Download or read book Studies of Oxygen Implantation Induced Deep Level Defects in Zinc Oxide Single Crystal written by Ziran Ye and published by . This book was released on 2017-01-26 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Studies of Oxygen Implantation Induced Deep Level Defects in Zinc Oxide Single Crystal written by Ziran Ye and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deep Level Transient Spectroscopic Study of Intrinsic Defects in Particle Irradiated Zno Single Crystal Materials written by Xiaohong Lu and published by Open Dissertation Press. This book was released on 2017-01-26 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Deep Level Transient Spectroscopic Study of Intrinsic Defects in Particle-irradiated ZnO Single Crystal Materials" by Xiaohong, Lu, 吕小红, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Zinc oxide (ZnO), as a Ⅱ-Ⅵ compound semiconductor with a wide direct band gap, has attracted great attention from the worldwide researchers for its potential application in the fields of spintronics and optoelectronics. At present research about the defects in ZnO and ZnO-based materials is still far from complete. The deep level defects in melted grown ZnO single crystal induced by helium ions implantation and electron irradiation, as well as their thermal evolution, were studied in this research using the technique of deep level transient spectroscopy (DLTS) and photoluminescence (PL). DLTS results indicated that, besides E3 ( 0.28 ) trap which was widely observed in the as-grown ZnO samples, the deep level with 0.92 was also indentified in the helium-implanted ZnO samples, which was introduced by the ion implantation and tentatively assigned to be the oxygen vacancy (VO). This deep level was removed after 350 oC annealing in argon gas. Annealing at 350 oC also brought along a new deep level with 0.66 into helium-implanted samples which could be annealed out by 650 oC annealing in argon gas. The electron irradiation induced a deep level with 0.59 into ZnO, which was probably associated with the singly charged state of VO. This deep level also tended to be removed at 350 oC annealing in argon gas. The PL spectra revealed that both helium implantation and electron irradiation could improve the bound-exciton peak. Helium implantation also introduced defects emission at 1.90 eV, which was the red luminescence band, into the ZnO single crystal materials. This red luminescence band peak might be associated with DAP recombination. Electron irradiation might restrain the green luminescence in ZnO single crystal. The fine structures could disappear as the measurement temperature increased, leaving the green luminescence band only. DOI: 10.5353/th_b4786991 Subjects: Zinc oxide - Defects Deep level transient spectroscopy
Download or read book Deep Level Defects Study of Arsenic Implanted Zno Single Crystal written by Congyong Zhu and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Deep Level Defects Study of Arsenic Implanted ZnO Single Crystal" by Congyong, Zhu, 朱從佣, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b4098775 Subjects: Zinc oxide Arsenic Doped semiconductors Semiconductors - Defects Deep level transient spectroscopy
Download or read book Deep Level Defects Study of Arsenic Implanted ZnO Single Crystal written by Congyong Zhu and published by . This book was released on 2008 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defect Studies of Single Crystal and Thin Film Zinc Oxide by Positron Annihilation Spectroscopy and Cathodoluminescence written by Chun-Kit To and published by . This book was released on 2017-01-26 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diffusion of Zinc and Oxygen in Single Crystals of Zinc Oxide written by Elmer Lee Williams and published by . This book was released on 1959 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1973 with total page 1052 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defect Studies of Single Crystal and Thin Film Zinc Oxide by Positron Annihilation Spectroscopy and Cathodoluminescence written by Chun-kit To and published by . This book was released on 2010 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Zinc Oxide and Related Materials Volume 957 written by Jürgen H. Christen and published by . This book was released on 2007-04-05 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. The topics covered in this volume, first published in 2007, include devices, defects, spintronics and magnetism, growth, optical properties and nanostructures, and doping and processing TFTs.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defect Study of Zinc Oxide Bulk Materials by Positron Lifetime Spectroscopy written by 蘇振強 and published by . This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Defect Study of Zinc Oxide Bulk Materials by Positron Lifetime Spectroscopy" by 蘇振強, Chun-keung, So, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled DEFECT STUDY OF ZINC OXIDE BULK MATERIALS BY POSITRON LIFETIME SPECTROSCOPY submitted by So Chun Keung for the Degree of Master of Philosophy at The University of Hong Kong in January 2008 Vacancy type defects in ZnO bulk materials grown by different methods from various companies were studied by positron lifetime spectroscopy. Hydrothermal grown ZnO samples from University Wafers Company contained a single 193 ps positron lifetime component, attributed to a zinc vacancy related defect. Upon electron irradiation, a single 185 ps positron lifetime was identified which was explained by the formation of another zinc vacancy related defect. This defect remained stable after isochronal annealing of the sample up to 1200C. Samples from the same company but of different batches contained a 180 ps single lifetime component. In addition, hydrothermal grown ZnO single crystals from Altramet Company and MaTecK Company also demonstrated the 180 ps single lifetime component. Two batches of ZnO single crystals grown by pressurized melt grown method from Cermet company were studied. Data analyses on the older batch samples revealed 1the existence of a 257 ps lifetime component, tentatively attributed to Zn+O divacancy defect. This defect was not detected in more recently grown samples. Instead, a 166 ps single component was found, of which the nature of it could not be unambiguously determined. Vapour phase grown as-grown and 900C annealed ZnO samples were studied. Single lifetime component of 175 ps was identified. Nevertheless, the exact nature of it required further investigation. In the present study, positron lifetimes in different ZnO samples were found. The kinds of open volume vacancy-type defects were believed to be dependent on the growing methods. In addition, production of ZnO single crystals with high and consistent qualities was yet to be achieved at present. 2 DOI: 10.5353/th_b3955869 Subjects: Zinc oxide Materials - Defects Positrons - Spectra
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1984 with total page 1294 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book DEFECTS AND OPTOELECTRONIC PROPERTIES OF ZINC OXIDE written by Naresh Adhikari and published by . This book was released on 2019 with total page 53 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zinc oxide (ZnO) is a compound semiconductor with a direct wide band gap of 3.4 eV with a high exciton binding energy of 60 meV at room temperature. It is a widely investigated semiconductor due to its high potential for optoelectronic applications in the UV region, especially, for light-emitting diodes and lasers. In these applications of ZnO, native point defects play key roles. The understanding of these defects will help us to realize and control the performance of ZnO in these applications. Also, it will help us to realize p-type doping in ZnO, which will open a way for oxide semiconductor based bipolar devices. Due to the reproducibility of high-quality ZnO crystals and their interesting properties, it is preferred for extensive research over other wide band gap semiconductors. So far, as research points out, native point defects are not well understood. In our work, we will present electrical and optical characterization studies done on ZnO single crystals as well as on polycrystals, and we will relate these measurements to defect studies using Positron Annihilation Lifetime Spectroscopy (PALS) and Coincident Doppler Broadening Spectroscopy (CDBS). It was found that the increase in well-known green luminescence is associated with a decrease in conductivity and charge carrier concentration. Positron lifetime spectroscopy measurements were carried out to reveal the origin of defects responsible for decreasing the conductivity and enhancing the green luminescence. Lastly, it was interesting to observe the decrease in the ratio between green luminescence to near band emission as the laser power increased.
Download or read book Deep Level Transient Spectroscopic Study of Intrinsic Defects in Particle irradiated ZnO Single Crystal Materials written by 吕小红 and published by . This book was released on 2012 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deep Level Transient Spectroscopic Study of Intrinsic Defects in Particle irradiated ZnO Single Crystal Materials written by Xiaohong Lu (Ph. D.) and published by . This book was released on 2012 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Comparative Study on Chemical Properties of Zinc Oxide Single Crystal Surfaces with and Without Defects written by Wu-Hsun Cheng and published by . This book was released on 1982 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
