Download or read book Study of Process Effects and Bias Stress Stability on Amorphous Indium Gallium Zinc Oxide Thin Film Transistor written by and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study of Environment Effects and Bias Illumination Stability for Amorphous Indium gallium Zinc oxide Thin Film Transistors written by Iue-Hen Li and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Amorphous Oxide Semiconductors written by Hideo Hosono and published by John Wiley & Sons. This book was released on 2022-05-31 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt: AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.
Download or read book On the Reversible Effects of Bias stress Applied to Amorphous Indium gallium zinc oxide Thin Film Transistors written by Anish Suresh Bharadwaj and published by . This book was released on 2018 with total page 52 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The role of amorphous IGZO (Indium Gallium Zinc Oxide) in Thin Film Transistors (TFT) has found its application in emerging display technologies such as active matrix liquid crystal display (LCD) and active matrix organic light-emitting diode (AMOLED) due to factors such as high mobility 10-20 cm2/(V.s), low subthreshold swing (~120mV/dec), overall material stability and ease of fabrication. However, prolonged application of gate bias on the TFT results in deterioration of I-V characteristics such as sub-threshold distortion and a distinct shift in threshold voltage. Both positive-bias and negative-bias affects have been investigated. In most cases positive-stress was found to have negligible influence on device characteristics, however a stress induced trap state was evident in certain cases. Negative stress demonstrated a pronounced influence by donor like interface traps, with significant transfer characteristics shift that was reversible over a period of time at room temperature. It was also found that the reversible mechanism to pre-stress conditions was accelerated when samples were subjected to cryogenic temperature (77 K). To improve device performance BG devices were subjected to extended anneals and encapsulated with ALD alumina. These devices were found to have excellent resistance to bias stress. Double gate devices that were subjected to extended anneals and alumina capping revealed similar results with better electrostatics compared to BG devices. The cause and effect of bias stress and its reversible mechanisms on IGZO TFTs has been studied and explained with supporting models."--Abstract.
Download or read book Thin Film Transistors 12 TFT 12 written by Y. Kuo and published by The Electrochemical Society. This book was released on 2014 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thin Film Transistors 10 TFT 10 written by Y. Kuo and published by The Electrochemical Society. This book was released on 2010-10 with total page 443 pages. Available in PDF, EPUB and Kindle. Book excerpt: This special issue of ECS Transactions is for the 20th anniversary of the Thin Film Transistor (TFT) symposium series. Renowned TFT experts in related materials, processes, devices, and applications from the world serve as invited speakers to review the technology and science progress in the past two decades. Selected contributed papers are also included in this issue.
Download or read book Post Processing Treatment of InGaZnO Thin Film Transistors for Improved Bias illumination Stress Reliability written by Muhammad Ruhul Hasin and published by . This book was released on 2013 with total page 65 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis work mainly examined the stability and reliability issues of amorphous Indium Gallium Zinc Oxide (a-IGZO) thin film transistors under bias-illumination stress. Amorphous hydrogenated silicon has been the dominating material used in thin film transistors as a channel layer. However with the advent of modern high performance display technologies, it is required to have devices with better current carrying capability and better reproducibility. This brings the idea of new material for channel layer of these devices. Researchers have tried poly silicon materials, organic materials and amorphous mixed oxide materials as a replacement to conventional amorphous silicon layer. Due to its low price and easy manufacturing process, amorphous mixed oxide thin film transistors have become a viable option to replace the conventional ones in order to achieve high performance display circuits. But with new materials emerging, comes the challenge of reliability and stability issues associated with it. Performance measurement under bias stress and bias-illumination stress have been reported previously. This work proposes novel post processing low temperature long time annealing in optimum ambient in order to annihilate or reduce the defects and vacancies associated with amorphous material which lead to the instability or even the failure of the devices. Thin film transistors of a-IGZO has been tested for standalone illumination stress and bias-illumination stress before and after annealing. HP 4155B semiconductor parameter analyzer has been used to stress the devices and measure the output characteristics and transfer characteristics of the devices. Extra attention has been given about the effect of forming gas annealing on a-IGZO thin film. a-IGZO thin film deposited on silicon substrate has been tested for resistivity, mobility and carrier concentration before and after annealing in various ambient. Elastic Recoil Detection has been performed on the films to measure the amount of hydrogen atoms present in the film. Moreover, the circuit parameters of the thin film transistors has been extracted to verify the physical phenomenon responsible for the instability and failure of the devices. Parameters like channel resistance, carrier mobility, power factor has been extracted and variation of these parameters has been observed before and after the stress.
Download or read book Transparent Oxide Electronics written by Pedro Barquinha and published by John Wiley & Sons. This book was released on 2012-04-09 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transparent electronics is emerging as one of the most promising technologies for the next generation of electronic products, away from the traditional silicon technology. It is essential for touch display panels, solar cells, LEDs and antistatic coatings. The book describes the concept of transparent electronics, passive and active oxide semiconductors, multicomponent dielectrics and their importance for a new era of novel electronic materials and products. This is followed by a short history of transistors, and how oxides have revolutionized this field. It concludes with a glance at low-cost, disposable and lightweight devices for the next generation of ergonomic and functional discrete devices. Chapters cover: Properties and applications of n-type oxide semiconductors P-type conductors and semiconductors, including copper oxide and tin monoxide Low-temperature processed dielectrics n and p-type thin film transistors (TFTs) – structure, physics and brief history Paper electronics – Paper transistors, paper memories and paper batteries Applications of oxide TFTs – transparent circuits, active matrices for displays and biosensors Written by a team of renowned world experts, Transparent Oxide Electronics: From Materials to Devices gives an overview of the world of transparent electronics, and showcases groundbreaking work on paper transistors
Download or read book Functional Metal Oxides written by Satishchandra Balkrishna Ogale and published by John Wiley & Sons. This book was released on 2013-11-08 with total page 478 pages. Available in PDF, EPUB and Kindle. Book excerpt: Functional oxides are used both as insulators and metallic conductors in key applications across all industrial sectors. This makes them attractive candidates in modern technology ? they make solar cells cheaper, computers more efficient and medical instrumentation more sensitive. Based on recent research, experts in the field describe novel materials, their properties and applications for energy systems, semiconductors, electronics, catalysts and thin films. This monograph is divided into 6 parts which allows the reader to find their topic of interest quickly and efficiently. * Magnetic Oxides * Dopants, Defects and Ferromagnetism in Metal Oxides * Ferroelectrics * Multiferroics * Interfaces and Magnetism * Devices and Applications This book is a valuable asset to materials scientists, solid state chemists, solid state physicists, as well as engineers in the electric and automotive industries.
Download or read book Nanoliquid Processes for Electronic Devices written by Tatsuya Shimoda and published by Springer. This book was released on 2019-02-05 with total page 594 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes the results of the research on how to make small electronic devices with high properties by using simple liquid processes such as coating, self-assembling and printing, especially focusing on devices composed of silicon and oxide materials. It describes syntheses and analyses of solution materials, formations of solid thin films from solutions, newly developed patterning methods to make devices, and characterization of the developed devices. In the first part of the book, the research on liquid silicon (Si) materials is described. Because the use of a liquid material is a quite new idea for Si devices, this book is the first one to describe liquid Si materials for electronic devices. Si devices as typified by MOS-FET have been produced by using solid and gas materials. This volume precisely describes a series of processes from material synthesis to device fabrication for those who are interested and are/will be engaged in liquid Si-related work. In the latter part of the book, a general method of how to make good oxide films from solutions and a new imprinting method to make nanosized patterns are introduced. For making oxide films with high quality, the designing of the solution is crucial. If a solution is designed properly, a gel material called "cluster gel" can be formed which is able to be imprinted to form nanosized patterns. The anticipated readers of this book are researchers, engineers, and students who are interested in solution and printing processes for making devices. More generally, this book will also provide guidelines for corporate managers and executives who are responsible for making strategies for future manufacturing processes.
Download or read book Stabilization of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors by a Passivation Layer written by and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Composition Engineering for Solution Processed Gallium Rich Indium Gallium Zinc Oxide Thin Film Transistors written by Isaac Caleb Wang and published by . This book was released on 2018 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal oxides have risen to prominence in recent years as a promising active layer for thin film transistors (TFTs). One of the main reasons for this has been its value in display technology. Conventionally, displays have relied on amorphous hydrogenated silicon (a-Si:H) TFTs but the demand for large area displays with high resolution, fast response time, low power consumption and compatibility with integrated driving circuits have prompted research into other semiconducting materials. As a result, metal oxides have become major prospects to replace a-Si:H with their high-performance electrical characteristics and simplicity of processing, making them valuable switching elements in display technology. Particularly, quaternary metal oxides such as the amorphous Indium-Gallium-Zinc-Oxide (IGZO) have demonstrated extremely high performances as TFTs, prompting extensive research in the field. The conventional method of producing metal oxide thin films has been through vacuum deposition methods such as sputtering. However, for large area applications these vacuum deposition methods face inherent limitations which prevent easy application and device fabrication. Facing these restrictions, solution-processing has become a popularly researched alternative in producing metal oxide thin films due to their simple processing requirements, low cost, and ability to be applied over large areas. In solution-processed IGZO, there have been a couple approaches to improve device performance and stability as well as simplify processing. In this work, we produce a gallium-rich 2:2:1 IGZO TFT using solution processes and study its electrical characteristics and stability. In this paper, we demonstrate a working solution-processed gallium-rich 2:2:1 IGZO TFT and compare it to a solution-processed indium-rich device to quantify its stability and performance. Through this work, we show that solution-processing is a viable fabrication method for gallium-rich IGZO, which can be a high-stability alternative to other compositions of IGZO devices.
Download or read book Physics and Technology of Crystalline Oxide Semiconductor CAAC IGZO written by Shunpei Yamazaki and published by John Wiley & Sons. This book was released on 2016-12-27 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits. The applications include Non-volatile Oxide Semiconductor Random Access Memory (NOSRAM), Dynamic Oxide Semiconductor Random Access Memory (DOSRAM), central processing unit (CPU), field-programmable gate array (FPGA), image sensors, and etc. The book also covers the device physics (e.g., off-state characteristics) of the CAAC-IGZO field effect transistors (FETs) and process technology for a hybrid structure of CAAC-IGZO and Si FETs. It explains an extremely low off-state current technology utilized in the LSI circuits, demonstrating reduced power consumption in LSI prototypes fabricated by the hybrid process. A further two books in the series will describe the fundamentals; and the specific application of CAAC-IGZO to LCD and OLED displays. Key features: • Outlines the physics and characteristics of CAAC-IGZO FETs that contribute to favorable operations of LSI devices. • Explains the application of CAAC-IGZO to LSI devices, highlighting attributes including low off-state current, low power consumption, and excellent charge retention. • Describes the NOSRAM, DOSRAM, CPU, FPGA, image sensors, and etc., referring to prototype chips fabricated by a hybrid process of CAAC-IGZO and Si FETs.
Download or read book Study on Improving the Stability of Amorphous Indium Zinc Tin Oxide Semiconductor Thin Film Transistor with Gallium Doped written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Stability of Igzo Based Thin Film Transistor written by Ken Hoshino and published by LAP Lambert Academic Publishing. This book was released on 2010-09 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt: Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this book is to provide detailed assessments of device stability, temperature dependence, and related phenomena for IGZO- based TFTs processed at temperatures between 200 °C and 300 °C.
Download or read book Amorphous Oxide Semiconductors written by Hideo Hosono and published by John Wiley & Sons. This book was released on 2022-05-17 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt: AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.
