Download or read book SISPAD 2009 written by and published by . This book was released on 2009 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Computational Electronics written by Dragica Vasileska and published by CRC Press. This book was released on 2017-12-19 with total page 866 pages. Available in PDF, EPUB and Kindle. Book excerpt: Starting with the simplest semiclassical approaches and ending with the description of complex fully quantum-mechanical methods for quantum transport analysis of state-of-the-art devices, Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation provides a comprehensive overview of the essential techniques and methods for effectively analyzing transport in semiconductor devices. With the transistor reaching its limits and new device designs and paradigms of operation being explored, this timely resource delivers the simulation methods needed to properly model state-of-the-art nanoscale devices. The first part examines semiclassical transport methods, including drift-diffusion, hydrodynamic, and Monte Carlo methods for solving the Boltzmann transport equation. Details regarding numerical implementation and sample codes are provided as templates for sophisticated simulation software. The second part introduces the density gradient method, quantum hydrodynamics, and the concept of effective potentials used to account for quantum-mechanical space quantization effects in particle-based simulators. Highlighting the need for quantum transport approaches, it describes various quantum effects that appear in current and future devices being mass-produced or fabricated as a proof of concept. In this context, it introduces the concept of effective potential used to approximately include quantum-mechanical space-quantization effects within the semiclassical particle-based device simulation scheme. Addressing the practical aspects of computational electronics, this authoritative resource concludes by addressing some of the open questions related to quantum transport not covered in most books. Complete with self-study problems and numerous examples throughout, this book supplies readers with the practical understanding required to create their own simulators.
Download or read book Simulation of Transport in Nanodevices written by François Triozon and published by John Wiley & Sons. This book was released on 2016-11-22 with total page 341 pages. Available in PDF, EPUB and Kindle. Book excerpt: Linear current-voltage pattern, has been and continues to be the basis for characterizing, evaluating performance, and designing integrated circuits, but is shown not to hold its supremacy as channel lengths are being scaled down. In a nanoscale circuit with reduced dimensionality in one or more of the three Cartesian directions, quantum effects transform the carrier statistics. In the high electric field, the collision free ballistic transform is predicted, while in low electric field the transport remains predominantly scattering-limited. In a micro/nano-circuit, even a low logic voltage of 1 V is above the critical voltage triggering nonohmic behavior that results in ballistic current saturation. A quantum emission may lower this ballistic velocity.
Download or read book CMOSET Fall 2009 Plenary Business and Technology Track Presentation Slides written by CMOS Emerging Technologies Research and published by CMOS Emerging Technologies. This book was released on with total page 485 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Mixed Signal Circuits written by Thomas Noulis and published by CRC Press. This book was released on 2018-09-03 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: Mixed-Signal Circuits offers a thoroughly modern treatment of integrated circuit design in the context of mixed-signal applications. Featuring chapters authored by leading experts from industry and academia, this book: Discusses signal integrity and large-scale simulation, verification, and testing Demonstrates advanced design techniques that enable digital circuits and sensitive analog circuits to coexist without any compromise Describes the process technology needed to address the performance challenges associated with developing complex mixed-signal circuits Deals with modeling topics, such as reliability, variability, and crosstalk, that define pre-silicon design methodology and trends, and are the focus of companies involved in wireless applications Develops methods to move analog into the digital domain quickly, minimizing and eliminating common trade-offs between performance, power consumption, simulation time, verification, size, and cost Details approaches for very low-power performances, high-speed interfaces, phase-locked loops (PLLs), voltage-controlled oscillators (VCOs), analog-to-digital converters (ADCs), and biomedical filters Delineates the respective parts of a full system-on-chip (SoC), from the digital parts to the baseband blocks, radio frequency (RF) circuitries, electrostatic-discharge (ESD) structures, and built-in self-test (BIST) architectures Mixed-Signal Circuits explores exciting opportunities in wireless communications and beyond. The book is a must for anyone involved in mixed-signal circuit design for future technologies.
Download or read book Dielectrics for Nanosystems 4 Materials Science Processing Reliability and Manufacturing written by Electrochemical society. Meeting and published by The Electrochemical Society. This book was released on 2010 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling of III V Nanoscale Field effect Transistors for Logic Circuits written by Saeroonter Oh and published by Stanford University. This book was released on 2010 with total page 147 pages. Available in PDF, EPUB and Kindle. Book excerpt: As silicon CMOS technology continues to scale down its minimum critical dimension, it becomes increasingly difficult to enhance device switching speed due to fundamental limitations. Innovations in device structure and materials are pursued to accommodate improvement in performance as well as reduction in transistor size. For beyond-22-nm CMOS technology, III-V channel FETs are considered as a compelling candidate for extending the device scaling limit of low-power and high-speed operation, owing to their superb carrier transport properties and recent experimental advancements. In this thesis, device simulation, compact modeling, circuit design, circuit performance assessment and estimation of III-V logic transistors are carried out to study key considerations such as device pitch, parasitics, and the importance of PMOS for circuit-level performance. To effectively connect device characteristics with circuit design, a physics-based compact model for digital logic is constructed. The model encompasses effects such as field-confined and spatially-confined trapezoidal quantum well sub-band energies, gate leakage tunneling current and parasitic capacitance. The developed compact model contains only three fitting parameters and is verified by experiment and circuit simulations. The compact model enables other bodies of work for the purpose of circuit-level design and performance estimation. To demonstrate the capability of the model in a circuit environment we apply the compact model to composite circuits such as FO4 inverter chains and SRAM cache to evaluate and project performance and power trends for beyond-22-nm technology.
Download or read book Silicon Germanium Heterojunction Bipolar Transistors for Mm wave Systems Technology Modeling and Circuit Applications written by Niccolò Rinaldi and published by CRC Press. This book was released on 2022-09-01 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Download or read book Advanced Physics of Electron Transport in Semiconductors and Nanostructures written by Massimo V. Fischetti and published by Springer. This book was released on 2016-05-20 with total page 481 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook is aimed at second-year graduate students in Physics, Electrical Engineering, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Hamiltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quantization and elementary excitations in solids, of the dielectric properties of semiconductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the ‘tricky’ transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green’s functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.
Download or read book Fundamentals of Tunnel Field Effect Transistors written by Sneh Saurabh and published by CRC Press. This book was released on 2016-10-26 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.
Download or read book Stress and Strain Engineering at Nanoscale in Semiconductor Devices written by Chinmay K. Maiti and published by CRC Press. This book was released on 2021-06-29 with total page 275 pages. Available in PDF, EPUB and Kindle. Book excerpt: Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.
Download or read book Advanced CMOS Compatible Semiconductor Devices 18 written by J. A. Martino and published by The Electrochemical Society. This book was released on 2018-05-04 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nanoscale Sensors written by Shibin Li and published by Springer Science & Business Media. This book was released on 2014-01-07 with total page 293 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a comprehensive introduction to nanoscale materials for sensor applications, with a focus on connecting the fundamental laws of physics and the chemistry of materials with device design. Nanoscale sensors can be used for a wide variety of applications, including the detection of gases, optical signals, and mechanical strain, and can meet the need to detect and quantify the presence of gaseous pollutants or other dangerous substances in the environment. Gas sensors have found various applications in our daily lives and in industry. Semiconductive oxides, including SnO2, ZnO, Fe2O3, and In2O3, are promising candidates for gas sensor applications. Carbon nanomaterials are becoming increasingly available as “off-the-shelf” components, and this makes nanotechnology more exciting and approachable than ever before. Nano-wire based field- effect transistor biosensors have also received much attention in recent years as a way to achieve ultra-sensitive and label-free sensing of molecules of biological interest. A diverse array of semiconductor-based nanostructures has been synthesized for use as a photoelectrochemical sensor or biosensor in the detection of low concentrations of analytes. A novel acoustic sensor for structural health monitoring (SHM) that utilizes lead zirconate titanate (PZT) nano- active fiber composites (NAFCs) is described as well.
Download or read book Miniaturized Transistors written by Lado Filipovic and published by MDPI. This book was released on 2019-06-24 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt: What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.
Download or read book Fundamentals of III V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Download or read book Future Trends in Microelectronics written by Serge Luryi and published by John Wiley & Sons. This book was released on 2013-06-13 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: Leaders in the field predict the future of the microelectronics industry This seventh volume of Future Trends in Microelectronics summarizes and synthesizes the latest high-level scientific discussions to emerge from the Future Trends in Microelectronics international workshop, which has occurred every three years since 1995. It covers the full scope of cutting-edge topics in microelectronics, from new physical principles (quantum computing, correlated electrons), to new materials (piezoelectric nanostructures, terahertz plasmas), to emerging device technologies (embedded magnetic memories, spin lasers, and biocompatible microelectronics). An ideal book for microelectronics professionals and students alike, this volume of Future Trends in Microelectronics: Identifies the direction in which microelectronics is headed, enabling readers to move forward with research in an informed, efficient, and profitable manner Includes twenty-nine contributor chapters by international authorities from leading universities, major semiconductor companies, and government laboratories Provides a unified, cohesive exploration of various trends in microelectronics, looking to future opportunities, rather than past successes
Download or read book Advanced Semiconductor on Insulator Technology and Related Physics 15 written by Yasuhisa Omura and published by The Electrochemical Society. This book was released on 2011-04 with total page 347 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the continuation of the long running ¿Silicon-on-Insulator Technology and Devices¿ symposium. The issue of ECS Transactions covers recent significant advances in SOI technologies, SOI-based nanoelectronics and innovative applications including scientific interests. It will be of interest to materials and device scientists, as well as to process and applications oriented engineers and scientists.
