Download or read book Studies on Hot Carrier Effects in 12V P LDMOS Transistors written by 黃忠彬 and published by . This book was released on 2010 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hot Carrier Reliability in 12V High Voltage P LDMOS Transistors written by 吳泰慶 and published by . This book was released on 2009 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hot Carrier Effect on LDMOS Transistors written by Liangjun Jiang and published by . This book was released on 2007 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt: One of the main problems encountered when scaling down is the hot carrier induced degradation of MOSFETs. This problem has been studied intensively during the past decade, under both static and dynamic stress conditions. In this period it has evolved from a more or less academic research topic to one of the most stringent constraints guaranteeing the lifetime of sub-micron devices. New drain engineering technique leads to the extensive usage of lateral doped drain structures. In these devices the peak of the lateral field is lowered by reducing the doping concentration near the drain and by providing a smooth junction transition instead of an abrupt one. Therefore, the amount of hot carrier generation for a given supply voltage and the influence of a certain physical damage on the electrical characteristics is decreased dramatically. A complete understanding of the hot carrier degradation problem in sub-micron 0.25um LD MOSFETs is presented in this work. First we discuss the degradation mechanisms observed under, for circuit operation, somewhat artificial but well-controlled uniform-substrate hot electron and substrate hot-hole injection conditions. Then the more realistic case of static channel hot carrier degradation is treated, and some important process-related effects are illustrated, followed by the behavior under the most relevant case for real operation, namely dynamic degradation. An Accurate and practical parameter extraction is used to obtain the LD MOSFETs model parameters, with the experiment verification. Good agreement between the model simulation and experiment is achieved. The gate charge transfer performance is examined to demonstrate the hot carrier effect. Furthermore, In order to understand the dynamic stress on the LD MOSFET and its effect on RF circuit, the hot-carrier injection experiment in which dynamic stress with different duty cycle applied to a LD MOS transistor is presented. A Class-C power amplifier is used to as an example to demonstrate the effect of dynamic stress on RF circuit performance. Finally, the strategy for improving hot carrier reliability and a forecast of the hot carrier reliability problem for nano-technologies are discussed. The main contribution of this work is, it systemically research the hot carrier reliability issue on the sub-micron lateral doped drain MOSFETs, which is induced by static and dynamic voltage stress; The stress condition mimics the typical application scenarios of LD MOSFET. Model parameters extraction technique is introduced with the aid of the current device modeling tools, the performance degradation model can be easily implement into the existing computer-aided tools. Therefore, circuit performance degradation can be accurately estimated in the design stage. CMOS technologies are constantly scaled down. The production on 65 nm is on the market. With the reduction in geometries, the devices become more vulnerable to hot carrier injection (HCI). HCI reliability is a must for designs implemented with new processes. Reliability simulation needs to be implemented in PDK libraries located on the modeling stage. The use of professional tools is a prerequisite to develop accurate device models, from DC to GHz, including noise modeling and nonlinear HF effects, within a reasonable time. Designers need to learn to design for reliability and they should be educated on additional reliability analyses. The value is the reduction of failure and redesign costs.
Download or read book Hot Carrier Reliability of 12V High Voltage N LDMOS Transistors written by 陳翔裕 and published by . This book was released on 2006 with total page 65 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Mechanism of Hot Carrier Reliability in High Voltage P type LDMOS Transistors written by 嚴進嶸 and published by . This book was released on 2007 with total page 70 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A study of hot carrier degradation in LDMOS transistor written by Atikah Razi and published by . This book was released on 2013 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hot Carrier Degradation in Semiconductor Devices written by Tibor Grasser and published by Springer. This book was released on 2014-10-29 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.
Download or read book The Effect of Device Dimension on Hot Carrier Reliability of N type LDMOS Transistors written by 王瑋傑 and published by . This book was released on 2007 with total page 73 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Failure Analysis of Hot Electron Effect on Power Rf N Ldmos Transistor written by Mohamed Ali Bela D and published by LAP Lambert Academic Publishing. This book was released on 2012-07 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: Current problems in electronics for manufacturers or users are to determine the lifetime and estimate the reliability of device or system. As well improve their performance and quality. This book presents a synthesis of Hot-Electron effects on power RF LDMOS performances, after accelerated ageing tests. This can modify and degrade transistor physical and electrical behaviour. The temperature can limit the lifetime of semiconductors and plays an essential part in the degradation mechanisms. An electric characterization (IC-CAP) has been made, and a thermoelectric model ADS has been implemented. This is used as the reliability tool (parameters extraction) in order to quantify the parameter shift. We have pointed out the relation between the ageing tests and the hot carrier degradation in RF LDMOS, and its effect on the electric performances. To understanding of the degradation physical phenomena brought into play in the structure, we used a physical simulation 2-D (Atlas) to con rm these phenomena. Finally, the work demonstrates that the degradation mechanism of power RF LDMOS is the hot carrier injection phenomenon in the already existing oxide traps and/or in the Si/SiO2 interface."
Download or read book Hot Carrier Studies on Heterostructure Silicon Germanium P Channel Metal Oxide Semiconductor Field Effects Transistor written by Gan Chye Siong Kenny and published by . This book was released on 2004 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: This study examines the susceptibility hot carrier effect on various Heterostructures Silicon Germanium P-Channel Metal Oxide Semiconductor Field Effect Transistor (SiGe PMOSFET) such as Strained SiGe Channel and Strained Channel and Strained SiGe Source/Drain PMOSFET. The result were compared with Si Channel PMOSFET. The hot carrier effect of these struture was investigated in the aspect of material, structural snd mobility via impact ionization. Stimulations were performed with ATLAS/BLAZE 2D to design the device structures and to stimulate the hot carriers effects indicated by substrate and gate current. The SiGe heterostructure PMOSFETs have higher hot carrier effects as verified by substrate current with an increase of 131% for Strained SiGe Channel PMOSFET and 199% for SiGe Source and Drain PMOSFET with 25% Ge fraction respectively as compare to the Si PMOSFET. The increase of hot carrier effects in SiGe structure is due to higher impact ionization rate approximately an order of magnitude in SiGe as compared to Si. The incorporation of Si-cap in the SiGe heterostructure enhanced the suppression of hot carrier injected into the gate. However the buried layer of Strained SiGe channel PMOSFET suppresses the impact ionization rate to a certain level of thickness. Beyond that impact ionization increases with the Ge content as verified by substrate current. On the other hand the increase of Ge content suppressed further the hot carrier injection into the gate to higher valence band energy between the SiGe channel and the Si-cap. As a thicker layer of p+SiGe in the drain region is fabricated in the Strained SiGe Source and Drain PMOSFET result show an enhancement in hot carrier effect. This is caused by a higher impact ionization rate in SiGe and also most area of impact ionization is covered as the thickness of SiGe layer is increased. In the aspect of mobility, the high mobility SiGe channel PMOSFET enhanced further the hot carrier effects through the enhancement of current drives whereas hot carrier effects decreases in the Strained SiGe Source and Drain PMOSFET despite setting a higher low field mobility in the p+SiGe source and draim region. In fact the current drive in Strained SiGe Source and Drain PMOSFET is lower that Si channel PMOSFET due to the valence band discontinuity that causes a higher barrier height for holes flowing from source to drain. This indicated that the hot carrier is also affected by the current drive.
Download or read book Hot carrier Effects in P MOSFETs written by Tong-Chern Ong and published by . This book was released on 1988 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study of hot carrier effects in submicron MOSFET s written by Yun-Kang Kevin Wu and published by . This book was released on 1992 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the International Symposium on the Physical Failure Analysis of Integrated Circuits written by and published by . This book was released on 2004 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characteristics and Hot Carrier Reliability in 40V N type LDMOS Transistors written by 郭育禎 and published by . This book was released on 2009 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the International Symposium on Power Semiconductor Devices and ICs written by and published by . This book was released on 2000 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Radio Frequency Transistors written by Helge Granberg and published by Elsevier. This book was released on 2013-10-22 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: Cellular telephones, satellite communications and radar systems are adding to the increasing demand for radio frequency circuit design principles. At the same time, several generations of digitally-oriented graduates are missing the essential RF skills. This book contains a wealth of valuable design information difficult to find elsewhere. It's a complete 'tool kit' for successful RF circuit design. Written by experienced RF design engineers from Motorola's semiconductors product section.Book covers design examples of circuits (e.g. amplifiers; oscillators; switches; pulsed power; modular systems; wiring state-of-the-art devices; design techniques).
