Download or read book Surface characteristics of etched and non etched silicon germanium SiGe Si graded structure with varying Ge concentration grown by ultra high vacuum UHV chemical vapor deposition CVD for optoelectronic and power conversion applications written by Fred Semendy and published by . This book was released on 2012 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Germanium and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevic

Download or read book SiGe Ge and Related Compounds 4 Materials Processing and Devices written by D. Harame and published by The Electrochemical Society. This book was released on 2010-10 with total page 1066 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.

Download or read book Properties of Silicon Germanium and SiGe Carbon written by Erich Kasper and published by Inst of Engineering & Technology. This book was released on 2000 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distills in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe; C, self-assembled nanostructures, quantum effects and device trends.

Download or read book Materials Science and Design for Germanium Monolithic Light Source on Silicon written by Yan Cai (Ph. D.) and published by . This book was released on 2014 with total page 197 pages. Available in PDF, EPUB and Kindle. Book excerpt: Germanium (Ge) is an optically active material with the advantages of Si-CMOS compatibility and monolithic integration. It has great potential to be used as the light emitter for Si photonics. Tensile strain and n-type doping are two key properties in Ge to achieve optical gain. This thesis mainly focuses on: (1) physical understandings of the threshold behavior of Ge-on-Si bulk laser and the temperature dependent performance; (2) process developments to grow and planarize the epitaxial Ge on Si in oxide trenches and corners; (3) introduction of n-type dopant into Ge-on-Si thin films while studying the threading dislocation behavior in n-Ge during annealing; (4) Design an external cavity Ge laser integrated with Si waveguides for a low threshold current and single mode operation. Heavy n-type doping was observed to change the Ge electronic band structure by band gap narrowing effect. We also found a failure of using a simple Drude model to explain free carrier absorption in n-Ge. We modified the optical gain simulation based on the above two observations in Ge. We found a broad gain bandwidth of ~ 200 nm from 1550 nm to 1750 nm and a higher net materials gain. We predicted a theoretical lasing threshold current density of 5~10 kA/cm2 in the bulk Ge laser device with the n-type doping of mid-1019 cm-3 at room temperature. We also predicted the Ge laser device would have better temperature stability regarding the threshold current compared to the III-V laser. Single crystalline Ge was epitaxial grown on Si in oxide trenches using ultra high vacuum chemical vapor deposition. The selective growth lead to the faceting in Ge because of the different growth rates of crystal orientations. We developed a suitable photolithography and oxide etch process to get the vertical oxide sidewall for Ge trench filling. We also tested the Ge growth in the T-shape corners to improve the reflectivity at the waveguide end. The T-shape structure was also useful for the Ge/Si waveguide coupling in the external cavity laser. Furthermore, we developed a chemical mechanical polishing (CMP) process for the over-grown Ge waveguides. The Ge CMP process was selective to oxide, flexible to change in the CMP rate by DI water dilution and controllable for a minimum dishing of Ge in the oxide trenches. N-type doping helped to increase the direct band transition in Ge for light emission. We developed a delta-doping method to grow a dopant source called "delta doping layer" on the single crystalline Ge layer without introducing extra defects. We then used rapid thermal annealing to drive the dopant into the underlying Ge layer. The dopant enhanced diffusion was discovered to speed up the drive-in process. The active n-type concentration in Ge could reach up to 5×1019 cm-3 using the delta doping source and annealing process. Since the dopant source layer had a disrupted Ge growth, we used the developed CMP process to remove it after the dopant drive-in. A comprehensive dopant diffusion simulation was developed to predict the annealing temperature and time to achieve high n-type doping and uniform distribution. We used plan-view transmission electron microscopy to examine the threading dislocation density (TDD) in n-Ge for both blanket films and trench grown waveguides. We found a high TDD of ~ 1×108cm-2 in 1 [mu]m thick blanket Ge with doping of 3×1018 cm-3 after high temperature annealing at 850 °C for 40 min. The TDD is 1×109 cm-2 in the 300 nm thick and 1 [mu]m wide Ge waveguide. We examined the effects of annealing temperature, Ge thickness, Si/Ge inter-diffusion and trench width on the threading dislocation behavior. However, we have not found the exact reason causing the high TDD and therefore, further study is required on the TDD reduction for the Ge waveguide. Finally, we designed an external cavity Ge laser using distributed Bragg reflector (DBR) gratings on Si waveguides. A detailed discussion on the cross section design was presented to mitigate the internal optical loss from claddings and metal layers and to improve the current injection uniformity across the Ge waveguide. The aim of the DBR grating design was to achieve a single mode operation by controlling the full width half maximum of the grating reflectance spectrum. We also discussed the coupling between Ge and Si waveguides and different designs were presented to increase the coupling efficiency.

Download or read book Properties of Silicon Germanium and SiGe written by Erich Kasper and published by Inst of Engineering & Technology. This book was released on 1999-12 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC, with over 20 companies planning manufacture in the near future. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distils in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe: C, self-assembled nanostructures, quantum effects and device trends. The book contains 75% more text than Prof. Kasper's earlier book Properties of strained and relaxed SiGe (INSPEC, IEE, 1995), thoroughly updates its content and adds many new topics.

Download or read book Germanium silicon Strained Layers and Heterostructures written by Suresh C. Jain and published by . This book was released on 1994 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Biaxial strain in coherent GeSi layers grown on Si substrates provides a powerful tool for tailoring bandgaps and band offsets. Extremely high electron and hole mobilities have been obtained in modulation-doped GeSi strained layer heterostructures. Ultra-high-speed Heterojunction Bipolar Transistors and MODFETs, and long wavelength (1 to 20 micrometre) IR Detectors have been fabricated using these layers. Quantum wells, ultra-thin period superlattices, and quantum dots can also be fabricated using the strained layers. These devices were previously implemented using III-V semiconductors. Now they can be fabricated using existing Si technology, which is mature and reliable. GeSi strained layer technology has made it possible to manufacture monolithic Si integrated circuits containing heterojunction devices.

Download or read book CRC Handbook of Metal Etchants written by Perrin Walker and published by CRC Press. This book was released on 1990-12-11 with total page 1434 pages. Available in PDF, EPUB and Kindle. Book excerpt: This publication presents cleaning and etching solutions, their applications, and results on inorganic materials. It is a comprehensive collection of etching and cleaning solutions in a single source. Chemical formulas are presented in one of three standard formats - general, electrolytic or ionized gas formats - to insure inclusion of all necessary operational data as shown in references that accompany each numbered formula. The book describes other applications of specific solutions, including their use on other metals or metallic compounds. Physical properties, association of natural and man-made minerals, and materials are shown in relationship to crystal structure, special processing techniques and solid state devices and assemblies fabricated. This publication also presents a number of organic materials which are widely used in handling and general processing...waxes, plastics, and lacquers for example. It is useful to individuals involved in study, development, and processing of metals and metallic compounds. It is invaluable for readers from the college level to industrial R & D and full-scale device fabrication, testing and sales. Scientific disciplines, work areas and individuals with great interest include: chemistry, physics, metallurgy, geology, solid state, ceramic and glass, research libraries, individuals dealing with chemical processing of inorganic materials, societies and schools.

Download or read book Limited area Growth of Ge and SiGe on Si written by Meekyung Kim (Ph. D.) and published by . This book was released on 2011 with total page 159 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goal of this thesis is to develop and understand processing conditions that improve the surface morphology and reduce the dislocation density in limited-area heteroepitaxy of Ge and SiGe on Si (100) substrates. Low pressure chemical vapor deposition was investigated for two limiting cases of strain states: thin, strained, high Ge content SiGe films for transistor applications, and thick, relaxed Ge films, for potential optoelectronic applications. Selective epitaxial growth of thin, high Ge-content, strained SiGe on oxide-patterned silicon was studied, specifically the effect of growth area on the critical thickness. The critical thickness of Sio.33Geo.67 formed by selective epitaxial growth in areas of 2.3 x 2.3 [mu]m was found to be 8.5 nm, which is an increase of 2x compared to the critical thickness observed for growth in large areas (i.e. for non-selective epitaxy). The sources of misfit dislocation nucleation in selective growth were analyzed, and misfit generation from the SiGe pattern edges, due to effects such as local strain concentration, Si surface shape near the oxide boundary, and preferential SiGe growth near the pattern edge were investigated. Thin, smooth Ge-on-Si films were developed and the effect of growth conditions on film morphology was examined to find an optimum temperature and pressure for smooth film surface (365 °C and 60 torr). A period of delayed epitaxial growth, or "incubation time" was observed, and a Si surface treatment technique, consisting of a short SiGe pulse, with negligible SiGe thickness, was employed to realize uniform Ge films with low surface roughness (RMS

Download or read book Single crystal Germanium Growth on Amorphous Silicon written by Kevin A. McComber and published by . This book was released on 2011 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: The integration of photonics with electronics has emerged as a leading platform for microprocessor technology and the continuation of Moore's Law. As electronic device dimensions shrink, electronic signals encounter crippling delays and heating issues such that signal transduction across large on-chip distances becomes increasingly more difficult. However, these issues may be mitigated by the use of photonic interconnects combined with electronic devices in electronic-photonic integrated circuits (EPICs). The electronics in proposed EPIC designs perform the logic operations and short-distance signal transmission, while photonic devices serve to transmit signals over longer lengths. However, the photonic devices are large compared to electronic devices, and thus the two types of devices would ideally exist on separate levels of the microprocessor stack in order to maximize the amount of silicon substrate available for electronic device fabrication. A CMOS-compatible back-end process for the fabrication of photonic devices is necessary to realize such a three-dimensional EPIC. Back-end processing is limited in thermal budget and does not present a single-crystal substrate for epitaxial growth, however, so high-quality crystal fabrication methods currently used for photonic device fabrication are not possible in back-end processing. This thesis presents a method for the fabrication of high-quality germanium single crystals using CMOS-compatible back-end processing. Initial work on the ultra-high vacuum chemical vapor deposition of polycrystalline germanium on amorphous silicon is presented. The deposition can be successfully performed by using a pre-growth hydrofluoric acid dip and by limiting the thickness of the amorphous silicon layer to less than 120 nm. Films deposited at temperatures of 350° C, 450° C, and 550° C show (110) texture, though the texture is most prevalent in growths at 450° C. Poly-Ge grown at 4500 C is successfully doped n-type in situ, and the grain size of as-grown material is enhanced by lateral growth over a barrier. Structures are fabricated for the growth of Ge confined in one dimension. The growths show faceting across large areas, in contrast to as-deposited poly-Ge, corresponding to enhanced grain sizes. Growth confinement is shown to reduce the defect density as the poly-Ge grows. When coalesced into a continuous film, the material grown from 1 D confinement exhibits a lower carrier density and lower trap density than as-deposited poly-Ge, indicating improved material quality. We measure an increased grain size from as-deposited poly-Ge to Ge grown from ID confinement. Single-crystal germanium is grown at 450° C from confinement in two dimensions. Such growths exhibit faceting across the entire crystal as well as the presence of E3 boundaries ({111} twins), with many growths showing no other boundaries. These twins mediate the growth of the crystal, as they serve as the points for heterogeneous surface nucleation of adatom clusters. The twins can form after the crystal nucleates and are strongly preferred in order to obtain appreciable crystal growth rates. We model the growths from the confining channels in order to find the optimum channel geometry for large, uniform, single-crystal growths that consistently emerge from the channel. The growths from 2D confinement show lower trap density than those from 1 D confinement, indicating a further enhancement of the crystal quality due to the increased confinement. This method of single-crystal growth from an amorphous substrate is extensible to any materials system in which selective non-epitaxial deposition is possible.

Download or read book Expanding the Optical Capabilities of Germanium in the Infrared Range Through Group IV and III V IV Alloy Systems written by Patrick Michael Wallace and published by . This book was released on 2018 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work described in this thesis explores the synthesis of new semiconductors in the Si-Ge-Sn system for application in Si-photonics. Direct gap Ge1-ySny (y=0.12-0.16) alloys with enhanced light emission and absorption are pursued. Monocrystalline layers are grown on Si platforms via epitaxy-driven reactions between Sn- and Ge-hydrides using compositionally graded buffer layers that mitigate lattice mismatch between the epilayer and Si platforms. Prototype p-i-n structures are fabricated and are found to exhibit direct gap electroluminescence and tunable absorption edges between 2200 and 2700 nm indicating applications in LEDs and detectors. Additionally, a low pressure technique is described producing pseudomorphic Ge1-ySny alloys in the compositional range y=0.06-0.17. Synthesis of these materials is achieved at ultra-low temperatures resulting in nearly defect-free films that far exceed the critical thicknesses predicted by thermodynamic considerations, and provide a chemically driven route toward materials with properties typically associated with molecular beam epitaxy. Silicon incorporation into Ge1-ySny yields a new class of Ge1-x-ySixSny (y>x) ternary alloys using reactions between Ge3H8, Si4H10, and SnD4. These materials contain small amounts of Si (x=0.05-0.08) and Sn contents of y=0.1-0.15. Photoluminescence studies indicate an intensity enhancement relative to materials with lower Sn contents (y=0.05-0.09). These materials may serve as thermally robust alternatives to Ge1-ySny for mid-infrared (IR) optoelectronic applications. An extension of the above work is the discovery of a new class of Ge-like Group III-V-IV hybrids with compositions Ga(As1–xPx)Ge3 (x=0.01-0.90) and (GaP)yGe5–2y related to Ge1-x-ySixSny in structure and properties. These materials are prepared by chemical vapor deposition of reactive Ga-hydrides with P(GeH3)3 and As(GeH3)3 custom precursors as the sources of P, As, and Ge incorporating isolated GaAs and GaP donor-acceptor pairs into diamond-like Ge-based structures. Photoluminescence studies reveal bandgaps in the near-IR and large bowing of the optical behavior relative to linear interpolation of the III-V and Ge end members. Similar materials in the Al-Sb-B-P system are also prepared and characterized. The common theme of the above topics is the design and fabrication of new optoelectronic materials that can be fully compatible with Si-based technologies for expanding the optoelectronic capabilities of Ge into the mid-IR and beyond through compositional tuning of the diamond lattice.

Download or read book Wafer Bonding written by Marin Alexe and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.

Download or read book Advances in Optical Fiber Technology written by Moh Yasin and published by BoD – Books on Demand. This book was released on 2015-02-25 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a compilation of works presenting recent developments and practical applications in optical fiber technology. It contains 13 chapters from various institutions that represent global research in various topics such as scattering, dispersion, polarization interference, fuse phenomena and optical manipulation, optical fiber laser and sensor applications, passive optical network (PON) and plastic optical fiber (POF) technology. It provides the reader with a broad overview and sampling of the innovative research on optical fiber technologies.

Download or read book Silicon Photonics II written by David J. Lockwood and published by Springer Science & Business Media. This book was released on 2010-10-13 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is volume II of a series of books on silicon photonics. It gives a fascinating picture of the state-of-the-art in silicon photonics from a component perspective. It presents a perspective on what can be expected in the near future. It is formed from a selected number of reviews authored by world leaders in the field, and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of micro- and nanophotonics and optoelectronics.

Download or read book Handbook of Chemical Vapor Deposition written by Hugh O. Pierson and published by William Andrew. This book was released on 1999-09-01 with total page 507 pages. Available in PDF, EPUB and Kindle. Book excerpt: Turn to this new second edition for an understanding of the latest advances in the chemical vapor deposition (CVD) process. CVD technology has recently grown at a rapid rate, and the number and scope of its applications and their impact on the market have increased considerably. The market is now estimated to be at least double that of a mere seven years ago when the first edition of this book was published. The second edition is an update with a considerably expanded and revised scope. Plasma CVD and metallo-organic CVD are two major factors in this rapid growth. Readers will find the latest data on both processes in this volume. Likewise, the book explains the growing importance of CVD in production of semiconductor and related applications.

Download or read book Kelvin Probe Force Microscopy written by Sascha Sadewasser and published by Springer Science & Business Media. This book was released on 2011-10-22 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the nearly 20 years of Kelvin probe force microscopy, an increasing interest in the technique and its applications has developed. This book gives a concise introduction into the method and describes various experimental techniques. Surface potential studies on semiconductor materials, nanostructures and devices are described, as well as application to molecular and organic materials. The current state of surface potential at the atomic scale is also considered. This book presents an excellent introduction for the newcomer to this field, as much as a valuable resource for the expert.

Download or read book 2D Monoelemental Materials Xenes and Related Technologies written by Zongyu Huang and published by CRC Press. This book was released on 2022-04-19 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: Monoelemental 2D materials called Xenes have a graphene-like structure, intra-layer covalent bond, and weak van der Waals forces between layers. Materials composed of different groups of elements have different structures and rich properties, making Xenes materials a potential candidate for the next generation of 2D materials. 2D Monoelemental Materials (Xenes) and Related Technologies: Beyond Graphene describes the structure, properties, and applications of Xenes by classification and section. The first section covers the structure and classification of single-element 2D materials, according to the different main groups of monoelemental materials of different components and includes the properties and applications with detailed description. The second section discusses the structure, properties, and applications of advanced 2D Xenes materials, which are composed of heterogeneous structures, produced by defects, and regulated by the field. Features include: Systematically detailed single element materials according to the main groups of the constituent elements Classification of the most effective and widely studied 2D Xenes materials Expounding upon changes in properties and improvements in applications by different regulation mechanisms Discussion of the significance of 2D single-element materials where structural characteristics are closely combined with different preparation methods and the relevant theoretical properties complement each other with practical applications Aimed at researchers and advanced students in materials science and engineering, this book offers a broad view of current knowledge in the emerging and promising field of 2D monoelemental materials.