Download or read book Structural Characterization of II VI and III V Compound Semiconductor Heterostructures and Superlattices written by Lu Ouyang and published by . This book was released on 2012 with total page 125 pages. Available in PDF, EPUB and Kindle. Book excerpt: The research described in this dissertation has involved the use of transmission electron microcopy (TEM) to characterize the structural properties of II-VI and III-V compound semiconductor heterostructures and superlattices. The microstructure of thick ZnTe epilayers (~2.4 m) grown by molecular beam epitaxy (MBE) under virtually identical conditions on GaSb, InAs, InP and GaAs (100) substrates were compared using TEM. High-resolution electron micrographs revealed a highly coherent interface for the ZnTe/GaSb sample, and showed extensive areas with well-separated interfacial misfit dislocations for the ZnTe/InAs sample. Lomer edge dislocations and 60o dislocations were commonly observed at the interfaces of the ZnTe/InP and ZnTe/GaAs samples. The amount of residual strain at the interfaces was estimated to be 0.01% for the ZnTe/InP sample and -0.09% for the ZnTe/GaAs sample. Strong PL spectra for all ZnTe samples were observed from 80 to 300 K. High quality GaSb grown by MBE on ZnTe/GaSb (001) virtual substrates with a temperature ramp at the beginning of the GaSb growth has been demonstrated. High-resolution X-ray diffraction (XRD) showed clear Pendellösung thickness fringes from both GaSb and ZnTe epilayers. Cross-section TEM images showed excellent crystallinity and smooth morphology for both ZnTe/GaSb and GaSb/ZnTe interfaces. Plan-view TEM image revealed the presence of Lomer dislocations at the interfaces and threading dislocations in the top GaSb layer. The defect density was estimated to be ~1 x107/cm2. The PL spectra showed improved optical properties when using the GaSb transition layer grown on ZnTe with a temperature ramp. The structural properties of strain-balanced InAs/InAs1-xSbx SLs grown on GaSb (001) substrates by metalorganic chemical vapor deposition (MOCVD) and MBE, have been studied using XRD and TEM. Excellent structural quality of the InAs/InAs1-xSbx SLs grown by MOCVD has been demonstrated. Well-defined ordered-alloy structures within individual InAs1-xSbx layers were observed for samples grown by modulated MBE. However, the ordering disappeared when defects propagating through the SL layers appeared during growth. For samples grown by conventional MBE, high-resolution images revealed that interfaces for InAs1-xSbx grown on InAs layers were sharper than for InAs grown on InAs1-xSbx layers, most likely due to a Sb surfactant segregation effect.
Download or read book Ii vi Semiconductor Compounds written by Mukesh Jain and published by World Scientific. This book was released on 1993-05-04 with total page 603 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contents: X-Ray Characterisation of II-VI Semiconductor Materials (D Gao et al.)Electronic Structure of II-VI Semiconductors and Their Alloys (S-H Wei)Radiative Recombination Processes in Rare Earth Doped II-VI Materials (M Godlewski et al.)Nonlinear Optical Properties of Heavily Doped CdS (U Neukirch)Nanostructures of Broad Gap (II,Mn) VI Semiconductors (W Heimbrodt & O Goede)Co-Based II-VI Semimagnetic Semiconductors (A Twardowski et al.)Photoluminescence and Raman Scattering of ZnSe-ZnTe Strained Layer Superlattices (K Kumazaki)Novel Electronic Processes in Mercury-Based Superlattices (J R Meyer et al.)Strain, Pressure and Piezoelectric Effects in Strained II-VI Superlattices and Heterostructures (E Anastassakia)Electronic Structures of Strained II-VI Superlattices (T Nakayama)Devices and Applications of II-VI Compounds (S Colak)Solar Cells Based on II-VI Semiconductors (H Uda)ZnSe and Its Applications for Blue-Light Laser Diodes (M Pessa & D Ahn)Molecular Beam Epitaxy of HgCdTe for Electro-Optical Infrared Applications (J M A Cortés)and other papers Readership: Condensed matter physicists and electronic engineers. keywords:
Download or read book Compound Semiconductor Strained Layer Superlattices written by R.M. Biefeld and published by Trans Tech Publications Ltd. This book was released on 1989-01-01 with total page 237 pages. Available in PDF, EPUB and Kindle. Book excerpt: -Effect of Internal Piezoelectric Fields on the Electronic Structure and Optical Properties of Strained-Layer Superlattices -Metastability in Semiconductor Strained-Layer Structures -The Morphology of MOCVD-Grown Semiconductor Multilayers -Electrical Transport Studies of InGaAs/GaAs Strained-Layer Quantum-Well Structures -Device Structures Based on GaAsP/InGaAs Strained Layer Superlattices and Their Stability -The Preparation and Infrared Properties of In (AsSb) Strained-Layer Superlattices -Ion Implantation of III-V Compound Semiconductor Strained-Layer Semiconductors Systems -II-VI Strained-Layer Semiconductor Superlattices
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Emil S. Božin and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 48 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth and Structural Characterization of Novel Semiconductor Heterostructures written by Jane Guizhen Zhu and published by . This book was released on 1991 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electronic Structure and Optical Properties of III V and II VI Semiconductor Superlattices written by Neil Fraser Johnson and published by . This book was released on 1989 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by S. Sanguinetti and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Compound Semiconductors written by Paul H. Holloway and published by Elsevier. This book was released on 1996-12-31 with total page 937 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.
Download or read book Mechanical Properties of Some III V and II Vi Semiconductor Alloys written by Rangaswamy Navamathavan and published by LAP Lambert Academic Publishing. This book was released on 2011-12 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors, the major area of research in materials science, have offered solutions to several important technological problems and provided many devices for day to day applications. Development in novel semiconductor materials such as heterostructure systems and the ever-diminishing size of devices are producing an explosion of interest and activity in the field of semiconductor materials and devices. The characterization of epitaxial layers and their surfaces have benefited a lot from the enormous progress of micro and nanomechanical analysis techniques. In particular, the dramatic improvement of the structural quality of semiconductor materials results from the level of sophistication achieved with such analysis techniques. First of all, micromechanical technique is nondestructive and its sensitivity has been improved to such an extent that nowadays the epilayer analysis can be performed on layers with thicknesses ranging on the atomic scale. Thus, this book addresses some of the collective works on III-V semiconductors which could be to be extremely important from a technological point of view, i.e., for the surveillance of modern semiconductor processes.
Download or read book Analytical Techniques for the Characterization of Compound Semiconductors written by G. Bastard and published by Elsevier. This book was released on 1991-07-26 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.
Download or read book Compound Semiconductor Strained layer Superlattices written by Robert M. Biefeld and published by . This book was released on 1989 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: Coverage includes: ion implantation; semiconductor characterization; and gallium arsenide.
Download or read book Structural and Optical Properties of II VI and III V Compound Semiconductors written by Jingyi Huang and published by . This book was released on 2013 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation is on the study of structural and optical properties of some III-V and II-VI compound semiconductors. The first part of this dissertation is a study of the deformation mechanisms associated with nanoindentation and nanoscratching of InP, GaN, and ZnO crystals. The second part is an investigation of some fundamental issues regarding compositional fluctuations and microstructure in GaInNAs and InAlN alloys. In the first part, the microstructure of (001) InP scratched in an atomic force microscope with a small diamond tip has been studied as a function of applied normal force and crystalline direction in order to understand at the nanometer scale the deformation mechanisms in the zinc-blende structure. TEM images show deeper dislocation propagation for scratches along 110 compared to 100. High strain fields were observed in 100 scratches, indicating hardening due to locking of dislocations gliding on different slip planes. Reverse plastic flow have been observed in 110 scratches in the form of pop-up events that result from recovery of stored elastic strain. In a separate study, nanoindentation-induced plastic deformation has been studied in c-, a-, and m-plane ZnO single crystals and c-plane GaN respectively, to study the deformation mechanism in wurtzite hexagonal structures. TEM results reveal that the prime deformation mechanism is slip on basal planes and in some cases, on pyramidal planes, and strain built up along particular directions. No evidence of phase transformation or cracking was observed in both materials. CL imaging reveals quenching of near band-edge emission by dislocations. In the second part, compositional inhomogeneity in quaternary GaInNAs and ternary InAlN alloys has been studied using TEM. It is shown that exposure to antimony during growth of GaInNAs results in uniform chemical composition in the epilayer, as antimony suppresses the surface mobility of adatoms that otherwise leads to two-dimensional growth and elemental segregation. In a separate study, compositional instability is observed in lattice-matched InAlN films grown on GaN, for growth beyond a certain thickness. Beyond 200 nm of thickness, two sub-layers with different indium content are observed, the top one with lower indium content.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ii Vi Semiconductor Blue Green Light Emitters written by and published by Academic Press. This book was released on 1997-03-13 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume provides one of the first comprehensive reviews combining recent breakthroughs in blue/green semiconductor lasers based on II-VI materials and fundamentally important issues about the development and extension of these lasers to commercial applications. These lasers are on the cutting-edge of technology and could revolutionize areas such as optical information storage and color displays in the next few years.An important focus of this book is on the recent laboratory development of an entirely new class of diode lasers, based on a different family of semiconductor materials, which emit at much shorter wavelengths in the green and blue portion of the spectrum.These new and exciting developments in optoelectronics, which are still undergoing laboratory testing, have the potential of providing a major increase in storage capacity over current CD technology.Besides applications in high-density digital optical storage, other possible aplications for the compact blue-green lasers will be in areas ranging from flat panel displays to multicolor printing to medical diagnostics. - Details practical issues of the growth of laser structures by molecular beam epitaxy by pioneers in the industry - Explains how the barriers of doping and electrical contact were overcome by using wide bandgap II-VI semiconductors - Documents thirty years of research
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of III V Compound Semiconductor Heterostructures Grown by Metalorganic Chemical Vapor Deposition written by Jongryoul Kim and published by . This book was released on 1991 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-V compound semiconductor materials have had much attention because of their application to high speed electronic and optoelectronic devices. For achieving these purposes, it is required to produce high quality samples with uniform layer thickness, no defects, and abrupt interfaces. For this metalorganic chemical vapor deposition (MOCVD) is one of the most important growth methods. In this study, transmission electron microscopy (TEM) was used for the characterization of epilayer structures grown by the MOCVD technique. High resolution electron microscopy (HREM), the two beam technique and the convergent beam technique (CBED) were used. Cross sectional, plan view and cleavage samples using the ion milling or chemical etching method were used for TEM sample preparation. Tetragonal distortion occurs in the strained layer superlattice (SLS). Misfit dislocations are found above a certain layer thickness (critical thickness) and the critical thickness is related to the total strain state in SLS. Composition measurements of In$sb{rm 1-x}$Ga$sb{rm x}$As in SLS using TEM has restrictions because of the misfit strain and the similarity of atomic scattering factors of Ga and In. But a low In concentration layer can be determined from the (002) dark field intensity ratio. The interface quality of heterostructures can be distinguished by 5 beam, 9 beam or more conditions at a (100) zone axis. Digital vector pattern recognition was found to be a powerful tool for quantization of interface quality.
Download or read book Properties of Impurity States in Superlattice Semiconductors written by C.Y. Fong and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: A NATO workshop on "The Properties of Impurity States in Semiconductor Superlattices" was held at the University of Essex, Colchester, United Kingdom, from September 7 to 11, 1987. Doped semiconductor superlattices not only provide a unique opportunity for studying low dimensional electronic behavior, they can also be custom-designed to exhibit many other fascinating el~ctronic properties. The possibility of using these materials for new and novel devices has further induced many astonishing advances, especially in recent years. The purpose of this workshop was to review both advances in the state of the art and recent results in various areas of semiconductor superlattice research, including: (i) growth and characterization techniques, (ii) deep and shallow im purity states, (iii) quantum well states, and (iv) two-dimensional conduction and other novel electronic properties. This volume consists of all the papers presented at the workshop. Chapters 1-6 are concerned with growth and characterization techniques for superlattice semiconductors. The question of a-layer is also discussed in this section. Chapters 7-15 contain a discussion of various aspects of the impurity states. Chapters 16- 22 are devoted to quantum well states. Finally, two-dimensional conduction and other electronic properties are described in chapters 23-26.
