Download or read book Strained Silicon silicon germanium Heterostructure Complimentary Metal Oxide Semiconductor Devices written by Rameshwari Chinchani and published by . This book was released on 2004 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterisation of Strained Silicon silicon Germanium Metal oxide semiconductor Devices written by Kelvin Sian Kiat Kwa and published by . This book was released on 2004 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Strained Silicon Heterostructures written by C. K. Maiti and published by IET. This book was released on 2001 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.
Download or read book Germanium silicon Strained Layers and Heterostructures written by Suresh C. Jain and published by . This book was released on 1994 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Biaxial strain in coherent GeSi layers grown on Si substrates provides a powerful tool for tailoring bandgaps and band offsets. Extremely high electron and hole mobilities have been obtained in modulation-doped GeSi strained layer heterostructures. Ultra-high-speed Heterojunction Bipolar Transistors and MODFETs, and long wavelength (1 to 20 micrometre) IR Detectors have been fabricated using these layers. Quantum wells, ultra-thin period superlattices, and quantum dots can also be fabricated using the strained layers. These devices were previously implemented using III-V semiconductors. Now they can be fabricated using existing Si technology, which is mature and reliable. GeSi strained layer technology has made it possible to manufacture monolithic Si integrated circuits containing heterojunction devices.
Download or read book Applications of Silicon Germanium Heterostructure Devices written by C.K Maiti and published by CRC Press. This book was released on 2001-07-20 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st
Download or read book Silicon Germanium Strained Layers and Heterostructures written by M. Willander and published by Elsevier. This book was released on 2003-10-02 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling. * Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject* Appropriate for students and senior researchers
Download or read book SiGe and Si Strained Layer Epitaxy for Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Download or read book Strained Si Heterostructure Field Effect Devices written by C.K Maiti and published by CRC Press. This book was released on 2007-01-11 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi
Download or read book Properties of Strained and Relaxed Silicon Germanium written by Erich Kasper and published by Institution of Electrical Engineers. This book was released on 1995 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume systematically evaluates and reviews the properties of silicon germanium within a structured framework, relating them where appropriate to stoichiometry and strain. The invited contributions include concise discussion and expert guidance to the reference literature.
Download or read book Characterization of Heteroepitaxial Silicon Germanium Carbon Layers for Metal Oxide Semiconductor Field Effect Transistor MOSFET Applications written by Peter John Bjeletich and published by . This book was released on 2004 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Strain Engineered MOSFETs written by C.K. Maiti and published by CRC Press. This book was released on 2018-10-03 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.
Download or read book Germanium Based Technologies written by Cor Claeys and published by Elsevier. This book was released on 2011-07-28 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt: Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field. The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book. State-of-the-art information available for the first time as an all-in-source Extensive reference list making it an indispensable reference book Broad coverage from fundamental aspects up to industrial applications
Download or read book Silicon Germanium SiGe Nanostructures written by Y. Shiraki and published by Elsevier. This book was released on 2011-02-26 with total page 649 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices. With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. Reviews the materials science of nanostructures and their properties and applications in different electronic devices Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition
Download or read book Silicon Germanium Carbon Alloys written by S. Pantellides and published by CRC Press. This book was released on 2002-07-26 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials
Download or read book Full band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe written by Fabian M. Bufler and published by Herbert Utz Verlag. This book was released on 1998 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Germanium Materials Devices written by Roy Szweda and published by Elsevier Science Limited. This book was released on 2002 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first edition of Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 examines the development of the silicon germanium business over a six-year period 2001 to 2006. It analyses the trends in markets, technologies and industry structure and profiles all the major players. It is specifically aimed at users and manufacturers of substrates, epiwafers, equipment and devices. The analysis includes a competitive assessment of the market of silicon germanium vs. gallium arsenide, indium phosphide vs. other forms of silicon. Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 is designed to assist with business plans, R&D and manufacturing strategies. It will be an indispensable aid for managers responsible for business development, technology assessment and market research. The report examines the rapid development of silicon germanium from an R&D curiosity to production status. An extensive treatment from materials through processes to devices and applications it encapsulates the entire silicon germanium business of today and assesses future directions. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.
Download or read book Silicon Heterostructure Handbook written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.
