Download or read book Synthesis and Characterization of Copper and Titanium Compounds and Their Application as Precursors in Chemical Vapor Deposition written by Elisabeth-Charlotte Plappert and published by . This book was released on 1995 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Synthesis and Characterization of New Copper I Compounds and Their Use as Precursors for Chemical Vapor Deposition of Copper written by Hyun-Koock Shin and published by . This book was released on 1992 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1988 with total page 752 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design Synthesis and Characterization of Volatile Precursors for the Metallo organic Chemical Vapor Deposition MOCVD of Platinum and Palladium and Associated Computational Studies of Palladium and Copper Sila diketonates written by Kenneth S. Bousman and published by . This book was released on 2006 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Part I Synthesis Characterization and Reactivity of Low Valent Organotitanium Complexes Part II Chemical Vapor Deposition of Rhodium Metal Thin Films written by Yujian You and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Titanium(II) complex CpTiCl(dmpe)$sb2$ is prepared by reducing (CpTiCl$sb2)sb{rm x}$ with n-butyllithium in the presence of 1,2-bis(dimethylphosphino)ethane (dmpe). Subsequent treatment with methyllithium or n-butyllithium affords CpTiMe(dmpe)$sb2$ and CpTiH(dmpe)$sb2$, respectively. The crystal structures of CpTiX(dmpe)$sb2$ (X = Cl, Me, H) show unusually long metal ligand distances. Analogous treatment of (Cp$sp*$Ti(BH$sb4$)Cl) $sb2$ with n-butyllithium affords Cp$sp*$Ti(BH$sb4$)(PP), where PP is dmpe or (t-butyl)tris(dimethylphosphino-methyl)silane. All of these titanium(II) complexes catalyze oligomerization of ethylene to 1-butene, 2-ethyl-1-butene, and 3-methyl-1-pentene, probably via metallacyclopentane intermediates. Oxidations of the neutral titanium(II) complexes with 1,1$spprime$-dimethylferrocinium salts afford the first examples of cationic alkyltitanium(III) complexes: (CpTiX(dmpe)$sb2rbrack$ BAr$sb4,$ where Ar = Ph or 3,5-(CF$sb3)sb2$C$sb6$H$sb3$ (FPB). Two other complexes, (TiMe$rm sb2(dmpe)sb2rbrack$ FPB and (Cp$sp*$Ti(BH$sb4$)(dmpe)) FPB, have been prepared by oxidation of the corresponding titanium(II) species. Crystallographic studies of (CpTiH(dmpe)$sb2$) FPB, (TiMe$sb2$(dmpe)$sb2$) FPB, and (Cp$sp*$Ti(BH$sb4$)(dmpe)) FPB reveal that the titanium(III) cations show a lengthening of the Ti-P bond distances owing to a decrease in metal-ligand $pi$-back-bonding. The cationic titanium(III) alkyls neither oligomerize nor polymerize ethylene. Treatment of Rh(hfac)(CH$sb2$=CH$sb2)sb2$ (hfac = hexafluoroacetylacetonate) with vinyl-trimethylsilane, 1,2-bis(trimethylsilyl)acetylene, Cu(hfac)(COT), or PMe$sb3$ affords a series of new complexes. High purity rhodium films have been deposited at 200-300 $spcirc$C using Rh(hfac)(CH$sb2$ = CH$sb2)sb2$ as a CVD precursor. The deposition occurs via the disproportionation reaction 3 Rh(hfac)(alkene)$sb2$ $longrightarrow$ 2 Rh + Rh(hfac)$sb3$ + 6 alkene. Ultra high vacuum studies show that Rh(hfac)(CH$sb2$ = CH$sb2)sb2$ adsorbs molecularly on copper surfaces up to 130 K. The hfac groups are oriented perpendicular to the surface at 220 K. Reduction of rhodium(I) occurs at approximately 300 K. Decomposition of surface-bound hfac groups occurs at higher temperatures. This process does not occur under CVD conditions owing to the higher coverages characteristic of this process, which favor bimolecular reactions that lead to the assembly of the observed Rh(hfac)$sb3$ product.
Download or read book Design and Applications of Novel Titanium and Copper Containing Mesoporous Organic inorganic Hybrid Materials written by Ruth Ballesteros Gómez and published by Librería-Editorial Dykinson. This book was released on 2011-03-24 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: Different titanium-containing hybrid mesoporous materials have been successfully synthesized from cyclopentadienyl or alkoxo titanium derivatives as titanium sources. The immobilization of the titanium complex has been carried out by grafting or tethering method in order to compare the catalytic performance of each process. Furthermore, two different capped agents have been used to silylate the support surface in order to increase the hydrophobic character of the final catalyst. In chapter 6 it would be evaluated if the choice of the capped agent employed has consequences in the activity of the catalyst in determined epoxidation reactions.
Download or read book Chemical Vapor Deposition and Characterization of Titanium Dioxide Thin Films written by David Christopher Gilmer and published by . This book was released on 1998 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Synthesis characterization and application of novel organometallic precursors for organometallic vapor deposition written by Kenneth Blake Kidd and published by . This book was released on 1989 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book An Examination of Precursor Chemistry and Its Effect on Microstructure Development in Chemical Vapor Deposition of Titanium Dioxide and Aluminum Thin Films written by Charles John Taylor and published by . This book was released on 1999 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book American Doctoral Dissertations written by and published by . This book was released on 2000 with total page 816 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Precursor Chemistry of Advanced Materials written by Roland A. Fischer and published by Springer Science & Business Media. This book was released on 2005-09-29 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: Material synthesis by the transformation of organometallic compounds (precursors) by vapor deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD) has been in the forefront of modern day research and development of new materials. There exists a need for new routes for designing and synthesizing new precursors as well as the application of established molecular precursors to derive tuneable materials for technological demands. With regard to the precursor chemistry, a most detailed understanding of the mechanistic complexity of materials formation from molecular precursors is very important for further development of new processes and advanced materials. To emphasize and stimulate research in these areas, this volume comprises a selection of case studies covering various key-aspects of the interplay of precursor chemistry with the process conditions of materials formation, particularly looking at the similarities and differences of CVD, ALD and nanoparticle synthesis, e.g. colloid chemistry, involving tailored molecular precursors.
Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Download or read book Synthesis Characterization and Reactivity of Low Valent Organotitanium Complexes written by Yujian You and published by . This book was released on 1996 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metal organic Chemical Vapor Deposition of Indium Oxide Based Transparent Conducting Oxide Thin Films written by Jun Ni and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Four novel diamine adducts of bis(hexafluoroacetylacetonato)zinc [Zn(hfa)2·(diamine)] can be synthesized in a single step reaction. Single crystal x-ray diffraction studies reveal monomeric, six-coordinate structures. The thermal stabilities and vapor phase transport properties of these complexes are considerably greater than those of conventional solid/liquid zinc metal-organic chemical vapor deposition (MOCVD) precursors. Of the four complexes, bis(1,1,1,5,5,5-hexafluoro-2,4-pentadionato)(N,N '-diethylethylenediamine)zinc [Zn(hfa)2 ( N,N'-DEA)], is particularly effective in the growth of thin films of the transparent conducting oxide Zn- and Sn-doped In2O3 (ZITO) due to its superior volatility and low melting point of 64°C.
Download or read book A Kinetic and Mechanistic Study of the Chemical Vapor Deposition of Titanium Dioxide Using Alkoxide Precursors written by Carl Pete Fictorie and published by . This book was released on 1997 with total page 494 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thermal Atomic Layer Deposition of Titanium Nitride Films written by Anuththara Chalani Upeksha Abesinghe Arachchige and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Due to the continuous miniaturization of microelectronic devices, robust deposition techniques are required which can provide continuous and conformal thin films even in high aspect ratio structures. Atomic Layer Deposition (ALD) is an excellent choice of deposition technique as it is capable of providing perfect film coverage. Because of its self-limited growth mechanism, ALD can afford sub-nanometer thickness control. Precursors used in ALD should be volatile, thermally stable at the deposition temperature, and highly reactive towards the co-regent. Traditionally, ALD has been used to grow metal oxide films. However, the microelectronics industry now demands ALD for metals and metal nitrides. Titanium nitride (TiN) is widely used as adhesion layers, electrode material, and diffusion barriers. Halogenated precursors used in TiN ALD studies require high deposition temperatures and the corrosive byproducts can etch the substrates. Dialkylamido titanium precursors have low thermal stabilities, and hence, significant carbon incorporation arises in TiN ALD. Moreover, during the TiN depositions, current Ti(IV) precursors should reduce to Ti(III) and this reduction step is often incomplete. Hence, the synthesis of novel Ti(III) precursors which do not require reduction steps is needed. The research herein seeks to develop highly volatile and thermally stable Ti(III) and Ti(IV) precursors and to carry out TiN ALD with highly thermally stable titanium metal-organic precursors.ALD of TiN film was carried out using Ti(tBu2DAD)2 and 1,1-dimethylhydrazine. Ti(tBu2DAD)2 is highly volatile and thermally stable with a decomposition temperature ≥ 350 °C, which is much higher than commonly used metal-organic precursors. According to the plots of growth rate versus pulse length on SiO2 substrates, self-limited growth behavior was observed ≤ 3.0 s for Ti(tBu2DAD)2 and ≤ 0.1 s 1,1dimethylhydrazine with a saturative growth rate of 0.28 Å/cycle. An ALD window was observed from 325 to 350 °C, and a linear relationship was observed for a plot of thickness versus the number of cycles at a deposition temperature of 325 °C for TiN growth on SiO2 substrates. GI-XRD revealed the presence of nanocrystalline material on the films deposited at 350 and 400 °C. Atomic force microscopy of 30 nm thick films deposited at 325 and 350 °C showed RMS roughness values of 4.1% and 5.2% of the film thicknesses, respectively. X-ray photoelectron spectroscopy analyses were performed on films deposited within the ALD window. Both samples revealed TiOxNy upon argon ion sputtering. TiN ALD was attempted using Ti(iPr2DAD)3 and 1,1-dimethylhydrazine, but highly resistive, rough, and poor-quality films were obtained. Novel Ti(III) complexes containing pyrazolate and carbohydrazide ligands were synthesized and characterized. These complexes are non-volatile and thermally unstable. Hence, they are not viable candidates for the TiN ALD study. However, Ti(III) pyrazolate complexes unexpectedly were found to decompose thermally to afford Ti(IV) pyrazolates and possibly Ti metal. A disproportionation mechanism is proposed. This finding may be valuable for the development of Ti metal, TiN, and TiSi2 CVD and ALD precursors.
