Download or read book The Application of Neutrosophic Hypersoft Set TOPSIS NHSS TOPSIS in the Selection of Carbon Nano Tube based Field Effective Transistors CNTFETs written by Muhammad Umer Farooq and published by Infinite Study. This book was released on 2021-06-01 with total page 13 pages. Available in PDF, EPUB and Kindle. Book excerpt: Carbon nano tubes (CNT) are the main parts of the electronic devices. Due to high carrier mobility, these devices have very high speed. CNT has a wide range of application in making sensors which can detect different types of diseases, materials, viruses and bacteria.
Download or read book Neutrosophic Sets and Systems Vol 43 2021 written by Florentin Smarandache and published by Infinite Study. This book was released on with total page 311 pages. Available in PDF, EPUB and Kindle. Book excerpt: “Neutrosophic Sets and Systems” has been created for publications on advanced studies in neutrosophy, neutrosophic set, neutrosophic logic, neutrosophic probability, neutrosophic statistics that started in 1995 and their applications in any field, such as the neutrosophic structures developed in algebra, geometry, topology, etc. In this issue: On Neutrosophic Crisp Sets and Neutrosophic Crisp Mathematical Morphology, New Results on Pythagorean Neutrosophic Open Sets in Pythagorean Neutrosophic Topological Spaces, Comparative Mathematical Model for Predicting of Financial Loans Default using Altman Z-Score and Neutrosophic AHP Methods.
Download or read book Neutrosophic Sets and Systems Vol 47 2021 written by Florentin Smarandache and published by Infinite Study. This book was released on 2021-12-30 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt: Papers on neutrosophic statistics, neutrosophic probability, plithogenic set, paradoxism, neutrosophic set, NeutroAlgebra, etc. and their applications.
Download or read book Physics of Carbon Nanotube Devices written by Francois Leonard and published by William Andrew. This book was released on 2008-11-18 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: Possibly the most impactful material in the nanotechnology arena, carbon nanotubes have spurred a tremendous amount of scientific research and development. Their superior mechanical and chemical robustness makes them easily manipulable and allows for the assembly of various types of devices, including electronic, electromechanical, opto-electronic and sensing devices. In the field of nanotube devices, however, concepts that describe the properties of conventional devices do not apply. Carbon nanotube devices behave much differently from those using traditional materials, and offer entirely new functionality. This book – designed for researchers, engineers and graduate students alike – bridges the experimental and theoretical aspects of carbon nanotube devices. It emphasizes and explains the underlying physics that govern their working principles, including applications in electronics, nanoelectromechanical systems, field emission, optoelectronics and sensing. Other topics include: electrical contacts, p-n junctions, transistors, ballistic transport, field emission, oscillators, rotational actuators, electron-phonon scattering, photoconductivity, and light emission. Many of the aspects discussed here differ significantly from those learned in books or traditional materials, and are essential for the future development of carbon nanotube technology. • Bridges experimental and theoretical aspects of carbon nanotube devices, focusing on the underlying physics that govern their working principles • Explains applications in electronics, nanoelectromechanical systems, field emission, optoelectronics and sensing. • Other topics include: electrical contacts, p-n junctions, transistors, ballistic transport, field emission, oscillators, rotational actuators, electron-phonon scattering, photoconductivity, and light emission. • Covers aspects that significantly differ from those learned in traditional materials, yet are essential for future advancement of carbon nanotube technology. * Bridges experimental and theoretical aspects of carbon nanotube devices, focusing on the underlying physics that govern their working principles * Explains applications in electronics, nanoelectromechanical systems, field emission, optoelectronics and sensing. * Other topics include: electrical contacts, p-n junctions, transistors, ballistic transport, field emission, oscillators, rotational actuators, electron-phonon scattering, photoconductivity, and light emission * Covers aspects that significantly differ from those learned in traditional materials, yet are essential for future advancement of carbon nanotube technology.
Download or read book Physics of Semiconductor Devices written by J.-P. Colinge and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: Physics of Semiconductor Devices covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors. Concepts are introduced to the reader in a simple way, often using comparisons to everyday-life experiences such as simple fluid mechanics. They are then explained in depth and mathematical developments are fully described. Physics of Semiconductor Devices contains a list of problems that can be used as homework assignments or can be solved in class to exemplify the theory. Many of these problems make use of Matlab and are aimed at illustrating theoretical concepts in a graphical manner.
Download or read book Aggregate Operators of Neutrosophic Hypersoft Set written by Muhammad Saqlain and published by Infinite Study. This book was released on 2020-07-01 with total page 13 pages. Available in PDF, EPUB and Kindle. Book excerpt: Multi-criteria decision making (MCDM) is concerned about organizing and taking care of choice and planning issues including multi-criteria. When attributes are more than one, and further bifurcated, neutrosophic softset environment cannot be used to tackle such type of issues.
Download or read book Fundamentals of Nanotransistors written by Mark Lundstrom and published by World Scientific Publishing Company Incorporated. This book was released on 2018 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, "bottom-up approach" that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.
Download or read book High k Gate Dielectric Materials written by Niladri Pratap Maity and published by CRC Press. This book was released on 2020-12-18 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.
Download or read book Electronic Devices and Circuit Theory written by Robert L. Boylestad and published by . This book was released on 2001 with total page 950 pages. Available in PDF, EPUB and Kindle. Book excerpt:
