Download or read book Study of HfO2 Based High k Gate Dielectric Thin Films Grown by Pulsed Laser Deposition written by Pui-fai Lee and published by . This book was released on 2004 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thin Films and Heterostructures for Oxide Electronics written by Satishchandra B. Ogale and published by Springer Science & Business Media. This book was released on 2005-11-21 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: Oxides form a broad subject area of research and technology development which encompasses different disciplines such as materials science, solid state chemistry, physics etc. The aim of this book is to demonstrate the interplay of these fields and to provide an introduction to the techniques and methodologies involving film growth, characterization and device processing. The literature in this field is thus fairly scattered in different research journals covering one or the other aspect of the specific activity. This situation calls for a book that will consolidate this information and thus enable a beginner as well as an expert to get an overall perspective of the field, its foundations, and its projected progress.
Download or read book Heteroepitaxial Growth of High K Dielectric Thin Films by Pulsed Laser Deposition written by Wai-ming Yu and published by . This book was released on 2004 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dielectric Response of K Ta Nb O3 Thin Films and Superlattices Grown by Pulsed Laser Deposition written by Jennifer Sigman and published by . This book was released on 2004 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics and Technology of High k Gate Dielectrics 5 written by Samares Kar and published by The Electrochemical Society. This book was released on 2007 with total page 676 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue covers in detail all aspects of the physics and the technology of high dielectric constant gate stacks, including high mobility substrates, high dielectric constant materials, processing, metals for gate electrodes, interfaces, physical, chemical, and electrical characterization, gate stack reliability, and DRAM and non-volatile memories.
Download or read book Studies on Structural and Dielectric Properties of Ga2O3 Thin Films written by Lee Sang a and published by LAP Lambert Academic Publishing. This book was released on 2014-12-03 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this study we report on structural and electric properties of -Ga2O3 on Si and GaN substrates. Since Ga2O3 has a band-gap of 4.8 eV at room temperature and a dielectric constant of 10.2 14.2, Ga2O3 can be a potential candidate dielectrics for MIS devices. -Ga2O3 has been deposited using various techniques such as radio-frequency sputtering, plasma enhanced atomic layer deposition (PEALD), and pulsed laser deposition (PLD). In particular, epitaxial Ga2O3 thin films grown on n-GaN/Al2O3 substrate by PLD technique have a monoclinc -Ga2O3 phase and peaks were indexed as (-2 0 1) and higher order diffractions. Optical transmittance of the epitaxial -Ga2O3 film was more than 90% from UV to visible spectral regions and the optical band-gap of the -Ga2O3 was calculated to be about 4.8 eV. Moreover, we have fabricated MFIS capacitors using Ga2O3 and Ba0.5Sr0.5TiO3 (BST) thin films on GaN/Al2O3 substrate by pulsed laser deposition. The epitaxial growth, structural analysis, and dielectric properties of the Ga2O3 films and BST thin films will be discussed.
Download or read book Defects in HIgh k Gate Dielectric Stacks written by Evgeni Gusev and published by Springer Science & Business Media. This book was released on 2006-02-15 with total page 495 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goal of this NATO Advanced Research Workshop (ARW) entitled “Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices”, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.
Download or read book Pulsed Laser Deposition of Thin Films written by Robert Eason and published by John Wiley & Sons. This book was released on 2007-12-14 with total page 754 pages. Available in PDF, EPUB and Kindle. Book excerpt: Edited by major contributors to the field, this text summarizes current or newly emerging pulsed laser deposition application areas. It spans the field of optical devices, electronic materials, sensors and actuators, biomaterials, and organic polymers. Every scientist, technologist and development engineer who has a need to grow and pattern, to apply and use thin film materials will regard this book as a must-have resource.
Download or read book Thin Film Growth of Dielectric Materials by Pulsed Laser Deposition written by Jason Christopher Anders and published by . This book was released on 2014 with total page 71 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin films of SryCa1-yZr1-xTixO3 (SCZT) with x = 0.8, y = 0.01, CaHf1-xTixO3 (CHT) with x = 0.8, and xBiScO3 - (1-x) BaTiO3 with x = 0.36 (BSBT(36/64)) showing a high permittivity are useful both in capacitor applications. These dielectric thin films with a SrRuO3 (SRO) conductive bottom electrodes were prepared by using pulsed laser deposition on 100 La0.3Sr0.7Al0.65Ta0.35O3 (LSAT) single crystal substrates. In a search of optimal conditions to achieve epitaxially grown SCZT, CHT, BSBT(36/64), and SRO thin films, different substrate temperatures (600 C, 650 C, 750 C, and 800 C) and different partial pressures of oxygen (50 mTorr, 100 mTorr and 300 mTorr) in the chamber were used during deposition onto LSAT substrates. The optimized deposition conditions for conductive buffer layer of SRO film required 300 mTorr of oxygen partial pressure and substrate temperature of 750 C. The thorough structural and chemical studies of SCZT, CHT and BSBT(36/64) films were done by using SEM (scanning electron microscopy), AFM (atomic force microscopy), and XRD (X-ray diffraction) measurements. Sputtered gold top electrodes were added to the samples, along with etching to the SRO conductive buffer layer. These conductive electrodes were used to generate an AC electric field between the top electrodes and conductive buffer layer. Electrical characterizations of thin films such as complex permittivity, resistance and capacitance of grains and grain boundaries were performed using AC impedance spectroscopy, with curve fitting using Z-View software.
Download or read book Photoemission Studies of Thin Films Grown by Pulsed Laser Deposition written by Mike Abrecht and published by . This book was released on 2003 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Understanding the Structure of High K Gate Oxides Oral Presentation written by and published by . This book was released on 2015 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hafnium Oxide (HfO2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant ([kappa]) over Silicon Dioxide. The present study looks to find the atomic structure of HfO2 thin films which hasn't been done with the technique of this study. In this study, two HfO2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer. Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.
Download or read book Ferroelectricity in Doped Hafnium Oxide written by Uwe Schroeder and published by Woodhead Publishing. This book was released on 2019-03-27 with total page 570 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
Download or read book Atomic Layer Deposition of Amorphous Hafnium based Thin Films with Enhance Thermal Stabilities written by Tuo Wang and published by . This book was released on 2010 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continuous scaling of microelectronic devices requires high permittivity (high-k) dielectrics to replace SiO2 as the gate material. HfO2 is one of the most promising candidates but the crystallization temperature of amorphous HfO2 is too low to withstand the fabrication process. To enhance the film thermal stability, HfO2 is deposited using atomic layer deposition (ALD), and incorporated with various amorphizers, such as La2O3, Al2O3, and Ta2O5. The incorporation is achieved by growing multiple ALD layers of HfO2 and one ALD layer of MO[subscript x] (M = La, Al, and Ta) alternately (denoted as [xHf + 1M]), and the incorporation concentration can be effectively controlled by the HfO2-to-MO[subscript x] ALD cycle ratio (the x value). The crystallization temperature of 10 nm HfO2 increases from 500 °C to 900 °C for 10 nm [xHf + 1M] film, where x = 3, 3, and 1 for M = La, Al, and Ta, respectively. The incorporation of La2O3, and Ta2O5 will not compromise the dielectric constant of the film because of the high-k nature of La2O3, and Ta2O5. Angle resolved X-ray photoelectron spectroscopy (AR-XPS) reveals that when the HfO2-to-MO[scubscript x] ALD cycle ratio is large enough (x> 3 and 4 for La and Al, respectively), periodic structures exist in films grown by this method, which are comprised of repeated M-free HfO2 ultrathin layers sandwiched between HfM[subscript x]O[scubscript y] layers. Generally, the film thermal stability increases with thinner overall thickness, higher incorporation concentration, and stronger amorphizing capability of the incorporated elements. When the x value is low, the films are more like homogeneous films, with thermal stabilities determined by the film thickness and the amorphizer. When the x value is large enough, the periodically-repeated structure may add an extra factor to stabilize the amorphous phase. For the same incorporation concentration, films with an appropriately high periodicity may have an increased thermal stability. The manner by which the periodic structure and incorporated element affect thermal stability is explored and resolved using nanolaminates comprised of alternating layers of [scubscript y]HfO2 and [xHf + 1M] x n, where y varied from 2 to 20, x varied from 1 to 2, and n varied from 4 to 22.
Download or read book Functional Metal Oxide Thin Films Grown by Pulsed Laser Deposition written by Mihaela Filipescu and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of this work is to show that material processing by laser-based technologies can lead to the growth of multifunctional thin films with potential in a large area of applications. The synthesis of Hf, Ta, Si, and Al metal oxides described here relies on the use of pulsed laser deposition (PLD), or radiofrequency (RF) assisted PLD. The morphology and structure of the as-grown thin films are investigated by atomic force microscopy, X-ray diffraction, and transmission electron microscopy, whilst the optical properties are determined by spectroellipsometry. The dielectric behaviour of the deposited layers is investigated by electrical measurements.
Download or read book Handbook of Thin Film Deposition written by Krishna Seshan and published by William Andrew. This book was released on 2018-02-23 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Handbook of Thin Film Deposition, Fourth Edition, is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, materials for memory applications and methods for thin film optical processes. The book is broken up into three sections: scaling, equipment and processing, and applications. In this newly revised edition, the handbook will also explore the limits of thin film applications, most notably as they relate to applications in manufacturing, materials, design and reliability. Offers a practical survey of thin film technologies aimed at engineers and managers involved in all stages of the process: design, fabrication, quality assurance, applications and the limitations faced by those processes Covers core processes and applications in the semiconductor industry and new developments within the photovoltaic and optical thin film industries Features a new chapter discussing Gates Dielectrics
Download or read book Study on SiGe Thin Films Grown by Pulsed Laser Deposition written by Mohammed Habibullah Khan and published by . This book was released on 2006 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: Grows silicon germanium (SiGe) polycrystalline thin films by the pulsed laser deposition (PLD) method and studies the thin films for different temperature, background pressure, laser fluence, distance between substrate and target, and off axis substrate position. Studies the effect of operating parameters on growth rate and film quality to optimize growth parameters. Considers the non-stoichiometric transfer of SiGe, uniformity issues, particulate issues, and resistivities with respect to the operating variables of PLD.
Download or read book High k Gate Dielectrics written by Michel Houssa and published by CRC Press. This book was released on 2003-12-01 with total page 460 pages. Available in PDF, EPUB and Kindle. Book excerpt: The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ
