Download or read book Technologies for Enhancing Multi gate Si MOSFET Performance written by Kyoungsub Shin and published by . This book was released on 2006 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Download or read book FinFETs and Other Multi Gate Transistors written by J.-P. Colinge and published by Springer Science & Business Media. This book was released on 2008 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.

Download or read book Introducing Technology Computer Aided Design TCAD written by Chinmay K. Maiti and published by CRC Press. This book was released on 2017-03-16 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: This might be the first book that deals mostly with the 3D technology computer-aided design (TCAD) simulations of major state-of-the-art stress- and strain-engineered advanced semiconductor devices: MOSFETs, BJTs, HBTs, nonclassical MOS devices, finFETs, silicon-germanium hetero-FETs, solar cells, power devices, and memory devices. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including design for manufacturing (DFM), and from device modeling to SPICE parameter extraction. The book also offers an innovative and new approach to teaching the fundamentals of semiconductor process and device design using advanced TCAD simulations of various semiconductor structures. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. To extend the role of TCAD in today’s advanced technology era, process compact modeling and DFM issues have been included for design–technology interface generation. Unique in approach, this book provides an integrated view of silicon technology and beyond—with emphasis on TCAD simulations. It is the first book to provide a web-based online laboratory for semiconductor device characterization and SPICE parameter extraction. It describes not only the manufacturing practice associated with the technologies used but also the underlying scientific basis for those technologies. Written from an engineering standpoint, this book provides the process design and simulation background needed to understand new and future technology development, process modeling, and design of nanoscale transistors. The book also advances the understanding and knowledge of modern IC design via TCAD, improves the quality in micro- and nanoelectronics R&D, and supports the training of semiconductor specialists. It is intended as a textbook or reference for graduate students in the field of semiconductor fabrication and as a reference for engineers involved in VLSI technology development who have to solve device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simulation system, in addition to presenting many case studies where the user applies TCAD tools in different situations.

Download or read book High k Materials in Multi Gate FET Devices written by Shubham Tayal and published by CRC Press. This book was released on 2021-09-16 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: High-k Materials in Multi-Gate FET Devices focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies. It covers the various way of utilizing high-k dielectrics in multi-gate FETs for enhancing their performance at the device as well as circuit level. Provides basic knowledge about FET devices Presents the motivation behind multi-gate FETs, including current and future trends in transistor technologies Discusses fabrication and characterization of high-k materials Contains a comprehensive analysis of the impact of high-k dielectrics utilized in the gate-oxide and the gate-sidewall spacers on the GIDL of emerging multi-gate FET architectures Offers detailed application of high-k materials for advanced FET devices Considers future research directions This book is of value to researchers in materials science, electronics engineering, semiconductor device modeling, IT, and related disciplines studying nanodevices such as FinFET and Tunnel FET and device-circuit codesign issues.

Download or read book ULSI Process Integration 6 written by C. Claeys and published by The Electrochemical Society. This book was released on 2009-09 with total page 547 pages. Available in PDF, EPUB and Kindle. Book excerpt: ULSI Process Integration 6 covers all aspects of process integration. Sections are devoted to 1) Device Technologies, 2) Front-end-of-line integration (gate stacks, shallow junctions, dry etching, etc.), 3) Back-end-of-line integration (CMP, low-k, Cu interconnect, air-gaps, 3D packaging, etc.), 4) Alternative channel technologies (Ge, III-V, hybrid integration), and 5) Emerging technologies (CNT, graphene, polymer electronics, nanotubes).

Download or read book Nanometer CMOS written by Juin J. Liou and published by CRC Press. This book was released on 2010-02-28 with total page 271 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.

Download or read book Technology Computer Aided Design for Si SiGe and GaAs Integrated Circuits written by G.A. Armstrong and published by IET. This book was released on 2007-11-30 with total page 457 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to deal with a broad spectrum of process and device design, and modeling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-development engineers and scientists involved in microelectronics technology and device design via Technology CAD, and TCAD engineers and developers.

Download or read book Microlithography written by Bruce W. Smith and published by CRC Press. This book was released on 2020-05-01 with total page 913 pages. Available in PDF, EPUB and Kindle. Book excerpt: The completely revised Third Edition to the bestselling Microlithography: Science and Technology provides a balanced treatment of theoretical and operational considerations, from fundamental principles to advanced topics of nanoscale lithography. The book is divided into chapters covering all important aspects related to the imaging, materials, and processes that have been necessary to drive semiconductor lithography toward nanometer-scale generations. Renowned experts from the world’s leading academic and industrial organizations have provided in-depth coverage of the technologies involved in optical, deep-ultraviolet (DUV), immersion, multiple patterning, extreme ultraviolet (EUV), maskless, nanoimprint, and directed self-assembly lithography, together with comprehensive descriptions of the advanced materials and processes involved. New in the Third Edition In addition to the full revision of existing chapters, this new Third Edition features coverage of the technologies that have emerged over the past several years, including multiple patterning lithography, design for manufacturing, design process technology co-optimization, maskless lithography, and directed self-assembly. New advances in lithography modeling are covered as well as fully updated information detailing the new technologies, systems, materials, and processes for optical UV, DUV, immersion, and EUV lithography. The Third Edition of Microlithography: Science and Technology authoritatively covers the science and engineering involved in the latest generations of microlithography and looks ahead to the future systems and technologies that will bring the next generations to fruition. Loaded with illustrations, equations, tables, and time-saving references to the most current technology, this book is the most comprehensive and reliable source for anyone, from student to seasoned professional, looking to better understand the complex world of microlithography science and technology.

Download or read book Strain Engineered MOSFETs written by C.K. Maiti and published by CRC Press. This book was released on 2018-10-03 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.

Download or read book Microelectronics Technology and Devices SBMicro 2008 written by Jacobus W. Swart and published by The Electrochemical Society. This book was released on 2008-08 with total page 679 pages. Available in PDF, EPUB and Kindle. Book excerpt: The SBMicro symposium is a forum dedicated to fabrication and modeling of microsystems, integrated circuits and devices. The goal of the symposium is to bring together researchers in the areas of processing, materials, characterization, modeling and TCAD of integrated circuits, microsensors, microactuators and MEMS. This issue of ECS Transactions contains the papers presented at the 2008 conference.

Download or read book Nanoscale Electronic Devices and Their Applications written by Khurshed Ahmad Shah and published by CRC Press. This book was released on 2020-08-03 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale Electronic Devices and Their Applications helps readers acquire a thorough understanding of the fundamentals of solids at the nanoscale level in addition to their applications including operation and properties of recent nanoscale devices. This book includes seven chapters that give an overview of electrons in solids, carbon nanotube devices and their applications, doping techniques, construction and operational details of channel-engineered MOSFETs, and spintronic devices and their applications. Structural and operational features of phase-change memory (PCM), memristor, and resistive random-access memory (ReRAM) are also discussed. In addition, some applications of these phase-change devices to logic designs have been presented. Aimed at senior undergraduate students in electrical engineering, micro-electronics engineering, physics, and device physics, this book:  Covers a wide area of nanoscale devices while explaining the fundamental physics in these devices  Reviews information on CNT two- and three-probe devices, spintronic devices, CNT interconnects, CNT memories, and NDR in CNT FETs  Discusses spin-controlled devices and their applications, multi-material devices, and gates in addition to phase-change devices  Includes rigorous mathematical derivations of the semiconductor physics  Illustrates major concepts thorough discussions and various diagrams

Download or read book Semiconductor Devices and Technologies for Future Ultra Low Power Electronics written by D. Nirmal and published by CRC Press. This book was released on 2021-12-09 with total page 303 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the fundamentals and significance of 2-D materials and related semiconductor transistor technologies for the next-generation ultra low power applications. It provides comprehensive coverage on advanced low power transistors such as NCFETs, FinFETs, TFETs, and flexible transistors for future ultra low power applications owing to their better subthreshold swing and scalability. In addition, the text examines the use of field-effect transistors for biosensing applications and covers design considerations and compact modeling of advanced low power transistors such as NCFETs, FinFETs, and TFETs. TCAD simulation examples are also provided. FEATURES Discusses the latest updates in the field of ultra low power semiconductor transistors Provides both experimental and analytical solutions for TFETs and NCFETs Presents synthesis and fabrication processes for FinFETs Reviews details on 2-D materials and 2-D transistors Explores the application of FETs for biosensing in the healthcare field This book is aimed at researchers, professionals, and graduate students in electrical engineering, electronics and communication engineering, electron devices, nanoelectronics and nanotechnology, microelectronics, and solid-state circuits.

Download or read book SiGe materials Processing and Devices written by David Louis Harame and published by The Electrochemical Society. This book was released on 2004 with total page 1242 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Microelectronics Technology and Devices SBMicro 2009 written by Davies William de Lima Monteiro and published by The Electrochemical Society. This book was released on 2009-08 with total page 639 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions features eight invited and sixty-seven regular papers on technology, devices, systems, optoelectronics, modeling and characterization; all either directly or indirectly related to microelectronics. The topics presented herein reveal the multidisciplinary character of this field, which definitely incites the highly cooperative trace of human nature.

Download or read book Advances in Imaging and Electron Physics written by and published by Academic Press. This book was released on 2012-11-01 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Imaging and Electron Physics merges two long-running serials--Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. This series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science and digital image processing, electromagnetic wave propagation, electron microscopy, and the computing methods used in all these domains. - Contributions from leading authorities - Informs and updates on all the latest developments in the field

Download or read book High Mobility Materials for CMOS Applications written by Nadine Collaert and published by Woodhead Publishing. This book was released on 2018-06-29 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt: High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology. - Addresses each of the challenges of utilizing high mobility materials for CMOS applications, presenting possible solutions and the latest innovations - Covers the latest advances in research on heterogeneous integration, gate stack, device design and scalability - Provides a broad overview of the topic, from materials integration to circuits