Download or read book Structural Optical and Electronic Properties of Amorphous Versus Crystalline Germanium Telluride Films written by Surinder Kumar Bahl and published by . This book was released on 1970 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ultraviolet and X ray Photoemission Studies and Optical Properties of Amorphous and Crystalline Germanium Telluride written by Galen Bruce Fisher and published by . This book was released on 1974 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electronic Structure of Amorphous and Crystalline Germanium Photoemission and Optical Studies written by Terence Mitchell Donovan and published by . This book was released on 1970 with total page 141 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photoemission has been measured in the 1.8 - 11.8 eV spectral range for cleaved single crystal Ge and amorphous Ge films. Cesium was used to lower the photoelectric threshold and extend the measurements for photon energies less than 5 eV for both phases. Similar measurements were made in the 5 - 11.8 eV spectral range on films grown at room temperature (i.e., amorphous films) and then annealed at temperatures below and above the amorphous-crystalline transition temperature. The optical properties for amorphous films have been determined in the 0.1 - 25.0 eV spectral range from a Kramers-Kronig analysis of reflectance data and in the infrared and absorption edge region for films grown on substrates held at temperatures just below the amorphous-crystalline transition temperature. (Author).
Download or read book Electrical and Optical Properties of Amorphous Germanium written by Alton Harold Clark and published by . This book was released on 1967 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Structural Optical and Electronic Properties of Thin Films of Some Tellurium Alloys written by Sutinder Kumar Behal and published by . This book was released on 1977 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 892 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optical and Electronic Properties of Crystallized Silicon Germanium Thin Films for Photovoltaic Applications written by Robert Lechner and published by . This book was released on 2004 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductors written by T. F. Connolly and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: And often on request from the issuing installation. USAEC reports are also available from International Atomic Energy Agency Kaerntnerring A 1010 Vienna, Austria National Lending Library Boston Spa, England Monographs and reports of the National Bureau 01 Standards are for sale by Superintendent of Documents U.S. Government Printing Office Washington, D.C. 20402 Theses, listed as Dissertation Abstracts + number, are available in North and South America from University Microfilms Dissertation Copies P.O. Box 1764 Ann Arbor, Michigan 48106 and elsewhere from University Microfilms, Ltd. St. John's Road Tylers Green Penn, Buckinghamshire England Conlenls Addendum ... xiii 1. Information Centers and Other Services ... 1 2. Journals ... 3 3. Methods of Crystal Growth - Books and Reviews ... 5 4. Semiconductors - General, Reviews, and Bibliographies ... 11 5. 1-V -VI Compounds ... 21 6. li-IV - V2 Compounds ... 23 7. II - V Compounds ... 29 a. General, Reviews, and Bibliographies ... 29 b. Zinc Compounds ... 30 1. Zn3P2" .. . .. . .. . . .. ... .. ... . .. ... . . .. ... .. . . 30 2. ZnAs ... 30 3. ZnSb ... 30 4. Zn Mixed Systems ... 31 c. Cadmium Compounds ... 31 31 1. Cd3P2' ... 2. Cd3As2 ... 31 3. CdSb, Cd3Sb2 ... 33 37 8. li-VI Compounds ... a. General, Reviews, and Bibliographies ... ... 37 ... b. Zinc Compounds ... . ... ... 39 ... 1. ZnO ... 39 Preparation and Properties ... 39 Electrical Properties ... ... 41 ... Optical Properties ... ... 45 ... Physical Properties and Structure ... ... 47 ... 2. ZnS ... 49 3. ZnSe ... 52 4. ZnTe ... ' ... 54 5. Zn Mixed Systems. ... ... 55 ... 55 c. Cadmium Compounds ... 55 1. CdS ... 2. CdSe ... 60 3. CdTe ... 61 4. CdTernaries ... ... 62 ... d. Mercury Compounds ... ... . 64 ...
Download or read book Research in Progress written by and published by . This book was released on 1971 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Properties of Glasses Glass ceramics and Amorphous Solids written by International Commission on Glass. Sub-committee AIX. and published by . This book was released on 1977 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Comprehensive Dissertation Index written by and published by . This book was released on 1973 with total page 964 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ferroelectric Materials and Ferroelectricity written by T. F. Connolly and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is a joint effort of the Research Materials Information Center (RMIC) of the Solid State Division at Oak Ridge National Laboratory and the Libraries and Information Systems Center at Bell Telephone Laboratories (BTL) Murray Hill, N. J. The Research Materials Information Center has, since 1963, been answering inquiries on the avail ability, preparation, and properties of inorganic solid-state research materials. The preparation of bibliographies has been essential to this function, and the interest in ferroelectrics led to the compila tion of the journal and report literature on that subject. The 1962 book Ferroelectric Crystals, by Jona and Shirane, was taken as a cutoff point, and all papers through mid-1969 received by the Center have been included. The Libraries and Information Systems Center of BTL has, over a period of years, developed a proprie tary package of computer programs called BELDEX, which formats and generates indexes to biblio graphic material. This group therefore undertook to process RMIC's ferroelectric references by BELDEX so that both laboratories could have the benefit of an indexed basic bibliography in this important research area.
Download or read book Metals Abstracts written by and published by . This book was released on 1980 with total page 1290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book NBS Special Publication written by and published by . This book was released on 1968 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metal templated Crystallization of Germanium for Optoelectronic Applications written by Yanying Li and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Crystalline germanium (Ge) structures, such as nanowires (NWs) and thin films, have been investigated intensively in recent years due to their unique properties emerging from germanium's large absorption coefficient, high carrier mobilities, lattice match with photovoltaic material GaAs, and compatibility with standard silicon-processing technology. The dynamics of electrons, photons, and phonons in crystalline Ge strongly depend on the geometrical factors of the different device structures in which it is fabricated. A better understanding of Ge growth mechanisms in different nano- and micro-structures, and their connection to fundamental optical and electronic properties is essential in order to better exploit Ge in the design of nanoscale optoelectronic devices. However, such investigations in semiconductor NWs and thin films are limited and have mainly focused on a small set of crystal growth processes. This thesis focuses on the investigations of both the synthesis and properties of two types of structures, NWs and poly-crystalline thin films. In order to achieve large-scale arrays of relatively defect-free vertically aligned NWs, it is essential to understand the spontaneous kinking during growth. In Chapter 2, two fundamental mechanisms underlying the spontaneous kinking of Ge NWs during vapor-liquid-solid (VLS) growth will be discussed. The diameter of NWs, sidewall facets of NWs, and the capillary stability of the Au-Ge catalyst droplet play important roles in spontaneous kinking. 3-D phase field model simulations by our collaborators are combined with experimental results to confirm the kinking mechanisms. The high electron and hole mobilities and high optical absorption in visible and IR wavelengths of Ge makes it a promising candidate for ultrafast optoelectronic device applications. There are few investigations of arrays of Ge NWs in this context, and most such studies have focused on a qualitative analysis of relevant phenomena. Chapter 3-5 will present a study of ultrafast optical, acoustic and electronic properties of vertically aligned 111 Ge NW arrays through ultrafast, optical pump-probe transient absorption measurements on dense arrays of single-crystal and relatively uniform-diameter Ge NWs. Two coexisting physical phenomena governing the spectral and temporal dependence of the detected probe signal will be discussed. In Chapter 4, ultrafast dynamics of electrons and holes, especially their strong dependence on NW diameters and photoexcitation powers, are investigated. The different interaction of electrons and holes with surface states of Ge NWs will be demonstrated, thereby leading to different methods to extend electron and hole lifetime in such nanostructures. Chapter 6 will first introduce a method to produce poly-crystalline Ge (poly-Ge) thin films via low-temperature Al-induced-crystallization. Electron backscatter diffraction (EBSD), Hall mobility, and photoluminescence (PL) measurements of the poly-Ge films and poly-GaAs films epitaxially deposited on these poly-Ge templates indicate that templates with relatively large Ge crystallites (up to 124 um2) are a low-cost alternative to single-crystal Ge wafers, albeit exhibiting somewhat reduced performance. The poly-Ge templates can function well for seeding epitaxial growth of overlying Ge nanostructures or GaAs thin film absorbers for application in photodetectors or solar cells.
Download or read book The Structural and Optical Properties of Amorphous Germanium written by and published by . This book was released on 1973 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Effects of Native and Light Induced Defects in the Optical and Electronic Properties of Hydrogenated Amorphous Silicon Germanium a SiGe H Alloy Thin Films written by Medine Elif Dönertaş Yavaş and published by . This book was released on 2005 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hydrogenated amorphous silicon-germanium alloy thin films (a-SiGe:H) of various germanium concentrations, are potential candidates meeting the requirements of high efficiency stacked solar cells and optoelectronic devices where a certain bandgap is necessary. In this thesis to obtain reliable information about the native and light induced defect states present in a-SiGe:H alloy thin films of various germanium concentrations SSPC, DBP, transmission spectroscopy and PDS techniques have been used. A procedure based on Ritter Weiser optical formulation has been applied to calculate fringe free absolute absorption coefficient spectra of a-SiGe:H alloy thin films of various Ge% from the yield DBP and simultaneously measured transmission signals for the first time. The results have been compared with those independently measured by PDS method.In the annealed state the effects of native defect states in a-SiGe:H alloy thin films of various Ge% have been investigated. For the a-SiGe:H alloy films with Ge concentration in the range of 10% to 30%, hntn-products for the photogenerated free electrons is the highest, therefore they serve as the best photoconductive absorber layer in the multijunction solar cells. The effect of Ge content in amorphous silicon network clearly indicates a systematic decrease in the bandgap with increasing Ge content. The E0v values are almost constant around 55meV for alloying up to 40% Ge. Finally the changes in the defect density present in the bandgap of alloy films are inferred from the a(1.0eV) measured by both PDS and low bias light DBP spectrum. The difference between PDS and low bias DBP spectra is attributed to the underlying physics of these methods. The best film with lowest defect density can be prepared with alloying Ge in the range from 10% to 40% Ge.In the light soaked state, samples were left under white light illumination (15 suns) for determined time intervals. SSPC measurements indicate that all samples exhibit certain degree of degradation in the magnitude of sph and hntn products. The rate of a(1.0 eV) decreases as Ge% increases in the light soaked state. Higher Ge content films (50%, 75%) show almost no degradation in sub-bandgap absorption. As the degradation slope of a(hn) and 1/hntn product are not same for all samples it can be inferred that subgap absorption and photoconductivity measurements are not controlled by the same set of defects present in the bandgap.
