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Book Studies of acoustic surface waves in epitaxial gallium arsenide

Download or read book Studies of acoustic surface waves in epitaxial gallium arsenide written by Arne O. W. Spiermann and published by . This book was released on 1974 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Nonlinear Interaction of Acoustic Surface Waves in Epitaxial Gallium Arsenide

Download or read book Nonlinear Interaction of Acoustic Surface Waves in Epitaxial Gallium Arsenide written by and published by . This book was released on 1972 with total page 2 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Active Acoustic Waves and Electron in Gallium Arsenide

Download or read book Active Acoustic Waves and Electron in Gallium Arsenide written by Stanford University. Microwave Laboratory and published by . This book was released on 1975 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Epitaxial  100  GaAs Thin Films on Sapphire for Surface Acoustic Wave Electronic Devices

Download or read book Epitaxial 100 GaAs Thin Films on Sapphire for Surface Acoustic Wave Electronic Devices written by Victor E Haven (Jr) and published by . This book was released on 1985 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past year it has been demonstrated that undoped 111 single crystal gallium arsenide could be grown on 0112 sapphire using the metalorganic chemical vapor deposition (MO-CVD) growth technique. An interesting and unexpected result from this work was that the GaAs films grown had a 111 orientation instead of the proposed 100 orientation. Keywords include: Metalorganic chemical vapor deposition, gallium arsenide, surface acoustic wave devices, and R-plane sapphire.

Book Acoustic  Thermal Wave and Optical Characterization of Materials

Download or read book Acoustic Thermal Wave and Optical Characterization of Materials written by G.M. Crean and published by Elsevier. This book was released on 2014-08-04 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume focuses on a variety of novel non-destructive techniques for the characterization of materials, processes and devices. Emphasis is placed on probe-specimen interactions, in-situ diagnosis, instrumentation developments and future trends. This was the first time a symposium on this topic had been held, making the response particularly gratifying. The high quality of the contributions are a clear indication that non-destructive materials characterization is becoming a dynamic research area in Europe at the present time.A selection of contents: The role of acoustic properties in designs of acoustic and optical fibers (C.K. Jen). Observation of stable crack growth in Al2O3 ceramics using a scanning acoustic microscope (A. Quinten, W. Arnold). Mechanical characterization by acoustic techniques of SIC chemical vapour deposited thin films (J.M. Saurel et al.). Efficient generation of acoustic pressure waves by short laser pulses (S. Fassbender et al.). Use of scanning electron acoustic microscopy for the analysis of III-V compound devices (J.F. Bresse). Waves and vibrations in periodic piezoelectric composite materials (B.A. Auld). Precision ultrasonic velocity measurements for the study of the low temperature acoustic properties in defective materials (A. Vanelstraete, C. Laermans). Thermally induced concentration wave imaging (P. Korpiun et al.). Interferometric measurement of thermal expansion (V. Kurzmann et al.). Quantitative analyses of power loss mechanisms in semiconductor devices by thermal wave calorimetry (B. Büchner et al.). Thermal wave probing of the optical electronic and thermal properties of semiconductors (D. Fournier, A. Boccara). Thermal wave measurements in ion-implanted silicon (G. Queirola et al.). Optical-thermal non-destructive examination of surface coatings (R.E. Imhof et al.). Bonding analysis of layered materials by photothermal radiometry (M. Heuret et al.). Thermal non-linearities of semiconductor-doped glasses in the near-IR region (M. Bertolotti et al.). Theory of picosecond transient reflectance measurement of thermal and eisatic properties of thin metal films (Z. Bozóki et al.). The theory and application of contactless microwave lifetime measurement (T. Otaredian et al.). Ballistic phonon signal for imaging crystal properties (R.P. Huebener et al.). Determination of the elastic constants of a polymeric Langmuir-Blodgett film by Briliouin spectroscopy (F. Nizzoli et al.). Quantum interference effects in the optical second-harmonic response tensor of a metal surface (O. Keller). Study of bulk and surface phonons and plasmons in GaAs/A1As superlattices by far-IR and Raman spectroscopy (T. Dumslow et al.). Far-IR spectroscopy of bulk and surface phonon-polaritons on epitaxial layers of CdTe deposited by plasma MOCVD on GaAs substrates (T. Dumelow et al.). In-situ characterization by reflectance difference spectroscopy of III-V materials and heterojunctions grown by low pressure metal organic chemical vapour deposition (O. Acher et al.). Optical evidence of precipitates in arsenic-implanted silicon (A. Borghesi et al.). Polarized IR reflectivity of CdGeAs2 (L. Artús et al.). Raman and IR spectroscopies: a useful combination to study semiconductor interfaces (D.R.T. Zahn et al.). Silicon implantation of GaAs at low and medium doses: Raman assessment of the dopant activation (S. Zakang et al.). Ellipsometric characterization of thin films and superlattices (J. Bremer et al.). Ellipsometric characterization of multilayer transistor structures (J.A. Woollam et al.). Quality of molecular-beam-epitaxy-grown GaAs on Si(100) studied by ellipsometry (U. Rossow et al.). An ellipsometric and RBS study of TiSi2 formation (J.M.M. de Nijs, A. van Silfhout). A new microscope for semiconductor luminescence studies (P.S. Aplin, J.C. Day). Structural analysis of optical fibre preforms fabricated by the sol-gel process (A.M. Elas et al.). Author index.

Book Research in Progress

Download or read book Research in Progress written by and published by . This book was released on 1973 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Microwave Acoustic and Bulk Device Technique Studies

Download or read book Microwave Acoustic and Bulk Device Technique Studies written by Stanford University. Microwave Laboratory and published by . This book was released on 1971 with total page 30 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Low Temperature Electron Irradiation Induced Defects in Gallium Arsenide  Bulk and Surface Acoustic Wave Studies

Download or read book Low Temperature Electron Irradiation Induced Defects in Gallium Arsenide Bulk and Surface Acoustic Wave Studies written by Martin Joseph Brophy (Jr) and published by . This book was released on 1985 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Scientific and Technical Aerospace Reports

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1992 with total page 656 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Nuclear Science Abstracts

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1974 with total page 1756 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Physics Briefs

Download or read book Physics Briefs written by and published by . This book was released on 1989-07 with total page 1314 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Chemical Abstracts

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Technical Abstract Bulletin

Download or read book Technical Abstract Bulletin written by and published by . This book was released on with total page 828 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Stanford University Electronics Research Review

Download or read book Stanford University Electronics Research Review written by and published by . This book was released on 1971 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: Includes brief descriptions of projects, listings of contracts and grant support, and listings of publications.

Book International Aerospace Abstracts

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1982 with total page 820 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Heteroepitaxial Semiconductors for Electronic Devices

Download or read book Heteroepitaxial Semiconductors for Electronic Devices written by G.W. Cullen and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Some years ago it was not uncommon for materials scientists, even within the electronics industry, to work relatively independently of device engi neers. Neither group had a means to determine whether or not the materials had been optimized for application in specific device structures. This mode of operation is no longer desirable or possible. The introduction of a new material, or a new form of a well known material, now requires a close collaborative effort between individuals who represent the disciplines of materials preparation, materials characterization, device design and pro cessing, and the analysis of the device operation to establish relationships between device performance and the materials properties. The develop ment of devices in heteroepitaxial thin films has advanced to the present state specifically through the unusually close and active interchange among individuals with the appropriate backgrounds. We find no book available which brings together a description of these diverse disciplines needed for the development of such a materials-device technology. Therefore, the authors of this book, who have worked in close collaboration for a number of years, were motivated to collect their experiences in this volume. Over the years there has been a logical flow of activity beginning with heteroepi taxial silicon and progressing through the III-V and II-VI compounds. For each material the early emphasis on material preparation and characteriza tion later shifted to an emphasis on the analysis of the device characteristics specific to the materials involved.