Download or read book Single crystal Germanium Growth on Amorphous Silicon written by Kevin A. McComber and published by . This book was released on 2011 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: The integration of photonics with electronics has emerged as a leading platform for microprocessor technology and the continuation of Moore's Law. As electronic device dimensions shrink, electronic signals encounter crippling delays and heating issues such that signal transduction across large on-chip distances becomes increasingly more difficult. However, these issues may be mitigated by the use of photonic interconnects combined with electronic devices in electronic-photonic integrated circuits (EPICs). The electronics in proposed EPIC designs perform the logic operations and short-distance signal transmission, while photonic devices serve to transmit signals over longer lengths. However, the photonic devices are large compared to electronic devices, and thus the two types of devices would ideally exist on separate levels of the microprocessor stack in order to maximize the amount of silicon substrate available for electronic device fabrication. A CMOS-compatible back-end process for the fabrication of photonic devices is necessary to realize such a three-dimensional EPIC. Back-end processing is limited in thermal budget and does not present a single-crystal substrate for epitaxial growth, however, so high-quality crystal fabrication methods currently used for photonic device fabrication are not possible in back-end processing. This thesis presents a method for the fabrication of high-quality germanium single crystals using CMOS-compatible back-end processing. Initial work on the ultra-high vacuum chemical vapor deposition of polycrystalline germanium on amorphous silicon is presented. The deposition can be successfully performed by using a pre-growth hydrofluoric acid dip and by limiting the thickness of the amorphous silicon layer to less than 120 nm. Films deposited at temperatures of 350° C, 450° C, and 550° C show (110) texture, though the texture is most prevalent in growths at 450° C. Poly-Ge grown at 4500 C is successfully doped n-type in situ, and the grain size of as-grown material is enhanced by lateral growth over a barrier. Structures are fabricated for the growth of Ge confined in one dimension. The growths show faceting across large areas, in contrast to as-deposited poly-Ge, corresponding to enhanced grain sizes. Growth confinement is shown to reduce the defect density as the poly-Ge grows. When coalesced into a continuous film, the material grown from 1 D confinement exhibits a lower carrier density and lower trap density than as-deposited poly-Ge, indicating improved material quality. We measure an increased grain size from as-deposited poly-Ge to Ge grown from ID confinement. Single-crystal germanium is grown at 450° C from confinement in two dimensions. Such growths exhibit faceting across the entire crystal as well as the presence of E3 boundaries ({111} twins), with many growths showing no other boundaries. These twins mediate the growth of the crystal, as they serve as the points for heterogeneous surface nucleation of adatom clusters. The twins can form after the crystal nucleates and are strongly preferred in order to obtain appreciable crystal growth rates. We model the growths from the confining channels in order to find the optimum channel geometry for large, uniform, single-crystal growths that consistently emerge from the channel. The growths from 2D confinement show lower trap density than those from 1 D confinement, indicating a further enhancement of the crystal quality due to the increased confinement. This method of single-crystal growth from an amorphous substrate is extensible to any materials system in which selective non-epitaxial deposition is possible.
Download or read book Silicon Germanium and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevic
Download or read book Single Crystal Growth and Characterization of Silicon Germanium Alloys written by Tilghman Lee Rittenhouse and published by . This book was released on 1999 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rapid Melt Growth of Silicon Germanium for Heterogeneous Integration on Silicon written by Hwei Yin Serene Koh and published by Stanford University. This book was released on 2011 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon has made modern integrated circuit technology possible. As MOSFET gate lengths are scaled to 22nm and beyond, it has become apparent that new materials must be introduced to the silicon-based CMOS process for improved performance and functionality. This dissertation begins with a review of the MOSFET leakage current problem and presents one potential solution: Band-to-Band Tunneling (BTBT) transistors, which have the potential for steeper subthreshold slopes because they do not have the fundamental 'kT/q' limit in the rate at which conventional MOSFETs can be turned on or off. It is clear that these devices must be fabricated in materials with smaller bandgaps for improved performance. Silicon Germanium (SiGe) is one possible material system that could be used to fabricate enhanced BTBT transistors. Rapid Melt Growth (RMG) is a technique that has been used to recrystallize materials on Si substrates. RMG, however, has not previously been applied to SiGe, a binary alloy with large separation in the liquidus-solidus curve in its phase diagram. The development of process and experimental results for obtaining SiGe-on-insulator (SGOI) from bulk Si substrates through RMG are presented. The theory of RMG is analyzed and compositional profiles obtained during RMG of SiGe are modeled to understand why we were able to obtain high quality lateral compositionally graded SGOI substrates. The success of RMG SiGe suggests that the RMG technique can also be applied to III-V ternary and quaternary compounds with similar pseudo-binary phase diagrams. This opens up a wide range of material possibilities with the potential for novel applications in heterogeneous integration and 3-D device technology.
Download or read book Oriented Crystallization on Amorphous Substrates written by E.I. Givargizov and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: Present-day scienceand technology have become increasingly based on studies and applications of thin films. This is especiallytrue of solid-state physics, semiconduc tor electronics, integrated optics, computer science, and the like. In these fields, it is necessary to use filmswith an ordered structure, especiallysingle-crystallinefilms, because physical phenomena and effects in such films are most reproducible. Also, active parts of semiconductor and other devices and circuits are created, as a rule, in single-crystal bodies. To date, single-crystallinefilms have been mainly epitaxial (or heteroepitaxial); i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip. However, as the size decreases into the submicrometer range, technological and physical limitations in integrated electronics become more and more severe. It is generally believed that a feature size of about 0.1um will have a crucial character. In other words, the present two-dimensional ICs are anticipated to reach their limit of minimization in the near future, and it is realized that further increase of packing density and/or functions might depend on three-dimensional integration. To solve the problem, techniques for preparation of single-crystalline films on arbitrary (including amorphous) substrates are essential.
Download or read book Growth of Crystals written by E. Givargizov and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present volume continues the tradition of previous issues in covering all the main divisions in the science of crystal growth: growth from vapor, solution, and melt. At the same time, it reflects the recent tendency to more detailed research on solid -state crystal lization. In compiling the collection, preference has been given to papers that not only present novel scientific results but also contain surveys of the published data, although certain of the papers are purely original ones and some are purely of review character. The need for these surveys is dictated by at least two circumstances. First, there is an ongoing expan sion of specialized publications on crystal growth and, correspondingly, there is an increase in the volume of the publications requiring review. Second, rapid advances in crystal mak ing for various purposes (particularly microelectronics and quantum electronics) have meant that many important facts and observations on crystal formation are dispersed in numerous unspecialized publications and thus in part are lost to fundamental science.
Download or read book Growth of Crystals written by E.I. Givargizov and published by Springer. This book was released on 1991-03-31 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, as the previous ones, consists primarily of review artic1es. However, it also contains a large quantity of original material on the growth of crystals and films. Priority is given to experimental work. Only two artic1es are concerned exc1usively with the theory of crystal growth. Theoretical aspects are treated in several others. This volume is divided into three parts. Part I, "Epitaxy and Transformations in Thin Films," stems from the current broad application of lasers and optical effects in general to crystal growth (in particular, the growth of thin films). The first three artic1es of the book are devoted to this topic. In particular, the laser pulse vaporization method, for which a comparatively slow deposition rate is typical (which should not always be viewed as a drawback), is distinguished by the unique kinetics of the initial growth stages. These are not entirely explained. However, this method is completely suitable for oriented or generally ordered growth of films under otherwise equal conditions. Another artic1e of this section is based on use of ultrashort (down to picosecond) laser pulses. It emphasizes the nonequilibrium processes of crystallization and decrystallization that are characteristic for such influences. In particular, material heated above its melting point and metastable states in the semiconductor melt exhibit these qualities.
Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Download or read book Handbook of Photovoltaic Silicon written by Deren Yang and published by Springer. This book was released on 2019-11-28 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The utilization of sun light is one of the hottest topics in sustainable energy research. To efficiently convert sun power into a reliable energy – electricity – for consumption and storage, silicon and its derivatives have been widely studied and applied in solar cell systems. This handbook covers the photovoltaics of silicon materials and devices, providing a comprehensive summary of the state of the art of photovoltaic silicon sciences and technologies. This work is divided into various areas including but not limited to fundamental principles, design methodologies, wafering techniques/fabrications, characterizations, applications, current research trends and challenges. It offers the most updated and self-explanatory reference to all levels of students and acts as a quick reference to the experts from the fields of chemistry, material science, physics, chemical engineering, electrical engineering, solar energy, etc..
Download or read book Silicon Epitaxy written by and published by Elsevier. This book was released on 2001-09-26 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
Download or read book Amorphous and Heterogeneous Silicon Thin Films written by and published by . This book was released on 2000 with total page 1204 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1990 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Crystal Growth and Evaluation of Silicon for VLSI and ULSI written by Golla Eranna and published by CRC Press. This book was released on 2014-12-08 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text: Describes different techniques used to grow silicon single crystals Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication Reviews different methods to evaluate silicon wafers to determine suitability for device applications Analyzes silicon wafers in terms of resistivity and impurity concentration mapping Examines the effect of intentional and unintentional impurities Explores the defects found in regular silicon-crystal lattice Discusses silicon wafer preparation for VLSI and ULSI processing Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.
Download or read book A Study on Radial and Axial Temperature Effects on the Growth of Bulk Single Crystal of Silicon x Germanium 1 x in Bridgman Setting written by Mehdi M. Shemirani and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth of Crystals written by E.I. Givargizov and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 213 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, as the previous ones, consists primarily of review artic1es. However, it also contains a large quantity of original material on the growth of crystals and films. Priority is given to experimental work. Only two artic1es are concerned exc1usively with the theory of crystal growth. Theoretical aspects are treated in several others. This volume is divided into three parts. Part I, "Epitaxy and Transformations in Thin Films," stems from the current broad application of lasers and optical effects in general to crystal growth (in particular, the growth of thin films). The first three artic1es of the book are devoted to this topic. In particular, the laser pulse vaporization method, for which a comparatively slow deposition rate is typical (which should not always be viewed as a drawback), is distinguished by the unique kinetics of the initial growth stages. These are not entirely explained. However, this method is completely suitable for oriented or generally ordered growth of films under otherwise equal conditions. Another artic1e of this section is based on use of ultrashort (down to picosecond) laser pulses. It emphasizes the nonequilibrium processes of crystallization and decrystallization that are characteristic for such influences. In particular, material heated above its melting point and metastable states in the semiconductor melt exhibit these qualities.
Download or read book SERI Photovoltaic Advanced Research and Development Bibliography 1982 1985 written by and published by . This book was released on 1986 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Crystal Growth Bibliography written by and published by Springer Nature. This book was released on 1981 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:
