compactness over the passive system. However, the key component for such a system an element capable of switching hundreds of megawatts of RF power in a short time compared to the compressed pulse width is still an open problem. In this dissertation, we present a switch module composed of an active window based on the bulk effects in semiconductor, a circular waveguide three-port network and a movable short plane, with the capability to adjust the S-parameters before and after switching. The RF properties of the switch module were analyzed. We give the scaling laws of the multiple-element switch systems, which allow the expansion of the system to a higher power level. We present a novel overmoded design for the circular waveguide three-port network and the associated circular-to-rectangular mode-converter. We also detail the design and synthesis process of this novel mode-converter. We demonstrate an electrically controlled ultra-fast high power X-band RF active window built with PIN diodes on high resistivity silicon. The window is capable of handling multi-megawatt RF power and can switch in 2-300ns with a 1000A current driver. A low power active pulse compression experiment was carried out with the switch module and a 375ns resonant delay line, obtaining 8 times compression gain with a compression ratio of 20.

Download or read book Active RF Pulse Compression Using Electrically Controlled Semiconductor Switches written by and published by . This book was released on 2007 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this paper, we present the recent results of our research on the ultra-high power fast silicon RF switch and its application on active X-Band RF pulse compression systems. This switch is composed of a group of PIN diodes on a high purity silicon wafer and has achieved a switching time of 300ns. The wafer is inserted into a cylindrical waveguide operating in the TE01 mode. Switching is performed by injecting carriers into the bulk silicon through a high current pulse. The RF energy is stored in a room-temperature, high-Q 375 ns delay line; it is then extracted out of the line in a short time using the switch. The pulse compression system has achieved a gain of 8, which is the ratio between output and input power.

Download or read book Active High power RF Switch and Pulse Compression System written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A high-power RF switching device employs a semiconductor wafer positioned in the third port of a three-port RF device. A controllable source of directed energy, such as a suitable laser or electron beam, is aimed at the semiconductor material. When the source is turned on, the energy incident on the wafer induces an electron-hole plasma layer on the wafer, changing the wafer's dielectric constant, turning the third port into a termination for incident RF signals, and. causing all incident RF signals to be reflected from the surface of the wafer. The propagation constant of RF signals through port 3, therefore, can be changed by controlling the beam. By making the RF coupling to the third port as small as necessary, one can reduce the peak electric field on the unexcited silicon surface for any level of input power from port 1, thereby reducing risk of damaging the wafer by RF with high peak power. The switch is useful to the construction of an improved pulse compression system to boost the peak power of microwave tubes driving linear accelerators. In this application, the high-power RF switch is placed at the coupling iris between the charging waveguide and the resonant storage line of a pulse compression system. This optically controlled high power RF pulse compression system can handle hundreds of Megawatts of power at X-band.

Download or read book Active RF Pulse Compression Using An Electrically Controlled Semiconductor Switch written by and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: First we review the theory of active pulse compression systems using resonant delay lines. Then we describe the design of an electrically controlled semiconductor active switch. The switch comprises an active window and an overmoded waveguide three-port network. The active window is based on a four-inch silicon wafer which has 960 PIN diodes. These are spatially combined in an overmoded waveguide. We describe the philosophy and design methodology for the three-port network and the active window. We then present the results of using this device to compress 11.4 GHz RF signals with high compression ratios. We show how the system can be used with amplifier like sources, in which one can change the phase of the source by manipulating the input to the source. We also show how the active switch can be used to compress a pulse from an oscillator like sources, which is not possible with passive pulse compression systems.

Download or read book Development of High Power X Band Semiconductor RF Switch for Pulse Compression Systems of Future Linear Colliders written by and published by . This book was released on 2000 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: We describe development of semiconductor X-band high-power RF switches. The target applications are high-power RF pulse compression systems for future linear colliders. We describe the design methodology of the architecture of the whole switch systems. We present the scaling law that governs the relation between power handling capability and number of elements. We designed and built several active waveguide windows for the active element. The waveguide window is a silicon wafer with an array of four hundred PIN/NIP diodes covering the surface of the window. This waveguide window is located in an over-moded TE01 circular waveguide. The results of high power RF measurements of the active waveguide window are presented. The experiment is performed at power levels of a few megawatts at X-band.

Download or read book Development of Ultra Fast Silicon Switches for Active X Band High Power RF Compression Systems written by J. Guo and published by . This book was released on 2006 with total page 3 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this paper, we present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity SOI (silicon on oxide) wafer. The wafer is inserted into a cylindrical waveguide under TE01 mode, performing switching by injecting carriers into the bulk silicon. Our current design use a CMOS compatible process and the device was fabricated at SNF (Stanford Nanofabrication Facility). This design is able to achieve sub-100ns switching time, while the switching speed can be improved further with 3-D device structure and faster circuit. Power handling capacity of the switch is at the level of 10MW. The switch was designed for active X-band RF pulse compression systems--especially for NLC, but it is also possible to be modified for other applications and other frequencies such as L-band.

Download or read book Active High power RF Pulse Compression Using Optically Switched Resonant Delay Lines written by and published by . This book was released on 1996 with total page 50 pages. Available in PDF, EPUB and Kindle. Book excerpt: The authors present the design and a proof of principle experimental results of an optically controlled high power rf pulse compression system. The design should, in principle, handle few hundreds of Megawatts of power at X-band. The system is based on the switched resonant delay line theory. It employs resonant delay lines as a means of storing rf energy. The coupling to the lines is optimized for maximum energy storage during the charging phase. To discharge the lines, a high power microwave switch increases the coupling to the lines just before the start of the output pulse. The high power microwave switch, required for this system, is realized using optical excitation of an electron-hole plasma layer on the surface of a pure silicon wafer. The switch is designed to operate in the TE01 mode in a circular waveguide to avoid the edge effects present at the interface between the silicon wafer and the supporting waveguide; thus, enhancing its power handling capability.

Download or read book Development of Ultra Fast Silicon Switches for Active X Band High Power RF Compression Systems written by S. Tantawi and published by . This book was released on 2006 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: We present the recent results of our research on the high power ultra-fast silicon RF switches. This switch is composed of a group of PIN diodes on a high purity silicon wafer. The wafer is inserted into a cylindrical waveguide under TE{sub 01} mode, performing switching by injecting carriers into the bulk silicon. Our current design uses a CMOS compatible process and the device was fabricated at SNF (Stanford Nanofabrication Facility). 300 ns switching time has been observed, while the switching speed can be improved further with 3-D device structure and faster driving circuit. Power handling capacity of the switch is at the level of 10 MW. The switch was designed for active X-band RF pulse compression systems--especially for NLC, but it is also possible to be modified for other applications and other frequencies.

Download or read book Development and Advances in Conventional High Power RF Systems written by and published by . This book was released on 1995 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of rf systems capable of producing high peak power (hundreds of megawatts) at relatively short pulse lengths (0.1--5 microseconds) is currently being driven mainly by the requirements of future high energy linear colliders, although there may be applications to industrial, medical and research linacs as well. The production of high peak power rf typically involves four basic elements: a power supply to convert ac from the ''wall plug'' to dc; a modulator, or some sort of switching element, to produce pulsed dc power; an rf source to convert the pulsed dc to pulsed rf power; and possibly an rf pulse compression system to further enhance the peak rf power. Each element in this rf chain from wall plug to accelerating structure must perform with high efficiency in a linear collider application, such that the overall system efficiency is 30% or more. Basic design concepts are discussed for klystrons, modulators and rf pulse compression systems, and their present design status is summarized for applications to proposed linear colliders.

Download or read book New Development in RF Pulse Compression written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Several pulse compression systems have been proposed for future linear collider. Most of these systems require hundreds of kilometers of low-loss waveguide runs. To reduce the waveguide length and improve the efficiency of these systems, components for multimoding, active switches and non-reciprocal elements are being developed. In the multimoded systems a waveguide is utilized several times by sending different signals over different modes. The multimoded components needed for these systems have to be able to handle hundreds of megawatts of rf power at the X-band frequency and above. Consequently, most of these components are overmoded. The authors present the development of multimoded components required for such systems. They also present the development efforts towards overmoded active component such as switches and overmoded non-reciprocal components such as circulators and isolators.

Download or read book OVERMODED HIGH POWER RF MAGNETIC SWITCHES AND CIRCULATORS written by and published by . This book was released on 2002 with total page 3 pages. Available in PDF, EPUB and Kindle. Book excerpt: We present design methodology for active rf magnetic components which are suitable for pulse compression systems of future X-band linear colliders. These components comprise an array of active elements arranged together so that the total electromagnetic field is reduced and the power handling capabilities are increased. The active element of choice is a magnetic material (garnet), which can be switched by changing a biasing magnetic field. A novel design allows these components to operate in the low loss circular waveguide mode TE01. We describe the design methodology, the switching elements and circuits.

Download or read book Switchmode RF Power Amplifiers written by Andrei Grebennikov and published by Newnes. This book was released on 2011-04-01 with total page 443 pages. Available in PDF, EPUB and Kindle. Book excerpt: A majority of people now have a digital mobile device whether it be a cell phone, laptop, or blackberry. Now that we have the mobility we want it to be more versatile and dependable; RF power amplifiers accomplish just that. These amplifiers take a small input and make it stronger and larger creating a wider area of use with a more robust signal. Switching mode RF amplifiers have been theoretically possible for decades, but were largely impractical because they distort analog signals until they are unrecognizable. However, distortion is not an issue with digital signals—like those used by WLANs and digital cell phones—and switching mode RF amplifiers have become a hot area of RF/wireless design. This book explores both the theory behind switching mode RF amplifiers and design techniques for them. *Provides essential design and implementation techniques for use in cma2000, WiMAX, and other digital mobile standards *Both authors have written several articles on the topic and are well known in the industry *Includes specific design equations to greatly simplify the design of switchmode amplifiers

Download or read book Switchmode RF and Microwave Power Amplifiers written by Andrei Grebennikov and published by Academic Press. This book was released on 2012-06-28 with total page 701 pages. Available in PDF, EPUB and Kindle. Book excerpt: Combining solid theoretical discussions with practical design examples, this book is an essential reference on developing RF and microwave switchmode power amplifiers. With this book you will be able to: Design high-efficiency RF and microwave power amplifiers on different types of bipolar and field-effect transistors using well-known and novel theoretical approaches, nonlinear simulation tools, and practical design techniques Design any type of high-efficiency switchmode power amplifiers operating in Class D or E at lower frequencies and in Class E or F and their subclasses at microwave frequencies, with specified output power Understand the theory and practical implementation of load-network design techniques based on lumped and transmission-line elements Combine multi-stage Doherty architecture and switchmode power amplifiers to significantly increase efficiency of the entire radio transmitter Learn the different types of predistortion linearization techniques required to improve the quality of signal transmission in a nonlinear amplifying system New to this edition: Comprehensive overview of different Doherty architectures which are, and will be used in modern communication systems to save power consumption and reduce costs A new chapter on analog and digital predistortion techniques Coverage of broadband Class-F power amplifiers, high-power inverse Class-F power amplifiers for WCDMA systems, broadband Class-E techniques Unique focus on switchmode RF and microwave power amplifiers that are widely used in cellular/wireless, satellite and radar communication systems and which offer major power consumption savings Complete coverage of the new Doherty architecture which offers major efficiencies and savings on power consumption Balances theory with practical implementatation, avoiding a cookbook approach, enabling engineers to develop better designs Trusted content from leading figures in the field with a Foreword of endorsement by Zoya Popovic

Download or read book Government Reports Announcements Index written by and published by . This book was released on 1990 with total page 1282 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High Power Switching written by Ihor Vitkovitsky and published by . This book was released on 1987 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Very Good,No Highlights or Markup,all pages are intact.

Download or read book High Power Plasma Switch for 11 4 GHz Microwave Pulse Compressor written by and published by . This book was released on 2010 with total page 972 pages. Available in PDF, EPUB and Kindle. Book excerpt: Results obtained in several experiments on active RF pulse compression at X-band using a magnicon as the high-power RF source are presented. In these experiments, microwave energy was stored in high-Q TE01 and TE02 modes of two parallel-fed resonators, and then discharged using switches activated with rapidly fired plasma discharge tubes. Designs and high-power tests of several versions of the compressor are described. In these experiments, coherent pulse superposition was demonstrated at a 5-9 MW level of incident power. The compressed pulses observed had powers of 50-70 MW and durations of 40-70 ns. Peak power gains were measured to be in the range of 7:1-11:1 with efficiency in the range of 50-63%.