Download or read book Radar Handbook Third Edition written by Merrill I. Skolnik and published by McGraw Hill Professional. This book was released on 2008-02-17 with total page 1329 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Industry Standard in Radar Technology_Now Updated with All the Advances and Trends of the Past 17 Years Turn to the Third Edition of Radar Handbook for state-of-the-art coverage of the entire field of radar technology_from fundamentals to the newest applications. With contributions by 30 world experts, this resource examines methods for predicting radar range and explores radar subsystems such as receivers, transmitters, antennas, data processing, ECCM, and pulse compression. This radar handbook also explains the target cross section...radar echoes from ground and sea...and all radar systems, including MTI, AMTI, pulse doppler, and others. Using SI units, the Third Edition of Radar Handbook features: Unsurpassed guidance on radar fundamentals, theory, and applications Hundreds of examples and illustrations New to this edition: new chapters on radar digital signal processing, radar in air traffic control, ground penetrating radar, fighter aircraft radar, and civil marine radar; 22 thoroughly revised chapters; 17 new contributors Inside This Cutting-Edge Radar Guide • MTI Radar • Pulse Doppler Radar • Multifunctional Radar Systems for Fighter Aircraft • Radar Receivers • Automatic Detection, Tracking, and Sensor Integration • Pulse Compression Radar • Radar Transmitters • Reflector Antennas • Phased Array Radar Antennas • Radar Cross Section • Sea Clutter • Ground Echo • Space-Based Radar • Meteorological Radar • HF Over-the-Horizon Radar • Ground Penetrating Radar • Civil Marine Radar • Bistatic Radar • Radar Digital Signal Processing • And More!

Download or read book The VLSI Handbook written by Wai-Kai Chen and published by CRC Press. This book was released on 2018-10-03 with total page 2320 pages. Available in PDF, EPUB and Kindle. Book excerpt: For the new millenium, Wai-Kai Chen introduced a monumental reference for the design, analysis, and prediction of VLSI circuits: The VLSI Handbook. Still a valuable tool for dealing with the most dynamic field in engineering, this second edition includes 13 sections comprising nearly 100 chapters focused on the key concepts, models, and equations. Written by a stellar international panel of expert contributors, this handbook is a reliable, comprehensive resource for real answers to practical problems. It emphasizes fundamental theory underlying professional applications and also reflects key areas of industrial and research focus. WHAT'S IN THE SECOND EDITION? Sections on... Low-power electronics and design VLSI signal processing Chapters on... CMOS fabrication Content-addressable memory Compound semiconductor RF circuits High-speed circuit design principles SiGe HBT technology Bipolar junction transistor amplifiers Performance modeling and analysis using SystemC Design languages, expanded from two chapters to twelve Testing of digital systems Structured for convenient navigation and loaded with practical solutions, The VLSI Handbook, Second Edition remains the first choice for answers to the problems and challenges faced daily in engineering practice.

Download or read book State of the Art Program on Compound Semiconductors 50 SOTAPOCS 50 and Processes at the Semiconductor Solution Interface 3 written by A. G. Baca and published by The Electrochemical Society. This book was released on 2009-05 with total page 447 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions contain the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and other related topics, as well as the most recent developments in processes at the semiconductor/solution interface including etching, oxidation, passivation, film growth, electrochemical and photoelectrochemical processes, electroluminescence, photoluminescence, and other related topics.

Download or read book Ultra wide Bandgap Semiconductor Materials written by Meiyong Liao and published by Elsevier. This book was released on 2019-06-18 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. - Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, ß-Ga2O3, boron nitrides, and low-dimensional materials - Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance - Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics

Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 775 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.

Download or read book Devices for Integrated Circuits written by H. Craig Casey and published by John Wiley & Sons. This book was released on 1998-12-14 with total page 549 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book develops the device physics of the Si and III-V compound semiconductor devices used in integrated circuits. Important equations are derived from basic physical concepts. The physics of these devices are related to the parameters used in SPICE. Terminology is intended to prepare students for reading technical journals on semiconductor devices. This text is suitable for first-year graduate students and seniors in Electrical Engineering; graduate students in Material Science and Chemical Engineering, interested in semiconductor materials; Computer Science students interested in custom VLSI design; and professionals in the semiconductor industry.

Download or read book VLSI SoC System on Chip in the Nanoscale Era Design Verification and Reliability written by Thomas Hollstein and published by Springer. This book was released on 2017-08-31 with total page 247 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains extended and revised versions of the best papers presented at the 24th IFIP WG 10.5/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2016, held in Tallinn, Estonia, in September 2016. The 11 papers included in the book were carefully reviewed and selected from the 36 full papers presented at the conference. The papers cover a wide range of topics in VLSI technology and advanced research. They address the latest scientific and industrial results and developments as well as future trends in the field of System-on-Chip (SoC) Design.

Download or read book Fundamentals of Tunnel Field Effect Transistors written by Sneh Saurabh and published by CRC Press. This book was released on 2016-10-26 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.

Download or read book Integrated Electronics on Aluminum Nitride written by Reet Chaudhuri and published by Springer Nature. This book was released on 2022-12-06 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics.

Download or read book 2000 IEEE International Symposium on Compound Semiconductors written by IEEE Electron Devices Society and published by IEEE Standards Office. This book was released on 2000 with total page 584 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text constitutes the proceedings from the 25th IEEE International Symposium on Compound Semiconductors, which took place in 2000. Topics covered include emitter science and technology, heterostructure devices and quantum effect materials and devices.

Download or read book Handbook for III V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Download or read book Advanced Millimeter wave Technologies written by Duixian Liu and published by John Wiley & Sons. This book was released on 2009-03-03 with total page 850 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains one of the hottest topics in wireless and electronic devices community, namely the wireless communication at mmWave frequencies, especially at the 60 GHz ISM band. It provides the reader with knowledge and techniques for mmWave antenna design, evaluation, antenna and chip packaging. Addresses practical engineering issues such as RF material evaluation and selection, antenna and packaging requirements, manufacturing tolerances, antenna and system interconnections, and antenna One of the first books to discuss the emerging research and application areas, particularly chip packages with integrated antennas, wafer scale mmWave phased arrays and imaging Contains a good number of case studies to aid understanding Provides the antenna and packaging technologies for the latest and emerging applications with the emphases on antenna integrations for practical applications such as wireless USB, wireless video, phase array, automobile collision avoidance radar, and imaging

Download or read book III V Integrated Circuit Fabrication Technology written by Shiban Tiku and published by CRC Press. This book was released on 2016-04-27 with total page 706 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs processing has reached a mature stage. New semiconductor compounds are emerging that will dominate future materials and device research, although the processing techniques used for GaAs will still remain relevant. This book covers all aspects of the current state of the art of III-V processing, with emphasis on HBTs. It is aimed at practicing

Download or read book 1997 IEEE International Symposium on Compound Semiconductors written by Mike Melloch and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1998 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text focuses on the conductive characteristics of crystalline compounds, including the topics: GaN and compliant substrates; optical characterization; heterostructure transistors; quantum dots; visible emitters; GaN and related compounds; and passivation and growth issues in GaAs."

Download or read book Fundamentals of III V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Download or read book 2D Materials for Nanoelectronics written by Michel Houssa and published by CRC Press. This book was released on 2016-05-05 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Major developments in the semiconductor industry are on the horizon through the use of two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, for integrated circuits (ICs). 2D Materials for Nanoelectronics is the first comprehensive treatment of these materials and their applications in nanoelectronic devices.Compris

Download or read book Compound Semiconductors 1997 Proceedings of the IEEE Twenty Fourth INT Symposium on Compound Semiconductors held in San Diego California 8 11 September 1997 written by Mike Melloch and published by CRC Press. This book was released on 1998-01-01 with total page 706 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 24th Symposium attracted over 250 submissions, predominantly on growth and characterization. Compound semiconductors have become pervasive in applications that are unique and could not be addressed in any other viable manner, such as laser diodes in compact disk players, high brightness LEDs in automotive tail lights, low noise and low power amplifiers in cellular phones, infra-red diodes in remote controls, low noise amplifier front ends in televisions, and the recent high-brightness blue LEDs. Many of the contributions that engendered these novel products were first reported at the International Symposium on Compound Semiconductors. The procceedings of this conferences are an essential reference for all researchers in semiconductor physics, optoelectronics, electronic and electrical engineering, researching the properties and applications of compound materials.