Download or read book Some Effects of Gamma Radiation on Silicon and Silicon Devices written by and published by . This book was released on 1967 with total page 107 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work is based on the use of the Shockley-Read-Hall (SRH) defect theory to predict bulk radiation damage effects in semiconductor materials and devices, and, conversely, the use of radiation data from materials and devices to obtain information on the SRH defect parameters. The experimental work is limited to room-temperature cobalt-60 gamma irradiation of silicon devices and of boron- and phosphorus-doped crucible-grown silicon containing 2 - 8 x 10 to the 17th power oxygen atoms-cm to the minus 3 power; the theory is valid for any semiconductor in any radiation environment as is illustrated by examples utilizing data from the literature. A technique is developed for obtaining defect introduction rates and potentials from resistivity measurements made at a series of radiation fluences. In this technique, all irradiations and measurements are made at a single temperature, thus obviating certain difficulties associated with older techniques that require measurements over a range of temperatures.

Download or read book Some Effects of Gamma Radiation on Silicon and Silicon Devices written by DeWitt Landis and published by . This book was released on 1967 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Radiation Effects on Semiconductor Devices written by Los Alamos Scientific Laboratory and published by . This book was released on 1961 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Radiation Effects in Semiconductor Devices written by Frank Larin and published by . This book was released on 1968 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Effects of Gamma Radiation on Semiconductor Devices for High Temperature Electronics written by Herbert P. Orrick and published by . This book was released on 1981 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Effect of Gamma Radiation on Germanium and Silicon written by Richard A. Rossi and published by . This book was released on 1955 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.

Download or read book Research on the Radiation Effects and Compact Model of SiGe HBT written by Yabin Sun and published by Springer. This book was released on 2017-10-24 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.

Download or read book Space Radiation Effects in Silicon Devices written by W. Rosenzweig and published by . This book was released on 1966 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gamma Radiation Effects in Silicon Solar Cells written by G. Enslow and published by . This book was released on 1958 with total page 37 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ten silicon solar cells were irradiated by 100-curie Co 60 gamma ray source to a dose of 10 to the 7th power r. In-situ measurements of the open-circuit voltage and short-circuit current were obtained. Calculations to predict the performance of silicon solar cells under irradiation were made on the basis of known properties of silicon and on the basis of models of radiation damage in solids. Calculated and experimental results were compared. The electrical characteristics of the solar cells were measured as a function of temperature before and after irradiation. The performance of a silicon solar cell power supply in radiation fields is discussed. (Author).

Download or read book Radiation Effects in Semiconductors and Semiconductor Devices written by V. S. Vavilov and published by Springer. This book was released on 1977 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Effects of Gamma ray Radiation on Electronic Properties of Float zone Silicon written by Nirmalendu Pal and published by . This book was released on 1968 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Technical Abstract Bulletin written by and published by . This book was released on with total page 912 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Research in Progress written by and published by . This book was released on 1967 with total page 756 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Radiation and Strain Effects in Silicon germanium Bipolar Complementary Metal Oxide Semiconductor Technology written by Becca Mary Haugerud and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This work examines the effects of radiation and strain on silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. First, aspects of the various SiGe HBT BiCMOS technologies and the device physics of the SiGe HBT are discussed. The performance advantages of the SiGe HBT over the Si BJT are also presented. Chapter II offers a basic introduction to key radiation concepts. The space radiation environment as well as the two common radiation damage mechanisms are described. An overview of the effects of radiation damage on Si-based semiconductor devices, namely bipolar and CMOS, is also presented. Next, the effects of proton and gamma radiation on a new first-generation SiGe HBT technology are investigated. The results of a differential SiGe HBT LC oscillator subjected to proton irradiation are also presented as a test of circuit-level radiation tolerance. Finally, a technology comparison is made between the results of this work and the three different previously reported SiGe technologies. All reported SiGe HBT technologies to date show acceptable proton radiation tolerance up to Mrad levels. Chapter IV investigates the effects of effects of mechanical planar biaxial strain in SiGe HBT BiCMOS technology. This novel strain method is applied post fabrication, unlike many other straining methods. We report increases in the nFET saturated drain current, transconductance, and effective mobility for an applied strain of 0.123%. The pFET device performance degrades for this type of low-level strain.

Download or read book The Effects of Gamma ray Radiation on Electronic Properties of Float zone Silicon microform written by Pal, Nirmalendu and published by National Library of Canada. This book was released on 1968 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Effect of Nuclear Radiation on Semiconductor Devices written by F. J. Reid and published by . This book was released on 1960 with total page 50 pages. Available in PDF, EPUB and Kindle. Book excerpt: Data are presented on investigations of standard silicon and germanium transistors, diodes, rectifiers, and such devices as unipolar transistors, Esaki diodes, and SiC, GaP, and selenium rectifiers. The data are intended to be sufficiently inclusive to make it valuable as a guide on effects which can be anticipated from nuclear radiation on electronic components utilizing semiconductor devices. (Author).