Download or read book Simulations of Silicon Carbide Chemical Vapor Deposition written by Örjan Danielsson and published by . This book was released on 2002 with total page 173 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Simulation based Design Optimization and Control of Silicon Carbide and Gallium Nitride Thin Film Chemical Vapor Deposition Reactor Systems written by Rinku Pankaj Parikh and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Computational Fluid Dynamics Modeling of SiC Chemical Vapor Deposition written by Yingquan Song and published by . This book was released on 2002 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt: Computational fluid dynamics (CFD) modeling is used to simulate chemical vapor deposition (CVD) of silicon carbide (SiC), a wide-band gap semiconductor with a high breakdown field. The effects on SiC CVD of precursor concentration, flow rate, temperature, pressure, heat transfer and reactor geometry are investigated. Also demonstrates the possibilty of doping SiC with solid source vanadium during CVD growth of SiC epitaxial layers.
Download or read book Modeling of Chemical Vapor Deposition Reactors for Silicon Carbide and Diamond Growth written by Maria Ann Kuczmarski and published by . This book was released on 1992 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thermal Plasma Chemical Vapor Deposition of Silicon Carbide Films written by Feng Liao and published by . This book was released on 2004 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Numerical Modeling of Growth Conditions for Thin film Silicon Carbide in an Experimental Vertical Chemical Vapor Deposition Reactor written by Willie A. Givens and published by . This book was released on 1991 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gas Phase and Surface Modeling of Chemical Vapor Deposition of Pyrolytic Carbon on Silicon Carbide Fibers Using a Pure Methane Precursor written by Rajesh Balachandran and published by . This book was released on 2011 with total page 115 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ceramic matrix composites (CMC) constitute a category of composite materials widely used in the aerospace industry as they satisfy the thermal, chemical and mechanical requirements of a good composite material with the drawback being in the high processing costs. Chemical vapor deposition is a process long known for its importance in aerospace and structural applications. Chemical vapor deposition can be used to develop thin interfacial coatings on fibers, which are reinforced in to a matrix according to the application. The interfacial layers are useful for preventing reactions between the fibers and the matrix material at high temperatures. Interfacial coatings can also deflect crack propagation once the composite is put into service. This work focuses on developing a suitable gas phase and surface kinetics model for obtaining the deposition profiles in the chemical vapor deposition of pyrocarbon on silicon carbide fibers at the given conditions of temperature, pressure and feed rate. The model uses an existing gas phase mechanism (National Institute for Standards and Technology and Gas Research Institute). There are combinations of species in the gas phase, but all of them do not lead to the deposition of pyrocarbon. This raises a question as to which of them would affect the rate of deposition and why. For the given conditions of temperature, pressure and flow rate and from the information available in different literature sources acetylene is assumed to be the major depositing specie of pyrocarbon Also, the gas phase mechanism was modified to simplify and suit the needs of the given conditions. The importance behind modeling the surface kinetics is that it could help understand the actual process in the formation of pyrolytic carbon. The mechanism of the pyrocarbon deposition could be important in knowing the type of carbon being deposited, which is of utmost importance in its applications. The modeling data is validated by means of using data obtained from experiments.
Download or read book Modeling of Chemical Vapor Deposition of Tungsten Films written by Chris R. Kleijn and published by Birkhäuser. This book was released on 2013-11-11 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor equipment modeling has in recent years become a field of great interest, because it offers the potential to support development and optimization of manufacturing equipment and hence reduce the cost and improve the quality of the reactors. This book is the result of two parallel lines of research dealing with the same subject - Modeling of Tungsten CVD processes -, which were per formed independently under very different boundary conditions. On the one side, Chris Kleijn, working in an academic research environment, was able to go deep enough into the subject to laya solid foundation and prove the validity of all the assumptions made in his work. On the other side, Christoph Werner, working in the context of an industrial research lab, was able to closely interact with manufacturing and development engineers in a modern submicron semiconductor processing line. Because of these different approaches, the informal collaboration during the course of the projects proved to be extremely helpful to both sides, even though - or perhaps because - different computer codes, different CVD reactors and also slightly different models were used. In spite of the inconsistencies which might arise from this double approach, we feel that the presentation of both sets of results in one book will be very useful for people working in similar projects.
Download or read book A Kinetic and Equilibrium Analysis of Silicon Carbide Chemical Vapor Deposition on Monofilaments written by Suleyman Akif Gokoglu and published by . This book was released on 1993 with total page 14 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design and Development of a Silicon Carbide Chemical Vapor Deposition Reactor written by Matthew T. Smith and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: The design and development of a reactor to make this process controlled and repeatable can be accomplished using theoretical and empirical tools. Fluid flow modeling, reactor sizing, low-pressure pumping and control are engineering concepts that were explored. Work on the design and development of an atmospheric pressure cold-wall CVD (APCVD) reactor will be presented. A detailed discussion of modifications to this reactor to permit hot-wall, low-pressure CVD (LPCVD) operation will then be presented. The consequences of this process variable change will be discussed as well as the necessary design parameters. Computational fluid dynamic (CFD) calculations, which predict the flow patterns of gases in the reaction tube, will be presented. Feasible CVD reactor design that results in laminar fluid flow control is a function of the prior mentioned techniques and will be presented.
Download or read book Synthesis of Silicon Carbide by Chemical Vapor Deposition written by T. Hirai and published by . This book was released on 1983 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics and Technology of Silicon Carbide Devices written by Yasuto Hijikata and published by BoD – Books on Demand. This book was released on 2012-10-16 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.
Download or read book Chemical Vapor Deposition written by Electrochemical Society. High Temperature Materials Division and published by The Electrochemical Society. This book was released on 1997 with total page 1686 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Vapor Deposition of Silicon Carbide written by Schyi-yi Wu and published by . This book was released on 1977 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book CVD XV written by Mark Donald Allendorf and published by The Electrochemical Society. This book was released on 2000 with total page 826 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Full Simulation of Silicon Chemical Vapor Deposition Process written by and published by . This book was released on 2000 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical vapor deposition (CVD) process composes a complex system, where chemical reaction and heat and mass transfer interact with each other. And these macro-scale phenomena are deeply related to micro-scale mechanics. Hence multi-scale analysis is required to understand these complicated phenomena and to develop full-scale simulator of the CVD reactor. In this paper, we present the macro-scale simulation by the DSMC method. In those reactors, sometime the important species such as the reactive intermediates have extremely low density ratio. This causes the large statistical fluctuation in the DSMC method, where the number of particles and the calculation time are limited. We propose a new numerical method for this kind of problem and the whole process of silicon CVD is simulated by the new method. We simulate the following CVD process: the gas mixture of silane and hydrogen forms a free expansion jet through a nozzle orifice at the top of the reactor and interact with the heated substrate that is set vertical to flow, where silane decomposes into silylene and silane and silylene deposit onto the surface. It is confirmed that the new method is very effective and make it possible to analyze the CVD process more precisely.
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
