Download or read book Structural and Electrical Characterization of Heterostructures Suitable for Future Nanoscale CMOS Devices written by Tobias Myrberg and published by . This book was released on 2004 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nanoscale Structural Characterization of Oxide and Semiconductor Heterostructures written by Joonkyu Park and published by . This book was released on 2018 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: According to a recent report from International Technology Roadmap for Semiconductors (ITRS), semiconductor industry based on silicon Complementary metal-oxide-semiconductor (CMOS) technology is facing challenges in terms of making the device faster with higher density and lower power consumption. To overcome the challenges, various methodologies are attempted using different state variables instead of electric charges, for example, polarization, phase states, and electron spin information. Different materials can also be chosen instead of silicon, for example, carbon, complex metal oxides in 1D or 2D nanostructure formations. A different concept of operating devices is also another option, for example, single electron transistors, spintronics, and quantum electronics. A tremendous number of stages during microfabrication manufacturing for integrated circuits consist of a series of deposition and etching processes. During these processes, unknown problems can arise from the design of their structural geometry. For example, unwanted strain distribution from the electrode patterns can change the electric properties of underlying materials regarding the decrease in charge carrier mobility or increase in leakage current in dielectrics, which all occur in nanoscale. So, it is important to understand the effects of structural phenomena on the electronic properties of materials using nanoscale characterization. The first work shows the changes in electronic property in Si quantum dot devices fabricated on Si/SiGe heterostructure is discussed. The electrode deposition process on the heterostructure surface is necessary for the device operation, but the electrodes also induce external nanoscale strain fields. These strain fields are transferred to the substrate materials via electrode edges and change electronic band structure. The magnitudes of the strain and their impact on changing the band structure are studied. In the second project, the alignment of ferroelectric polarization nanodomains in PbTiO3/SrTiO3 (PTO/STO) superlattice heterostructures is discussed. The PTO/STO nanostructure was created using a focused-ion beam technique. The domain alignment was observed using the x-ray nanodiffraction. A thermodynamic theoretical approach calculates the free energy density of the system to understand the origin of domain alignment. In the final project, the origin of photoinduced domain transformation in PTO/STO superlattices is discussed. Charged carriers are excited by the above-bandgap optical illumination, and transported by the internal electric fields arising from depolarization fields. These photoexcited charge carriers eventually screen the depolarization fields, and the initial striped nanodomain patterns transform to a uniform polarization state. After the end of illumination, the striped nanodomains patterns recover for a period of seconds at room temperature. The transformation time depends on the optical intensity, and the recovery time depends on the temperature. A charge trapping model with a theoretical calculation reveals that the charge trapping is a dominant process for the domain transformation, and the de-trapping process is for the recovery. Simulated domain intensity changes are in good agreements with the X-ray diffraction data.

Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Newnes. This book was released on 2013-04-11 with total page 829 pages. Available in PDF, EPUB and Kindle. Book excerpt: Characterization of Semiconductor Heterostructures and Nanostructures is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. An additional chapter is devoted to ab initio modeling. The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples. The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essential reference in the much broader, and extremely hot, field of Nanotechnology. Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures Most of the chapters are authored by scientists that are world-wide among the top-ten in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures

Download or read book Characterization of Structural and Electronic Properties of Nanoscale Semiconductor Device Structures Using Cross sectional Scanning Probe Microscopy written by Paul Arthur Rosenthal and published by . This book was released on 2002 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Quantitative Mobility Spectrum Analysis of III V Heterostructures on Silicon written by Thiess H. Cunningham and published by . This book was released on 2012 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continued scaling of Si CMOS devices as had been practiced by the electronics industry has reached the point where, alternative solutions to the conventional MOSFET device need to be found. There is widespread consensus that high mobility III-V channel materials with their high electron mobilities and velocities will enable increased performance and reduced power consumption at scaled geometries. While the industry is currently targeting the 11 nm technology node for their introduction, there are significant challenges remaining before high mobility materials can be adopted for high volume manufacturing (HVM). One of the requirements is that these materials need to be epitaxially integrated onto silicon and be able to withstand the processing environment in the various CMOS modules. The challenge is to characterize and eventually to minimize the defects in these heterostructures when grown on silicon substrates due to the differences in lattice constants. Characterization of these structures is necessary to determine whether there are any roadblocks to device operation. In this thesis, the electrical characterization of MBE grown III-V InGaAs/InAlAs heterostructures on silicon and native InP substrates using variable field Hall measurements at temperatures ranging from 10K-room temperature in magnetic fields from 0-9T will be presented. From these measurements, Quantitative Mobility Spectrum Analysis (QMSA) of the data is carried out to determine the densities and mobilities of the carriers and the effect of epitaxial defects on channel transport and buffer leakage. This data is then used for growth optimization to be able to develop material structures suitable for HVM of CMOS at the 11nm node and beyond.

Download or read book Electrical Atomic Force Microscopy for Nanoelectronics written by Umberto Celano and published by Springer. This book was released on 2019-08-01 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: The tremendous impact of electronic devices on our lives is the result of continuous improvements of the billions of nanoelectronic components inside integrated circuits (ICs). However, ultra-scaled semiconductor devices require nanometer control of the many parameters essential for their fabrication. Through the years, this created a strong alliance between microscopy techniques and IC manufacturing. This book reviews the latest progress in IC devices, with emphasis on the impact of electrical atomic force microscopy (AFM) techniques for their development. The operation principles of many techniques are introduced, and the associated metrology challenges described. Blending the expertise of industrial specialists and academic researchers, the chapters are dedicated to various AFM methods and their impact on the development of emerging nanoelectronic devices. The goal is to introduce the major electrical AFM methods, following the journey that has seen our lives changed by the advent of ubiquitous nanoelectronics devices, and has extended our capability to sense matter on a scale previously inaccessible.

Download or read book Three Dimensional Integrated Circuit Design written by Vasilis F. Pavlidis and published by Newnes. This book was released on 2017-07-04 with total page 770 pages. Available in PDF, EPUB and Kindle. Book excerpt: Three-Dimensional Integrated Circuit Design, Second Eition, expands the original with more than twice as much new content, adding the latest developments in circuit models, temperature considerations, power management, memory issues, and heterogeneous integration. 3-D IC experts Pavlidis, Savidis, and Friedman cover the full product development cycle throughout the book, emphasizing not only physical design, but also algorithms and system-level considerations to increase speed while conserving energy. A handy, comprehensive reference or a practical design guide, this book provides effective solutions to specific challenging problems concerning the design of three-dimensional integrated circuits. Expanded with new chapters and updates throughout based on the latest research in 3-D integration: - Manufacturing techniques for 3-D ICs with TSVs - Electrical modeling and closed-form expressions of through silicon vias - Substrate noise coupling in heterogeneous 3-D ICs - Design of 3-D ICs with inductive links - Synchronization in 3-D ICs - Variation effects on 3-D ICs - Correlation of WID variations for intra-tier buffers and wires - Offers practical guidance on designing 3-D heterogeneous systems - Provides power delivery of 3-D ICs - Demonstrates the use of 3-D ICs within heterogeneous systems that include a variety of materials, devices, processors, GPU-CPU integration, and more - Provides experimental case studies in power delivery, synchronization, and thermal characterization

Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Download or read book Electrical Properties of Indium Arsenide Nanowires and Their Field Effect Transistors written by Mengqi Fu and published by Springer. This book was released on 2018-12-12 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.

Download or read book Nanostructured Semiconductors written by Serge Zhuiykov and published by Woodhead Publishing. This book was released on 2018-01-02 with total page 568 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructured Semiconductors focuses on the development of semiconductor nanocrystals, their technologies and applications, including energy harvesting, solar cells, solid oxide fuel cells, and chemical sensors. Semiconductor oxides are used in electronics, optics, catalysts, sensors, and other functional devices. In their 2D form, the reduction in size confers exceptional properties, useful for creating faster electronics and more efficient catalysts. Since the first edition of the book, there has been significant progress in the development of new functional nanomaterials with unique and sometimes unpredictable quantum-confined properties within the class what it called two-dimensional (2D) semiconductors. These nanocrystals represent extremely thin nano-structures with thickness of just few nano-meters. Since that time, not only were 2D semiconductor oxides further developed, more importantly, 2D metal dichalcogenides, such as MoS2, MoSe2, WS2, WSe2 and others also progressed significantly in their development demonstrating their superior properties compared to their bulk and microstructural counterparts. The book has been expanded to include these advancements. The book begins with the structure and properties of semiconductor nanocrystals (chapter 1), addresses electronic device applications (chapter 2), discusses 2-Dimensional oxides and dichalcogenide semiconductors (chapters 3 through 5), and ends with energy, environment, and bio applications (chapters 6 through 8). - Focuses on the development of semiconductor nanocrystals and their technologies and applications, including energy harvesting, solar cells, solid oxide fuel cells and chemical sensors - Include other 2D materials, such as dichalcogenides to present a comprehensive resource on the latest advancements in nanostructured semiconductors - Reviews the fundamental physics of conductivity and electron arrangement before proceeding to practical applications - Contains a unique chapter dedicated to the new atomic layer deposition (ALD) technique which has the ability to develop 2D nanostructures with great precision

Download or read book Nanogap Electrodes written by Tao Li and published by John Wiley & Sons. This book was released on 2021-08-16 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: Unique in its scope, this book comprehensively combines various synthesis strategies with applications for nanogap electrodes. Clearly divided into four parts, the monograph begins with an introduction to molecular electronics and electron transport in molecular junctions, before moving on to a whole section devoted to synthesis and characterization. The third part looks at applications with single molecules or self-assembled monolayers, and the whole is rounded off with a section on interesting phenomena observed using molecular-based devices.

Download or read book Device Electronics for Integrated Circuits written by Richard S. Muller and published by . This book was released on 1986 with total page 560 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Second Edition provides all the required information for a course in modern device electronics taken by undergraduate electrical engineers. Offers major new coverage of silicon technology, adds several topics in basic semiconductor physics not treated previously, and introduces Hall-effect sensors. The chapters on MOSFET have been entirely updated, focusing on mobility variations and threshold-voltage dependence. Additional topics include VLSI devices, short channel effects, and computer modeling.

Download or read book Physics of Semiconductor Devices written by V. K. Jain and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 841 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this workshop is to spread the vast amount of information available on semiconductor physics to every possible field throughout the scientific community. As a result, the latest findings, research and discoveries can be quickly disseminated. This workshop provides all participating research groups with an excellent platform for interaction and collaboration with other members of their respective scientific community. This workshop’s technical sessions include various current and significant topics for applications and scientific developments, including • Optoelectronics • VLSI & ULSI Technology • Photovoltaics • MEMS & Sensors • Device Modeling and Simulation • High Frequency/ Power Devices • Nanotechnology and Emerging Areas • Organic Electronics • Displays and Lighting Many eminent scientists from various national and international organizations are actively participating with their latest research works and also equally supporting this mega event by joining the various organizing committees.

Download or read book 2D Monoelemental Materials Xenes and Related Technologies written by Zongyu Huang and published by CRC Press. This book was released on 2022-04-19 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: Monoelemental 2D materials called Xenes have a graphene-like structure, intra-layer covalent bond, and weak van der Waals forces between layers. Materials composed of different groups of elements have different structures and rich properties, making Xenes materials a potential candidate for the next generation of 2D materials. 2D Monoelemental Materials (Xenes) and Related Technologies: Beyond Graphene describes the structure, properties, and applications of Xenes by classification and section. The first section covers the structure and classification of single-element 2D materials, according to the different main groups of monoelemental materials of different components and includes the properties and applications with detailed description. The second section discusses the structure, properties, and applications of advanced 2D Xenes materials, which are composed of heterogeneous structures, produced by defects, and regulated by the field. Features include: Systematically detailed single element materials according to the main groups of the constituent elements Classification of the most effective and widely studied 2D Xenes materials Expounding upon changes in properties and improvements in applications by different regulation mechanisms Discussion of the significance of 2D single-element materials where structural characteristics are closely combined with different preparation methods and the relevant theoretical properties complement each other with practical applications Aimed at researchers and advanced students in materials science and engineering, this book offers a broad view of current knowledge in the emerging and promising field of 2D monoelemental materials.

Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1118 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nanoelectronic Materials written by Loutfy H. Madkour and published by Springer. This book was released on 2019-06-27 with total page 783 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents synthesis techniques for the preparation of low-dimensional nanomaterials including 0D (quantum dots), 1D (nanowires, nanotubes) and 2D (thin films, few layers), as well as their potential applications in nanoelectronic systems. It focuses on the size effects involved in the transition from bulk materials to nanomaterials; the electronic properties of nanoscale devices; and different classes of nanomaterials from microelectronics to nanoelectronics, to molecular electronics. Furthermore, it demonstrates the structural stability, physical, chemical, magnetic, optical, electrical, thermal, electronic and mechanical properties of the nanomaterials. Subsequent chapters address their characterization, fabrication techniques from lab-scale to mass production, and functionality. In turn, the book considers the environmental impact of nanotechnology and novel applications in the mechanical industries, energy harvesting, clean energy, manufacturing materials, electronics, transistors, health and medical therapy. In closing, it addresses the combination of biological systems with nanoelectronics and highlights examples of nanoelectronic–cell interfaces and other advanced medical applications. The book answers the following questions: • What is different at the nanoscale? • What is new about nanoscience? • What are nanomaterials (NMs)? • What are the fundamental issues in nanomaterials? • Where are nanomaterials found? • What nanomaterials exist in nature? • What is the importance of NMs in our lives? • Why so much interest in nanomaterials? • What is at nanoscale in nanomaterials? • What is graphene? • Are pure low-dimensional systems interesting and worth pursuing? • Are nanotechnology products currently available? • What are sensors? • How can Artificial Intelligence (AI) and nanotechnology work together? • What are the recent advances in nanoelectronic materials? • What are the latest applications of NMs?

Download or read book Ni Np Pt Zr written by B. Predel and published by Springer. This book was released on 1998-01-30 with total page 387 pages. Available in PDF, EPUB and Kindle. Book excerpt: For everyone concerned with the technology and application of metals and alloys and with the development of new metallic materials, a detailed knowledge of phase equilibria is indispensable. Also, information on the thermodynamical and crystallographical data of the systems under investigation is essential, and often metastable crystalline phases as well as quasicrystalline or amorphous alloys are of interest. Vol. IV/5 presents all these data. Because of the large amount available of experimental evidence and thermochemical calculations, a presentation in one volume, as it was realized several decades ago in the widely used book of M. Hansen "Aufbau der Zweistoff-Legierungen" proved to be impossible. So volume IV/5 had to be divided into several subvolumes which cover - in alphabetical order - all binary systems of importance. Subvolume IV/5I, the eighth of the series, deals with the systems Ni-Np ... Pt-Zr. Further subvolumes are in preparation.