Download or read book The Design of a GaAs MESFET Temperature Independent Voltage Reference Circuit and the Evaluation of GaAs Large Signal MESFET Models written by Raymond K. Hung and published by . This book was released on 1986 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Design of a GaAs MESFET Temperature Independent Voltage Reference Circuit and the Evaluation of GaAs Large Signal MESET Models written by Raymond K. Hung and published by . This book was released on 1986 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book GaAs MESFET Circuit Design written by Robert Soares and published by Artech House Publishers. This book was released on 1988 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Large Signal Modeling and Analysis of the GaAs MESFET written by Vincent D. Hwang and published by . This book was released on 1986 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this work is to develop a large signal lumped circuit model of the GaAs MESFET to aid in the designs of microwave MESFET circuits. The circuit elements of this model are obtained either directly or indirectly from the DC and RF measurements of the device to be modeled. To analyze this circuit model, a nonlinear circuit simulation computer program is written. This routine is base on a hybrid time-frequency domain iterative algorithm called 'multiple reflection technique'. To improve the speed of analysis, an accelerate convergence scheme is incorporated into the multiple reflection technique for the first time to analyze three terminal device. The validity of the analysis algorithm is first checked by comparing the simulation results of a MESFET with published data. The large signal model developed is then confirmed by comparing the simulation results of a MESFET modeled in this work to the experimental results. (Author).
Download or read book Modeling of Subthreshold Current of GaAs MESFET and the Design of Voltage Reference Circuit written by Pee-Keong Or and published by . This book was released on 1987 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt: The characteristic of the subthreshold current in a GaAs MESFET exhibits a negative exponential function with Vgs. After studying the behavior of this current in this region over a range of temperature and drain bias voltages, a subthreshold current model was developed. The model was implemented in a circuit simulation program called VREFSIM. An arbitrary reference voltage is obtained by a simple selection of different component values. In this project, 2.56 volt and 1.28 volt references were designed and simulated. The simulated temperature coefficients of these two voltage references over a temperature range of -55 to 125 degrees Celsius were 7 and 26 parts-per-million (PPM)/Kelvin, respectively.
Download or read book Characterization Modeling and Circuit Design of GaAs MESFET written by Kang Woo Lee and published by . This book was released on 1984 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Analysis and Modeling of GaAs MESFET s for Linear Integrated Circuit Design written by Mankoo Lee and published by . This book was released on 1990 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET) model including deep-level trap effects has been developed, which is far more accurate than previous equivalent circuit models, for high-speed applications in linear integrated circuit design. A new self-backgating GaAs MESFET model, which can simulate low frequency anomalies, is presented by including deep-level trap effects which cause transconductance reduction and the output conductance and the saturation drain current to increase with the applied signal frequency. This model has been incorporated into PSPICE and includes a time dependent I-V curve model, a capacitance model, a subthreshold current model, an RC network describing the effective substrate-induced capacitance and resistance, and a switching resistance providing device symmetry. An analytical approach is used to derive capacitances which depend on Vgs and Vds and is one which also includes the channel/substrate junction modulation by the self backgating effect. A subthreshold current model is analytically derived by the mobile charge density from the parabolic potential distribution in the cut-off region. Sparameter errors between previous models and measured data in conventional GaAs MESFET's have been reduced by including a transit time delay in the transconductances, gm and gds, by the second order Bessel polynomial approximation. As a convenient extraction method, a new circuit configuration is also proposed for extracting simulated S-parameters which accurately predict measured data. Also, a large-signal GaAs MESFET model for performing nonlinear microwave circuit simulations is described. As a linear IC design vehicle for demonstrating the utility of the model, a 3-stage GaAs operational amplifier has been designed and also has been fabricated with results of a 35 dB open-loop gain at high frequencies and a 4 GHz gain bandwidth product by a conventional half micron MESFET technology. Using this new model, the low frequency anomalies of the GaAs amplifier such as a gain roll-off, a phase notch, and an output current lag are more accurately predicted than with any other previous model. This new self-backgating GaAs MESFET model, which provides accurate voltage dependent capacitances, frequency dependent output conductance, and transit time delay dependent transconductances, can be used to simulate low frequency effects in GaAs linear integrated circuit design.
Download or read book Gallium Arsenide Digital Circuits written by Omar Wing and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide technology has come of age. GaAs integrated circuits are available today as gate arrays with an operating speed in excess of one Gigabits per second. Special purpose GaAs circuits are used in optical fiber digital communications systems for the purpose of regeneration, multiplexing and switching of the optical signals. As advances in fabrication and packaging techniques are made, the operat ing speed will further increase and the cost of production will reach a point where large scale application of GaAs circuits will be economical in these and other systems where speed is paramount. This book is written for students and engineers who wish to enter into this new field of electronics for the first time and who wish to embark on a serious study of the subject of GaAs circuit design. No prior knowledge of GaAs technology is assumed though some previous experience with MOS circuit design will be helpful. A good part of the book is devoted to circuit analysis, to the extent that is possible for non linear circuits. The circuit model of the GaAs transistor is derived from first principles and analytic formulas useful in predicting the approxi mate circuit performance are also derived. Computer simulation is used throughout the book to show the expected performance and to study the effects of parameter variations.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1992 with total page 1572 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book GaAs Technology and Its Impact on Circuits and Systems written by David Haigh and published by Institution of Electrical Engineers. This book was released on 1989 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book captures the essence of developments of Gallium Arsenide technology from the research laboratory to the marketplace along with the dramatic increases in complexity from early single devices to ICs of MSI complexity for both analog and digital applications.
Download or read book An AC Large Signal Model for the GaAs MESFET written by Asher Madjar and published by . This book was released on 1979 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt: An AC large signal model for the GaAs FET is presented. It incorporates the device geometry and semiconductor properties and relates the terminal currents to the instantaneous applied voltages and their time derivatives. The model is efficient and fast when implemented on a digital computer. Its form is suitable for large signal component design and optimization. A power amplifier and an oscillator are analyzed to demonstrate the use of the model. (Author).
Download or read book Microwave GaAs MESFET Nonlinearity and Large signal Modeling written by Yan He and published by . This book was released on 1993 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Large Signal Circuit Design Using GaAs MESFETs written by Rowan Gilmore and published by . This book was released on 1982 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Large Signal GaAs MESFET Model written by Kokab Zakhor and published by . This book was released on 1981 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book An Introduction to GaAs IC Design written by S. J. Harrold and published by . This book was released on 1993 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book GaAs High Speed Devices written by C. Y. Chang and published by John Wiley & Sons. This book was released on 1994-10-28 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.
Download or read book Thermal Models for Low and High power GaAs MESFET Devices written by and published by . This book was released on 1904 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The paper addresses the problem of thermal design of MESFET devices. Two CAD models are pro posed for performance evaluation: a closed-form thermal resistance model and a two-dimensional self-consistent coupled physical model. The two models are complementary and allow both to optimize the geometry and to correctly estimate the small-scale temperature distribution and the influence of heating on the electrical perfor mances, Results from both models are discussed and compared with measurements.
