Download or read book Strain balanced InAs InAsSb Type II Superlattices on GaSb Substrates for Infrared Photodetector Applications written by Elizabeth H. Steenbergen and published by . This book was released on 2012 with total page 177 pages. Available in PDF, EPUB and Kindle. Book excerpt: Infrared photodetectors, used in applications for sensing and imaging, such as military target recognition, chemical/gas detection, and night vision enhancement, are predominantly comprised of an expensive II-VI material, HgCdTe. III-V type-II superlattices (SLs) have been studied as viable alternatives for HgCdTe due to the SL advantages over HgCdTe: greater control of the alloy composition, resulting in more uniform materials and cutoff wavelengths across the wafer; stronger bonds and structural stability; less expensive substrates, i.e., GaSb; mature III-V growth and processing technologies; lower band-to-band tunneling due to larger electron effective masses; and reduced Auger recombination enabling operation at higher temperatures and longer wavelengths. However, the dark current of InAs/Ga1-xInxSb SL detectors is higher than that of HgCdTe detectors and limited by Shockley-Read-Hall (SRH) recombination rather than Auger recombination. This dissertation work focuses on InAs/InAs1-xSbx SLs, another promising alternative for infrared laser and detector applications due to possible lower SRH recombination and the absence of gallium, which simplifies the SL interfaces and growth processes. InAs/InAs1-xSbx SLs strain-balanced to GaSb substrates were designed for the mid- and long-wavelength infrared (MWIR and LWIR) spectral ranges and were grown using MOCVD and MBE by various groups. Detailed characterization using high-resolution x-ray diffraction, atomic force microscopy, photoluminescence (PL), and photoconductance revealed the excellent structural and optical properties of the MBE materials. Two key material parameters were studied in detail: the valence band offset (VBO) and minority carrier lifetime. The VBO between InAs and InAs1-xSbx strained on GaSb with x = 0.28 - 0.41 was best described by Qv = ÄEv/ÄEg = 1.75 ± 0.03. Time-resolved PL experiments on a LWIR SL revealed a lifetime of 412 ns at 77 K, one order of magnitude greater than that of InAs/Ga1-xInxSb LWIR SLs due to less SRH recombination. MWIR SLs also had 100's of ns lifetimes that were dominated by radiative recombination due to shorter periods and larger wave function overlaps. These results allow InAs/InAs1-xSbx SLs to be designed for LWIR photodetectors with minority carrier lifetimes approaching those of HgCdTe, lower dark currents, and higher operating temperatures.

Download or read book Materials Science and Technology Strained Layer Superlattices written by and published by Academic Press. This book was released on 1991-02-20 with total page 443 pages. Available in PDF, EPUB and Kindle. Book excerpt: The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this two-volume survey offers a comprehensive discussion of the physics of strained-layer superlattices (Volume 32), as well as detailing fabrication technology and applications of the material (Volume 33). Although each volume is edited to stand alone, the two books combine to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.

Download or read book Infrared Detectors written by Antonio Rogalski and published by CRC Press. This book was released on 2010-11-15 with total page 900 pages. Available in PDF, EPUB and Kindle. Book excerpt: Completely revised and reorganized while retaining the approachable style of the first edition, Infrared Detectors, Second Edition addresses the latest developments in the science and technology of infrared (IR) detection. Antoni Rogalski, an internationally recognized pioneer in the field, covers the comprehensive range of subjects necessary to un

Download or read book Antimonide based Infrared Detectors written by Antoni Rogalski and published by . This book was released on 2018 with total page 273 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Among the many materials investigated in the infrared (IR) field, narrow-gap semiconductors are the most important in IR photon detector family. Although the first widely used narrow-gap materials were lead salts (during the 1950s, IR detectors were built using single-element-cooled PbS and PbSe photoconductive detectors, primary for anti-missile seekers), this semiconductor family was not well distinguished. This situation seems to have resulted from two reasons: the preparation process of lead salt photoconductive polycrystalline detectors was not well understood and could only be reproduced with well-tried recipes; and the theory of narrow-gap semiconductor bandgap structure was not well known for correct interpretation of the measured transport and photoelectrical properties of these materials"--

Download or read book Physics Chemistry And Application Of Nanostructures Reviews And Short Notes To Nanomeeting 2017 written by Victor E Borisenko and published by World Scientific. This book was released on 2017-04-27 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents invited reviews and original short notes of recent results obtained in studies concerning the fabrication and application of nanostructures, which hold great promise for the new generation of electronic, optoelectronic and energy conversion devices. They present achievements discussed at Special Sessions 'Frontiers of Molecular Diagnostics with Nanostructures' and 'Nanoelectromagnetics' organized within Nanomeeting-2017.Discussing exciting and relatively new topics such as fast-progressing nanoelectronics and optoelectronics, molecular electronics and spintronics, nanoelectromagnetics, nanophotonics, nanosensorics and nanoenergetics as well as nanotechnology and quantum processing of information, this book gives readers a more complete understanding of the practical applications of nanotechnology and nanostructures.

Download or read book Quantum Processes in Semiconductors written by B. K. Ridley and published by Clarendon Press. This book was released on 1993-07-15 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book encapsulates the fundamental quantum processes of importance to the physics and technology of semiconductors. This new edition is expanded by the addition of a new chapter on Phonon processes. The author has also made additions to the existing chapters. Besides being a useful reference for workers in the field this book will be a valuable text for postgraduate courses.

Download or read book Quantum Well Infrared Photodetectors written by Harald Schneider and published by Springer. This book was released on 2006-10-18 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addressed to both students as a learning text and scientists/engineers as a reference, this book discusses the physics and applications of quantum-well infrared photodetectors (QWIPs). It is assumed that the reader has a basic background in quantum mechanics, solid-state physics, and semiconductor devices. To make this book as widely accessible as possible, the treatment and presentation of the materials is simple and straightforward. The topics for the book were chosen by the following criteria: they must be well-established and understood; and they should have been, or potentially will be, used in practical applications. The monograph discusses most aspects relevant for the field but omits, at the same time, detailed discussions of specialized topics such as the valence-band quantum wells.

Download or read book Metalorganic Vapor Phase Epitaxy MOVPE written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2016-10-03 with total page 794 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

Download or read book Study of Structural Optical and Electrical Properties of InAs InAsSb Superlattices Using Multiple Characterization Techniques written by Xiaomeng Shen and published by . This book was released on 2015 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt: InAs/InAsSb type-II superlattices (T2SLs) can be considered as potential alternatives for conventional HgCdTe photodetectors due to improved uniformity, lower manufacturing costs with larger substrates, and possibly better device performance. This dissertation presents a comprehensive study on the structural, optical and electrical properties of InAs/InAsSb T2SLs grown by Molecular Beam Epitaxy. The effects of different growth conditions on the structural quality were thoroughly investigated. Lattice-matched condition was successfully achieved and material of exceptional quality was demonstrated.After growth optimization had been achieved, structural defects could hardly be detected, so different characterization techniques, including etch-pit-density (EPD) measurements, cathodoluminescence (CL) imaging and X-ray topography (XRT), were explored, in attempting to gain better knowledge of the sparsely distributed defects. EPD revealed the distribution of dislocation-associated pits across the wafer. Unfortunately, the lack of contrast in images obtained by CL imaging and XRT indicated their inability to provide any quantitative information about defect density in these InAs/InAsSb T2SLs.The nBn photodetectors based on mid-wave infrared (MWIR) and long-wave infrared (LWIR) InAs/InAsSb T2SLs were fabricated. The significant difference in Ga composition in the barrier layer coupled with different dark current behavior, suggested the possibility of different types of band alignment between the barrier layers and the absorbers. A positive charge density of 1.8 1017/cm3 in the barrier of MWIR nBn photodetector, as determined by electron holography, confirmed the presence of a potential well in its valence band, thus identifying type-II alignment. In contrast, the LWIR nBn photodetector was shown to have type-I alignment because no sign of positive charge was detected in its barrier.Capacitance-voltage measurements were performed to investigate the temperature dependence of carrier densities in a metal-oxide-semiconductor (MOS) structure based on MWIR InAs/InAsSb T2SLs, and a nBn structure based on LWIR InAs/InAsSb T2SLs. No carrier freeze-out was observed in either sample, indicating very shallow donor levels. The decrease in carrier density when temperature increased was attributed to the increased density of holes that had been thermally excited from localized states near the oxide/semiconductor interface in the MOS sample. No deep-level traps were revealed in deep-level transient spectroscopy temperature scans.

Download or read book Integration of Functional Oxides with Semiconductors written by Alexander A. Demkov and published by Springer Science & Business Media. This book was released on 2014-02-20 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the basic physical principles of the oxide/semiconductor epitaxy and offers a view of the current state of the field. It shows how this technology enables large-scale integration of oxide electronic and photonic devices and describes possible hybrid semiconductor/oxide systems. The book incorporates both theoretical and experimental advances to explore the heteroepitaxy of tuned functional oxides and semiconductors to identify material, device and characterization challenges and to present the incredible potential in the realization of multifunctional devices and monolithic integration of materials and devices. Intended for a multidisciplined audience, Integration of Functional Oxides with Semiconductors describes processing techniques that enable atomic-level control of stoichiometry and structure and reviews characterization techniques for films, interfaces and device performance parameters. Fundamental challenges involved in joining covalent and ionic systems, chemical interactions at interfaces, multi-element materials that are sensitive to atomic-level compositional and structural changes are discussed in the context of the latest literature. Magnetic, ferroelectric and piezoelectric materials and the coupling between them will also be discussed. GaN, SiC, Si, GaAs and Ge semiconductors are covered within the context of optimizing next-generation device performance for monolithic device processing.

Download or read book Handbook of Optoelectronics written by John P. Dakin and published by CRC Press. This book was released on 2017-10-05 with total page 673 pages. Available in PDF, EPUB and Kindle. Book excerpt: Handbook of Optoelectronics offers a self-contained reference from the basic science and light sources to devices and modern applications across the entire spectrum of disciplines utilizing optoelectronic technologies. This second edition gives a complete update of the original work with a focus on systems and applications. Volume I covers the details of optoelectronic devices and techniques including semiconductor lasers, optical detectors and receivers, optical fiber devices, modulators, amplifiers, integrated optics, LEDs, and engineered optical materials with brand new chapters on silicon photonics, nanophotonics, and graphene optoelectronics. Volume II addresses the underlying system technologies enabling state-of-the-art communications, imaging, displays, sensing, data processing, energy conversion, and actuation. Volume III is brand new to this edition, focusing on applications in infrastructure, transport, security, surveillance, environmental monitoring, military, industrial, oil and gas, energy generation and distribution, medicine, and free space. No other resource in the field comes close to its breadth and depth, with contributions from leading industrial and academic institutions around the world. Whether used as a reference, research tool, or broad-based introduction to the field, the Handbook offers everything you need to get started. John P. Dakin, PhD, is professor (emeritus) at the Optoelectronics Research Centre, University of Southampton, UK. Robert G. W. Brown, PhD, is chief executive officer of the American Institute of Physics and an adjunct full professor in the Beckman Laser Institute and Medical Clinic at the University of California, Irvine.

Download or read book Laser Radar written by National Research Council and published by National Academies Press. This book was released on 2014-03-14 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: In today's world, the range of technologies with the potential to threaten the security of U.S. military forces is extremely broad. These include developments in explosive materials, sensors, control systems, robotics, satellite systems, and computing power, to name just a few. Such technologies have not only enhanced the capabilities of U.S. military forces, but also offer enhanced offensive capabilities to potential adversaries - either directly through the development of more sophisticated weapons, or more indirectly through opportunities for interrupting the function of defensive U.S. military systems. Passive and active electro-optical (EO) sensing technologies are prime examples. Laser Radar considers the potential of active EO technologies to create surprise; i.e., systems that use a source of visible or infrared light to interrogate a target in combination with sensitive detectors and processors to analyze the returned light. The addition of an interrogating light source to the system adds rich new phenomenologies that enable new capabilities to be explored. This report evaluates the fundamental, physical limits to active EO sensor technologies with potential military utility; identifies key technologies that may help overcome the impediments within a 5-10 year timeframe; considers the pros and cons of implementing each existing or emerging technology; and evaluates the potential uses of active EO sensing technologies, including 3D mapping and multi-discriminate laser radar technologies.

Download or read book Semiconductor Nanostructures for Optoelectronic Applications written by Todd D. Steiner and published by Artech House. This book was released on 2004 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: Annotation Tiny structures measurable on the nanometer scale (one-billionth of a meter) are known as nanostructures, and nanotechnology is the emerging application of these nanostructures into useful nanoscale devices. As we enter the 21st century, more and more professional are using nanotechnology to create semiconductors for a variety of applications, including communications, information technology, medical, and transportation devices. Written by today's best researchers of semiconductor nanostructures, this cutting-edge resource provides a snapshot of this exciting and fast-changing field. The book covers the latest advances in nanotechnology and discusses the applications of nanostructures to optoelectronics, photonics, and electronics.

Download or read book III Nitride Ultraviolet Emitters written by Michael Kneissl and published by Springer. This book was released on 2015-11-12 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive overview of the state-of-the-art in group III-nitride based ultraviolet LED and laser technologies, covering different substrate approaches, a review of optical, electronic and structural properties of InAlGaN materials as well as various optoelectronic components. In addition, the book gives an overview of a number of key application areas for UV emitters and detectors, including water purification, phototherapy, sensing, and UV curing. The book is written for researchers and graduate level students in the area of semiconductor materials, optoelectronics and devices as well as developers and engineers in the various application fields of UV emitters and detectors.

Download or read book Mid infrared Optoelectronics written by Eric Tournié and published by Woodhead Publishing. This book was released on 2019-10-19 with total page 750 pages. Available in PDF, EPUB and Kindle. Book excerpt: Mid-infrared Optoelectronics: Materials, Devices, and Applications addresses the new materials, devices and applications that have emerged over the last decade, along with exciting areas of research. Sections cover fundamentals, light sources, photodetectors, new approaches, and the application of mid-IR devices, with sections discussing LEDs, laser diodes, and quantum cascade lasers, mid-infrared optoelectronics, emerging research areas, dilute bismide and nitride alloys, Group-IV materials, gallium nitride heterostructures, and new nonlinear materials. Finally, the most relevant applications of mid-infrared devices are reviewed in industry, gas sensing, spectroscopy, and imaging. This book presents a key reference for materials scientists, engineers and professionals working in R&D in the area of semiconductors and optoelectronics. Provides a comprehensive overview of mid-infrared photodetectors and light sources and the latest materials and devices Reviews emerging areas of research in the field of mid-infrared optoelectronics, including new materials, such as wide bandgap materials, chalcogenides and new approaches, like heterogeneous integration Includes information on the most relevant applications in industry, like gas sensing, spectroscopy and imaging

Download or read book Fundamentals of Solid State Engineering written by Manijeh Razeghi and published by Springer Science & Business Media. This book was released on 2006-06-12 with total page 894 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides a multidisciplinary introduction to quantum mechanics, solid state physics, advanced devices, and fabrication Covers wide range of topics in the same style and in the same notation Most up to date developments in semiconductor physics and nano-engineering Mathematical derivations are carried through in detail with emphasis on clarity Timely application areas such as biophotonics , bioelectronics