Download or read book The Conduction Mechanism in Tantalum Pentoxide Thin Films as a Function of Mode of Fabrication Temperature Oxygen Partial Pressure and Structure written by Andreas Gerhard Hegedus and published by . This book was released on 1979 with total page 54 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Tantalum Thin Films written by William Dickson Westwood and published by . This book was released on 1975 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Conduction Mechanisms in Tantalum Oxide as a Function of Rapid Thermal Annealing Temperature written by Brian A. Bontempo and published by . This book was released on 2009 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical and Microstructural Evolution in Sol gel Derived Tantalum Oxide Thin Films written by Michael Walter Russell and published by . This book was released on 1994 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study of the Conduction Mechanism of Amorphous Tantalum Oxide Thin Films written by Hsüeh-ming Wu and published by . This book was released on 1993 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Synthesis and Characterization of Sol gel Derived Tantalum Oxide Tantalum Nitride and Nickel alumina Thin Films written by Gerald Thomas Kraus and published by . This book was released on 1997 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Conduction in Tantalum Oxide Thin Films written by M. W. Jones and published by . This book was released on 1974 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Influence of the Plasma Chemistry and Energetics on the Composition and Structure Evolution of Sputtered Oxide Thin Films written by Stanislav Mráz and published by . This book was released on 2006 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electronic Conduction and Ionic Diffusion in Bi0 5Na0 5 TiO3 Bi0 5K0 5 TiO3 based Thin Films written by Joel Walenza-Slabe and published by . This book was released on 2016 with total page 89 pages. Available in PDF, EPUB and Kindle. Book excerpt: Solid solutions based on the perovskite ferroelectrics Bi0.5Na0.5TiO3 (BNT) and Bi0.5K0.5TiO3 (BKT) might someday replace current Pb-based ferroelectric and piezoelectric devices. This is one goal of the Restrictions on Hazardous Substances (RoHS) guidelines seeking to limit Pb in consumer devices. Although the Bi-based ferroelectrics are well suited to the task for their overall high Curie temperature and good piezoelectric properties, there are still questions about reliability. The primary goal of this research was to advance the understanding of long term reliability in polycrystalline BNT-BKT thin films fabricated by chemical solution deposition (CSD). The constituent cations are highly volatile at the crystallization temperatures, and oxygen vacancies are common to all oxide perovskites. The resulting defects are associated with higher leakage currents, which can reduce long term stability by increasing the frequency of early failures due to localized breakdown events. Research focused on several topics related to electronic and ionic conduction in BNT-BKT thin films. Mn-doping is a well known technique utilized to decrease electronic current in many perovskite ferroelectrics. A study of the steady state leakage current in Mn-doped 80BNT-20BKT films was performed, including 0 up to 2 mol% Mn. Space charge-limited conduction was found in all films, although the onset of strong injection increased with dopant concentration. The 2 mol% Mn films showed only Ohmic conduction beyond 180 °C and 400 kV/cm. Additionally, ionic conduction processes also play a role in fatigue and resistance degradation. High temperature transient currents are believed to be directly related to ionic migration. Analysis of these peaks reveal activation energies and mobilities consistent with migration of oxygen vacancies in the 80BNT-20BKT films. However, the transients for Mn-doped films displayed some unusual characteristic of very short, temperature insensitive transient times. This may indicate that a different mechanism is operating in those films. The binary system (100–x)BNT-xBKT for x=10, 20, 30, and 40 was studied for the steady state leakage current and ionic transport properties. Leakage current decreased dramatically on moving from the rhombohedral x=10~20 films to the tetragonal x=30~40 films. Other correlations included some evidence of incipient texturing of the tetragonal films, as well as decreasing roughness with larger x. The ionic transport properties were again measured in these films. They appear to show a decrease in the mobility of oxygen vacancies with increasing x. This may have implications for improving reliability in the future. The effects of post-annealing at different oxygen partial pressures (pO2) was attempted in order to determine the majority electronic carrier type. All films tested, which included 80BNT-20BKT, 95(80BNT-20BKT)-5Bi(Ni0.5Ti0.5)O3, and 95(80BNT-20BKT)-5BaTiO3, produced results consistent with n-type conduction. Also, while the current is generally space charge-limited, there are several key features of the current density-electric field characteristics which were affected by the post-anneal pO2. Information on the trap density and distribution and the carrier density can be gleaned from analyzing these curves.
Download or read book Tantalum Oxide Thin Films for Microelectronic Applications written by Fang-Xing Jiang and published by . This book was released on 1995 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: "There is a critical demand for new dielectric films having higher dielectric constants, higher dielectric strengths and lower leakage currents for applications such as charge storage capacitors for DRAMs in ULSI and low-inductance decoupling capacitors for the control of simultaneous switching noise (SSN) in high-speed switching ULSI chips. Among these candidates for insulators, tantalum pentoxide has received considerable attention. As earlier as in the 1960's, tantalum oxide has been used as the dielectric in discrete capacitors. Recently, several papers have been reported on the electrical properties of Ta205 films grown by various techniques. It has been reported that the electrical properties, e.g. dielectric constant, leakage current, dielectric strength as well as the nature of the Ta2Os/Si interface, are extremely sensitive to the annealing conditions. At the present time, however, the role of the as-deposited Ta2Os/Si interface is not fully understood. In the present study, a two-step process, consisting two separate depositions and annealing, has been developed to improve the physical and electrical characteristics of reactivity sputtered Ta2Os films. The reactive ion etching (RE) selectivity of Ta2Os to Si, Si02 and Ta in CHF3, CF4 and SF6 with fractions of 02, H2 and Ar has been investigated for IC process applications. The tantalum oxide films were deposited on Si wafers by reactive DC sputtering. The films were characterized for thickness and refractive index using an ellipsometer and their phase was identified using an X-ray diffractometer. The annealing effect on Ta2Oj in oxygen ambient at 800C shows that the Ta205 films crystallize into an orthorhombic phase, condensed with a decrease of thickness and an increase of refractive index. Various capacitor configurations, such as MTM (Al/Ta205/Al) and MIS (Al/Ta20$/p-Si, Al/Ta205/n-Si and Al/Ta2Os/n+-Si), were fabricated to study the nature of Ta2Os/Si interface and the I-V and C-V characteristics. The as-deposited Ta2Os film on p-type Si substrate can sustain an electric field of 3 MV/cm at a current density of 1 u.A/cm2 in the accumulation mode, which is an order higher than that on n-type substrate. The value of apparent dielectric constant of as-deposited Ta2Os film estimated from the Al/Ta205/Al capacitor is 16, however, the value varies from 6 to 10 in MIS capacitors. This shows a evidence strongly that there is a substrate sensitivity for tantalum oxide films. As a result of the two-step process, the dielectric constant of Al/Ta2Os/n+-Si capacitor increases to 21. This value is considerably close to 24 for bulk Ta2Oj. To investigate the RIE selectivity of Ta2Os to Ta, Si and Si02, the Ta2Os film was deposited onto a wafer with three other films, DC sputtered Ta, LPCVD polysilicon, and thermally grown Si02. It is revealed that in SF6 with various fractions of 20% hydrogen or argon, the Ta2Os film shows extremely low etch rate as compared with Si, Ta and Si02, and in CF4 with various fractions of 30% hydrogen or oxygen, the Ta205 film shows a lower etch rate. However, in CHF3 the etch rates of Si and Ta2Os are comparable. The absorption spectrum of deposited tantalum oxide films was also measured. This material can be used for phase shift and attenuation masks, sunglasses and light filters. The as-deposited tantalum oxide films show a high absorbency peak at 217 nm and an additional small peak. at 416 nm with two subpeaks at 286 and 510 nm using spectrophotometer. The high peak becomes broadened and the long wavelength side of the small peak is shifted to short wavelength through annealing. A model of free volume like defect and oxygen vacancy like defect is proposed to explain the change of the absorbency spectrum."--Abstract.
Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Download or read book Dynamics of Engineered Artificial Membranes and Biosensors written by William Hoiles and published by Cambridge University Press. This book was released on 2018-05-03 with total page 475 pages. Available in PDF, EPUB and Kindle. Book excerpt: A state-of-the-art guide to building synthetic membranes for biological devices, covering their construction, measurement, and modelling.
Download or read book Plasma Electrolytic Oxidation PEO Coatings written by Marta Mohedano and published by MDPI. This book was released on 2021-06-02 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: Plasma electrolytic oxidation (PEO), also known as micro-arc oxidation (MAO), functionalizes surfaces, improving the mechanical, thermal, and corrosion performance of metallic substrates, along with other tailored properties (e.g., biocompatibility, catalysis, antibacterial response, self-lubrication, etc.). The extensive field of applications of this technique ranges from structural components, in particular, in the transport sector, to more advanced fields, such as bioengineering. The present Special Issue covers the latest advances in PEO‐coated light alloys for structural (Al, Mg) and biomedical applications (Ti, Mg), with 10 research papers and 1 review from leading research groups around the world.
Download or read book Crystal Structure Electronic and Optical Properties of Epitaxial Alkaline Earth Niobate Thin Films written by Dongyang Wan and published by Springer. This book was released on 2017-09-18 with total page 133 pages. Available in PDF, EPUB and Kindle. Book excerpt: This impressive thesis offers a comprehensive scientific study of the alkaline earth niobates and describes their nonlinear optical properties for the first time. It explores the crystal structure, electrical properties, optical absorption properties, hot carrier dynamics, nonlinear optical property and strain-induced metal to insulator transition of alkaline earth niobates using advanced experimental techniques. These alkaline earth niobates can have a strong plasmon resonance in the visible range due to their large carrier density, and this unique property gives rise to the emergent phenomenon of photocatalysis and nonlinear optical properties. This series of intrinsic plasmonic materials based on niobates, can be used as a photocatalyst to split water under sunlight, a novel saturable absorber in the high-power ultrashort pulsed laser system, and as a sensor in microelectromechanical systems.
Download or read book Chemically Deposited Nanocrystalline Metal Oxide Thin Films written by Fabian I. Ezema and published by Springer Nature. This book was released on 2021-06-26 with total page 926 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book guides beginners in the areas of thin film preparation, characterization, and device making, while providing insight into these areas for experts. As chemically deposited metal oxides are currently gaining attention in development of devices such as solar cells, supercapacitors, batteries, sensors, etc., the book illustrates how the chemical deposition route is emerging as a relatively inexpensive, simple, and convenient solution for large area deposition. The advancement in the nanostructured materials for the development of devices is fully discussed.
Download or read book High Temperature Solid Oxide Fuel Cells for the 21st Century written by Kevin Kendall and published by Elsevier. This book was released on 2015-11-21 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: High-temperature Solid Oxide Fuel Cells, Second Edition, explores the growing interest in fuel cells as a sustainable source of energy. The text brings the topic of green energy front and center, illustrating the need for new books that provide comprehensive and practical information on specific types of fuel cells and their applications. This landmark volume on solid oxide fuel cells contains contributions from experts of international repute, and provides a single source of the latest knowledge on this topic. - A single source for all the latest information on solid oxide fuel cells and their applications - Illustrates the need for new, more comprehensive books and study on the topic - Explores the growing interest in fuel cells as viable, sustainable sources of energy
Download or read book The Materials Science of Thin Films written by Milton Ohring and published by Academic Press. This book was released on 1992 with total page 744 pages. Available in PDF, EPUB and Kindle. Book excerpt: Prepared as a textbook complete with problems after each chapter, specifically intended for classroom use in universities.
