Download or read book Stability of Point Defects in Silicon Induced by High Energy Low Dose Ion Implantation written by Lalita Josyula and published by . This book was released on 1997 with total page 50 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Effect of Disorder and Defects in Ion Implanted Semiconductors Optical and Photothermal Characterization written by and published by Academic Press. This book was released on 1997-06-12 with total page 335 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Download or read book Intrinsic Point Defects Impurities and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Download or read book Science and Technology of Defects in Silicon written by C.A.J. Ammerlaan and published by Elsevier. This book was released on 2014-01-01 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities.In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.
Download or read book High Energy and High Dose Ion Implantation written by S.U. Campisano and published by Elsevier. This book was released on 1992-06-16 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion beam processing is a means of producing both novel materials and structures. The contributions in this volume strongly focus on this aspect and include many papers reporting on the modification of the electrical and structural properties of the target materials, both metals and semiconductors, as well as the synthesis of buried and surface compound layers. Many examples on the applications of high energy and high dose ion implantation are also given. All of the papers from Symposia C and D are presented in this single volume because the interests of many of the participants span both topics. Additionally many of the materials science aspects, including experimental methods, equipment and processing problems, diagnostic and analytical techniques are common to both symposia.
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976-03 with total page 938 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation Induced Defect Formation and Amorphization in the Group IV Semiconductors written by Diane P. Hickey and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Damage in Si and Ge was produced by Si implantation at 40 keV to a dose of 1 x 1014 cm−2 and 1 x 1015 cm−2, and amorphizing damage in diamond was produced by Si implantation at 1 MeV to a dose of 3 and 7 x 1015 cm−2. All implants were carried out at room temperature. For non-amorphizing implants (1014 Si+ cm−2) into Ge, dot-like defects formed immediately upon implantation and were stable up to temperatures of 650 °C. The activation energy of these defects was determined to be approximately 0.2 " 0.1 eV. For amorphizing implants (1015 Si+ cm−2) into Ge and upon solid-phase epitaxial regrowth, the same types of defects seen in Si were also seen in Ge. However, in Ge, the end-of-range defects were the least stable, dissolving at temperatures around 650 °C. The activation energy for the dissolution of end-of-range defects in Ge is approximately 0.4 " 0.1 eV. For diamond, non-amorphizing Si+ implantation (
Download or read book Proceedings of the Third International Symposium on Defects in Silicon written by Takao Abe and published by The Electrochemical Society. This book was released on 1999 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Investigation of Defects Formed by Ion Implantation of H2 Into Silicon written by Patrick Whiting and published by . This book was released on 2009 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Ion cutting achieved by the implantation of hydrogen or the co-implantation of hydrogen and helium is among the most common methods for the formation of Silicon on Insulator (SOI) structures used in the semiconductor industry. In this method, hydrogen is implanted into silicon at a high fluence and is heated in order to induce an exfoliation event. During this exfoliation event, a silicon wafer is cleaved along the depth at which the maximum damage concentration occurs, and the cleaved material bonds chemically to any underlying material being used as a handle substrate. The ion implantation process induces a variety of defect species which evolve as they are annealed at varying temperatures and times and the characteristics of these defects and the reactions which dominate their formation are critical for low temperature substrates such as LCD glass. This study observes the annealing characteristics of a variety of structural and electronic defects induced by ion implantation, including hydrogen decorated monovacancies and hydrogen decorated interstitials. The states arising from these decorated point defects were analyzed using Multiple Internal Transmission Infrared Spectroscopy (MIT-IR) and Deep Level Transient Spectroscopy (DLTS). A method for observing implant-relate defects on a MOS Capacitor using a DLTS measurement was developed. A new method for extracting the activation energy and the capture cross section of states observed with DLTS through the use of the Full Width at "Nth" Maximum was also developed. MIT-IR spectra resulting from ion implantation were analyzed using a novel method to extract the activation energy, reaction velocity and order of a solid state reaction, termed Kinetic Differential Analysis. Analysis using the methods described above allowed for the identification of five trap energy levels associated with hydrogen ion implantation which were tentatively assigned to VH2 (.15eV) VH3 (~.54eV) and IHx (.16eV and .19eV) defects. Kinetic Differential Analysis of MIT-IR spectra has identified reaction pathways associated with the 'decay' of decorated monovacancy defects. These chemical reactions have kinetic reaction orders of approximately 1.5, indicating a secondary reaction which contributes to the decay as well as some general interaction between reactants during the decay process."--Abstract.
Download or read book Proceedings of the Second Symposium on Defects in Silicon written by W. Murray Bullis and published by . This book was released on 1991 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defects in Ion Implanted Silicon Investigated by Transmission Electron Microscopy written by Kevin Scott Jones and published by . This book was released on 1987 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 1044 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation Technology 94 written by S. Coffa and published by Newnes. This book was released on 1995-05-16 with total page 1031 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.
Download or read book On the Interactions of Point Defects Dopants and Light Element Impurities in Silicon as Stimulated by 200 KV Electron Irradiation written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this research has been the investigation of atomic manipulation in silicon. It has been demonstrated that bulk vacancies and interstitials are created and spatially separated one Frenkel pair at a time during 200 kV electron irradiation of nitrogen-doped silicon. The mechanism by which the nitrogen pair allows Frenkel pair separation is shown to be a combination of the lowering of the energy barrier to a knock-on event combined with a more stable end-state. Anomalous nitrogen diffusion has been observed as a result of low energy ion milling, and the diffusion of nitrogen is studied theoretically, revealing a new, low energy model for N2 pair diffusion. For the first time, 200 kV irradiation has been demonstrated not only to create Frenkel pairs during broad-beam irradiation, but also to allow the formation of extended defects like voids, oxygen precipitates and interstitial complexes. Using electron energy loss spectroscopy combined with first principles simulations, dark and bright areas induced in Z contrast images by 200 kV irradiation are demonstrated to be due to vacancy and self-interstitial complexes, respectively, with N>2. Finally, the manipulation of dopants in silicon is induced by using the difference in energy transferable from a 200 kV electron to light versus heavy elements (e.g. B vs. Sb). Atomic Force Microscopy is used to demonstrate that n-type regions with a size corresponding to the beam diameter are created in p-type material by short periods of 200 kV e-beam exposure. In this way, a method can be developed to create p-n-p type devices of arbitrary size in codoped silicon using a room temperature process.
Download or read book Point Defects and Dopant Diffusion in Silicon written by Stanford University. Stanford Electronics Laboratories. Integrated Circuits Laboratory and published by . This book was released on 1985 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Evolution of Point Defect Clusters During Ion Irradiation and Thermal Annealing written by Alexander Valerievich Fedorov and published by IOS Press. This book was released on 2000 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Air Force Research Review written by United States. Air Force. Systems Command and published by . This book was released on 1970 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:
