Download or read book Synthesis and Characterization of Highly mismatched III V Semiconductors by Gas source Molecular Beam Epitaxy written by Tsung-Pei Chin and published by . This book was released on 1993 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book III V Semiconductors written by Herbert C. Freyhardt and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: Springer-Verlag, Berlin Heidelberg, in conjunction with Springer-Verlag New York, is pleased to announce a new series: CRYSTALS Growth, Properties, and Applications The series presents critical reviews of recent developments in the field of crystal growth, properties, and applications. A substantial portion of the new series will be devoted to the theory, mechanisms, and techniques of crystal growth. Occasionally, clear, concise, complete, and tested instructions for growing crystals will be published, particularly in the case of methods and procedures that promise to have general applicability. Responding to the ever-increasing need for crystal substances in research and industry, appropriate space will be devoted to methods of crystal characterization and analysis in the broadest sense, even though reproducible results may be expected only when structures, microstructures, and composition are really known. Relations among procedures, properties, and the morphology of crystals will also be treated with reference to specific aspects of their practical application. In this way the series will bridge the gaps between the needs of research and industry, the pos sibilities and limitations of crystal growth, and the properties of crystals. Reports on the broad spectrum of new applications - in electronics, laser tech nology, and nonlinear optics, to name only a few - will be of interest not only to industry and technology, but to wider areas of applied physics as well and to solid state physics in particular. In response to the growing interest in and importance of organic crystals and polymers, they will also be treated.
Download or read book Epitaxial Growth and Characterization of Narrow Bandgap III V Semiconductors and Related Semimetals written by Sukgeun Choi and published by . This book was released on 2006 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2006 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth of Strained III V Semiconductors by Molecular Beam Epitaxy written by Michael Ekenstedt and published by . This book was released on 1993 with total page 63 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book III V Semiconductors written by Herbert C. Freyhardt and published by Springer. This book was released on 1980-06-01 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: Springer-Verlag, Berlin Heidelberg, in conjunction with Springer-Verlag New York, is pleased to announce a new series: CRYSTALS Growth, Properties, and Applications The series presents critical reviews of recent developments in the field of crystal growth, properties, and applications. A substantial portion of the new series will be devoted to the theory, mechanisms, and techniques of crystal growth. Occasionally, clear, concise, complete, and tested instructions for growing crystals will be published, particularly in the case of methods and procedures that promise to have general applicability. Responding to the ever-increasing need for crystal substances in research and industry, appropriate space will be devoted to methods of crystal characterization and analysis in the broadest sense, even though reproducible results may be expected only when structures, microstructures, and composition are really known. Relations among procedures, properties, and the morphology of crystals will also be treated with reference to specific aspects of their practical application. In this way the series will bridge the gaps between the needs of research and industry, the pos sibilities and limitations of crystal growth, and the properties of crystals. Reports on the broad spectrum of new applications - in electronics, laser tech nology, and nonlinear optics, to name only a few - will be of interest not only to industry and technology, but to wider areas of applied physics as well and to solid state physics in particular. In response to the growing interest in and importance of organic crystals and polymers, they will also be treated.
Download or read book CVD of Compound Semiconductors written by Anthony C. Jones and published by Wiley-VCH. This book was released on 2008-11-20 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical growth methods of electronic materials are the keystone of microelectronic device processing. This book discusses the applications of metalorganic chemistry for the vapor phase deposition of compound semiconductors. Vapor phase methods used for semiconductor deposition and the materials properties that make the organometallic precursors useful in the electronics industry are discussed for a variety of materials. Topics included: * techniques for compound semiconductor growth * metalorganic precursors for III-V MOVPE * metalorganic precursors for II-VI MOVPE * single-source precursors * chemical beam epitaxy * atomic layer epitaxy Several useful appendixes and a critically selected, up-to-date list of references round off this practical handbook for materials scientists, solid-state and organometallic chemists, and engineers.
Download or read book III V Semiconductor Materials Grown by Molecular Beam Epitaxy for Infrared and High Speed Transistor Applications written by Cheng-Yun Chou and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Furthermore, around 290 °C a tradeoff was reached between crystallinity and optimized dopant incorporation of Te into InAs for the lowest sheet resistance. Lastly, Chapter 5 discusses the effect of substrate tilting on the material properties of MBE grown GaAsSb alloys closely lattice-matched to an InP substrate. InP(100) substrates tilted 0°off-(on-axis), 2°off-, 3°off-, and 4°off-axis were used for MBE growth; then the material qualities of GaAsSb epitaxial layers were compared using various techniques, including high resolution XRD, photoluminescence (PL) and transmission-line measurements (TLM). Substrate tilting improved the crystalline quality of the GaAsSb alloys, as shown by a narrower XRD linewidth and enhanced optical quality as evidenced by a strong PL peak. The results of TLM show that the lowest sheet resistance was achieved at a 2° off-axis tilt.
Download or read book III V Compound Semiconductors Characterization written by Yi-Hsing Chen and published by . This book was released on 1998 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Embedded Dielectric Microstructures in Molecular Beam Epitaxy written by Daniel Joseph Ironside and published by . This book was released on 2018 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt: Seamless integration of embedded dielectric microstructures in III-V crystal growth is a continued area of research due to its numerous high-impact applications. Historically, investigations into embedded dielectric microstructures within existing crystal growth techniques were focused on blocking dislocations at the III-V/dielectric interface in the production of low defect relaxed high mismatched heteroepitaxy. However, recent efforts have broadened the use of embedded dielectric microstructures for enhancement of optoelectronic device functionality and development of monolithic growth schemes toward integrated photonic circuits. The central challenge of embedding dielectric microstructures in III-V materials is achieving single-crystal high-quality planar coalescence within existing conventional III-V crystal growth techniques without defect. While prevalent in the field of III-V crystal growth, solid-source Molecular Beam Epitaxy (MBE) has a well-known "coalescence problem," historically lacking approaches that achieve planar coalescence over dielectric microstructures. Limited coalescence is in large part due to low diffusion of III-adatoms on dielectric surfaces, typically below 300nm, readily forming polycrystalline deposition on dielectric surfaces exceeding this diffusion length. Several solid-source MBE highly-selective growth and lateral epitaxial overgrowth (LEO) growth approaches have been reported; however, none demonstrating complete planar coalescence over dielectric microstructures. In this dissertation, to overcome the "coalescence problem," we demonstrate for the first time a general methodology for an all-MBE growth of high-quality planar coalescence over a variety of embedded dielectric microstructures. Underpinning the approach, we developed a two-stage all-MBE growth approach for GaAs and InAs on (001) substrates, producing highly selective LEO and planarization, returning the growth front to the (001) surface. Characterization of the growth approach demonstrates for the first time an all-MBE approach to planar coalescence. In application of the two-stage all-MBE growth approach towards photonics, we demonstrate enhancement of quantum emitters using buried silica gratings arrays and develop several methodologies for embedded high-contrast photonic materials through self-formed air voids and molded air channel processes. Lastly, in application to high-quality relaxed high mismatch heteroepitaxy, we demonstrate for the first time an all-MBE approach to III-V metamorphic heteroepitaxy, demonstrating threading dislocation reduction in InAs/GaAs metamorphics with high fill factor embedded silica gratings. Thus, from the material presented here, we provide several significant advances to the long-standing challenge of marrying high-quality semiconductor crystal growth with dielectric microstructures, unlocking several high-impact applications, including high-quality material pathways for enhanced quantum emitters and embedded metasurfaces as well as an all-MBE approach toward heterogeneous III-V integration on silicon
Download or read book III V Semiconductor Materials and Devices written by R. J. Malik and published by North Holland. This book was released on 1989 with total page 748 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.
Download or read book Advances in Nanoparticles written by Luca Pasquini and published by MDPI. This book was released on 2020-04-02 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on recent advances in the synthesis of nanoparticles, their characterization, and their applications in different fields such as catalysis, photonics, magnetism, and nanomedicine. Nanoparticles receive a large share of the worldwide research activity in contemporary materials science. This is witnessed by the number of scientific papers with "nanoparticle" as a keyword, increasing linearly in the last 10 years from about 16,000 in 2009 to about 50,000 in 2019. This impressive widespread interest stems from the basic science of nanoparticles, which constitute a bridge between the molecular and the bulk worlds, as well as from their technological applications. The preparation of nanoparticles is a crossroad of materials science where chemists, physicists, engineers, and even biologists frequently meet, leading to a continuous improvement of existing techniques and to the invention of new methods. The reader interested in nanoparticles synthesis and properties will here find a valuable selection of scientific cases that cannot cover all methods and applications relevant to the field, but still provide an updated overview on the fervent research activity focused on nanoparticles.
Download or read book Study of Interfaces in III V Semiconductors Grown by Molecular Beam Epitaxy written by Frederick G. Johnson and published by . This book was released on 1993 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxy written by Hajime Asahi and published by John Wiley & Sons. This book was released on 2019-04-15 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.
Download or read book Some Investigations of Molecular Beam Epitaxial Growth of III V Semiconductor Films Via Monte Carlo Computer Simulations Carrier Tunneling and Spectroscopic Ellipsometry written by A. Madbukar and published by . This book was released on 1984 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: Experimental work this past year was primarily directed toward enhancing the growth and characterization capabilities of the PI's laboratory. Significant improvements were completed on the MBE system and the in-situ ellipsometry apparatus was demonstrated in a bread board setup. Theoretical work consisted of preliminary Monte-Carlo investigation of the MBE growth III-V compounds. Extensive progress was made on modeling the phase separation occurring during growth of Al(x)Ga(1-x)As on (110) GaAs. A mismatch induced, strain dependent exchange reaction between Al and Ga was shown to give long period variations in the Al concentration. The specific predictions of the theory will be tested in a collaborative effort with JPL.
Download or read book Fundamentals of III V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
