Download or read book TEOS based SiO2 Chemical Vapor Deposition Reaction Kinetics and Related Surface Chemistry written by and published by . This book was released on 1995 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fundamental Gas phase and Surface Chemistry of Vapor phase Deposition II and Process Control Diagnostics and Modeling in Semiconductor Manufacturing IV written by Electrochemical Society. High Temperature Materials Division and published by The Electrochemical Society. This book was released on 2001 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Principles of Chemical Vapor Deposition written by D.M. Dobkin and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 277 pages. Available in PDF, EPUB and Kindle. Book excerpt: Principles of Chemical Vapor Deposition provides a simple introduction to heat and mass transfer, surface and gas phase chemistry, and plasma discharge characteristics. In addition, the book includes discussions of practical films and reactors to help in the development of better processes and equipment. This book will assist workers new to chemical vapor deposition (CVD) to understand CVD reactors and processes and to comprehend and exploit the literature in the field. The book reviews several disparate fields with which many researchers may have only a passing acquaintance, such as heat and mass transfer, discharge physics, and surface chemistry, focusing on key issues relevant to CVD. The book also examines examples of realistic industrial reactors and processes with simplified analysis to demonstrate how to apply the principles to practical situations. The book does not attempt to exhaustively survey the literature or to intimidate the reader with irrelevant mathematical apparatus. This book is as simple as possible while still retaining the essential physics and chemistry. The book is generously illustrated to assist the reader in forming the mental images which are the basis of understanding.
Download or read book TEOS Surface Chemistry on SiO2 at CVD Temperatures and Pressures written by and published by . This book was released on 1995 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have developed a significantly improved understanding of thermal TEOS (tetraethylorthosilicate, Si(OCH2CH3)4) surface chemistry at CVD (chemical vapor deposition) temperatures and pressures. This was accomplished using GCMS (gas chromatography-mass spectroscopy) and FTIR (Fourier transform infrared spectroscopy) to examine how TEOS reaction rates are influenced by factors critical to the heterogeneous reaction. This included determining the TEOS pressure dependence, testing if reaction by-products inhibit TEOS decomposition, evaluating functional groups on the SiO2 surface as potential reaction sites, and establishing the functional group coverage dependencies. Our results show that TEOS decomposition rates are first-order in TEOS pressure and independent of the surface reaction by-products and the relative coverages of siloxane bridges (Si-O-Si) and hydroxyls on SiO2. These conclusions suggest that a precise knowledge of functional group coverages on SiO2 is not essential for modeling thermal TEOS decomposition rates at 1000K. In the absence of gas-phase reactions, growth rates should be directly proportional to TEOS pressure. Therefore, it is likely that non-uniform SiO2 depositions observed in thermal TEOS CVD are due to depletion of TEOS in the gas-phase and/or thermal gradients on the surface.
Download or read book Proceedings of the Thirteenth International Conference on Chemical Vapor Deposition written by Theodore M. Besmann and published by The Electrochemical Society. This book was released on 1996 with total page 922 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book CVD XII written by Klavs F. Jensen and published by . This book was released on 1993 with total page 460 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book TEOS Reaction Rates on SiO2 at 1000K written by and published by . This book was released on 1995 with total page 19 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have determined key kinetic parameters for the reaction of TEOS (tetraethylorthosilicate) on SiO2. This was accomplished under conditions (20 to 500 mTorr at 1000 K) that pertain directly to TEOS-based CVD (chemical vapor deposition) processes. TEOS reactions were carried out using deuterated silanols (SiOD) on the initial SiO2 surface. This allowed FTIR (Fourier transform infrared spectroscopy) measurements to distinguish the consumption of SiOD by TEOS from the concurrent formation of SiOH which results from TEOS decomposition at 1000 K. While SiOD consumption did exhibit a first-order dependence on SiOD coverage, SiOH formation exhibited a zero-order dependence on the total coverage of hydroxyl groups. This suggests that reactions with hydroxyl groups alone can not account for all of the TEOS decomposition reactions at 1000 K. Since the low coverage of two-membered siloxane ((Si-O)2) rings was consumed during the initial TEOS exposure, siloxane (Si-O-Si) bridges in three-membered siloxane ((Si-O)3) rings may be the additional species responsible for the constant rate of TEOS decomposition. However, it is not conclusive that this type of site-specific mechanism controls the chemistry. The data may also be explained with a site-independent mechanism in which intramolecular decomposition of TEOS on the surface provides a common rate-determining step for subsequent consumption of hydroxyls and siloxane bridges on SiO2. Regardless of the specific mechanism, our results predict that deposition rates will be insensitive to the relative coverages of siloxane bridges and hydroxyls on SiO2. Therefore, a precise knowledge of the coverages of these species on SiO2 is not essential for modeling thermal TEOS decomposition rates.
Download or read book Chemical Physics of Thin Film Deposition Processes for Micro and Nano Technologies written by Y. Pauleau and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date collection of tutorial papers on the latest advances in the deposition and growth of thin films for micro and nano technologies. The emphasis is on fundamental aspects, principles and applications of deposition techniques used for the fabrication of micro and nano devices. The deposition of thin films is described, emphasising the gas phase and surface chemistry and its effects on the growth rates and properties of films. Gas-phase phenomena, surface chemistry, growth mechanisms and the modelling of deposition processes are thoroughly described and discussed to provide a clear understanding of the growth of thin films and microstructures via thermally activated, laser induced, photon assisted, ion beam assisted, and plasma enhanced vapour deposition processes. A handbook for engineers and scientists and an introduction for students of microelectronics.
Download or read book Chemistry Within the Thermally Activated Boundary Layer During APCVD of SiO2 from TEOS and Ozone Using In situ Infrared Spectroscopy written by Lucio David Flores and published by . This book was released on 2004 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Surface Chemistry of Boron doped SiO2 CVD written by and published by . This book was released on 1993 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: Insight into how dopants can enhance deposition rates has been obtained by comparing reactivities of tetraethyl orthosilicate (TEOS, Si(OCH2CH3)4) with silanol and boranol groups on SiO2. This comparison is relevant for boron-doped SiO2 film growth from TEOS and trimethyl borate (TMB, B(OCH3)3) sources since boranols and silanols are expected to be present on surface during the (CVD). A silica substrate having coadsorbed deuterated silanols (SIOD) and boranols (BOD) was reacted with TEOS in a cold-wall reactor in the mTorr pressure regime at 1000K. Reactions were followed with Fourier transform infrared spectroscopy. Use of deuterated hydroxyls allowed consumption of hydroxyls by TEOS chemisorption to be distinguished from concurrent formation of SIOH and BOH that results from TEOS decomposition. It was found that TEOS reacts with BOD at twice the rate observed for SIOD demonstrating that hydroxyl groups bonded to boron increase the rate of TEOS chemisorption. Surface ethoxy groups produced by chemisorption of TEOS decompose at a slower rate in the presence of TMB decomposition products. Possible dependencies on reactor geometries and other deposition conditions may determine which of these two competing effects will control deposition rates. This may explain (in part) why the rate enhancement effect is not always observed in boron-doped SiO2 CVD processes.
Download or read book Proceedings of the Third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films written by Vikram J. Kapoor and published by The Electrochemical Society. This book was released on 1994 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling High density plasma Deposition of SiO2 in SiH4 written by and published by . This book was released on 1997 with total page 52 pages. Available in PDF, EPUB and Kindle. Book excerpt: The authors have compiled sets of gas-phase and surface reactions for use in modeling plasma-enhanced chemical vapor deposition of silicon dioxide from silane, oxygen and argon gas mixtures in high-density-plasma reactors. They have applied the reaction mechanisms to modeling three different kinds of high-density plasma deposition chambers, and tested them by comparing model predictions to a variety of experimental measurements. The model simulates a well mixed reactor by solving global conservation equations averaged across the reactor volume. The gas-phase reaction mechanism builds from fundamental electron-impact cross section data available in the literature, and also includes neutral-molecule, ion-ion, and ion-molecule reaction paths. The surface reaction mechanism is based on insight from attenuated total-reflection Fourier-transform infrared spectroscopy experiments. This mechanism describes the adsorption of radical species on an oxide surface, ion-enhanced reactions leading to species desorption from the surface layer, radical abstractions competing for surface sites, and direct energy-dependent ion sputtering of the oxide material. Experimental measurements of total ion densities, relative radical densities as functions of plasma operating conditions, and net deposition-rate have been compared to model predictions to test and modify the chemical kinetics mechanisms. Results show good quantitative agreement between model predictions and experimental measurements.
Download or read book Novel Surface Chemistry for the Controlled Deposition of Silicon Dioxide on Silicon written by Michael Lester Wise and published by . This book was released on 1994 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Novel Reactor Design and Method for Atmospheric Pressure Chemical Vapor Deposition of Micro and Nano SiO2 x Films in Photovoltaic Applications written by Esmail Issa and published by BoD – Books on Demand. This book was released on 2022-01-01 with total page 243 pages. Available in PDF, EPUB and Kindle. Book excerpt: A laboratory-scale reactor and a novel method for the atmospheric pressure chemical vapor deposition (APCVD) of SiO2-x films are developed. The deposited films are investigated to synthesize heterogeneously upon the substrate surface with the elimination of the so-called gas-phase reaction, hence preventing parasitic oxide particles upon the substrate surface and the reactor inner walls. The films are extensively inspected in terms of chemical and optical properties and utilized for crystalline silicon solar cell applications. Simple reactor design with low safety measures, a wide range of deposition rates, high film resilience, and stability for the intended applications are successfully achieved. The newly developed APCVD SiO2-x is proven to protect the Si wafer surface against texturing in alkaline and acidic solutions. Electroplated metallization schemes of heterojunction and passivated emitter rear contact solar cells are examined with the use of the SiO2-x as a masking layer in the grid electrode-free area.
Download or read book Chemical Vapor Deposition written by Jong-Hee Park and published by ASM International. This book was released on 2001 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Vapor Deposition written by John Milton Blocher and published by . This book was released on 1970 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Model Studies of Dielectric Thin Film Growth written by Laura L. Tedder and published by . This book was released on 1993 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt:
