Download or read book Special Features of the Low temperature Deposition of Silicon Oxide in the Electron cyclotron Resonance Plasma of Superhigh Frequency Discharge written by S.A Neustroev and published by . This book was released on 1989 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Temperature Electron Cyclotron Resonance Plasma Deposition of Silicon Dioxide written by Riyaz Rashid and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Oxidation of Silicon in an Electron Cyclotron Resonance Plasma written by Daniel Arthur Carl and published by . This book was released on 1991 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1288 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Temperature Epitaxial Silicon Growth Using Electron Cyclotron Resonance Plasma Deposition written by Scott Jeffrey DeBoer and published by . This book was released on 1995 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Temperature Sulfur Hexafluoride Plasma Etching of Silicon silicon Dioxide in an Electron Cyclotron Resonance Reactor written by Robert Leo Jarecki and published by . This book was released on 1996 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Low Temperature Growth of Fluorinated Oxides Using Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition written by Roger Graham Keen and published by . This book was released on 2001 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was seen that small amounts of fluorine in the oxide reduced the interface charge density by an order of magnitude however, this was not found to be true for increasing amounts of fluorine. An increase of fluorine incorporation in the oxide found that the interface charge density increased. Overall, a dramatic improvement in the interface charge density of MOS capacitors due to the introduction of small amounts of fluorine was seen. In the completion of this work, it was shown that CVD is a viable alternative for the growth of gate dielectrics and gives several advantages over conventional oxide growth methods.

Download or read book British Reports Translations and Theses written by British Library. Document Supply Centre and published by . This book was released on 1990 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electron Cyclotron Resonance Deposition of Amorphous Silicon Alloy Films and Devices written by and published by . This book was released on 1992 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report describes work to develop a state-of-the-art electron cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition (PECVD) system. The objective was to understand the deposition processes of amorphous silicon (a-Si:H) and related alloys, with a best-effort improvement of optoelectronic material properties and best-effort stabilization of solar cell performance. ECR growth parameters were systematically and extensively investigated; materials characterization included constant photocurrent measurement (CPM), junction capacitance, drive-level capacitance profiling (DLCP), optical transmission, light and dark photoconductivity, and small-angle X-ray scattering (SAXS). Conventional ECR-deposited a-Si:H was compared to a new form, a-Si:(Xe, H), in which xenon gas was added to the ECR plasma. a-Si:(Xe, H) possessed low, stable dark conductivities and high photosensitivites. Light-soaking revealed photodegradation rates about 35% lower than those of comparable radio frequency (rf)-deposited material. ECR-deposited p-type a SiC:H and intrinsic a-Si:H films underwent evaluation as components of p-i-n solar cells with standard rf films for the remaining layers.

Download or read book Electron Cyclotron Resonance Ion Sources and ECR Plasmas written by R Geller and published by CRC Press. This book was released on 1996-01-01 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt: Acknowledged as the "founding father" of and world renowned expert on electron cyclotron resonance sources Richard Geller has produced a unique book devoted to the physics and technicalities of electron cyclotron resonance sources. Electron Cyclotron Resonance Ion Sources and ECR Plasmas provides a primer on electron cyclotron phenomena in ion sources as well as being a reference to the field of ion source developments. Coverage includes elements of plasma physics, specific electron cyclotron resonance physics, and the relevant technology directed at both scientists and engineers.

Download or read book Macroscopic Properties of a Multipolar Electron Cyclotron Resonance Microwave cavity Plasma Source for Anisotropic Silicon Etching written by Jeffrey Alan Hopwood and published by . This book was released on 1990 with total page 538 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Koe ogoogoldei nah tohi e Matiu Maake Luke Jone written by and published by . This book was released on with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Properties of Electron Cyclotron Resonance Plasma Sources written by Aseem Kumar Srivastava and published by . This book was released on 1995 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book On the Role of Ions in Electron Cyclotron Resonance Plasma enhanced Chemical Vapor Deposition of Silicon Dioxide written by Hewlett-Packard Laboratories and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Perturbative Measurements of Electron Cyclotron Resonance Ion Source Plasmas written by Derek Elwin Neben and published by . This book was released on 2019 with total page 227 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heavy ion accelerators are a valuable resource for the nuclear science community to study atomic physics. One such heavy ion accelerator is the Coupled Cyclotron Facility (CCF) at the National Superconducting Cyclotron Laboratory (NSCL) which relies on Electron Cyclotron Resonance (ECR) ion sources to provide the primary beam to the target. ECR ion sources are essential for the efficient operation of research accelerators such as the CCF, providing high currents of highly charged ions. Highly charged ion beams increase the efficiency of the accelerators, but require longer confinement times and higher temperature plasmas in the ion sources than is necessary to produce singly charged beams. The need to use high temperature and low density plasmas creates challenges including those relating to plasma stability. ECR ion sources provide a good platform to accept metallic vapor ovens and sputtering probes allowing the CCF to accelerate up to 30 types of beams ranging from oxygen to uranium. Furthermore, ECR ion sources use no filaments or cathodes providing a high degree of reliability for the accelerator facility. As the intensity frontier demands ever rarer isotopes from accelerator facilities, the heavy ion beam intensity must increase [70], which creates new demands from the ion sources.The work presented within this dissertation set out to better understand the mechanism that confines highly charged ions in the ECR plasma. Specifically, it was explored if hot electrons (energy larger than 50 keV) contribute to ion confinement by generating an electrostatic well in the plasma potential [68]. Perturbative measurements of ECR ion sources are presented with the aim to explore ion confinement times: pulsed sputtering (Chapter 4) and amplitude modulation (Chapter 5). Chapter 3 explores the geometry of the sputtering probe with respect to the magnetic field which was crucial to produce reliable pulsed sputtering results on the ECR ion source. Axial pulsed sputtering, which could be conveniently implemented on fully superconducting sources, incorporated a bias disc effect that highly perturbed the plasma. Radial sputtering was emulated by placing a semi-shielded probe along the plasma chamber wall in between the electron loss surfaces.Ion confinement time was characterized through the decay time of the beam current, which is proportional to ion confinement time. Ion beam decay times were measured for different charge states of gold in an oxygen plasma in Chapter 4. Decay time always increased with increasing charge state. Decay time also increased with hot electron temperature for lower frequency operation (13 GHz), but reached an optimized value for higher frequency operation (18 GHz) due to plasma instabilities. Electrostatic confinement of ions appeared to be the most plausible mechanism to explain the observed decay time behaviors. A novel perturbative measurement technique was developed for ECR ion sources using Amplitude Modulation (AM) of microwave power. The AM measurement was originally motivated by whether or not 50~kHz modulation in microwave power (from the microwave source) would be observable in the beam current. A systematic study was organized on the University of Jyvaskyla Physics Department (JYFL) normal conducting ECR ion source in Jyvaskyla Finland. Chapter 5 presents the beam current response to AM on the 14 GHz ECR ion source for different weights of noble gases, magnetic fields, and vacuum pressures. The beam current amplitude generally decayed exponentially for frequencies higher than around 400 Hz with the modulation highly suppressed at 10 kHz.

Download or read book Oxide Film Formation from Electron Cyclotron Resonance ECR Plasmas written by and published by . This book was released on 1997 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt: The formation of SiO(subscript x) films and fluorine-doped SiO(subscript x) films using electron cyclotron resonance (ECR) plasma deposition is described. Parametric studies of the film composition and hydrogen content as a function of feed gas composition and RF biasing are presented. By replacing SiH4 with SiF4 in the gas feed, samples with F content from 2 at.% F to 12 at.% F are deposited, and the dielectric constant of the deposited layers decrease linearly with increasing fluorine concentration. The stability of these low dielectric constant SiO(subscript x)F{sub y} layers is examined under hydrating conditions, and conditions typically found for interlayer dielectric processing in microelectronics. The hydrogen content of the SiO2 and F-doped SiO2 is characterized as a function of deposition conditions, and a model is given to describe the thermal release of H from SiO2.

Download or read book Plasma Deposition of Amorphous Silicon Based Materials written by Pio Capezzuto and published by Elsevier. This book was released on 1995-10-10 with total page 339 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Focuses on the plasma chemistry of amorphous silicon-based materials Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced Features an international group of contributors Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices