Download or read book The Boron Arsenides written by David J. Fisher and published by Materials Research Forum LLC. This book was released on 2023-01-25 with total page 119 pages. Available in PDF, EPUB and Kindle. Book excerpt: Boron Arsenide offers very interesting electronic properties, as well as a high thermal conductivity; nearly 10 times higher than that of silicon. It has been hailed as ‘the best semiconductor material ever found’. The present book presents a detailed review of this material and its potential applications. The materials covered include Icosahedral Boron Arsenide, Hexagonal Boron Arsenide, Amorphous Boron Arsenide and Cubic Boron Arsenide. The book references 166 original resources with their direct web links for in-depth reading. Keywords: Boron Arsenides, Electron Mobility, Hole Mobility, Band-gap, Monolayers, Defects, Mechanical Properties, Photo-electrodes, Thermal Conductivity, Heat-spreading.
Download or read book Preparation and Properties of Boron Arsenide written by Adin Edwin Hyslop and published by . This book was released on 1970 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Pressure Synthesis of Boron Phosphide and Boron Arsenide written by Paul E. Grayson and published by . This book was released on 1966 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Preparation and Thermodynamic Properties of Boron Arsenide BAs and Hexa boron Arsenide B sub 6 A sub S written by Howard M. Goldman and published by . This book was released on 1971 with total page 105 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Pressure Synthesis of Boron Phosphide and Boron Arsenide written by Paul E. Grayson and published by . This book was released on 1966 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Electrical Properties of Amorphous Boron Arsenide Thin Films written by Gary J. Seiter and published by . This book was released on 1980 with total page 63 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Temperature Dependent Study of Phonons and the Thermal Conductivity of Boron Arsenide written by and published by . This book was released on 2008 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Boron Arsenide Thin Film Solar Cell Development written by Paul E. Grayson and published by . This book was released on 1980 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Epitaxial Growth of Icosahedral Boron Arsenide on Silicon Carbide Substrates written by Yi Zhang and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The exceptional radiation resistance, high melting point, and wide energy bandgap (3.2 eV) of icosahedral boron arsenide, B[subscript]12As[subscript]2, make it an attractive candidate for applications in radiation intense environments, for example, in radioisotope batteries. These devices have potential lifetimes of decades rather than days or weeks that are typical of conventional chemical power cells. Solid state neutron detectors are another potential application of this semiconductor, as the boron-10 isotope has a high thermal neutron capture cross-section, orders of magnitude higher than most elements. To produce high quality crystalline B[subscript]12As[subscript]2 for these applications, this research focused on the epitaxy and electrical properties of B[subscript]12As[subscript]2 thin films. The major findings include the following. Twin-free heteroepitaxial B[subscript]12As[subscript]2 layers were obtained on m-plane 15R-SiC and c-plane 4H-SiC inclined 4° and 7°off-axis in the [1-100] direction. These substrates exposed asymmetric step-terrace surface structures that force B[subscript]12As[subscript]2 layers to adopt a single orientation, thus, twins were eliminated. Consequently, the crystal quality was greatly improved over films on on-axis c-plane 6H-SiC, yielding a maximum hole mobility of 80 cm[superscript]2V[superscript]-1s[superscript]-1, nearly 100 times higher than previously reported values. B[subscript]12As[subscript]2 epilayers grown at 1300°C had the lowest defect densities, smallest residual strains, highest mobility and highest deposition rate. Excess AsH[subscript]3 concentration was advantageous to prevent the loss of arsenic from the epilayer. Undoped B[subscript]12As[subscript]2 exhibited a variable-range-hopping conduction, indicating it was a highly disordered system. All films were p-type with a room temperature hole concentration on the order of 10[superscript]12~10[superscript]15cm[superscript]-3. The thermal activation energy of acceptors varied from 0.15 eV to 0.33 eV. The Hall mobility was dominated by impurity scattering at low temperatures and by polar phonon scattering at high temperatures. H, C, O and Si were the major impurities present in the undoped B[subscript]12As[subscript]2 films with concentrations on the order of 10[superscript]18~10[superscript]19 cm[superscript]-3. Si doping and annealing decreased the resistivity by up to two orders of magnitude. The density of localized states was small in the undoped B[subscript]12As[subscript]2 as the intrinsic acceptor levels (IALs) were compensated by the boron interstitials. However, in Si-doped B[subscript]12As[subscript]2, Si may prevent the interstitial boron atoms from compensating the IALs, yielding a decreased density of localized states. The Hall mobility of B[subscript]12As[subscript]2 epilayer was significantly reduced with increasing silicon concentration.
Download or read book Chemistry Involving the Preparation Isolation and Immobilization of Nanocrystalline And or Microcrystalline Boron Arsenide Boron Phosphide Boron Antimonide written by and published by . This book was released on 1997 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: During this report period, publications 1 and 2 (see below) appeared in print (the contents of the papers were reported in two previous "Interim Technical Reports"). Michael Lube prepared the adduct Cl3B. Sb(Sb(SiMe3)3, the third Lewis acid-base adduct of boron and antimony to be structurally characterized. This adduct along with Br3 B. Sb(SiMe3)3 and I3B. Sb(SiMe3)3 are the subject of publication 3 (see below) with the manuscript being written by Michael. Based on the various data obtained, it appeared that the black powders obtained from the thermolysis of these adducts were a mixture of nanocrystalline Sb (hex) and amorphous BSb (data summarized in Michaels's?- PhD. dissertation, 9/6/96, Duke University). Further investigations, on halo-boron-arsenic systems by Michael, with some assistance from Richard Jouet, (see publication 4 below) resulted in the isolation and structural characterization of I3B. As(SiMe3)3, as well as the isolation of X-ray quality crystals of the Cl3B. As(SiMe3)3 I2BAs(SiMe3)22 (preparations previously reported in the 1996 "Interim Technical report").
Download or read book Rectifying Junctions and Doping Studies of Amorphous and Polycrystalline Boron Arsenide written by Patrick L. Cole and published by . This book was released on 1980 with total page 45 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Boron Rich Solids written by David Emin and published by AIP Conference Proceedings (Nu. This book was released on 1991 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Selected High Pressure Studies written by Raymond G. Greene and published by . This book was released on 1995 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Group 13 Metals Aluminium Gallium Indium and Thallium written by Simon Aldridge and published by John Wiley & Sons. This book was released on 2011-04-11 with total page 763 pages. Available in PDF, EPUB and Kindle. Book excerpt: The last two decades have seen a renaissance in interest in the chemistry of the main group elements. In particular research on the metals of group 13 (aluminium, gallium, indium and thallium) has led to the synthesis and isolation of some very novel and unusual molecules, with implications for organometallic synthesis, new materials development, and with biological, medical and, environmental relevance. The Group 13 Metals Aluminium, Gallium, Indium and Thallium aims to cover new facts, developments and applications in the context of more general patterns of physical and chemical behaviour. Particular attention is paid to the main growth areas, including the chemistry of lower formal oxidation states, cluster chemistry, the investigation of solid oxides and hydroxides, advances in the formation of III-V and related compounds, the biological significance of Group 13 metal complexes, and the growing importance of the metals and their compounds in the mediation of organic reactions. Chapters cover: general features of the group 13 elements group 13 metals in the +3 oxidation state: simple inorganic compounds formal oxidation state +3: organometallic chemistry formal oxidation state +2: metal-metal bonded vs. mononuclear derivatives group 13 metals in the +1 oxidation state mixed or intermediate valence group 13 metal compounds aluminium and gallium clusters: metalloid clusters and their relation to the bulk phases, to naked clusters, and to nanoscaled materials simple and mixed metal oxides and hydroxides: solids with extended structures of different dimensionalities and porosities coordination and solution chemistry of the metals: biological, medical and, environmental relevance III-V and related semiconductor materials group 13 metal-mediated organic reactions The Group 13 Metals Aluminium, Gallium, Indium and Thallium provides a detailed, wide-ranging, and up-to-date review of the chemistry of this important group of metals. It will find a place on the bookshelves of practitioners, researchers and students working in inorganic, organometallic, and materials chemistry.
Download or read book Vaporization of Boron Phosphide and Aluminum Arsenide written by Kamalakar S. Hinge and published by . This book was released on 1960 with total page 56 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Luminescence Thermometry written by Miroslav Dramićanin and published by Woodhead Publishing. This book was released on 2018-04-21 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Luminescence Thermometry: Methods, Materials, and Applications presents the state-of-the art applications of luminescence thermometry, giving a detailed explanation of luminescence spectroscopic schemes for the read-out of temperature, while also describing the diverse materials that are capable of sensing temperature via luminescence. Chapters cover the fundamentals of temperature, traditional thermometers and their figures of merit, a concise description of optical thermometry methods, luminescence and instrumentation, and an explanation of the ways in which increases in temperature quench luminescence. Additional sections focus on materials utilized for luminescence thermometry and the broad range of applications for luminescence thermometry, including temperature measurement at the nanoscale and the application of multifunctional luminescent materials. Provides an overview of luminescence thermometry applications, including high-temperature, biomedical, nanoscale and multifunctional Delves into luminescence thermometry by materials group, including Rare-earth and transition Metal Ion Doped, Semiconductors, Quantum Dots and Organic materials Gives a concise introduction of the latest methods of temperature measurement, including luminescence spectroscopic schemes and methods of analysis
Download or read book Current Review of the Soviet Technical Press written by and published by . This book was released on 1964-07 with total page 1130 pages. Available in PDF, EPUB and Kindle. Book excerpt:
