Download or read book Special Issue on Silicon germanium Alloys written by and published by . This book was released on 1995 with total page 119 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Special Issue on Silicon germanium Materials and Devices written by Chinmay K. Maiti and published by . This book was released on 2001 with total page 105 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Special Issue on Silicon Germanium written by Raminderpal Singh and published by . This book was released on 2005 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Germanium Materials and Devices A Market and Technology Overview to 2006 written by R. Szweda and published by Elsevier. This book was released on 2002-11-26 with total page 419 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first edition of Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 examines the development of the silicon germanium business over a six-year period 2001 to 2006. It analyses the trends in markets, technologies and industry structure and profiles all the major players. It is specifically aimed at users and manufacturers of substrates, epiwafers, equipment and devices. The analysis includes a competitive assessment of the market of silicon germanium vs. gallium arsenide, indium phosphide vs. other forms of silicon. Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 is designed to assist with business plans, R&D and manufacturing strategies. It will be an indispensable aid for managers responsible for business development, technology assessment and market research. The report examines the rapid development of silicon germanium from an R&D curiosity to production status. An extensive treatment from materials through processes to devices and applications it encapsulates the entire silicon germanium business of today and assesses future directions. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.
Download or read book NBS Special Publication written by and published by . This book was released on 1968 with total page 684 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Strain Engineered MOSFETs written by C.K. Maiti and published by CRC Press. This book was released on 2018-10-03 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.
Download or read book Silicon Germanium Alloys for Photovoltaic Applications written by Ammar Nayfeh and published by Elsevier. This book was released on 2023-03-09 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-Germanium Alloys for Photovoltaic Applications provides a comprehensive look at the use of Silicon-Germanium alloys Si1-xGex in photovoltaics. Different methods of Si1-xGex alloy deposition are reviewed, including their optical and material properties as function of Ge% are summarized, with SiGe use in photovoltaic applications analyzed. Fabrication and characterization of single junction Si1-xGex solar cells on Si using a-Si as emitter is discussed, with a focus on the effect of different Ge%. Further, the book highlights the use Si1-xGex as a template for lattice matched deposition of III-V layers on Si, along with its challenges and benefits, including financial aspects. Finally, fabrication and characterization of single junction GaAsxP1-x cells on Si via Si1-xGex is discussed, along with the simulation and modeling of graded SiGe layers and experimental model verification. Includes a summary of SiGe alloys material properties relevant for solar research, all compiled at one place Presents various simulation models and analysis of SiGe material properties on solar cell performance Includes a cost-analysis for III-V/Si solar cells via SiGe alloys
Download or read book Silicon Germanium Strained Layers and Heterostructures written by M. Willander and published by Elsevier. This book was released on 2003-10-02 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling. * Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject* Appropriate for students and senior researchers
Download or read book Rapid Melt Growth of Silicon Germanium for Heterogeneous Integration on Silicon written by Hwei Yin Serene Koh and published by Stanford University. This book was released on 2011 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon has made modern integrated circuit technology possible. As MOSFET gate lengths are scaled to 22nm and beyond, it has become apparent that new materials must be introduced to the silicon-based CMOS process for improved performance and functionality. This dissertation begins with a review of the MOSFET leakage current problem and presents one potential solution: Band-to-Band Tunneling (BTBT) transistors, which have the potential for steeper subthreshold slopes because they do not have the fundamental 'kT/q' limit in the rate at which conventional MOSFETs can be turned on or off. It is clear that these devices must be fabricated in materials with smaller bandgaps for improved performance. Silicon Germanium (SiGe) is one possible material system that could be used to fabricate enhanced BTBT transistors. Rapid Melt Growth (RMG) is a technique that has been used to recrystallize materials on Si substrates. RMG, however, has not previously been applied to SiGe, a binary alloy with large separation in the liquidus-solidus curve in its phase diagram. The development of process and experimental results for obtaining SiGe-on-insulator (SGOI) from bulk Si substrates through RMG are presented. The theory of RMG is analyzed and compositional profiles obtained during RMG of SiGe are modeled to understand why we were able to obtain high quality lateral compositionally graded SGOI substrates. The success of RMG SiGe suggests that the RMG technique can also be applied to III-V ternary and quaternary compounds with similar pseudo-binary phase diagrams. This opens up a wide range of material possibilities with the potential for novel applications in heterogeneous integration and 3-D device technology.
Download or read book Special Technology Area Review on Silicon Germanium Technology written by and published by . This book was released on 2001 with total page 19 pages. Available in PDF, EPUB and Kindle. Book excerpt: The DoD has been assessing technologies that have potential for decreasing the cost of its systems by leveraging the commercial world. For this reason, Working Group A (Microwaves) and Working Group B (Microelectronics) of the DoD Advisory Group on Electron Devices (AGED) held a Special Technology Area Review (STAR) on January 19, 1994 in the area of silicon/germanium (Si/Ge) electronic devices. Subsequently a mini-STAR was held on June 14, 1995, to provide an update to the January, 1994, information. A report on the 1995 mini--STARR is included as an addendum to this report. For the most part Si/Ge devices offer the promise of utilizing cost-effective standard silicon (Si) processing capable of leading to affordable Si/Ge components in volume quantity. However, unlike most standard Si technology% higher performance Si/Ge technology could prove cost- effective in those DoD microwave frequency speed microelectronics applications that require less than the highest performance available, say from Si/Ge. The future cost of Si/Ge parts is a complicated issue, but it is a current belief that the principal benefit of Si/Ge technology will be low cost coupled with "better than silicon" performance in other words, potentially a higher-than-silicon performance return for each DOD dollar invested). The future of Si/Ge is closely tied to unresolved infrastructure issues and, if industry fails to address these issues (for example, the development of critically lacking Si/Ge infrastructure production tools) the future merchant market might constrain Si/Ge to a niche technology role.
Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Download or read book Silicon Germanium and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevic
Download or read book Silicon germanium Heterojunction Bipolar Transistors written by John D. Cressler and published by Artech House. This book was released on 2003 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.
Download or read book Improved Infrared Response Technique for Detecting Defects and Impurities in Germanium and Silicon P i n Diodes written by Alvin H. Sher and published by . This book was released on 1975 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reviews on Silicon Germanium Tin and Lead Compounds written by and published by . This book was released on 1979 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metal Compounds in Cancer Therapy written by S.P. Fricker and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: The discovery of the antitumour activity of cisplatin in 1965 and its subsequent introduction into clinical trials in 1971 was the catalyst for a major international research effort investigating the potential of metal compounds in cancer therapy. Cisplatin now occupies an important place in the armamentarium of the oncologist due to its effectiveness in the treatment of testicular cancer. A second generation analogue, carbo platin, offers reduced toxicity together with therapeutic activity, which gives it a place in the front-line therapy of genitourinary cancers. These and other successes have encouraged the search for novel metal-based drugs for cancer therapy. Research has shown that metal compounds have potential for activity not only as cytotoxic antitumour agents, but also in areas such as adjuvant therapy, diagnosis and immunotherapy. The aim of this book is to review and describe the major achievements and developments arising from this international research effort. The contributing authors come from labora tories throughout Europe and America and represent the many disci plines characteristic of this research, such as clinical research, pharmacology, tumour biology and inorganic medicinal chemistry.
Download or read book Advanced Gate Stacks for High Mobility Semiconductors written by Athanasios Dimoulas and published by Springer Science & Business Media. This book was released on 2008-01-01 with total page 397 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
