Download or read book Single and Double Heterojunction Bipolar Transistors in Collector up Topology written by and published by . This book was released on 1910 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: For the first time, DC- and RF characteristics of single and double heterojunction bipolar transistors (S-HBT and D-HBT respectively) in collector-up topology are measured and compared. Both devices are realized in InGaP/GaAs technology and offer high common emitter breakdown voltage (BVceo> 16V) and high maximum oscillation frequency (fmax> 115GHz).

Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.

Download or read book Current Trends In Heterojunction Bipolar Transistors written by M F Chang and published by World Scientific. This book was released on 1996-01-29 with total page 437 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.

Download or read book Study and Realization of InGaP GaAs collector Up Double Heterojunction Bipolar Transistors for High Performance RF Applications written by Achim Henkel and published by . This book was released on 1998 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Wide Bandgap Collector III V Double Heterojunction Bipolar Transistors written by Richard M. Flitcroft and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Base collector Junction Barrier Effect of InP Double Heterojunction Bipolar Transistors written by Basuki R. A. Sugeng and published by . This book was released on 1993 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modeling and Simulation of Single and Double Heterojunction Bipolar Transistors for Power Applications written by Wen Liu and published by . This book was released on 1994 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High Frequency Bipolar Transistors written by Michael Reisch and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.

Download or read book Heterojunction Bipolar Transistors for Circuit Design written by Jianjun Gao and published by John Wiley & Sons. This book was released on 2015-04-27 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods

Download or read book Investigation of GaInP GaAs Double Heterojunction Bipolar Transistors for Microwave Power Amplifier Applications written by Pin-Fan Chen and published by . This book was released on 2001 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design Simulation and Modeling of Collector up GalnP GaAs Heterojunction Bipolar Transistors written by Mohan K. Chirala and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The immense demand for communication systems world wide has created an enormous market for semiconductors devices in variegated applications. While scaled CMOS is consolidating its stronghold in the analog and RF domains, the wide gamut of microwave frequencies is being competed for by the various types of III-V heterojunction based semiconductor devices, which were made amenable to high-volume production, thanks to rapid improvements in bulk-processing and fabrication techniques in the last decade. Among these devices, the quest for faster, more powerful and low cost transistors has led researchers to investigate innovative topologies. The availability of powerful CAD tools that incorporate the most intricate physical phenomenon in the modeling process has provided a much needed impetus to this ongoing research. Of the scores of disparate devices that have been investigated, Heterojunction Bipolar Transistors (HBTs) have carved a niche for themselves owing to their high speeds and greater power handling capabilities. In this work, the design of an innovative HBT with a collector-up topology, i.e., with the collector situated on top of the device and emitter on the substrate side, is carried out and optimized for maximizing the high frequency performance. The material system used here is Ga x In 1-x P/GaAs (with x=0.51 indicating lattice matched composition), which has relatively superior material properties and etching characteristics than the conventional Al x Ga 1 -xAs/GaAs material system. The material properties of the ternary were investigated and the most suitable values were ascertained through meticulous research. These parameters, along with the mobility models (that were derived by investigating published results), were made compatible to an emitter-up HBT and incorporated into a two dimensional, physically-based, numerical simulator called ATLAS by Silvaco Inc. The motive was to verify the correctness of the material parameters and models derived. The simulation results compared favorably with the published results. With these verified material parameters and mobility models, a collector-up GaInP/GaAs HBT structure with unetched extrinsic emitter was simulated. After a performance appraisal with the emitter-up structure, the impact of having an undercut in the extrinsic base region was investigated. It was found that this undercut drastically improved the high frequency performance as well as DC characteristics of the collector-up structure. This was documented by a significant increase in cutoff frequency (f T) from 109 GHz to 140 GHz. It was even more pronounced in maximum frequency of oscillation (f max), which is more practically useful than cutoff frequency, from 76 GHz to 233 GHz. These simulation results are much better than the practically experimented values. The high frequency parametric values described here were achieved after scrupulously optimizing the collector-up HBT structure.

Download or read book Design Characterisation and Numerical Simulation of Double Heterojunction Bipolar Transistors for Microwave Power Applications written by Mohammed Sotoodeh and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Study of InGaP GaAs InGaP Composite Collector Double Heterojunction Bipolar Transistor and GaAs Delta doped Emitter Bipolar Junction Transistor written by Kim Luong Lew and published by . This book was released on 2004 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design and Realization of Bipolar Transistors written by Peter Ashburn and published by . This book was released on 1988-08-18 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses new developments in the design and fabrication of bipolar transistors for high-speed digital circuits. Covers advances in silicon technology (such as polysilicon emitters and self-aligned fabrication techniques), gallium arsenide technology (such as extremely high-performance MSI circuits resulting from the development of GaAs/GaAlAs heterojunctions), and new applications of bipolar transistors (such as optoelectronic circuits). Also deals with optimization of bipolar devices and processes for high-speed, digital circuits by means of a quasi-analytical expression for the gate delay of an ECL logic gate. Includes case studies.

Download or read book Effect of High Voltage Heterojunction Bipolar Transistor Collector Design on F T and F MAX written by and published by . This book was released on 1999 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt: High-speed InGaP/GaAs heterojunction bipolar transistors (HBTs) for high-voltage circuit applications have been investigated. In order to obtain ideal IV characteristics, a lightly doped (N{sub DC} = 7.5 x 1015 cm−3) thick (W{sub C} = 3.5 [mu]m) layer of GaAs was used as the collector layer. The devices fabricated have shown breakdown voltage exceeding 65 V. Device operated at up to a 60V bias, which is the highest operating voltage reported up to date for single heterojunction HBTs. Peak {line_integral}{sub T} and {line_integral}{sub MAX} values of 18 GHz and 29 GHz, respectively, have been achieved on a device with emitter area of 4x 12.5 [mu]m2. Both {line_integral}{sub T} and {line_integral}{sub Max} degrades with higher bias, which is related to the elongation of the collector depletion width.

Download or read book SiGe GaAs and InP Heterojunction Bipolar Transistors written by Jiann S. Yuan and published by Wiley-Interscience. This book was released on 1999-04-12 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, comprehensive guide to heterojunction bipolar transistor technology. Owing to their superior performance in microwave and millimeter-wave applications, heterojunction bipolar transistors (HBTs) have become a major force in mobile and wireless communications. This book offers an integrated treatment of SiGe, GaAs, and InP HBTs, presenting a much-needed overview of HBTs based on different materials systems-their fabrication, analysis, and testing procedures. Highly respected expert Jiann S. Yuan discusses in depth the dc and RF performance and modeling of HBT devices, including simulation, thermal instability, reliability, low-temperature and high-temperature performance, and HBT analog and digital circuits. He provides step-by-step presentations of HBT materials-including Si HBTs and III-V and IV-IV compound HBTs, which are rarely described in the literature. Also covered are device and circuit interaction as well as specific high-speed devices in mobile and wireless communications. This immensely useful guide to a rapidly expanding field includes more than 200 figures, tables of different material systems in terms of their physical parameters, and up-to-date experimental results culled from the latest research. An essential resource for circuit and device designers in the semiconductor industry, SiGe, GaAs, and InP Heterojunction Bipolar Transistors is also useful for graduate students in electrical engineering, applied physics, and materials science.

Download or read book Long Term Reliability of High Speed Sige Si Heterojunction Bipolar Transistors written by National Aeronautics and Space Administration (NASA) and published by Createspace Independent Publishing Platform. This book was released on 2018-06-20 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt: Accelerated lifetime tests were performed on double-mesa structure Si/Si0.7Ge0.3/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175C-275C. Both single- and multiple finger transistors were tested. The single-finger transistors (with 5x20 micron sq m emitter area) have DC current gains approximately 40-50 and f(sub T) and f(sub MAX) of up to 22 GHz and 25 GHz, respectively. The multiple finger transistors (1.4 micron finger width, 9 emitter fingers with total emitter area of 403 micron sq m) have similar DC current gain but f(sub T) of 50 GHz. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of the devices at room temperature is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation. SiGe/Si based amplifier circuits were also subjected to lifetime testing and we extrapolate MTTF is approximately 1.1_10(exp 6) hours at 125iC junction temperature from the circuit lifetime data. Ponchak