Download or read book Techniques of Controlling Threshold Voltage of Metal Insulated Gate Field Effect Transistor MIGFET written by Sudershan Kumar Kalia and published by . This book was released on 1968 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A STUDY IN THE OPERATION AND APPLICATION OF INSULATED GATE FIELD EFFECT TRANSISTOR AND THE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR written by and published by . This book was released on 1969 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Computer Aided Analysis of Insulated Gate Field Effect Transistors written by Mark Brown Barron and published by . This book was released on 1969 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: The classical analysis of Insulated Gate Field-Effect Transistors (IGFET) is reviewed and the corresponding theory is compared with experimental characteristics. The limitations of this theory are indicated and the reasons for the limitations are explained in terms of the device physics. Two operating configurations which do not comply with the classical theory are subsequently analyzed with the aid of a digital computer; these are low-level current operation for gate voltages near threshold, and punch-through operation for short devices. The numerical data obtained from the low-level analysis is compared with experimental V-I characteristics, and it is shown that the device can be accurately modeled using the classical surface physics equations. Algebraic approximations, which offer certain advantages over numerical analysis, are shown to adequately describe transistor operation over certain current ranges. Derivations of the finite difference equations for numerical iterative analysis of the IGFET are described in detail. Certain stability problems are found to occur and methods for avoiding these are presented. Results of the analyses of short-channel devices are presented in the form of three-dimensional projections of the potential and carrier distributions. (Author).

Download or read book Field effect Electronics written by William Gosling and published by Wiley-Interscience. This book was released on 1971 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Download or read book Properties and Applications of the Insulated Gate Field Effect Transistor written by Louis Sickles and published by . This book was released on 1963 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Industry Standard FDSOI Compact Model BSIM IMG for IC Design written by Chenming Hu and published by Woodhead Publishing. This book was released on 2019-05-22 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model.

Download or read book Semiconductor International written by and published by . This book was released on 2004 with total page 814 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Practical Electronics for Inventors 2 E written by Paul Scherz and published by McGraw Hill Professional. This book was released on 2006-12-05 with total page 977 pages. Available in PDF, EPUB and Kindle. Book excerpt: THE BOOK THAT MAKES ELECTRONICS MAKE SENSE This intuitive, applications-driven guide to electronics for hobbyists, engineers, and students doesn't overload readers with technical detail. Instead, it tells you-and shows you-what basic and advanced electronics parts and components do, and how they work. Chock-full of illustrations, Practical Electronics for Inventors offers over 750 hand-drawn images that provide clear, detailed instructions that can help turn theoretical ideas into real-life inventions and gadgets. CRYSTAL CLEAR AND COMPREHENSIVE Covering the entire field of electronics, from basics through analog and digital, AC and DC, integrated circuits (ICs), semiconductors, stepper motors and servos, LCD displays, and various input/output devices, this guide even includes a full chapter on the latest microcontrollers. A favorite memory-jogger for working electronics engineers, Practical Electronics for Inventors is also the ideal manual for those just getting started in circuit design. If you want to succeed in turning your ideas into workable electronic gadgets and inventions, is THE book. Starting with a light review of electronics history, physics, and math, the book provides an easy-to-understand overview of all major electronic elements, including: Basic passive components o Resistors, capacitors, inductors, transformers o Discrete passive circuits o Current-limiting networks, voltage dividers, filter circuits, attenuators o Discrete active devices o Diodes, transistors, thrysistors o Microcontrollers o Rectifiers, amplifiers, modulators, mixers, voltage regulators ENTHUSIASTIC READERS HELPED US MAKE THIS BOOK EVEN BETTER This revised, improved, and completely updated second edition reflects suggestions offered by the loyal hobbyists and inventors who made the first edition a bestseller. Reader-suggested improvements in this guide include: Thoroughly expanded and improved theory chapter New sections covering test equipment, optoelectronics, microcontroller circuits, and more New and revised drawings Answered problems throughout the book Practical Electronics for Inventors takes you through reading schematics, building and testing prototypes, purchasing electronic components, and safe work practices. You'll find all thisin a guide that's destined to get your creative-and inventive-juices flowing.

Download or read book FET Circuits written by Rufus P. Turner and published by . This book was released on 1967 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book FinFETs and Other Multi Gate Transistors written by J.-P. Colinge and published by Springer Science & Business Media. This book was released on 2008 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.

Download or read book Nanowire Field Effect Transistors Principles and Applications written by Dae Mann Kim and published by Springer Science & Business Media. This book was released on 2013-10-23 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.

Download or read book MOSFET Modeling BSIM3 User s Guide written by Yuhua Cheng and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.

Download or read book Planar Double Gate Transistor written by Amara Amara and published by Springer Science & Business Media. This book was released on 2009-01-16 with total page 215 pages. Available in PDF, EPUB and Kindle. Book excerpt: Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.

Download or read book Biotechniques Theory Practice written by S. V. S. Rana and published by Rastogi Publications. This book was released on 2008 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Advanced VLSI Technology written by Cherry Bhargava and published by CRC Press. This book was released on 2022-09-01 with total page 245 pages. Available in PDF, EPUB and Kindle. Book excerpt: The trend in design and manufacturing of very large-scale integrated (VLSI) circuits is towards smaller devices on increasing wafer dimensions. VLSI is the inter-disciplinary science of the process of creating an integrated circuit (IC) by combining thousands of transistors into a single chip. VLSI design can reduce the area of the circuit, making it less expensive and requiring less power.The book gives an understanding of the underlying principles of the subject. It not only focuses on circuit design process obeying VLSI rules but also on technological aspects of prototyping and fabrication. All the clocking processes, interconnects, and circuits of CMOS are explained in this book in an understandable format. The book provides contents on VLSI Physical Design Automation, Design of VLSI Devices and also its Impact on Physical Design.The book is intended as a reference book for senior undergraduate, first-year post graduate students, researchers as well as academicians in VLSI design, electronics & electrical engineering, and materials science. The basics and applications of VLSI design from STA, PDA and VLSI Testing along with FPGA based Prototyping are covered in a comprehensive manner.The latest technology used in VLSI design is discussed along with the available tools for FPGA prototyping as well as ASIC design. Each unit contains technical questions with solutions at the end.Technical topics discussed in the book include: • Static Timing Analysis• CMOS Layout and Design rules• Physical Design Automation• Testing of VLSI Circuits• Software tools for Frontend and Backend design.

Download or read book Junctionless Field Effect Transistors written by Shubham Sahay and published by John Wiley & Sons. This book was released on 2019-01-28 with total page 619 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.