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Book Passivation of Amorphous Indium gallium zinc Oxide IGZO Thin film Transistors

Download or read book Passivation of Amorphous Indium gallium zinc Oxide IGZO Thin film Transistors written by Nathaniel Walsh and published by . This book was released on 2014 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Thin-film transistors (TFTs) with channel materials made out of hydrogenated amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) have been extensively investigated. Amorphous silicon continues to dominate the large-format display technology; however newer technologies demand a higher performance TFT which a-Si:H cannot deliver due to its low electron mobility, μn ~ 1 cm2/V*s. Metal-oxide materials such as Indium-Gallium-Zinc Oxide (IGZO) have demonstrated semiconductor properties, and are candidates to replace a Si:H for TFT backplane technologies. This work involves the fabrication and characterization of TFTs utilizing a-IGZO deposited by RF sputtering. An overview of the process details and results from recently fabricated IGZO TFTs following designed experiments are presented, followed by analysis of electrical results. The investigated process variables were the thickness of the IGZO channel material, passivation layer material, and annealing conditions. The use of electron-beam deposited Aluminum oxide (alumina or Al2O3) as back-channel passivation material resulted in improved device stability; however ID VG transfer characteristics revealed the influence of back-channel interface traps. Results indicate that an interaction effect between the annealing condition (time/temperature) and the IGZO thickness on the electrical behavior of alumina-passivated devices may be significant. A device model implementing fixed charge and donor-like interface traps that are consistent with oxygen vacancies (OV) resulted in a reasonable match to measured characteristics. Modified annealing conditions have resulted in a reduction of back-channel interface traps, with levels comparable to devices fabricated without the addition of passivation material."--Abstract.

Book Study of Physical Mechanisms of Electrical Reliability for Passivation Layer Applied to Amorphous Indium Gallium Zinc Oxide Thin Film Transistors

Download or read book Study of Physical Mechanisms of Electrical Reliability for Passivation Layer Applied to Amorphous Indium Gallium Zinc Oxide Thin Film Transistors written by and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Amorphous Oxide Semiconductors

Download or read book Amorphous Oxide Semiconductors written by Hideo Hosono and published by John Wiley & Sons. This book was released on 2022-05-17 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt: AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.

Book Amorphous Indium Gallium Zinc Oxide Based Thin Film Transistors and Circuits

Download or read book Amorphous Indium Gallium Zinc Oxide Based Thin Film Transistors and Circuits written by Haojun Luo and published by . This book was released on 2013 with total page 155 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Composition Engineering for Solution Processed Gallium Rich Indium Gallium Zinc Oxide Thin Film Transistors

Download or read book Composition Engineering for Solution Processed Gallium Rich Indium Gallium Zinc Oxide Thin Film Transistors written by Isaac Caleb Wang and published by . This book was released on 2018 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal oxides have risen to prominence in recent years as a promising active layer for thin film transistors (TFTs). One of the main reasons for this has been its value in display technology. Conventionally, displays have relied on amorphous hydrogenated silicon (a-Si:H) TFTs but the demand for large area displays with high resolution, fast response time, low power consumption and compatibility with integrated driving circuits have prompted research into other semiconducting materials. As a result, metal oxides have become major prospects to replace a-Si:H with their high-performance electrical characteristics and simplicity of processing, making them valuable switching elements in display technology. Particularly, quaternary metal oxides such as the amorphous Indium-Gallium-Zinc-Oxide (IGZO) have demonstrated extremely high performances as TFTs, prompting extensive research in the field. The conventional method of producing metal oxide thin films has been through vacuum deposition methods such as sputtering. However, for large area applications these vacuum deposition methods face inherent limitations which prevent easy application and device fabrication. Facing these restrictions, solution-processing has become a popularly researched alternative in producing metal oxide thin films due to their simple processing requirements, low cost, and ability to be applied over large areas. In solution-processed IGZO, there have been a couple approaches to improve device performance and stability as well as simplify processing. In this work, we produce a gallium-rich 2:2:1 IGZO TFT using solution processes and study its electrical characteristics and stability. In this paper, we demonstrate a working solution-processed gallium-rich 2:2:1 IGZO TFT and compare it to a solution-processed indium-rich device to quantify its stability and performance. Through this work, we show that solution-processing is a viable fabrication method for gallium-rich IGZO, which can be a high-stability alternative to other compositions of IGZO devices.

Book Electrical Characteristics of Amorphous Indium gallium zinc oxide Thin film Transistors and Enhanced Ultra thin body Mosfets by Charged Buried Oxide

Download or read book Electrical Characteristics of Amorphous Indium gallium zinc oxide Thin film Transistors and Enhanced Ultra thin body Mosfets by Charged Buried Oxide written by 林軒毅 and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Introduction to Thin Film Transistors

Download or read book Introduction to Thin Film Transistors written by S.D. Brotherton and published by Springer Science & Business Media. This book was released on 2013-04-16 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and instability mechanisms. The thin film transistors implemented with these materials are the conventional, insulated gate field effect transistors, and a further chapter describes a new thin film transistor structure: the source gated transistor, SGT. The driving force behind much of the development of TFTs has been their application to AMLCDs, and there is a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic displays. A discussion of TFT and pixel layout issues is also included. For students and new-comers to the field, introductory chapters deal with basic semiconductor surface physics, and with classical MOSFET operation. These topics are handled analytically, so that the underlying device physics is clearly revealed. These treatments are then used as a reference point, from which the impact of additional band-gap states on TFT behaviour can be readily appreciated. This reference book, covering all the major TFT technologies, will be of interest to a wide range of scientists and engineers in the large area electronics industry. It will also be a broad introduction for research students and other scientists entering the field, as well as providing an accessible and comprehensive overview for undergraduate and postgraduate teaching programmes.