Download or read book Special Issue Selection of Papers from the 2007 Semiconducting and Insulating Materials Conference SIMC XIV written by International Semiconducting and Insulating Materials Conference and published by . This book was released on 2008 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Selection of Papers from the 2007 Semiconducting and Insulating Materials Conference written by and published by . This book was released on 2008 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Download or read book Proceedings of the 4th International Conference on Electrical Engineering and Control Applications written by Sofiane Bououden and published by Springer Nature. This book was released on 2020-09-29 with total page 1257 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gathers papers presented during the 4th International Conference on Electrical Engineering and Control Applications. It covers new control system models, troubleshooting tips and complex system requirements, such as increased speed, precision and remote capabilities. Additionally, the papers discuss not only the engineering aspects of signal processing and various practical issues in the broad field of information transmission, but also novel technologies for communication networks and modern antenna design. This book is intended for researchers, engineers and advanced postgraduate students in the fields of control and electrical engineering, computer science and signal processing, as well as mechanical and chemical engineering.
Download or read book Radiation Effects in Silicon Carbide written by A.A. Lebedev and published by Materials Research Forum LLC. This book was released on 2017 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book reviews the most interesting research concerning the radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. The electrical parameters that make SiC a promising material for applications in modern electronics are discussed in detail. Specific features of the crystal structure of SiC are considered. It is shown that, when wide-bandgap semiconductors are studied, it is necessary to take into account the temperature dependence of the carrier removal rate, which is a standard parameter for determining the radiation hardness of semiconductors. The carrier removal rate values obtained by irradiation of various SiC polytypes with n- and p-type conductivity are analyzed in relation to the type and energy of the irradiating particles. The influence exerted by the energy of charged particles on how radiation defects are formed and conductivity is compensated in semiconductors under irradiation is analyzed. Furthermore, the possibility to produce controlled transformation of silicon carbide polytype is considered. The involvement of radiation defects in radiative and nonradiative recombination processes in SiC is analyzed. Data are also presented regarding the degradation of particular SiC electronic devices under the influence of radiation and a conclusion is made regarding the radiation resistance of SiC. Lastly, the radiation hardness of devices based on silicon and silicon carbide are compared.
Download or read book Compound Semiconductor written by and published by . This book was released on 1998 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Crystal Growth Technology written by Hans J. Scheel and published by John Wiley & Sons. This book was released on 2009-07-31 with total page 695 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production. The major industrial crystals are treated: Si, GaAs, GaP, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave applications and more. Contains 29 contributions from leading crystal technologists covering the following topics: * General aspects of crystal growth technology * Silicon * Compound semiconductors * Oxides and halides * Crystal machining * Epitaxy and layer deposition Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of them from the major growth industries and crystal growth centers. In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.
Download or read book Lead Free Electronic Solders written by KV Subramanian and published by Springer Science & Business Media. This book was released on 2007-06-28 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: Even though the effect of lead contamination on human health has been known for decades, very little attention has been paid to lead-based solders used in electronics until recently. This comprehensive book examines all the important issues associated with lead-free electronic solder. It collects the work of researchers recognized for their significant scientific contributions in the area.
Download or read book Soft Computing Theories and Applications written by Millie Pant and published by Springer. This book was released on 2020-08-14 with total page 1126 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on soft computing and how it can be applied to solve real-world problems arising in various domains, ranging from medicine and healthcare, to supply chain management, image processing and cryptanalysis. It gathers high-quality papers presented at the International Conference on Soft Computing: Theories and Applications (SoCTA 2019), organized by the National Institute of Technology Patna, India. Offering valuable insights into soft computing for teachers and researchers alike, the book will inspire further research in this dynamic field.
Download or read book Transistor Level Modeling for Analog RF IC Design written by Wladyslaw Grabinski and published by Springer Science & Business Media. This book was released on 2006-07-01 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.
Download or read book Handbook of Nanoscopy written by Gustaaf van Tendeloo and published by John Wiley & Sons. This book was released on 2012-12-21 with total page 1484 pages. Available in PDF, EPUB and Kindle. Book excerpt: This completely revised successor to the Handbook of Microscopy supplies in-depth coverage of all imaging technologies from the optical to the electron and scanning techniques. Adopting a twofold approach, the book firstly presents the various technologies as such, before going on to cover the materials class by class, analyzing how the different imaging methods can be successfully applied. It covers the latest developments in techniques, such as in-situ TEM, 3D imaging in TEM and SEM, as well as a broad range of material types, including metals, alloys, ceramics, polymers, semiconductors, minerals, quasicrystals, amorphous solids, among others. The volumes are divided between methods and applications, making this both a reliable reference and handbook for chemists, physicists, biologists, materials scientists and engineers, as well as graduate students and their lecturers.
Download or read book Metal semiconductor Contacts written by E. H. Rhoderick and published by Oxford University Press, USA. This book was released on 1988 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: This second edition brings a greatly expanded treatment of the physics of Schottky-barrier formation to its comprehensive discussion of modern semiconductor technology. Topics covered include the current/voltage relationship, the capacitance of rectifying contacts, and practical methods of fabricating contacts. Written for semiconductor technologists and physicists engaged in research on semiconductor interfaces, this text emphasizes practical implications wherever they are relevant to device technology.
Download or read book Eighth Grade Bites 1 written by Heather Brewer and published by Penguin. This book was released on 2013-01-10 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vlad has to keep his vampire urges under control while dealing with the pressures of middle school. Thirteen-year-old Vladimir Tod really hates junior high. Bullies harass him, the principal is dogging him, and the girl he likes prefers his best friend. Oh, and Vlad has a secret: His mother was human, but his father was a vampire. With no idea of the extent of his powers, Vlad struggles daily with his blood cravings and his enlarged fangs. When a substitute teacher begins to question him a little too closely, Vlad worries that his cover is about to be blown. But then he faces a much bigger problem: He’s being hunted by a vampire killer. Watch a QuickTime trailer for this book.
Download or read book Gallium Nitride GaN written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Download or read book Weedy Rices written by James C. Delouche and published by Food & Agriculture Org.. This book was released on 2007 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt: Drawing on literature reviews from ongoing unpublished research, research reports and symposia carried out on various aspects of the importance, ecology, biology and control of weedy rices, this publication also highlights global economic and environmental problems created by weedy rices, including red rice types.
Download or read book Ammonothermal Synthesis and Crystal Growth of Nitrides written by Elke Meissner and published by Springer Nature. This book was released on 2021-02-07 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a collection of contributed chapters, delivering a comprehensive overview of topics related to the synthesis and crystal growth of nitride compounds under supercritical ammonia conditions. Focusing on key chemical and technological aspects of ammonothermal synthesis and growth of functional nitride compounds, the book also describes many innovative techniques for in-situ observation and presents new data fundamental for materials synthesis under ammonothermal conditions. With its detailed coverage of many thermodynamic and kinetics aspects, which are necessary for understanding and controlling crystal growth, this contributed volume is the ideal companion to materials chemists and engineers at any point in their journey in this rich and exciting field.
Download or read book Modeling Phosphorus in the Environment written by David E. Radcliffe and published by CRC Press. This book was released on 2006-11-14 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite advances in modeling, such as graphical user interfaces, the use of GIS layers, and databases for developing input files, the approaches to modeling phosphorus (P) have not changed since their initial development in the 1980s. Current understanding of P processes has evolved and this new information needs to be incorporated into the current
