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EBookClubs

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Book Modeling Nanowire and Double Gate Junctionless Field Effect Transistors

Download or read book Modeling Nanowire and Double Gate Junctionless Field Effect Transistors written by Farzan Jazaeri and published by Cambridge University Press. This book was released on 2018-03-01 with total page 255 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.

Book Study of Novel Nano Scale Multi Gate Junctionless Field Effect Transistors

Download or read book Study of Novel Nano Scale Multi Gate Junctionless Field Effect Transistors written by and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Tunnel Field effect Transistors TFET

Download or read book Tunnel Field effect Transistors TFET written by Jagadesh Kumar Mamidala and published by John Wiley & Sons. This book was released on 2016-09-27 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research into Tunneling Field Effect Transistors (TFETs) has developed significantly in recent times, indicating their significance in low power integrated circuits. This book describes the qualitative and quantitative fundamental concepts of TFET functioning, the essential components of the problem of modelling the TFET, and outlines the most commonly used mathematical approaches for the same in a lucid language. Divided into eight chapters, the topics covered include: Quantum Mechanics, Basics of Tunneling, The Tunnel FET, Drain current modelling of Tunnel FET: The task and its challenges, Modeling the Surface Potential in TFETs, Modelling the Drain Current, and Device simulation using Technology Computer Aided Design (TCAD). The information is well organized, describing different phenomena in the TFETs using simple and logical explanations. Key features: * Enables readers to understand the basic concepts of TFET functioning and modelling in order to read, understand, and critically analyse current research on the topic with ease. * Includes state-of-the-art work on TFETs, attempting to cover all the recent research articles published on the subject. * Discusses the basic physics behind tunneling, as well as the device physics of the TFETs. * Provides detailed discussion on device simulations along with device physics so as to enable researchers to carry forward their study on TFETs. Primarily targeted at new and practicing researchers and post graduate students, the book would particularly be useful for researchers who are working in the area of compact and analytical modelling of semiconductor devices.

Book Junctionless Field Effect Transistors

Download or read book Junctionless Field Effect Transistors written by Shubham Sahay and published by John Wiley & Sons. This book was released on 2019-01-28 with total page 615 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.

Book Technology Computer Aided Design

Download or read book Technology Computer Aided Design written by Chandan Kumar Sarkar and published by CRC Press. This book was released on 2018-09-03 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt: Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.

Book The Physics of Semiconductor Devices

Download or read book The Physics of Semiconductor Devices written by R. K. Sharma and published by Springer. This book was released on 2019-01-31 with total page 1260 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.

Book Nanowires

Download or read book Nanowires written by Anqi Zhang and published by Springer. This book was released on 2016-07-26 with total page 327 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive summary of nanowire research in the past decade, from the nanowire synthesis, characterization, assembly, to the device applications. In particular, the developments of complex/modulated nanowire structures, the assembly of hierarchical nanowire arrays, and the applications in the fields of nanoelectronics, nanophotonics, quantum devices, nano-enabled energy, and nano-bio interfaces, are focused. Moreover, novel nanowire building blocks for the future/emerging nanoscience and nanotechnology are also discussed.Semiconducting nanowires represent one of the most interesting research directions in nanoscience and nanotechnology, with capabilities of realizing structural and functional complexity through rational design and synthesis. The exquisite control of chemical composition, morphology, structure, doping and assembly, as well as incorporation with other materials, offer a variety of nanoscale building blocks with unique properties.

Book Emerging Devices for Low Power and High Performance Nanosystems

Download or read book Emerging Devices for Low Power and High Performance Nanosystems written by Simon Deleonibus and published by CRC Press. This book was released on 2018-12-13 with total page 410 pages. Available in PDF, EPUB and Kindle. Book excerpt: The history of information and communications technologies (ICT) has been paved by both evolutive paths and challenging alternatives, so-called emerging devices and architectures. Their introduction poses the issues of state variable definition, information processing, and process integration in 2D, above IC, and in 3D. This book reviews the capabilities of integrated nanosystems to match low power and high performance either by hybrid and heterogeneous CMOS in 2D/3D or by emerging devices for alternative sensing, actuating, data storage, and processing. The choice of future ICTs will need to take into account not only their energy efficiency but also their sustainability in the global ecosystem.

Book Power GaN Devices

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Book Advances in Communication Devices and Networking

Download or read book Advances in Communication Devices and Networking written by Rabindranath Bera and published by Springer. This book was released on 2019-02-15 with total page 574 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book covers recent trends in the field of devices, wireless communication and networking. It presents the outcomes of the International Conference in Communication, Devices and Networking (ICCDN 2018), which was organized by the Department of Electronics and Communication Engineering, Sikkim Manipal Institute of Technology, Sikkim, India on 2–3 June, 2018. Gathering cutting-edge research papers prepared by researchers, engineers and industry professionals, it will help young and experienced scientists and developers alike to explore new perspectives, and offer them inspirations on addressing real-world problems in the field of electronics, communication, devices and networking.

Book Modern Semiconductor Devices for Integrated Circuits

Download or read book Modern Semiconductor Devices for Integrated Circuits written by Chenming Hu and published by Prentice Hall. This book was released on 2010 with total page 387 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern Semiconductor Devices for Integrated Circuits, First Edition introduces readers to the world of modern semiconductor devices with an emphasis on integrated circuit applications. KEY TOPICS Electrons and Holes in Semiconductors; Motion and Recombination of Electrons and Holes; Device Fabrication Technology; PN and Metal Semiconductor Junctions; MOS Capacitor; MOS Transistor; MOSFETs in ICs Scaling, Leakage, and Other Topics; Bipolar Transistor. MARKET Written by an experienced teacher, researcher, and expert in industry practices, this succinct and forward-looking text is appropriate for anyone interested in semiconductor devices for integrated curcuits, and serves as a suitable reference text for practicing engineers. "