Download or read book Strain and Structure of Amorphous Boron Carbide and Silicon Carbide Thin Films written by Jeffrey Gerard Hershberger and published by . This book was released on 1999 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Amorphous Silicon Carbide Thin Films written by Mariana Amorim Fraga and published by . This book was released on 2011 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide (SiC) has been described as a suitable semiconductor material to use in MEMS and electronic devices for harsh environments. In recent years, many developments in SiC technology as bulk growth, materials processing, electronic devices and sensors have been shown. Moreover, some studies show the synthesis, characterisation and processing of crystalline SiC films. However, few works have investigated the potential of amorphous silicon carbide (a-SiC) thin films for sensors applications. This book presents fundamentals of amorphous silicon carbide thin films and their applications in piezoresistive sensors for high temperature applications.
Download or read book Semiconducting Boron Carbide Thin Films Structure Processing and Diode Applications written by Ruqiang Bao and published by . This book was released on 2010 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Amorphous and Crystalline Silicon Carbide II written by Mahmud M. Rahman and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains written versions of the papers presented at the Second Inter national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.
Download or read book Silicon Carbide Thin Films Via Low Pressure Chemical Vapor Deposition for Micro and Nano electromechanical Systems written by Christopher Stephen Roper and published by . This book was released on 2007 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Structure and Bonding in Amorphous Iron Carbide Thin Films written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Deposition and Characterization of Single and Multilayered Boron Carbide and Boron Carbonitride Thin Films Different Sputtering Configurations written by Tolga Tavşanoğlu and published by . This book was released on 2009 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this study single and multilayered boron carbide and boron carbonitride (BCN) thin films deposited with several sputtering configurations were investigated. Three types of well adherent and homogenous boron carbide films were deposited by conventional direct current (DC) magnetron sputtering, plasma-enhanced DC magnetron sputtering and radio frequency (RF) sputtering. Boron carbonitride thin films deposited by reactive DC magnetron sputtering in addition of nitrogen into processing gas were also studied. Functionally graded multilayered designs were used to growth thicker boron carbide and boron carbonitride films. An own produced, direct current compatible, conducting boron carbide target and a commercial boron carbide target was used for deposition of thin films. All boron carbide thin films deposited were amorphous. Boron carbide films deposited by conventional DC magnetron sputtering had columnar microstructures with about 20 GPa hardness and 220 GPa elastic modulus. Boron carbide films deposited by plasma-enhanced DC magnetron sputtering had featureless, non-columnar microstructures with smooth surface morphologies. Hardness values of about 40 GPa, elastic modulus of 300 GPa and wear rates of 2.6x10-8 mm3/Nm were reached for these films. Boron carbide films deposited by RF sputtering had 22 GPa hardness and 240 GPa elastic modulus. For boron carbonitride films deposited, hardness values between 10-20 GPa, elastic modulus between 135-180 GPa and wear rates of 1.5x10-9 mm3/Nm were obtained. Well adherent boron carbide and BCN top layers with thicknesses over 1 were successfully grown by means of functionally graded multilayer designs.
Download or read book Electron Optical Studies of Heteroepitaxial Growth of Beta Silicon Carbide Layers Through Molten Metal Intermediates written by Joseph J. Comer and published by . This book was released on 1970 with total page 30 pages. Available in PDF, EPUB and Kindle. Book excerpt: Beta silicon carbide has the potential of becoming an important semiconductor device material for hazardous military environments such as high temperature and radiation. This report is concerned with a study of the growth of thin single crystal films of beta silicon carbide through molten metal intermediates. Thin films of nickel, cobalt, chromium and iron were deposited by vacuum deposition on to the (0001) faces of single crystals of alpha silicon carbide. Then heteroepitaxial layers of beta silicon carbide were deposited through the molten metal films by the hydrogen reduction of methyltrichlorosilane. The deposited films were studied by electron microscopy, electron diffraction and electron beam microprobe analysis to determine the growth mechanism and to arrive at optimum conditions for heteroepitaxial growth. From the results obtained it was concluded that nickel and cobalt were equally effective in promoting epitaxial growth. Films of nickel only 20A in thickness were as effective as those up to 300A. Results with chromium and iron were disappointing for different reasons. Chromium did not etch the substrate surface uniformly because of poor wetting. With iron, whisker growth of beta silicon carbide occurred at the surface. Although in many respects the growth of mechanism resembled that of the vapor-liquid-solid method, certain differences were observed which make the actual growth mechanism using nickel and cobalt films still uncertain. (Author).
Download or read book The Influence of Annealing on Thin Films of Beta SiC written by Irvin Berman and published by . This book was released on 1972 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin films of beta silicon carbide were prepared on alpha silicon carbide substrates by the chemical vapor deposition (CVD) technique involving the hydrogen reduction of silane and propane. The films were prepared under a variety of conditions and subsequently subjected to thermal annealing cycles between 1600 degrees C and 2000 degrees C. It is shown that the single crystallinity of the beta films improved with continued annealing. The beta polytype was found to be stable over the entire range of temperatures studied.
Download or read book Physics and Technology of Silicon Carbide Devices written by Yasuto Hijikata and published by BoD – Books on Demand. This book was released on 2012-10-16 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.
Download or read book Amorphous and Crystalline Silicon Carbide III and Other Group IV IV Materials written by Gary Lynn Harris and published by Springer. This book was released on 1992 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Amorphous and Crystalline Silicon Carbide and Related Materials written by Gary L. Harris and published by Springer. This book was released on 1989-03-08 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt: Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.
Download or read book Silicon Carbide written by I. N. Frantsevich and published by Springer. This book was released on 1970 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties and Applications of Silicon Carbide written by Rosario Gerhardt and published by BoD – Books on Demand. This book was released on 2011-04-04 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, we explore an eclectic mix of articles that highlight some new potential applications of SiC and different ways to achieve specific properties. Some articles describe well-established processing methods, while others highlight phase equilibria or machining methods. A resurgence of interest in the structural arena is evident, while new ways to utilize the interesting electromagnetic properties of SiC continue to increase.
Download or read book Deposition of Boron Carbide Thin Films by Supersonic Plasma Jet Chemical Vapor Deposition written by Olivier Postel and published by . This book was released on 1998 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Amorphous and Heterogeneous Silicon Based Films 2002 Volume 715 written by J. David Cohen and published by Cambridge University Press. This book was released on 2002-10-11 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book on amorphous silicon technology shows a trend towards technologies based on amorphous and heterogeneous silicon (solar cells, TFTs, imaging arrays, sensors, etc.) and brings together researchers from around the world to share their expanding expertise. The book contains eleven chapters and focuses on basic mechanisms of growth (as well as new approaches to film growth); hot wire, CVD-produced amorphous and microcrystalline films and related subjects of film crystallization and recrystallization; the electronic structure and transport properties of silicon-based thin films are discussed, together with hydrogen microstructure and metastability. Silicon nitride, four on alloys with germanium, and two dealing predominantly with silicon carbide are looked at. There is also focus on photovoltaic devices based on either amorphous or microcrystalline (or mixed phase) materials. It also offers a look at thin-film transistors, as well as related types of imaging and sensing arrays and there are papers on novel device structures and new types of technologies being developed using amorphous/heterogeneous thin film, silicon-based materials.
Download or read book He Mechanical Properties of Amorphous Silicon Carbide Films Deposited by Pecvd and Rf Sputtering for Application as a Structural Layer in Microbridge Based Rf Mems written by Rocco John Parro (III.) and published by . This book was released on 2010 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this thesis was to characterize the relevant mechanical properties of amorphous silicon carbide in order to evaluate its application to microbridge-based RF MEMS switches. For the study, Young's modulus and residual stress were determined by load deflection testing of bulk micromachined thin film diaphragms of SiC deposited by plasma-enhanced chemical vapor deposition (PECVD) and radio-frequency magnetron sputtering. The effects of film thickness, a silicon or silicon dioxide substrate material, and metallization with chromium and gold on the values of Young's modulus and residual stress were quantified for 300 and 500 nm-thick PECVD SiC films annealed at 450 @C. For bi-layered, 500 nm-thick sputtered SiC films on silicon, the effects of thermal annealing at 350@C and 450@C on the values of Young's modulus, residual stress, and Poisson's ratio were determined.
