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Book Substrate Current Modeling for High Temperature Smart Power BCD Technology

Download or read book Substrate Current Modeling for High Temperature Smart Power BCD Technology written by Fabrizio Lo Conte and published by . This book was released on 2012 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Latchup

    Book Details:
  • Author : Steven H. Voldman
  • Publisher : John Wiley & Sons
  • Release : 2008-04-15
  • ISBN : 9780470516164
  • Pages : 472 pages

Download or read book Latchup written by Steven H. Voldman and published by John Wiley & Sons. This book was released on 2008-04-15 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Interest in latchup is being renewed with the evolution of complimentary metal-oxide semiconductor (CMOS) technology, metal-oxide-semiconductor field-effect transistor (MOSFET) scaling, and high-level system-on-chip (SOC) integration. Clear methodologies that grant protection from latchup, with insight into the physics, technology and circuit issues involved, are in increasing demand. This book describes CMOS and BiCMOS semiconductor technology and their sensitivity to present day latchup phenomena, from basic over-voltage and over-current conditions, single event latchup (SEL) and cable discharge events (CDE), to latchup domino phenomena. It contains chapters focusing on bipolar physics, latchup theory, latchup and guard ring characterization structures, characterization testing, product level test systems, product level testing and experimental results. Discussions on state-of-the-art semiconductor processes, design layout, and circuit level and system level latchup solutions are also included, as well as: latchup semiconductor process solutions for both CMOS to BiCMOS, such as shallow trench, deep trench, retrograde wells, connecting implants, sub-collectors, heavily-doped buried layers, and buried grids – from single- to triple-well CMOS; practical latchup design methods, automated and bench-level latchup testing methods and techniques, latchup theory of logarithm resistance space, generalized alpha (a) space, beta (b) space, new latchup design methods– connecting the theoretical to the practical analysis, and; examples of latchup computer aided design (CAD) methodologies, from design rule checking (DRC) and logical-to-physical design, to new latchup CAD methodologies that address latchup for internal and external latchup on a local as well as global design level. Latchup acts as a companion text to the author’s series of books on ESD (electrostatic discharge) protection, serving as an invaluable reference for the professional semiconductor chip and system-level ESD engineer. Semiconductor device, process and circuit designers, and quality, reliability and failure analysis engineers will find it informative on the issues that confront modern CMOS technology. Practitioners in the automotive and aerospace industries will also find it useful. In addition, its academic treatment will appeal to both senior and graduate students with interests in semiconductor process, device physics, computer aided design and design integration.

Book Silicon Analog Components

Download or read book Silicon Analog Components written by Badih El-Kareh and published by Springer. This book was released on 2019-08-07 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Based on the authors’ extensive experience in the development of analog devices, this book is intended for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science. Enables engineers to understand analog device physics, and discusses important relations between process integration, device design, component characteristics, and reliability; Describes in step-by-step fashion the components that are used in analog designs, the particular characteristics of analog components, while comparing them to digital applications; Explains the second-order effects in analog devices, and trade-offs between these effects when designing components and developing an integrated process for their manufacturing.

Book Fundamentals of Layout Design for Electronic Circuits

Download or read book Fundamentals of Layout Design for Electronic Circuits written by Jens Lienig and published by Springer Nature. This book was released on 2020-03-19 with total page 319 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the fundamental knowledge of layout design from the ground up, addressing both physical design, as generally applied to digital circuits, and analog layout. Such knowledge provides the critical awareness and insights a layout designer must possess to convert a structural description produced during circuit design into the physical layout used for IC/PCB fabrication. The book introduces the technological know-how to transform silicon into functional devices, to understand the technology for which a layout is targeted (Chap. 2). Using this core technology knowledge as the foundation, subsequent chapters delve deeper into specific constraints and aspects of physical design, such as interfaces, design rules and libraries (Chap. 3), design flows and models (Chap. 4), design steps (Chap. 5), analog design specifics (Chap. 6), and finally reliability measures (Chap. 7). Besides serving as a textbook for engineering students, this book is a foundational reference for today’s circuit designers. For Slides and Other Information: https://www.ifte.de/books/pd/index.html

Book ESD

    ESD

    Book Details:
  • Author : Steven H. Voldman
  • Publisher : John Wiley & Sons
  • Release : 2009-07-01
  • ISBN : 0470747269
  • Pages : 411 pages

Download or read book ESD written by Steven H. Voldman and published by John Wiley & Sons. This book was released on 2009-07-01 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electrostatic discharge (ESD) failure mechanisms continue to impact semiconductor components and systems as technologies scale from micro- to nano-electronics. This book studies electrical overstress, ESD, and latchup from a failure analysis and case-study approach. It provides a clear insight into the physics of failure from a generalist perspective, followed by investigation of failure mechanisms in specific technologies, circuits, and systems. The book is unique in covering both the failure mechanism and the practical solutions to fix the problem from either a technology or circuit methodology. Look inside for extensive coverage on: failure analysis tools, EOS and ESD failure sources and failure models of semiconductor technology, and how to use failure analysis to design more robust semiconductor components and systems; electro-thermal models and technologies; the state-of-the-art technologies discussed include CMOS, BiCMOS, silicon on insulator (SOI), bipolar technology, high voltage CMOS (HVCMOS), RF CMOS, smart power, gallium arsenide (GaAs), gallium nitride (GaN), magneto-resistive (MR) , giant magneto-resistors (GMR), tunneling magneto-resistor (TMR), devices; micro electro-mechanical (MEM) systems, and photo-masks and reticles; practical methods to use failure analysis for the understanding of ESD circuit operation, temperature analysis, power distribution, ground rule development, internal bus distribution, current path analysis, quality metrics, (connecting the theoretical to the practical analysis); the failure of each key element of a technology from passives, active elements to the circuit, sub-system to package, highlighted by case studies of the elements, circuits and system-on-chip (SOC) in today’s products. ESD: Failure Mechanisms and Models is a continuation of the author’s series of books on ESD protection. It is an essential reference and a useful insight into the issues that confront modern technology as we enter the Nano-electronic era.

Book Science Abstracts

Download or read book Science Abstracts written by and published by . This book was released on 1993 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book POWER HVMOS Devices Compact Modeling

Download or read book POWER HVMOS Devices Compact Modeling written by Wladyslaw Grabinski and published by Springer Science & Business Media. This book was released on 2010-07-20 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor power electronics plays a dominant role due its increased efficiency and high reliability in various domains including the medium and high electrical drives, automotive and aircraft applications, electrical power conversion, etc. Power/HVMOS Devices Compact Modeling will cover very extensive range of topics related to the development and characterization power/high voltage (HV) semiconductor technologies as well as modeling and simulations of the power/HV devices and smart power integrated circuits (ICs). Emphasis is placed on the practical applications of the advanced semiconductor technologies and the device level compact/spice modeling. This book is intended to provide reference information by selected, leading authorities in their domain of expertise. They are representing both academia and industry. All of them have been chosen because of their intimate knowledge of their subjects as well as their ability to present them in an easily understandable manner.

Book Electrical   Electronics Abstracts

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1989 with total page 1722 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Chemical Abstracts

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Smart Power ICs

    Book Details:
  • Author : Bruno Murari
  • Publisher : Springer Science & Business Media
  • Release : 2002-06-13
  • ISBN : 9783540432388
  • Pages : 598 pages

Download or read book Smart Power ICs written by Bruno Murari and published by Springer Science & Business Media. This book was released on 2002-06-13 with total page 598 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a survey of the state of the art of technology and future trends in the new family of Smart Power ICs and describes design and applications in a variety of fields ranging from automotive to telecommunications, reliability evaluation and qualification procedures. The book is a valuable source of information and reference for both power IC design specialists and to all those concerned with applications, the development of digital circuits and with system architecture.

Book Wide Bandgap Based Devices

Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by MDPI. This book was released on 2021-05-26 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices

Book Transistor Level Modeling for Analog RF IC Design

Download or read book Transistor Level Modeling for Analog RF IC Design written by Wladyslaw Grabinski and published by Springer Science & Business Media. This book was released on 2006-07-01 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.

Book Physical Limitations of Semiconductor Devices

Download or read book Physical Limitations of Semiconductor Devices written by Vladislav A. Vashchenko and published by Springer Science & Business Media. This book was released on 2008-03-22 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: Providing an important link between the theoretical knowledge in the field of non-linier physics and practical application problems in microelectronics, the purpose of the book is popularization of the physical approach for reliability assurance. Another unique aspect of the book is the coverage given to the role of local structural defects, their mathematical description, and their impact on the reliability of the semiconductor devices.

Book Designing Analog Chips

Download or read book Designing Analog Chips written by Hans Camenzind and published by Virtualbookworm Publishing. This book was released on 2005 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction to CMOS and bipolar analog IC design. The book presumes no prior knowledge of linear design, making it comprehensible to engineers with a non-analog back-ground. The emphasis is on practical design, covering the entire field with hundreds of examples to explain the choices. Concepts are presented following the history of their discovery. Content: 1. Devices Semiconductors, The Bipolar Transistor, The Integrated Circuit, Integrated NPN Transistors, The Case of the Lateral PNP Transistor, CMOS Transistors, The Substrate PNP Transistor, Diodes, Zener Diodes, Resistors, Capacitors, CMOS vs. Bipolar; 2. Simulation, DC Analysis, AC Analysis, Transient Analysis, Variations, Models, Diode Model, Bipolar Transis-tor Model, Model for the Lateral PNP Transistor, MOS Transistor Models, Resistor Models, Models for Capacitors; 3. Current Mirrors; 4. Differential Pairs; 5. Current Sources; 6. Time Out: Analog Measures, dB, RMS, Noise, Fourier Analysis, Distortion, Frequency Compensation; 7. Bandgap References; 8. Op Amps; 9. Comparators; 10. Transimpedance Amplifiers; 11. Timers and Oscillators; 12. Phase-Locked Loops; 13. Filters; 14. Power, Linear Regulators, Low Drop-Out Regulators, Switching Regulators, Linear Power Amplifiers, Switching Power Am-plifiers; 15. A to D and D to A, The Delta-Sigma Converter; 16. Odds and Ends, Gilbert Cell, Multipliers, Peak Detectors, Rectifiers and Averaging Circuits, Thermometers, Zero-Crossing Detectors; 17. Layout.

Book Electronic Systems and Applications

Download or read book Electronic Systems and Applications written by R. P Agarwal and published by Allied Publishers. This book was released on 1994 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt: