Download or read book Switch Level Timing Simulation of MOS VLSI Metal Oxide Semiconductor Very Large Scale Integrated Circuits written by Vasant B. Rao and published by . This book was released on 1985 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report deals with the development of a fast and accurate simulation tool for very-large-scale integrated (VLSI) circuits consisting of metal-oxide-semiconductor (MOS) transistors. Such tools are called switch-level timing simulators and they provide adequate information on the performance of the circuits with a reasonable expenditure of computation time even for very large circuits. The algorithms presented in this thesis can handle only n-channel MOS(NMOS) circuits, but are easily extendible to handle complementary MOS(CMOS) circuits as well. The algorithms presented in this report have been implemented in a computer program called MOSTIM. In all the circuits simulated thus far, MOSTIM provides timing information with an accuracy of within 10% of that provided by SPICE2, at approximately two orders of magnitude faster in simulation speed. (Author).
Download or read book Switch Level Timing Simulation of MOS VLSI Circuits written by Vasant B. Rao and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt: Only two decades ago most electronic circuits were designed with a slide-rule, and the designs were verified using breadboard techniques. Simulation tools were a research curiosity and in general were mistrusted by most designers and test engineers. In those days the programs were not user friendly, models were inadequate, and the algorithms were not very robust. The demand for simulation tools has been driven by the increasing complexity of integrated circuits and systems, and it has been aided by the rapid decrease in the cost of com puting that has occurred over the past several decades. Today a wide range of tools exist for analYSiS, deSign, and verification, and expert systems and synthesis tools are rapidly emerging. In this book only one aspect of the analysis and design process is examined. but it is a very important aspect that has received much attention over the years. It is the problem of accurate circuit and timing simulation.
Download or read book MOSFET Models for VLSI Circuit Simulation written by Narain D. Arora and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.
Download or read book Digital Timing Macromodeling for VLSI Design Verification written by Jeong-Taek Kong and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt: Digital Timing Macromodeling for VLSI Design Verification first of all provides an extensive history of the development of simulation techniques. It presents detailed discussion of the various techniques implemented in circuit, timing, fast-timing, switch-level timing, switch-level, and gate-level simulation. It also discusses mixed-mode simulation and interconnection analysis methods. The review in Chapter 2 gives an understanding of the advantages and disadvantages of the many techniques applied in modern digital macromodels. The book also presents a wide variety of techniques for performing nonlinear macromodeling of digital MOS subcircuits which address a large number of shortcomings in existing digital MOS macromodels. Specifically, the techniques address the device model detail, transistor coupling capacitance, effective channel length modulation, series transistor reduction, effective transconductance, input terminal dependence, gate parasitic capacitance, the body effect, the impact of parasitic RC-interconnects, and the effect of transmission gates. The techniques address major sources of errors in existing macromodeling techniques, which must be addressed if macromodeling is to be accepted in commercial CAD tools by chip designers. The techniques presented in Chapters 4-6 can be implemented in other macromodels, and are demonstrated using the macromodel presented in Chapter 3. The new techniques are validated over an extremely wide range of operating conditions: much wider than has been presented for previous macromodels, thus demonstrating the wide range of applicability of these techniques.
Download or read book MOSFET Models for VLSI Circuit Simulation written by Narain Arora and published by Springer. This book was released on 1993-01-01 with total page 605 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book has 12 chapters. Starting from the overview of various aspects of device modeling for circuit simulators, a brief but complete review of seminconductor device physics and pn junction theory required for understanding MOSFET models is covered. The MOS transistor characteristics as applied to current MOS technologies are then discussed. First, the theory of MOS capacitors that is essential for understanding of MOS transistor models are discussed. This is followed by different types of MOSFET models such as threshold voltage, DC (steady-state), AC, and reliability models and the corresponding model parameter determination. The diode and MOSFET models as implemented in Berkeley SPICE, are also covered. Finally, the statistical variation of model parameters due to process variations are discussed.
Download or read book Statistical Design of MOS VLSI Very Large Scale Integrated Circuits with Designed Experiments written by Tat-Kwan E. Yu and published by . This book was released on 1990 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt: A new approach for the statistical design and analysis of Metal Oxide Semiconductor is introduced. The proposed approach approximates the circuit performances, such as gain and delay, by fitted models. The fitted models are then used as surrogates of the circuit simulator to predict and optimize the parametric yield with computation efficiency and to achieve off-line quality control. The use of statistical design and analysis of experiments for model construction have been investigated theoretically and experimentally, and different methods to assess the adequacy of a fitted performance model have been studied. Statistical design; VLSI design; Experimental design; Very large scale integrated circuits; Electronic equipment; Metal oxide semiconductors; Thesis. (jg).
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1992 with total page 604 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Process and Device Simulation for MOS VLSI Circuits written by P. Antognetti and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ ent levels (government agencies, private industries, defense de partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta tistical fluctuations.
Download or read book Switch level Timing Simulation of MOS VLSI Circuits written by Vasant Bangalore Rao and published by . This book was released on 1985 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report deals with the development of a fast and accurate simulation tool for very-large-scale integrated (VLSI) circuits consisting of metal-oxide-semiconductor (MOS) transistors. Such tools are called switch-level timing simulators and they provide adequate information on the performance of the circuits with a reasonable expenditure of computation time even for very large circuits. The algorithms presented in this thesis can handle only n-channel MOS(NMOS) circuits, but are easily extendible to handle complementary MOS(CMOS) circuits as well. The algorithms presented in this report have been implemented in a computer program called MOSTIM. In all the circuits simulated thus far, MOSTIM provides timing information with an accuracy of within 10% of that provided by SPICE2, at approximately two orders of magnitude faster in simulation speed. (Author).
Download or read book Speed Up Techniques for Complementary Metal Oxide Semiconductor Very Large Scale Integration written by B. T. Kelley and published by . This book was released on 1984 with total page 387 pages. Available in PDF, EPUB and Kindle. Book excerpt: Methods of increasing the operating speed of integrated circuits were investigated and a reference to speed-up techniques was generated. Precharging, a specific method, was applied to existing and newly designed CMOS/SOS circuit elements and evaluated. The SPICE computer program was used for transient signal timing analysis. Precharging was applied to a test circuit, the first bitslice of a previously designed ALU circuit and three newly designed chip circuit elements, to determine its effect on the operating speed of each circuit. Precharge configurations of each circuit were then simulated with SPICE. The results of this thesis research indicate that precharging can be applied to both existing and newly designed circuits, that it significantly reduces low-to-high signal transition delays, if applied correctly, and, in general, it has a detremental effect on high-to-low signal transitions, and increases the associated delays. In addition, the effectiveness of precharging is dependent on the amount of current applied to the precharged nodes.
Download or read book Government Reports Annual Index written by and published by . This book was released on 1986 with total page 900 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Accurate Timing Verification for Digial VLSI Designs written by Young Hwan Kim and published by . This book was released on 1988 with total page 542 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Publications written by United States. National Bureau of Standards and published by . This book was released on 1989 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Publications of the National Institute of Standards and Technology Catalog written by National Institute of Standards and Technology (U.S.) and published by . This book was released on 1991 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book CMOS Digital Integrated Circuits written by Sung-Mo Kang and published by . This book was released on 2002 with total page 655 pages. Available in PDF, EPUB and Kindle. Book excerpt: The fourth edition of CMOS Digital Integrated Circuits: Analysis and Design continues the well-established tradition of the earlier editions by offering the most comprehensive coverage of digital CMOS circuit design, as well as addressing state-of-the-art technology issues highlighted by the widespread use of nanometer-scale CMOS technologies. In this latest edition, virtually all chapters have been re-written, the transistor model equations and device parameters have been revised to reflect the sigificant changes that must be taken into account for new technology generations, and the material has been reinforced with up-to-date examples. The broad-ranging coverage of this textbook starts with the fundamentals of CMOS process technology, and continues with MOS transistor models, basic CMOS gates, interconnect effects, dynamic circuits, memory circuits, arithmetic building blocks, clock and I/O circuits, low power design techniques, design for manufacturability and design for testability.
Download or read book Government Reports Announcements Index written by and published by . This book was released on 1987-06 with total page 1410 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Digest of Technical Papers written by and published by . This book was released on 1988 with total page 590 pages. Available in PDF, EPUB and Kindle. Book excerpt:
