Download or read book Structural and Magnetic Investigation of Dilute Magnetic Semiconductors Based on GaN and ZnO written by Tom Kammermeier and published by . This book was released on 2010 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dilute Magnetic Semiconductors Based on Gan and Zno written by Tom Kammermeier and published by Sudwestdeutscher Verlag Fur Hochschulschriften AG. This book was released on 2010-05 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt: The two wide band gap dilute magnetic semiconductors (DMS) Gd: GaN and Co: ZnO are among the most favored materials for spintronic applications. Despite intense research efforts during the last years, the origin of the magnetic order is still under debate. This work reports structural and magnetic investigations on these DMS materials employing several complementary techniques. The X-ray linear dichroism (XLD) has been used to gain element-specific insight into the local structure of dopants and cations. X-ray diffraction (XRD) has resulted in information about the global structural properties. Magnetic characterization by superconducting quantum interference device (SQUID) has been complemented by electron spin resonance (ESR) and X-ray magnetic circular dichroism (XMCD). This compilation of different techniques has yield new insight in the complex magnetic behavior of these wide band gap dilute magnetic semiconductor
Download or read book First Principle Vs Experimental Design of Diluted Magnetic Semiconductors written by Omar Mounkachi and published by Nova Science Publishers. This book was released on 2018 with total page 277 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent discoveries have given rise to a new class of electronics known as "spin electronics" or "spintronics," which uses the electron spin rather than its charge to create polarized currents. Spintronics is currently experiencing an extraordinary development with the manufacture of nanoscale devices based on ferromagnetic materials and semiconductors. Their applications are numerous, ranging from recording, electronics, and optoelectronics to quantum information. Spintronics is a new generation of electronics that has brought and continues to bring a lot of progress to information storage; this is due to the discovery of new materials with new functionalities and multiple applications. The discovery of giant magnetoresistance (GMR) in 1988 by Albert Fert and Peter Grünberg (receiver of the Nobel Prize in Physics in 2007) is considered a starting point of spintronics. GMR is based on the variation of the electric current in the presence of a magnetic field. The spintronics has made important contributions to the miniaturization desired for electronics; it uses nanometric components for processing and storing information. However, the limits of miniaturization on a nanometric scale are known, and it is imperative to develop new ways and new materials to exceed those limits. The most desired properties for these materials are high spin polarization, modular magnetic properties by an electric field and a long lifetime of the spin polarization. Among the new promising materials, we cite the following: Diluted magnetic semiconductors, which give new magnetic properties of conventional semiconductors, functional oxides (including the semi-metals and multiferroic metals) and organic semiconductors. The main theoretical challenge in this area is to understand how the macroscopic magnetic behavior observed results from interactions of a large number of degrees of microscopic freedom. In these systems the disorder is an essential parameter of magnetic phenomena, and due to random locations of impurity atoms it can lead to a total physical difference from the observed absence. There has been considerable recent advances in the design of these materials as diluted magnetic semiconductors (DMS, or diluted magnetic semiconductors), and a number of semiconductors were investigated as II-VI group and III-V group doped compounds, with transition metals substituting their original cations. There are several different theoretical approaches to study these magnetic materials. The ab-initio approach starts from the Schrödinger equation to simulate a given material. Such an approach is essential to determine the parameters and microscopic properties of such a system. In this book, the authors analyzed the electronic structure of magnetic semiconductors diluted in the case of ZnO, GaN, SnO2, TiO2, MgH2, EuO and EuN doped RENs (RE=GdN, DyN and HoN). The authors focused on magnetic, optical and exchange mechanisms which control the ferromagnetism in these systems. The purpose of this book is to propose some ideas to answer the most important question in material science for semiconductor spintronics, primarily considering how room-temperature ferromagnetism in DMS can be realized. Additionally, the correlation between first principle and experimental design to see how properties of yet-to-be-synthesized materials can be predicted is discussed.
Download or read book Relationship Between Structure and Magnetic Behaviour in ZnO Based Systems written by Clara Guglieri Rodríguez and published by Springer. This book was released on 2015-06-03 with total page 155 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work studies the magnetic behavior of ZnO nanoparticles capped with different organic molecules and showing room-temperature ferromagnetism (RTFM). Of particular significance is the combination of element-specific X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) techniques, which demonstrates the intrinsic occurrence of RTFM in these systems and indicates that it is not related to the 3-D states of the metallic cation but is relayed along the conduction band of the semiconductor. The discovery of room-temperature ferromagnetism (RTFM) in semiconductors holds great promise in future spintronics technologies. Further results presented here include O K-edge XMCD studies, which demonstrate that the oxygen ions have a ferromagnetic response in these ZnO-based systems, providing the first direct support for claims regarding the appearance of oxygen ferromagnetism in oxide semiconductors at the nanoscale.
Download or read book Investigations of Structural Electrical Optical and Magnetic Properties of P and N type ZnO based Diluted Magnetic Semiconductor written by 李榮銓 and published by . This book was released on 2011 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defect Induced Magnetism in Oxide Semiconductors written by Parmod Kumar and published by Elsevier. This book was released on 2023-05-26 with total page 738 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect-Induced Magnetism in Oxide Semiconductors provides an overview of the latest advances in defect engineering to create new magnetic materials and enable new technological applications. First, the book introduces the mechanisms, behavior, and theory of magnetism in oxide semiconductors and reviews the methods of inducing magnetism in these materials. Then, strategies such as pulsed laser deposition and RF sputtering to grow oxide nanostructured materials with induced magnetism are discussed. This is followed by a review of the most relevant postdeposition methods to induce magnetism in oxide semiconductors including annealing, ion irradiation, and ion implantation. Examples of defect-induced magnetism in oxide semiconductors are provided along with selected applications. This book is a suitable reference for academic researchers and practitioners and for people engaged in research and development in the disciplines of materials science and engineering. - Reviews the magnetic, electrical, dielectric and optical properties of oxide semiconductors with defect-induced magnetism - Discusses growth and post-deposition strategies to grow oxide nanostructured materials such as oxide thin films with defect-induced magnetism - Provides examples of materials with defect-induced magnetism such as zinc oxide, cerium dioxide, hafnium dioxide, and more
Download or read book Optical Investigation of Transition Metal Implanted Wide Band Gap Semiconductors written by Brian P. Feller and published by . This book was released on 2005 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Experimental Electron Density Dilute Magnetic Semiconducting Materials written by Ramachandran Saravanan and published by LAP Lambert Academic Publishing. This book was released on 2010-08 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: There are many techniques that can help evolving the minute details in the spintronics materials, but X- ray diffraction technique can give fine details of these materials in the form of charge density picture and local structure. Charge density results can be analyzed qualitatively and quantitatively for the type of bonding and also for the magnetic behavior involved. Hence, a study on these materials using experimental X-ray diffraction information is inevitable for the better understanding of local structure and magnetism. This monograph deals with the technologically important diluted magnetic semiconductors (DMS), zinc oxide based diluted magnetic semiconductors and manganites (LSMO) for their local and average structures, charge density etc.
Download or read book Nanostructured Metal Oxides and Devices written by M. K. Jayaraj and published by Springer Nature. This book was released on 2020-04-16 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book primarily covers the fundamental science, synthesis, characterization, optoelectronic properties, and applications of metal oxide nanomaterials. It discusses the basic aspects of synthetic procedures and fabrication technologies, explains the related experimental techniques and also elaborates on the current status of nanostructured oxide materials and related devices. Two major aspects of metal oxide nanostructures – their optical and electrical properties – are described in detail. The first five chapters focus on the optical characteristics of semiconducting materials, especially metal oxides at the nanoscale. The following five chapters discuss the electrical properties observed in metal oxide-based semiconductors and the status quo of device-level developments in a variety of applications such as sensors, transistors, dilute magnetic semiconductors, and dielectric materials. The basic science and mechanism behind the optoelectronic phenomena are explained in detail, to aid readers interested in the structure–property symbiosis in semiconducting nanomaterials. In short, the book offers a valuable reference guide for researchers and academics in the areas of material science and semiconductor technology, especially nanophotonics and electronics.
Download or read book Oxide and Nitride Semiconductors written by Takafumi Yao and published by Springer Science & Business Media. This book was released on 2009-03-20 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a unique book devoted to the important class of both oxide and nitride semiconductors. It covers processing, properties and applications of ZnO and GaN. The aim of this book is to provide the fundamental and technological issues for both ZnO and GaN.
Download or read book Structural and Magnetic Properties of Zno Doped with Mn and Co written by Vijay Kumar Sharma and published by LAP Lambert Academic Publishing. This book was released on 2010-12 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: ZnO based Diluted magnetic semiconductors (DMSs) have attracted broad interest for their promise functionalities in spintronics based devices. In this book, we explored the effect of different synthesis techniques (solid-state, sol-gel and chemical vapor deposition (CVD) methods) and synthesis parameters (sintering temperature, doping concentration, annealing atmosphere) on the structural and magnetic properties of TM (Mn, Co) doped ZnO. The effect of Al/Sb codoping on the magnetic properties of ZnMnO and ZnCoO were studied. We also explored the structural, optical and magnetic properties of nanowires and nanorods of Mn doped ZnO for their potential in spintronics based devices. From the experimental results presented in this book, it is concluded that defects like oxygen vacancies, zinc vacancies etc. in the samples are important for room temperature ferromagnetism in ZnO based DMSs.
Download or read book Effect of Strain Due to Substrates on Mn doped ZnO Dilute Magnetic Semiconductor Thin Films written by Srikanth Manchiraju and published by . This book was released on 2007 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book On the Growth Magnetic Properties and Magneto optical Studies of ZnO Based Dilute Magnetic Semiconductors and Magnetite written by Abbas Mokhtari and published by . This book was released on 2008 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advanced Functional Materials written by and published by Newnes. This book was released on 2012-12-31 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book deals with functional materials that are in the frontiers of current materials science and technology research, development and manufacture. The first of its kind, it deals with three classes of materials, (1) magnetic semiconductors, (2) multiferroics, and (3) graphene. Because of the wide popularity of these materials there is a strong need for a book about these materials for graduate students, new researchers in science and technology, as well as experienced scientists and technologists, technology based companies and government institutes for science and technology. The book will provide this broad audience with both theoretical and experimental understanding to help in technological advances in the development of devices and related new technologies based on these very interesting and novel materials. - Covers both the theoretical and experimental aspects of advanced functional materials, which are important for use in a number of rapidly developing novel technological devices - Includes excellent coverage of three of the leading advanced functional materials - Edited by a leading expert at the forefront of advanced functional materials research
Download or read book Nanoelectronics written by and published by Elsevier. This book was released on 2018-10-05 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoelectronics: Devices, Circuits and Systems explores current and emerging trends in the field of nanoelectronics, from both a devices-to-circuits and circuits-to-systems perspective. It covers a wide spectrum and detailed discussion on the field of nanoelectronic devices, circuits and systems. This book presents an in-depth analysis and description of electron transport phenomenon at nanoscale dimensions. Both qualitative and analytical approaches are taken to explore the devices, circuit functionalities and their system applications at deep submicron and nanoscale levels. Recent devices, including FinFET, Tunnel FET, and emerging materials, including graphene, and its applications are discussed. In addition, a chapter on advanced VLSI interconnects gives clear insight to the importance of these nano-transmission lines in determining the overall IC performance. The importance of integration of optics with electronics is elucidated in the optoelectronics and photonic integrated circuit sections of this book. This book provides valuable resource materials for scientists and electrical engineers who want to learn more about nanoscale electronic materials and how they are used. - Shows how electronic transport works at the nanoscale level - Demonstrates how nanotechnology can help engineers create more effective circuits and systems - Assesses the most commonly used nanoelectronic devices, explaining which is best for different situations
Download or read book Handbook of Crystal Growth written by Tom Kuech and published by Elsevier. This book was released on 2014-11-02 with total page 1384 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume IIIA Basic TechniquesHandbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures.Volume IIIB Materials, Processes, and TechnologyHandbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials.Volume IIIA Basic Techniques - Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. - Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth - Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology - Describes atomic level epitaxial deposition and other low temperature growth techniques - Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials - Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials
Download or read book Study of the Dilute Magnetic Semiconductor Ga subscript 1 x Mn subscript X P and Undoped GaP with Hard X ray Photoemission and Angle resolved Photoemission written by Armela Keqi and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The invention of the transistor revolutionized the world by allowing advances that could hardly be imagined only a few decades earlier. Their pervasiveness in almost every imaginable device today, ranging from wristwatches to large scale industrial automation components, shows just how significant a building block of the modern world transistors are. It also underlines the significance of any potential further advances in semiconductor technology. An emerging development in this regard is the addition of magnetic properties to semiconductors, which, among other things, has the potential of enabling a significant increase in computer storage capacity as well as a corresponding cost decrease. The ability to combine the nonvolatile nature of magnetic materials with the fast speeds typical of semiconductor devices could provide a path to a dramatic improvement of storage technology. A new class of materials suggested to have both semiconductor and magnetic properties is known as dilute magnetic semiconductors (DMS). The main focus of this thesis is the study of the dilute magnetic semiconductor of the group III-V, Ga(Mn)P, which consists of GaP that is doped with metal Manganese. Ga(Mn)P is closely related to Ga(Mn)As which has received a lot of attention in the materials science community. There are, however, important differences between Ga(Mn)P and Ga(Mn)As which we will discuss in this thesis. The electronic structure of three different Ga[subscript 1-x]MnxP DMSs is investigated, with x representing the percent dopant of Mn, which is substitutional to Ga. The three dopant samples are Ga0.98Mn0.02P, Ga0.968Mn0.032P, and Ga0.959Mn0.041P and they are compared to the undoped GaP sample.The experiments reported in this thesis were performed at a number of synchrotron facilities, namely the Advanced Light Source (ALS) at Berkeley (USA), SOLEIL in Paris (France), and SPring-8 at Hyogo (Japan). All these facilities are third-generation synchrotrons. Hard X-ray photoelectron spectroscopy (HXPS) and hard X-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV, were the methods used to study the electronic structure of the samples. The advantage of hard x-ray photoelectron spectroscopy is the ability to probe deeper into the sample, therefore measuring bulk properties of the materials. In order to understand the role of the Mn dopant in the emergence of ferromagnetism in our samples, we present both experimental data and theoretical calculations. Both core-level spectra and angle-resolved or angle-integrated valence spectra of Ga0.98Mn0.02P and the undoped GaP are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between Ga0.98Mn0.02P and GaP in both angle-resolved and angle-integrated valence spectra. The Ga0.98Mn0.02P bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host GaP crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations, and a prior HARPES study of Ga0.97Mn0.03As and GaAs (Gray et al. Nature Materials 11, 957 (2012)), demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in doping both GaAs and GaP. Furthermore, additional HXPS experimental results for all three dopant concentrations at two different photon energies, 2550 eV and 2905 eV, show a detailed study of various core-levels. Ga 2p, Ga 3d, P 2p, Mn 2p, and Mn 3s are the main core-levels analyzed and all their features such as spin-orbit splitting, multiplet splitting, and satellite are explained. Experimental data is compared to theoretical calculations using the simulation of electron spectra of surface analysis (SESSA) program.
