Download or read book Surface Morphology Evolution in Silicon During Ion Beam Processing written by and published by . This book was released on 1999 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The Semiconductor Industry Association (SIA) projects that the semiconductor chips used in personal computers and scientific workstations will reach five times the speed and ten times the memory capacity of the current pentium-class processor by the year 2007. However, 1 GHz on-chip clock speeds and 64 Gbits/Chip DRAM technology will not come easy and without a price. Such technologies will require scaling the minimum feature size of CMOS devices (the transistors in the silicon chip) down to below 100nm from the current 180 to 250 nm. This requirement has profound implications for device manufacturing. Existing processing techniques must increasingly be understood quantitatively and modeled with unprecedented precision. Indeed, revolutionary advances in the development of physics-based process simulation tools will be required to achieve the goals for cost efficient manufacturing, and to satisfy the needs of the defense industrial base. These advances will necessitate a fundamental improvement in our basic understanding of microstructure evolution during processing. In order to cut development time and costs, the semiconductor industry makes extensive use of simple models of dopant implantation, and of phenomenological models of defect annealing and diffusion. However, the production of a single device often requires more than 200 processing steps, and the cumulative effects of the various steps are far too complex to be treated with these models. The lack of accurate process modeling simulators is proving to be a serious impediment to the development of next generation devices. New atomic-level models are required to describe the point defect distributions produced by the implantation process, and the defect and dopant diffusion resulting from rapid thermal annealing steps. In this LDRD project, we investigated the migration kinetics of defects and dopants in silicon both experimentally and theoretically to provide a fundamental database for use in the development of predictive process simulators. The results were then used to develop kinetic Monte Carlo simulations that, when coupled to molecular dynamics studies, could be used to study and compare the long time and length scale behavior of ion implanted silicon to the predictions of experiments. The results of these kinetic Monte Carlo simulations were validated with experimental data and then used to predict boron activation fractions during annealing of ion implanted silicon under conditions similar to those encountered in the semiconductor manufacturing environment. The success of the work and promise of the approach are reflected in the number of publication and in the fact that following completion of the project we signed a funds-in CRADA with Intel corporation and Applied Materials Corporation to continue the research.

Download or read book Surface Morphology Evolution During Low Energy Ion Bombardment of Silicon and Gallium Antimonide written by Gözde Özaydin-İnce and published by . This book was released on 2008 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Ion bombardment is a widely used technique to modify the properties of materials for technological applications. In recent years, surface evolution during ion bombardment has also attracted considerable fundamental interest because of the desire to better understand the physical processes occurring at the surface and the frequent instability of surfaces to the spontaneous formation of nanostructures during bombardment. In this research, the surface morphology evolution of Silicon(100) and Gallium Antimonide(100) during low energy Argon ion bombardment was studied using real-time grazing-incidence small angle X-ray scattering and ex-situ atomic force microscopy. The surface morphology evolution of Si during ion bombardment as a function of substrate temperature was examined. Although, the surface was amorphized during bombardment at room temperature, above approximately 400°C a transition from amorphous to crystalline structure occurred. Above 500°C, the surface remained crystalline and the growing corrugations exhibited dynamic scaling with power law growth in amplitude and characteristic length scale. The ripple formation by off normal incidence low energy ion bombardment and ripple smoothening by normal incidence ion bombardment at room temperature were studied. Using real-time X-ray scattering, an exponential growth of the intensities during ripple formation was observed confirming that the early time kinetics obeyed the Bradley-Harper model. However, at later times the growth slowed and deviated from the predictions of the linear model. Ripple smoothening experiments, on the other hand, showed that the ripple structures eroded during normal incidence ion bombardment, possibly due to an additional lateral atomic smoothening mechanism active at these incidence angles. The real-time measurements showed that the small length scales decayed faster than the large length scales as predicted by the linear model, however the decay mechanisms were more complex than expected from existing linear theory. It was observed that, although Si surfaces remained smooth during bombardment at room temperature when a small amount of Molybdenum atoms was supplied to the surface during ion bombardment, correlated structures with two different characteristic length scales developed. The shorter length scale features ("dots") coarsened with time until they reached a constant spatial wavelength. The longer length scale corrugations associated with kinetic roughening, however, continued to grow in amplitude during bombardment. The evolution of this kinetic roughening could be described by the Family-Vicsek scaling hypothesis. A new noise term associated with inhomogeneities in local relaxation was proposed to quantitatively explain the early time kinetics. In addition, in-situ wafer curvature measurements were performed during ion bombardment to study the real-time stress state of the surface. The measurements showed that initially a compressive stress developed during bombardment, likely due to amorphization of the surface. However, seeding caused a larger tensile stress to develop with further bombardment, possibly due to the formation of higher density regions around the Mo seed atoms on the surface. The effects of this large tensile stress on the surface instability and the formation of the nanodots were also examined. Simulations of existing continuum equations of surface morphology evolution during normal incidence ion bombardment at room temperature were performed to study the effects of individual terms on the surface morphology, as well as their relations with each other. It was observed that the noisy Kuramoto-Sivashinsky model could only qualitatively predict the surface evolution, but could not reproduce all of the experimental results. Finally, the morphology evolution of GaSb(100) surfaces during ion bombardment at different energies was also studied. Formation of correlated nanodots with a length scale of approximately 30 nm was observed during bombardment at room temperature without seeding.

Download or read book The Evolution of the Surface Morphology of Silicon During Aqueous Etching written by Theresa Anne Newton and published by . This book was released on 2000 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Morphological Evolution of Electrodeposits and Electrochemical Processing in ULSI Fabrication and Electrodeposition of and on Semiconductors IV written by Kazuo Kondo and published by The Electrochemical Society. This book was released on 2005 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt: Papers in this volume are from the 199th ECS Meeting, held in Washington, DC, Spring 2001. Morphology evolution encompasses electrochemical processing in ULSI fabrication, shape evolution, growth habit, and microstructure of electrodeposits. The most prominent example at present is the electrochemical deposition of copper for ULSI interconnects. Many other electrochemical processes at various stages of emergence and development hold promise for the electronics industry and beyond.

Download or read book Fabrication and Characterization in the Micro Nano Range written by Fernando A. Lasagni and published by Springer Science & Business Media. This book was released on 2011-03-23 with total page 227 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book shows an update in the field of micro/nano fabrications techniques of two and three dimensional structures as well as ultimate three dimensional characterization methods from the atom range to the micro scale. Several examples are presented showing their direct application in different technological fields such as microfluidics, photonics, biotechnology and aerospace engineering, between others. The effects of the microstructure and topography on the macroscopic properties of the studied materials are discussed, together with a detailed review of 3D imaging techniques.

Download or read book Energy and Water Development Appropriations for 1998 Department of Energy written by United States. Congress. House. Committee on Appropriations. Subcommittee on Energy and Water Development and published by . This book was released on 1997 with total page 1262 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Beam Processing of Materials and Deposition Processes of Protective Coatings written by P.L.F. Hemment and published by Newnes. This book was released on 2012-12-02 with total page 630 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing the proceedings of three symposia in the E-MRS series this book is divided into two parts. Part one is concerned with ion beam processing, a particularly powerful and versatile technology which can be used both to synthesise and modify materials, including metals, semiconductors, ceramics and dielectrics, with great precision and excellent control. Furthermore it also deals with the correlated effects in atomic and cluster ion bombardment and implantation.Part two deals with the deposition techniques, characterization and applications of advanced ceramic, metallic and polymeric coatings or thin films for surface protection against corrosion, erosion, abrasion, diffusion and for lubrication of contracting surfaces in relative motion.

Download or read book Low Energy Ion Irradiation of Materials written by Bernd Rauschenbach and published by Springer Nature. This book was released on 2022-08-19 with total page 763 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive introduction to all aspects of low-energy ion–solid interaction from basic principles to advanced applications in materials science. It features a balanced and insightful approach to the fundamentals of the low-energy ion–solid surface interaction, focusing on relevant topics such as interaction potentials, kinetics of binary collisions, ion range, radiation damages, and sputtering. Additionally, the book incorporates key updates reflecting the latest relevant results of modern research on topics such as topography evolution and thin-film deposition under ion bombardment, ion beam figuring and smoothing, generation of nanostructures, and ion beam-controlled glancing angle deposition. Filling a gap of almost 20 years of relevant research activity, this book offers a wealth of information and up-to-date results for graduate students, academic researchers, and industrial scientists working in these areas.

Download or read book Energy and Water Development Appropriations for 1997 Nuclear Regulatory Commission written by United States. Congress. House. Committee on Appropriations. Subcommittee on Energy and Water Development and published by . This book was released on 1996 with total page 1436 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Energy and Water Development Appropriations for 1997 written by United States. Congress. House. Committee on Appropriations. Subcommittee on Energy and Water Development and published by . This book was released on 1996 with total page 1464 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Radiation Effects and Ion beam Processing of Materials written by Lu-Min Wang and published by . This book was released on 2004 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt: The catastrophic effect, as well as a potentially advantageous effect, from energetic beams is the instant high-energy deposition in a local volume, down to the nanoscale, and the rapid cooling processes resulting in changes in the structure and properties of materials that are hard to achieve by other methods. The challenging balance between controlling radiation damage and enhancing material properties has intrigued materials scientists and physicists, as well as engineers in the nuclear and semiconductor industry, and caused them to work closely together for many years. As clearly demonstrated in this volume, many new technologies for creating unique functional devices with energetic particle beams are based on the fundamental study of radiation-induced defect production and evolution. Scientists and engineers working in nuclear engineering, environmental sciences and functional materials share a common language and numerous opportunities for collaboration in this truly interdisciplinary area. Exciting and promising results are presented here, including the most recent progress in fundamental understanding of radiation effects using molecular dynamic (MD) and kinetic Monte Carlo (kMC) simulations, processing of monodisperse nanoparticles by ion implantation, production of a wide variety of nanostructures with the application of focused ion beams (FIB), and creating new types of nanoscale functional devices using high-energy ion tracks. These results demonstrate the important relation between fundamental research on radiation effects and the development of new types of nanoscale functional devices using energetic particles over a wide energy range. Topics include: radiation effects in nuclear materials; ion-beam processing of nanostructures; ion-beam processing of semiconductor devices; ion-beam modification of physical properties; modeling and computer simulation of beam-solid interactions; and ion-beam-assisted deposition and surface modification.

Download or read book C H N and O in Si and Characterization and Simulation of Materials and Processes written by A. Borghesi and published by Newnes. This book was released on 2012-12-02 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.

Download or read book Energy and Water Development Appropriations for 1999 written by United States. Congress. House. Committee on Appropriations. Subcommittee on Energy and Water Development and published by . This book was released on 1998 with total page 2032 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Radiation Effects in Materials written by Waldemar Alfredo Monteiro and published by BoD – Books on Demand. This book was released on 2016-07-20 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of radiation effects has developed as a major field of materials science from the beginning, approximately 70 years ago. Its rapid development has been driven by two strong influences. The properties of the crystal defects and the materials containing them may then be studied. The types of radiation that can alter structural materials consist of neutrons, ions, electrons, gamma rays or other electromagnetic waves with different wavelengths. All of these forms of radiation have the capability to displace atoms/molecules from their lattice sites, which is the fundamental process that drives the changes in all materials. The effect of irradiation on materials is fixed in the initial event in which an energetic projectile strikes a target. The book is distributed in four sections: Ionic Materials; Biomaterials; Polymeric Materials and Metallic Materials.

Download or read book Evolution of Thin Film Morphology written by Matthew Pelliccione and published by Springer Science & Business Media. This book was released on 2008-01-29 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt: The focus of this book is on modeling and simulations used in research on the morphological evolution during film growth. The authors emphasize the detailed mathematical formulation of the problem. The book will enable readers themselves to set up a computational program to investigate specific topics of interest in thin film deposition. It will benefit those working in any discipline that requires an understanding of thin film growth processes.

Download or read book Structure Stress and Surface Evolution in Silicon Due to Ion Bombardment written by Nagarajan Kalyanasundaram and published by ProQuest. This book was released on 2007 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the first part of the work, a molecular dynamics simulation methodology using empirical interatomic potentials is developed to study argon ion bombardment of silicon. Sputtering, structure and stress evolution are studied at 500eV and 700eV beam energies. The ion beam energies considered in this work are similar to those used in both nanometer-scale surface patterning experiments and a particular microelectromechanical systems (MEMS) fabrication technique.

Download or read book Large and Middle scale Aperture Aspheric Surfaces written by Shengyi Li and published by John Wiley & Sons. This book was released on 2017-04-10 with total page 640 pages. Available in PDF, EPUB and Kindle. Book excerpt: A complete all-in-one reference to aspheric fabrication and testing for optical applications This book provides a detailed introduction to the manufacturing and measurement technologies in aspheric fabrication. For each technology, both basic theory and practical applications are introduced. The book consists of two parts. In the first part, the basic principles of manufacturing technology for aspheric surfaces and key theory for deterministic subaperture polishing of aspheric surfaces are discussed. Then key techniques for high precision figuring such as CCOS with small polishing pad, IBF and MRF, are introduced, including the basic principles, theories and applications, mathematical modeling methods, machine design and process parameter selection. It also includes engineering practices and experimental results, based on the three kinds of polishing tools (CCOS, IBF and MRF) developed by the author’s research team. In the second part, basic principles of measurement and some typical examples for large and middle-scale aspheric surfaces are discussed. Then, according to the demands of low cost, high accuracy and in-situ measurement methods in the manufacturing process, three kinds of technologies are introduced, such as the Cartesian and swing-arm polar coordinate profilometer, the sub-aperture stitching interferometer and the phase retrieval method based on diffraction principle. Some key techniques are also discussed, including the basic principles, mathematical modeling methods, machine design and process parameter selection, as well as engineering practices and experimental results. Finally, the team’s research results about subsurface quality measurement and guarantee methods are also described. This book can be used as a reference for scientists and technologists working in optical manufacturing, ultra-precision machining, precision instruments and measurement, and other precision engineering fields. A complete all-in-one reference to aspheric fabrication and testing for optical applications Presents the latest research findings from the author’s internationally recognized leading team who are at the cutting edge of the technology Brings together surface processing and measurement in one complete volume, discussing problems and solutions Guides the reader from an introductory overview through to more advanced and sophisticated techniques of metrology and manufacturing, suitable for the student and the industry professional