Download or read book Stress and Strain in Epitaxy Theoretical Concepts Measurements and Applications written by J.-P. Deville and published by Elsevier. This book was released on 2001-07-03 with total page 333 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains keynote lectures which have been delivered at the 3rd Porquerolles' School on Surface Science, SIR2000 (Surfaces-Interfaces-Relaxation). The aim of this school was to review the main concepts necessary to understand the role of interfacial stress, strain and relaxation in crystal growth by heteroepitaxy. By bringing together scientists from various fields (physics, chemistry, materials science and engineering) which daily use complementary methodological approaches (experiment, theory, modelization), the school allowed to offer 11 multidisciplinary courses. This book addresses the state of art of stress in epitaxial materials, it describes the various methods to measure the atomic displacement and stress fields, it reviews the spectroscopic methods necessary to map the interface chemistry, it details the theoretical methods and concepts which are needed to predict them and it questions the fact that stress and relaxation can induce specific properties in magnetism, catalysis, electron transport and so on. The field of stress and strain in heteroepitaxy has know large developments during the last ten years. New techniques have been used to set up new devices in which functionalities are obtained through structuration at a nanometer scale. Large-scale integration and reduced dimensions are the key factors to optimize the achievements of these devices. Already used in industry (quantum wells, magnetic sensors), these devices are obtained by molecular beam epitaxy, sputtering or pulsed laser deposition. Their reduced dimensionality increased the number of surfaces and interfaces, the role of which has to be precised. Experimentalists try now to associate materials having very different crystal structure and chemical composition. The elastic stress stored in the device can induce various phenomena which have to be evaluated, understood and predicted. The book intends also to show that many questions are still in debate.
Download or read book Stress and Strain in Epitaxy written by Margrit Hanbücken and published by Elsevier Science Limited. This book was released on 2001 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains keynote lectures which have been delivered at the 3rd Porquerolles' School on Surface Science, SIR2000 (Surfaces-Interfaces-Relaxation). The aim of this school was to review the main concepts necessary to understand the role of interfacial stress, strain and relaxation in crystal growth by heteroepitaxy. By bringing together scientists from various fields (physics, chemistry, materials science and engineering) which daily use complementary methodological approaches (experiment, theory, modelization), the school allowed to offer 11 multidisciplinary courses. This book addresses the state of art of stress in epitaxial materials, it describes the various methods to measure the atomic displacement and stress fields, it reviews the spectroscopic methods necessary to map the interface chemistry, it details the theoretical methods and concepts which are needed to predict them and it questions the fact that stress and relaxation can induce specific properties in magnetism, catalysis, electron transport and so on. The field of stress and strain in heteroepitaxy has know large developments during the last ten years. New techniques have been used to set up new devices in which functionalities are obtained through structuration at a nanometer scale. Large-scale integration and reduced dimensions are the key factors to optimize the achievements of these devices. Already used in industry (quantum wells, magnetic sensors), these devices are obtained by molecular beam epitaxy, sputtering or pulsed laser deposition. Their reduced dimensionality increased the number of surfaces and interfaces, the role of which has to be precised. Experimentalists try now to associate materials having very different crystal structure and chemical composition. The elastic stress stored in the device can induce various phenomena which have to be evaluated, understood and predicted. The book intends also to show that many questions are still in debate.
Download or read book Surface Science Approach to Stress and Strain in Epitaxy written by Margrit Hanbücken and published by . This book was released on 2001 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Surface Science Approach to Stress and Strain in Epitaxy written by Margrit Hanbücken and published by . This book was released on 2001 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Materials Fundamentals of Molecular Beam Epitaxy written by Jeffrey Y. Tsao and published by Academic Press. This book was released on 2012-12-02 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technology of crystal growth has advanced enormously during the past two decades. Among, these advances, the development and refinement of molecular beam epitaxy (MBE) has been among the msot important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today they form the basis for the most advanced device structures in solid-state physics, electronics, and optoelectronics. As an example, Figure 0.1 shows a vertical-cavity surface emitting laser structure grown by MBE. * Provides comprehensive treatment of the basic materials and surface science principles that apply to molecular beam epitaxy * Thorough enough to benefit molecular beam epitaxy researchers * Broad enough to benefit materials, surface, and device researchers * Referenes articles at the forefront of modern research as well as those of historical interest
Download or read book Stress and Strain Engineering at Nanoscale in Semiconductor Devices written by Chinmay K. Maiti and published by CRC Press. This book was released on 2021-06-29 with total page 275 pages. Available in PDF, EPUB and Kindle. Book excerpt: Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.
Download or read book Epitaxy of Semiconductors written by Udo W. Pohl and published by Springer Science & Business Media. This book was released on 2013-01-11 with total page 335 pages. Available in PDF, EPUB and Kindle. Book excerpt: Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations.
Download or read book The Role of Lattice Mismatch Strain in the Molecular Beam Epitaxial Growth of III V Semiconductor Thin Films written by Gregory Joseph Whaley and published by . This book was released on 1989 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book SiGe and Si Strained Layer Epitaxy for Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Download or read book Epitaxy written by Marian A. Herman and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 530 pages. Available in PDF, EPUB and Kindle. Book excerpt: In a uniform and comprehensive manner the authors describe all the important aspects of the epitaxial growth processes of solid films on crystalline substrates, e.g. processes in which atoms of the growing film mimic the arrangement of the atoms of the substrate. Emphasis is put on sufficiently fundamental and unequivocal presentation of the subject in the form of an easy-to-read review. A large part of this book focuses on the problems of heteroepitaxy. The most important epitaxial growth techniques which are currently widely used in basic research as well as in manufacturing processes of devices are presented and discussed in detail.
Download or read book Epitaxy of Nanostructures written by Vitaly Shchukin and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main focus of the book are the physical mechanisms behind the spontaneous formation of ordered nanostructures at semiconductor surfaces. These mechanisms are at the root of recent breakthroughs in advanced nanotechnology of quantum-wire and quantum-dot fabrication. Generic theoretical models are presented addressing formation of all basic types of nanostructures, including periodically faceted surfaces, arrays of step-bunches of equal heights and single- and multi-sheet arrays of both 2- and 3-D strained islands. Decisive experiments on both structural and optical characterization of nanostructures are discussed to verify theoretical models and link them to practical examples.
Download or read book Metrology and Diagnostic Techniques for Nanoelectronics written by Zhiyong Ma and published by CRC Press. This book was released on 2017-03-27 with total page 843 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoelectronics is changing the way the world communicates, and is transforming our daily lives. Continuing Moore’s law and miniaturization of low-power semiconductor chips with ever-increasing functionality have been relentlessly driving R&D of new devices, materials, and process capabilities to meet performance, power, and cost requirements. This book covers up-to-date advances in research and industry practices in nanometrology, critical for continuing technology scaling and product innovation. It holistically approaches the subject matter and addresses emerging and important topics in semiconductor R&D and manufacturing. It is a complete guide for metrology and diagnostic techniques essential for process technology, electronics packaging, and product development and debugging—a unique approach compared to other books. The authors are from academia, government labs, and industry and have vast experience and expertise in the topics presented. The book is intended for all those involved in IC manufacturing and nanoelectronics and for those studying nanoelectronics process and assembly technologies or working in device testing, characterization, and diagnostic techniques.
Download or read book Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond written by Guilei Wang and published by Springer Nature. This book was released on 2019-09-20 with total page 115 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.
Download or read book Epitaxial Growth of Complex Metal Oxides written by Gertjan Koster and published by Woodhead Publishing. This book was released on 2022-04-22 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial Growth of Complex Metal Oxides, Second Edition reviews techniques and recent developments in the fabrication quality of complex metal oxides, which are facilitating advances in electronic, magnetic and optical applications. Sections review the key techniques involved in the epitaxial growth of complex metal oxides and explore the effects of strain and stoichiometry on crystal structure and related properties in thin film oxides. Finally, the book concludes by discussing selected examples of important applications of complex metal oxide thin films, including optoelectronics, batteries, spintronics and neuromorphic applications. This new edition has been fully updated, with brand new chapters on topics such as atomic layer deposition, interfaces, STEM-EELs, and the epitaxial growth of multiferroics, ferroelectrics and nanocomposites. Examines the techniques used in epitaxial thin film growth for complex oxides, including atomic layer deposition, sputtering techniques, molecular beam epitaxy, and chemical solution deposition techniques Reviews materials design strategies and materials property analysis methods, including the impacts of defects, strain, interfaces and stoichiometry Describes key applications of epitaxially grown metal oxides, including optoelectronics, batteries, spintronics and neuromorphic applications
Download or read book Vapour Growth and Epitaxy written by G.W. Cullen and published by Elsevier. This book was released on 2013-09-03 with total page 409 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vapor Growth and Epitaxy covers the proceedings of the Third International Conference on Vapor Growth and Epitaxy, held in Amsterdam, The Netherlands on August 18-21, 1975. This conference highlights the crystal growth aspects of the preparation, characterization, and perfection of thin films of electronic interest. This book is organized into two sections encompassing 54 chapters. The first section considers the fundamental and applied crystal growth studies of silicon, III-V and II-VI compounds, and magnetic garnets. This section also describes the structure of autoepitaxial diamond films and the morphology of single crystals grown from the vapor phase. The second section deals with nucleation and crystal growth kinetic studies of whiskers and the fabrication of solar cells. This section further surveys the equilibrium, kinetics, and epitaxy in the chemical vapor deposition of silicon compounds.
Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Download or read book Silicon Molecular Beam Epitaxy written by Erwin Kasper and published by Elsevier. This book was released on 2012-12-02 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy.A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping. Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy (J.-E. Sundgren et al.). Influence of substrate orientation on surface segregation process in silicon-MBE (K. Nakagawa et al.). Growth and transport properties of SimSb1 (H. Jorke, H. Kibbel). Author Index. Volume. II. In-situ electron microscope studies of lattice mismatch relaxation in GexSi1-x/Si heterostructures (R. Hull et al.). Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1-x/Si strained layer superlattices (D.D. Perovic et al.). Silicon Growth. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy (P.J. Grunthaner et al.). Interaction of structure with kinetics in Si(001) homoepitaxy (S. Clarke et al.). Surface step structure of a lens-shaped Si(001) vicinal substrate (K. Sakamoto et al.). Photoluminescence characterization of molecular beam epitaxial silicon (E.C. Lightowlers et al.). Doping. Boron doping using compound source (T. Tatsumi). P-type delta doping in silicon MBE (N.L. Mattey et al.). Modulation-doped superlattices with delta layers in silicon (H.P. Zeindell et al.). Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers (N. Djebbar et al.). Alternative Growth Methods. Limited reaction processing: growth of Si/Si1-xGex for heterojunction bipolar transistor applications (J.L. Hoyt et al.). High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition (M.L. Green et al.). Epitaxial growth of single-crystalline Si1-xGex on Si(100) by ion beam sputter deposition (F. Meyer et al.). Phosphorus gas doping in gas source silicon-MBE (H. Hirayama, T. Tatsumi). Devices. Narrow band gap base heterojunction bipolar transistors using SiGe alloys (S.S. Iyer et al.). Silicon-based millimeter-wave integrated circuits (J-F. Luy). Performance and processing line integration of a silicon molecular beam epitaxy system (A.A. van Gorkum et al.). Silicides. Reflection high energy electron diffraction study of Cosi2/Si multilayer structures (Q. Ye at al.). Epitaxy of metal silicides (H. von Kanel et al.). Epitaxial growth of ErSi2 on (111)si (D. Loretto et al.). Other Material Systems. Oxygen-doped and nitrogen-doped silicon films prepared by molecular beam epitaxy (M. Tabe et al.). Properties of diamond structure SnGe films grown by molecular beam epitaxy (A. Harwit et al.). Si-MBE: Prospects and Challenges. Prospects and challenges for molecular beam epitaxy in silicon very-large-scale integration (W. Eccleston). Prospects and challenges for SiGe strained-layer epitaxy (T.P. Pearsall). Author Index.
