Download or read book Study of Novel Nano Scale Junctionless Fin Field Effect Transistors for 3D IC Applications written by 埕雅琪 and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Study of Novel Nano Scale Multi Gate Junctionless Field Effect Transistors written by and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nanoscale Field Effect Transistors Emerging Applications written by Ekta Goel, Archana Pandey and published by Bentham Science Publishers. This book was released on 2023-12-20 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale Field Effect Transistors: Emerging Applications is a comprehensive guide to understanding, simulating, and applying nanotechnology for design and development of specialized transistors. This book provides in-depth information on the modeling, simulation, characterization, and fabrication of semiconductor FET transistors. The book contents are structured into chapters that explain concepts with simple language and scientific references. The core of the book revolves around the fundamental physics that underlie the design of solid-state nanostructures and the optimization of these nanoscale devices for real-time applications. Readers will learn how to achieve superior performance in terms of reduced size and weight, enhanced subthreshold characteristics, improved switching efficiency, and minimal power consumption. Key Features: Quick summaries: Each chapter provides an introduction and summary to explain concepts in a concise manner. In-Depth Analysis: This book provides an extensive exploration of the theory and practice of nanoscale materials and devices, offering a detailed understanding of the technical aspects of Nano electronic FET transistors. Multidisciplinary Approach: It discusses various aspects of nanoscale materials and devices for applications such as quantum computation, biomedical applications, energy generation and storage, environmental protection, and more. It showcases how nanoscale FET devices are reshaping multiple industries. References: Chapters include references that encourage advanced readers to further explore key topics. Designed for a diverse audience, this book caters to students, academics and advanced readers interested in learning about Nano FET devices. Readership Students, academics and advanced readers

Download or read book Nanowire Field Effect Transistors Principles and Applications written by Dae Mann Kim and published by Springer Science & Business Media. This book was released on 2013-10-23 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.

Download or read book Nanoscale Effects in Junctionless Field Effect Transistors written by Abdussamad Ahmed Muntahi and published by . This book was released on 2018 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: Though the concept of junctionless field effect transistor (JLFET) is old, it was not possible to fabricate a useful JLFET device, as it requires a very shallow channel region. Very recently, the emergence of new and advanced technologies has made it possible to create viable JLFET devices using nanowires. This work aims to computationally investigate the interplay of quantum size-quantization and random dopant fluctuations (RDF) effects in nanoscale JLFETs. For this purpose, a 3-D fully atomistic quantum-corrected Monte Carlo device simulator has been integrated and used in this work. The size-quantization effect has been accounted for via a parameter-free effective potential scheme and benchmarked against the NEGF approach in the ballistic limit. To study the RDF effects and treat full Coulomb (electron-ion and electron-electron) interactions in the real-space and beyond the Poisson picture, the simulator implements a corrected-Coulomb electron dynamics (QC-ED) approach. The essential bandstructure and scattering parameters (energy bandgap, effective masses, and the density-of-states) have been computed using an atomistic 20-band nearest-neighbour sp 3d5s* tight-binding scheme. First, an experimental device was simulated to evaluate the validity of the simulator. Because of the small dimension, quantum mechanical confinement was found to be the dominant mechanism that significantly degrades the current drive capability of nanoscale JLFETs. Surface roughness scattering is not as prominent as observed in conventional MOSFETs. Also, because of its small size, the performance of the device is prone to the effect of variability, for which a discrete doping model was proved essential. Finally, a new JLFET was designed and optimized in this work. The proposed device is based on a gate-all-around silicon nanowire. Source/drain length is 32.5 nm and channel length is 14 nm. Gate contact length is 9 nm. The EOT (equivalent oxide thickness) is 1 nm. It has a metal gate with a workfunction of 4.55 eV. The source, channel and drain regions are n-type with a doping density of 1.5×1019 cm-3. Detailed simulation shows that the two most influential mechanisms that degrade the drive capability are quantum mechanical confinement and Coulomb scattering. Surface roughness scattering is found to be very weak. In addition, thinner nanowire is more prone to Coulomb scattering exhibiting a reduced ON-current (ION). Simulation results show that silicon nanowires with a side length (width and depth) of 3 nm and a doping density of 1.5×1019 cm-3 produce satisfactory drive current.

Download or read book Simulation and Modeling of Emerging Devices written by Brinda Bhowmick and published by . This book was released on 2023-07 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the physical principles, modelling, fabrication and applications of Tunnel Field Effect Transistors (TFETs) and Fin Field Effect Transistors (FinFETs). This is intended to act as a reference for undergraduate, postgraduate and research scholars belonging to backgrounds of Applied Physics, Electrical and Electronics Engineering and Material Science. Of paramount importance is the need to understand the simulation aspects of these devices, the validity of mathematical models, basics on fabrication and details of applications of these nanoscale devices. The presentation of the book assumes that the reader has fundamental concepts of semiconductor device physics and electronic circuits. A course such as the one this book is intended to accompany and motivate both students and scholars to get involved in the research on TFETs and FinFETs. Further, this book can act as a reference for device engineers and scientists who need to get updated information on device and technological developments.

Download or read book Theory and Simulation of Novel Low power Nanotransistors written by Raphaël Prentki and published by . This book was released on 2022 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: "Moore's law predicts an exponential growth of the number of transistors on integrated circuits (ICs). Transistors are now being downscaled to nanometric dimensions, making it increasingly difficult to maintain their power consumption at an acceptable level. Indeed, thermodynamics and electrostatics set a lower bound for the subthreshold swing (STS) of the industry-standard silicon fin field-effect transistor (FinFET) and, in turn, the power supply voltage of FinFET-based ICs. To resolve this power dissipation problem, the semiconductor industry will need to adopt transistors with novel channel materials, gate geometries, and/or charge transport mechanisms. Low-dimensional materials, such as silicon nanowires (NWs), are required for gate-all-around (GAA) field-effect transistors (FETs) and improved device electrostatics. The tunnel field-effect transistor (TFET) harnesses band-to-band tunnelling to achieve low STS. In this thesis, through various analytical and numerical tools of electrostatics, solid-state physics, as well as quantum and statistical mechanics, I investigate the nanoscale device physics of these novel transistors and propose potential solutions to the power dissipation problem. Low-dimensional semiconductors exhibit weak screening, which is detrimental to the performance and scalability of nanotransistors. Typically, screening in semiconductors is strengthened by chemical doping. However, semiconductor doping is limited by such practical concerns as bandgap narrowing and solid solubility limits of dopants. To resolve this issue, I introduce bound-charge engineering (BCE), a novel and relatively simple scheme where a surface bound charge is engineered on the interface between a semiconductor and a neighbouring oxide to strengthen screening. I establish BCE by basic electrostatics; BCE is thus widely applicable to emerging materials and novel devices, in principle. For FET applications, several oxides should be used in conjunction: a low-permittivity spacer oxide for strong screening and a high-permittivity gate oxide for high gate control. I substantiate the BCE scheme by atomistic quantum transport simulations based on the nonequilibrium Green's function (NEGF) formalism and the tight-binding (TB) model. In silicon NW TFETs, I demonstrate that BCE increases the on-state current by orders of magnitude, and the combination of oxides yields minimal STS. This enables the practical application of TFETs at higher clock frequency and lower power supply voltage, paving a way toward improved low-power transistors. To expand our understanding of BCE qualitatively and quantitatively, I derive an analytical surface potential model for cylindrical GAA BCE-assisted silicon NW FETs with arbitrary and possibly distinct spacer and gate oxides. This model is based on scaling theory and verified against NEGF-TB simulations; it provides an intuitive formalism for developing and modelling devices with BCE. Finally, I apply BCE to reduce direct source-to-drain tunnelling (DSDT) leakage in very short-channel FETs; DSDT is generally understood to set the ultimate scaling limit of FETs. Supported by NEGF-TB simulations and the surface potential model, I demonstrate that BCE can reduce DSDT down to acceptable levels in FETs with channel lengths as small as 1.5 nm, thereby paving a way toward ultra-scaled FETs"--

Download or read book Fundamentals of Nanoscaled Field Effect Transistors written by Amit Chaudhry and published by Springer. This book was released on 2016-08-23 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

Download or read book A Study on Junctionless Nanowire Field Effect Transistors written by Tien-Sheng Chao and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Negative Capacitance Field Effect Transistors written by Young Suh Song and published by . This book was released on 2023-08 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable device, wireless communication, sensor, and circuit domains. . Negative Capacitance Field Effect Transistor: Physics, Design, Modeling and Applications, discusses low-power semiconductor technology and addresses state-of-art techniques such as negative-capacitance field-effect transistors and tunnel field-effect transistors. The book is broken up into four parts. Part one discusses foundations of low-power electronics including the challenges and demands and concepts like subthreshold swing. Part two discusses the basic operations of negative-capacitance field-effect transistor (NC-FET) and Tunnel Field-effect Transistor (TFET). Part three covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be one-stop guidebook for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices like NC-FET, FinFET, Tunnel FET, and device-circuit codesign.

Download or read book 3D IC Applicable Fin Field Effect Transistor and Nonvolatile Memory written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Junctionless Field Effect Transistors written by Shubham Sahay and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Temperature Electronics written by Edmundo A. Gutierrez-D and published by Elsevier. This book was released on 2000-10-25 with total page 986 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low Temperature Electronics: Physics, Devices, Circuits, and Applications summarizes the recent advances in cryoelectronics starting from the fundamentals in physics and semiconductor devices to electronic systems, hybrid superconductor-semiconductor technologies, photonic devices, cryocoolers and thermal management. Furthermore, this book provides an exploration of the currently available theory, research, and technologies related to cryoelectronics, including treatment of the solid state physical properties of the materials used in these systems. Current applications are found in infrared systems, satellite communications and medical equipment. There are opportunities to expand in newer fields such as wireless and mobile communications, computers, and measurement and scientific equipment. Low temperature operations can offer certain advantages such as higher operational speeds, lower power dissipation, shorter signal transmission times, higher semiconductor and metal thermal conductivities, and improved digital and analog circuit performance.The computer, telecommunication, and cellular phone market is pushing the semiconductor industry towards the development of very aggressive device and integrated circuit fabrication technologies. This is taking these technologies towards the physical miniaturization limit, where quantum effects and fabrication costs are becoming a technological and economical barrier for further development. In view of these limitations, operation of semiconductor devices and circuits at low temperature (cryogenic temperature) is studied in this book.* It is a book intended for a wide audience: students, scientists, technology development engineers, private companies, universities, etc.* It contains information which is for the first time available as an all-in-one source; Interdisciplinary material is arranged and made compatible in this book* It is a must as reference source

Download or read book Study of Ultra Thin Body Junctionless Poly Si Fin Field Effect Transistor with a Trench Structure written by 吳明欣 and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nanowire Field Effect Transistor FET written by Antonio García-Loureiro and published by . This book was released on 2021 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.

Download or read book Device Circuit Co Design Issues in FETs written by Shubham Tayal and published by CRC Press. This book was released on 2023-08-22 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an overview of emerging semiconductor devices and their applications in electronic circuits, which form the foundation of electronic devices. Device Circuit Co-Design Issues in FETs provides readers with a better understanding of the ever-growing field of low-power electronic devices and their applications in the wireless, biosensing, and circuit domains. The book brings researchers and engineers from various disciplines of the VLSI domain together to tackle the emerging challenges in the field of engineering and applications of advanced low-power devices in an effort to improve the performance of these technologies. The chapters examine the challenges and scope of FinFET device circuits, 3D FETs, and advanced FET for circuit applications. The book also discusses low-power memory design, neuromorphic computing, and issues related to thermal reliability. The authors provide a good understanding of device physics and circuits, and discuss transistors based on the new channel/dielectric materials and device architectures to achieve low-power dissipation and ultra-high switching speeds to fulfill the requirements of the semiconductor industry. This book is intended for students, researchers, and professionals in the field of semiconductor devices and nanodevices, as well as those working on device-circuit co-design issues.

Download or read book Silicon Nanowire Transistors written by Ahmet Bindal and published by Springer. This book was released on 2016-02-23 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI.