Download or read book Terahertz Integrated Circuits in Silicon Technologies written by Richard al- Hadi and published by . This book was released on 2013 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Millimeter Wave Integrated Circuits written by Mladen Božanić and published by Springer Nature. This book was released on 2020-03-16 with total page 259 pages. Available in PDF, EPUB and Kindle. Book excerpt: This peer-reviewed book explores the methodologies that are used for effective research, design and innovation in the vast field of millimeter-wave circuits, and describes how these have to be modified to fit the uniqueness of high-frequency nanoelectronics design. Each chapter focuses on a specific research challenge related to either small form factors or higher operating frequencies. The book first examines nanodevice scaling and the emerging electronic design automation tools that can be used in millimeter-wave research, as well as the singular challenges of combining deep-submicron and millimeter-wave design. It also demonstrates the importance of considering, in the millimeter-wave context, system-level design leading to differing packaging options. Further, it presents integrated circuit design methodologies for all major transceiver blocks typically employed at millimeter-wave frequencies, as these methodologies are normally fundamentally different from the traditional design methodologies used in analogue and lower-frequency electronics. Lastly, the book discusses the methodologies of millimeter-wave research and design for extreme or harsh environments, rebooting electronics, the additional opportunities for terahertz research, and the main differences between the approaches taken in millimeter-wave research and terahertz research.
Download or read book High Speed Devices and Circuits with THz Applications written by Jung Han Choi and published by CRC Press. This book was released on 2017-09-19 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presenting the cutting-edge results of new device developments and circuit implementations, High-Speed Devices and Circuits with THz Applications covers the recent advancements of nano devices for terahertz (THz) applications and the latest high-speed data rate connectivity technologies from system design to integrated circuit (IC) design, providing relevant standard activities and technical specifications. Featuring the contributions of leading experts from industry and academia, this pivotal work: Discusses THz sensing and imaging devices based on nano devices and materials Describes silicon on insulator (SOI) multigate nanowire field-effect transistors (FETs) Explains the theory underpinning nanoscale nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs), simulation methods, and their results Explores the physics of the silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), as well as commercially available SiGe HBT devices and their applications Details aspects of THz IC design using standard silicon (Si) complementary metal-oxide-semiconductor (CMOS) devices, including experimental setups for measurements, detection methods, and more An essential text for the future of high-frequency engineering, High-Speed Devices and Circuits with THz Applications offers valuable insight into emerging technologies and product possibilities that are attractive in terms of mass production and compatibility with current manufacturing facilities.
Download or read book Si Waveguide Technology for High Performance Millimeter wave terahertz Integrated Systems written by Nazy Ranjkesh and published by . This book was released on 2015 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: The terahertz (THZ) spectrum (0.3 - 3 THz) offers new opportunities to a wide range of emerging applications which demand high-quality THz sources, detectors, amplifiers, and integrated circuits. On-chip integration of planar transmission line passive components degrades their performance due to the conduction loss. Therefore, a hybrid integrated technology in which all of the high-quality passive components are implemented using a suitable off-chip planar integrated technology and the active devices are placed on-chip, has become the most promising approach. In this thesis, a low-cost and low-loss silicon-on-glass (SOG) integrated circuit technology is proposed for THz/millimeter-wave (mmW) applications. Highly-resistive intrinsic silicon (Si) is selected as the main guiding region due to its high transparency at mmW/THz frequency ranges and the maturity of Si-devices fabrication. In the proposed technology, all of the passive components and waveguide connections are made of highly-resistive Si on a glass substrate. The proposed technique leads to a high-precision and low-cost fabrication process, wherein the alignment between the sub-structures is automatically achieved during the fabrication process. This is performed by photolithography and dry etching of the entire integrated passive circuit layout through the Si layer of the SOG wafer. The SOG dielectric ridge waveguide, as the basic component of the SOG integrated circuit, is theoretically and experimentally investigated. A test setup is designed to measure propagation characteristics of the proposed SOG waveguide. Measured dispersion diagrams of the SOG dielectric waveguides show average attenuation constants of 0.63 dB/cm, 0.28 dB/cm, and 0.53 dB/cm over the frequency ranges of 55 - 65 GHz, 90 - 110 GHz, and 140 - 170 GHz, respectively. Extending the SOG platform toward the THz range is achieved by new SOG waveguide structures wherein the glass substrates below the Si channels are etched to reduce the effect of greater glass material loss at higher frequencies (i.e., > 200 GHz). To fabricate these structures, the glass substrate is etched in hydrophilic acid before bonding to the Si. Four new SOG configurations, called the suspended SOG, corrugated SOG, rib SOG, and U-SOG waveguides are proposed with their respective fabrication techniques for the THz range of frequencies. In the suspended SOG waveguide, a periodic configuration of Si beams supports the Si guiding channel over the etched grove on the glass substrate. Measurements of two suspended SOG waveguides show low attenuation constants of 0.031 dB/[lambda]0 and 0.042 dB/[lambda]0 (on average) over the frequency ranges of 350 - 500 GHz and 400 - 500 GHz, respectively. It is theoretically demonstrated that the rib SOG and U-SOG waveguides are promising candidates for THz high-density and low-loss integrated circuits. Rib SOG waveguide and U-SOG waveguide test devices are designed over the frequency bands of 0.8 - 0.9 THz and 0.9 - 1.1 THz. The proposed SOG waveguide technology can easily be extended to several THz with no limitations. A new mmW low-loss dielectric phase shifter integrated in the corrugated SOG platform is designed, fabricated, and measured. Phase shifts of 111 ° and 129 ° at frequencies of 85 GHz and 100 GHz, with maximum insertion losses of 0.65 dB and 2.5 dB, are achieved during measurements of the proposed phase shifter. Millimeter-wave integrated SOG tapered antennas are developed and implemented. The idea of a suspended SOG tapered antenna is demonstrated to enhance the radiation efficiency and the gain of the SOG tapered antenna over 110 - 130 GHz. The suspended SOG tapered antenna, which can function under two orthogonal mode excitations, shows measured efficiencies of higher than 90 % for the two vertical polarizations.
Download or read book Standing Wave Integrated Circuits for Power Generation Radiation and Beam Steering at Millimeter Wave and Terahertz Spectrum written by Hossein Jalili and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The enormous potentials of millimeter wave (mm-wave) and terahertz (THz) frequency spectrum have sparked significant interest in breaking into this new frontier of technology. High-speed communication, imaging, spectroscopy and radar are just a few examples among many possible applications. Today, however, mm-wave and THz systems are mostly discrete, bulky and expensive, which significantly limits their accessibility and applications. Realization of integrated mm-wave/THz systems in low-cost and reliable silicon technologies can be a technological milestone, paving the way for tremendous opportunities both in high-tech market and academic research. This work is focused on tackling the major challenges of implementing mm-wave/THz integrated sources, including magnitude, bandwidth, radiation and beam steering of the source power. As we move to higher frequencies, the power that can be generated on chip continuously drops. Here, we have demonstrated a versatile method to maximize this power based on independent optimization of harmonic impedances. Scalable standing wave array structures are implemented based on efficient low-loss coupling schemes in order to further boost the produced power by increasing the number of contributing individual sources. Furthermore, we have presented a practical approach to maximizing radiation gain and consequently Equivalent Isotropic Radiated Power (EIRP) of the source by optimizing influential parameters of the radiation apparatus. Achieving wideband operation also becomes more challenging with increasing frequency. This is an important obstacle in our ability to take advantage of the uncongested and large available bandwidth at mm-wave/THz. We implemented standing wave oscillators and employed a varactor-less frequency tuning method to realize wideband operation. We considerably improved the bandwidth benchmark among state-of-the-art integrated radiator arrays in silicon technology. Furthermore, electronic beam steering is a crucial component of the modern wireless systems. However, realizing the necessary wide range of variable phase shift between sources is a difficult task at mm-wave/THz spectrum. Here, we have demonstrated a new phase shifting method based on combining standing and traveling waves and were able to achieve a record beam steering range among relevant published works to date. In this dissertation, we present the ideas, analysis, design methods and experimental results of four implemented prototype integrated circuits. First, a 230-GHz Voltage Controlled Oscillator (VCO) in a 65-nm CMOS technology is presented based on a coupled standing wave structure. This circuit is capable of providing high output power (3.4 dBm maximum) and wideband operation (8.3% frequency tuning range) simultaneously. Taking output power, bandwidth, power consumption and phase noise into account altogether, the circuit has a record performance figure-of-merit (FOM) compared to the state of the art. Then, a 0.34-THz 4-element scalable standing wave radiator array with 20.3 GHz (record bandwidth at the time of publication) and -10.5 dBm maximum radiated power is demonstrated, followed by a 0.34-THz wideband (15.1% frequency tuning range) and wide-angle (128° /53° range) 2D beam steering phased array, both in in 0.13μm SiGe BiCMOS. The phased array circuit has the largest bandwidth and widest steering range among integrated arrays above 300 GHz in silicon technology. Finally, a 0.46-THz 25-element scalable radiator array in a 65-nm CMOS is presented with high radiation gain through an optimized silicon lens set up. This coherent source delivers record EIRP of +19.3 dBm and 8.9% wide frequency tuning range, both largest values reported for integrated arrays above 400 GHz in silicon.
Download or read book Terahertz Antenna Technology for Imaging and Sensing Applications written by Isha Malhotra and published by Springer Nature. This book was released on 2021-05-11 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers terahertz antenna technology for imaging and sensing, along with its various applications. The authors discuss the use of terahertz frequency and photoconductive antenna technology for imaging applications, such as biological and bio-medical applications, non-destructive inspection of fabrics and plastics, analysis of hydration levels or detecting the presence of metallic components in samples, and detecting a variety of materials with unique spectral fingerprints in the terahertz frequency range, such as different types of explosives or several compounds used in the fabrication of medicines. Provides a comprehensive review of terahertz source and detector for imaging and sensing; Discusses photoconductive antenna technology for imaging and sensing; Presents modalities for improving the photoconductive dipole antenna performance for imaging and sensing; Explores applications in tomographic imaging, art conservation and the pharmaceutical and aerospace industries.
Download or read book Semiconductor TeraHertz Technology written by Guillermo Carpintero and published by John Wiley & Sons. This book was released on 2015-07-14 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: Key advances in Semiconductor Terahertz (THz) Technology now promises important new applications enabling scientists and engineers to overcome the challenges of accessing the so-called "terahertz gap". This pioneering reference explains the fundamental methods and surveys innovative techniques in the generation, detection and processing of THz waves with solid-state devices, as well as illustrating their potential applications in security and telecommunications, among other fields. With contributions from leading experts, Semiconductor Terahertz Technology: Devices and Systems at Room Temperature Operation comprehensively and systematically covers semiconductor-based room temperature operating sources such as photomixers, THz antennas, radiation concepts and THz propagation as well as room-temperature operating THz detectors. The second part of the book focuses on applications such as the latest photonic and electronic THz systems as well as emerging THz technologies including: whispering gallery resonators, liquid crystals, metamaterials and graphene-based devices. This book will provide support for practicing researchers and professionals and will be an indispensable reference to graduate students in the field of THz technology. Key features: Includes crucial theoretical background sections to photomixers, photoconductive switches and electronic THz generation & detection. Provides an extensive overview of semiconductor-based THz sources and applications. Discusses vital technologies for affordable THz applications. Supports teaching and studying increasingly popular courses on semiconductor THz technology.
Download or read book Design of CMOS Millimeter Wave and Terahertz Integrated Circuits with Metamaterials written by Hao Yu and published by CRC Press. This book was released on 2015-10-19 with total page 389 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book shows that with the use of metamaterials, one can have coherent THz signal generation, amplification, transmission, and detection for phase-arrayed CMOS transistors with significantly improved performance. Offering detailed coverage from device to system, the book describes the design and application of metamaterials in actual CMOS integrated circuits, includes real circuit examples and chip demonstrations with measurement results, and also evaluates system performance after CMOS-based system-on-chip integration. The book reflects the latest research progress and provides a state-of-the-art reference on CMOS-based metamaterial devices and mm-wave and THz systems.
Download or read book Terahertz Sources Detectors and Transceivers in Silicon Technologies written by Zhuang Li and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: With active devices lingering on the brink of activity and every passive device and interconnection on chip acting as potential radiator, a paradigm shift from ,Äútop-down,Äù to ,Äúbottom-up,Äù approach in silicon terahertz (THz) circuit design is clearly evident as we witness orders-of-magnitude improvements of silicon THz circuits in terms of output power, phase noise, and sensitivity since their inception around 2010. That is, the once clear boundary between devices, circuits, and function blocks is getting blurrier as we push the devices toward their limits. And when all else fails to meet the system requirements, which is often the case, a logical step forward is to scale these THz circuits to arrays. This makes a lot of sense in the terahertz region considering the relatively efficient on-chip THz antennas and the reduced size of arrays with half-wavelength pitch. This chapter begins with the derivation of conditions for maximizing power gain of active devices. Discussions of circuit topologies for THz sources, detectors, and transceivers with emphasis on their efficacy and scalability ensue, and this chapter concludes with a brief survey of interface options for channeling THz energy out of the chip.
Download or read book Integrated Terahertz Transceivers in Silicon for Point to Point Wireless Communication written by Mostafa Hosseini and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in silicon technologies and emerging on-chip antennas have provided a reliable solution for designing low-cost, high-speed integrated circuits. The birth of 5G systems and the definition of the 6G standard are evidence of the increasing interest in the exploration of terahertz frequencies for ultra-broadband wireless communication systems. Terahertz frequencies promise unlicensed wide-spectrum bandwidth for the next generation of wireless communication links. Traditionally, terahertz systems have been realized optically by exploiting a photoconductive antenna with a femtosecond laser source. However, laser-based terahertz systems suffer from high cost, bulky measurement setups, and high power consumption, making them impractical for certain applications in communication, sensing, and imaging. In contrast, the transistor speed in silicon-based technologies has been improving over the last several decades, making electronic terahertz systems a low-cost and efficient alternative for optical systems. However, one of the main challenges in realizing efficient integrated terahertz systems in silicon is the generation and detection of signals beyond the maximum oscillation frequency (fmax) of a transistor, which does not exceed hundreds of gigahertz. Considering all the progress made in electronic terahertz systems, researchers have remained pessimistic regarding the feasibility of terahertz propagation over relatively long distances due to high atmospheric absorption loss. This issue is even more critical for silicon-based terahertz radiators, where the amount of radiated power is 10s of dB below that of optical terahertz systems. Therefore, most studies in the terahertz domain have been limited to short-distance setups in a lab environment. In this dissertation, a fully integrated laser-free terahertz impulse transceiver in silicon is presented that can radiate and detect arbitrary signals in millimeter-wave and terahertz bands with a 2 Hz frequency resolution. In the transmit mode, this chip radiates broadband impulses with 2.5-picosecond full width at half maximum, corresponding to a frequency comb with 1.052 terahertz bandwidth. In the receive mode, this design acts as a coherent detector that detects arbitrary signals up to 500 GHz with a peak sensitivity of -100 dBm with a 1 KHz resolution bandwidth. This receiver is utilized in conjunction with an impulse radiator to implement a dual-frequency comb spectroscopy system. A chip-to-chip dual-frequency comb is successfully measured and characterized in the 20--220 GHz frequency range. Additionally, this design can transmit picosecond impulses at 4 Gb/s data rate. Moreover, long-path terahertz communication channel characterization is introduced in the frequency range of 0.32-1.1~THz, where a specular link is created using a terahertz radiator, parabolic reflector antennas, a plane mirror, and a downconverter mixer. The terahertz channel is characterized up to a distance of 110~m. The measurement results demonstrate channel path loss, atmospheric absorption, and low-loss frequency windows suitable for long-range point-to-point wireless communication links in the terahertz regime.
Download or read book Silicon based Terahertz Circuits and Systems written by Kaushik Sengupta and published by . This book was released on 2012 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor TeraHertz Technology written by Guillermo Carpintero and published by John Wiley & Sons. This book was released on 2015-07-14 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: Key advances in Semiconductor Terahertz (THz) Technology now promises important new applications enabling scientists and engineers to overcome the challenges of accessing the so-called "terahertz gap". This pioneering reference explains the fundamental methods and surveys innovative techniques in the generation, detection and processing of THz waves with solid-state devices, as well as illustrating their potential applications in security and telecommunications, among other fields. With contributions from leading experts, Semiconductor Terahertz Technology: Devices and Systems at Room Temperature Operation comprehensively and systematically covers semiconductor-based room temperature operating sources such as photomixers, THz antennas, radiation concepts and THz propagation as well as room-temperature operating THz detectors. The second part of the book focuses on applications such as the latest photonic and electronic THz systems as well as emerging THz technologies including: whispering gallery resonators, liquid crystals, metamaterials and graphene-based devices. This book will provide support for practicing researchers and professionals and will be an indispensable reference to graduate students in the field of THz technology. Key features: Includes crucial theoretical background sections to photomixers, photoconductive switches and electronic THz generation & detection. Provides an extensive overview of semiconductor-based THz sources and applications. Discusses vital technologies for affordable THz applications. Supports teaching and studying increasingly popular courses on semiconductor THz technology.
Download or read book Advanced Materials for Future Terahertz Devices Circuits and Systems written by Aritra Acharyya and published by Springer Nature. This book was released on 2021-02-12 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book highlights the properties of advanced materials suitable for realizing THz devices, circuits and systems, and processing and fabrication technologies associated with those. It also discusses some measurement techniques exclusively effective for THz regime, newly explored materials and recently developed solid-state devices for efficient generation and detection of THz waves, potentiality of metamaterials for implementing THz passive circuits and bio-sensors, and finally the future of silicon as the base material of THz devices. The book especially focuses on the recent advancements and several research issues related to THz materials and devices; it also discusses theoretical, experimental, established, and validated empirical works on these topics.
Download or read book Signal Generation for Millimeter Wave and THZ Applications in InP DHBT and InP on BiCMOS Technologies written by Muhammad Maruf Hossain and published by Cuvillier Verlag. This book was released on 2016-10-27 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: A variety of commercial and defense applications are expected to have sub-terahertz (THz) and mm-wave integrated circuits in the near future. Silicon (Si) technologies partly meet the demands but are limited in their power handling capability. III-V technologies, in particular InP, offer higher output power but fall short of their Si counterparts if it comes to integration density and complexity. Thus, research on hetero-integration of Si with InP has gained increasing interest. This work focuses on MMIC signal sources as important building blocks that are based on FBH’s 0.8 μm InP-DHBT transferred-substrate (TS) process, offering an InP-DHBT as well as an InP-on-BiCMOS version. This process is unique and provides interesting possibilities to realize integrated circuits in the frequency range between 100 GHz and more than 300 GHz. First, fundamental sources at 96 GHz and 197 GHz are presented. They deliver +9 dBm and 0 dBm output power with 25% and 0.5% overall DC-to-RF efficiency, respectively. Furthermore, 162 GHz and 270 GHz push-push sources are demonstrated utilizing an InP-on-BiCMOS process, which achieve -4.5 dBm and -9.5 dBm output power. Subsequently, multiplier-based signal sources are demonstrated including a full G-band (140-220 GHz) frequency doubler, which delivers +8.2 dBm at 180 GHz and more than +5 dBm in the range 160-200 GHz. The doubler circuit exhibits a power efficiency of 16% in this frequency range. Also, the highest frequency is reached by a wideband 328 GHz quadrupler, with -7 dBm output power at 325 GHz and 0.5% DC-to-RF efficiency. The final part is devoted to hetero-integrated circuits and the necessary design considerations. Two 250 GHz and 330 GHz sources are demonstrated that deliver -1.6 dBm and -12 dBm output power, respectively. These are the first hetero-integrated signal sources in this frequency range reported so far.
Download or read book Interconnection Development for InP HBT Terahertz Circuits written by Dimitri Stoppel and published by . This book was released on 2020-05-11 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: For frequencies above 300 GHz applications are still in the research state since commercially available systems are missing. This dissertation shows three key aspects in process development that are now part of a standard indium phosphide (InP) transferred-substrate process, paving the way for future terahertz projects and applications. The InP transferred-substrate process at Ferdinand-Braun-Institut (FBH) has proven to be a promising candidate for the respective semiconductor components. This particular process utilizes the wafer bonding technique, which allows transferring the active monolithic microwave integrated circuits (MMICs) onto a host substrate. Such host substrate can be either a passive substrate that is equipped with through-silicon vias (TSVs) or a BiCMOS wafer. Hetero-integrated approaches offer ideal conditions to fulfill the requirements of applications regarding complexity (BiCMOS) and large bandwidth (InP). Within this thesis, three topics are described in greater detail: benzocyclobutene (BCB) dry etch process development, nickel-chrome (NiCr) thin film resistor (TFRs) development and through-silicon vias implementation. Eventually, the newly developed plasma etch process has been successfully implemented into standard InP processing, with a fivefold increase in etch rate at maintained bias and anisotropy. Also, a method to suppress redeposition formation was shown. Successful circuit measurements with implemented NiCr resistors demonstrated the last step of TFR integration. A new approach with bottom contacted TFRs was successfully integrated. A laser-enabled TSV process was developed to serve as an effective and reliable way to circumvent parasitic parallel plate modes that occur at high operating frequency circuits.
Download or read book Terahertz Technology written by Borwen You and published by BoD – Books on Demand. This book was released on 2022-08-17 with total page 219 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromagnetic waves within a terahertz frequency range are becoming critical to investigating molecules, materials, and possible applications that are operated by both visible light and infrared rays. This book discusses sensing, imaging, and optoelectronic technologies of terahertz electromagnetic waves in theory and experiments. Most terahertz technologies can be explained by fundamentals of applied physics that have been demonstrated in other spectral ranges. However, the optoelectronic technology and corresponding configurations of imaging and sensing techniques are so special for various terahertz material polarization waves, which are excited in solid-state media by high-peak power lasers and waveguide transportation. Thus, this book also specifies terahertz parameters and available technologies.
Download or read book Millimeter wave and Terahertz Frequency Synthesis on Advanced Silicon Technology written by Raphael Guillaume and published by . This book was released on 2018 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, millimeter-wave (mm-wave) and terahertz (THz) frequency bands haverevealed a great potential for many applications such as medical and biological imaging,quality control, and very-high-speed communications. The main reasons for this interestare the many interesting properties of THz and millimeter waves, such as their ability toharmlessly penetrate through matter or the broad spectrum available at these frequencies.Targeted applications require energy efficient signal sources with high power outputand, for some applications, low phase noise. In addition, the increasing demand in mmwave/THz applications requires the use of a cost-optimized, high-performance, and verylarge scale integration (VLSI) technologies, such as the 28nm CMOS FD-SOI technology.In this context, this thesis proposes an innovative solution for mm-wave and THz frequencygeneration in CMOS technology: the injection locked distributed oscillator (ILDO). Thework presented in this manuscript includes the detailed analysis of the state-of-the-artand its limitations, the detailed theoretical study of the proposed millimeter-waves bandsolution, the development of a specific design methodology in CMOS technology as well asthe design of technological demonstrators. The several 28nm FDSOI integrated distributedoscillators at 134 GHz and respectively 200 GHz have demonstrated the feasibility ofmm-wave and THz signal sources with high-energy efficiency, high output power, and lowphase noise in a VLSI CMOS technology. Finally, the injection locking capability of suchdistributed oscillators has been demonstrated experimentally paving the way for a futuresilicon-based fully integrated THz systems. The proposed circuits are as of today thehighest oscillation frequency solutions demonstrated in a 28nm CMOS Silicon technology.
