Download or read book Simulation of Thermal Effects in Semiconductor Materials and Devices written by and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Transient Electro Thermal Modeling on Power Semiconductor Devices written by Tanya Kirilova Gachovska and published by Springer Nature. This book was released on 2022-06-01 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.
Download or read book Modeling Self Heating Effects in Nanoscale Devices written by Katerina Raleva and published by Morgan & Claypool Publishers. This book was released on 2017-09-13 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: It is generally acknowledged that modeling and simulation are preferred alternatives to trial and error approaches to semiconductor fabrication in the present environment, where the cost of process runs and associated mask sets is increasing exponentially with successive technology nodes. Hence, accurate physical device simulation tools are essential to accurately predict device and circuit performance. Accurate thermal modelling and the design of microelectronic devices and thin film structures at the micro- and nanoscales poses a challenge to electrical engineers who are less familiar with the basic concepts and ideas in sub-continuum heat transport. This book aims to bridge that gap. Efficient heat removal methods are necessary to increase device performance and device reliability. The authors provide readers with a combination of nanoscale experimental techniques and accurate modelling methods that must be employed in order to determine a device's temperature profile.
Download or read book Thermal and Electro Thermal System Simulation written by Márta Rencz and published by MDPI. This book was released on 2019-11-18 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: With increasing power levels and power densities in electronics systems, thermal issues are becoming more and more critical. The elevated temperatures result in changing electrical system parameters, changing the operation of devices, and sometimes even the destruction of devices. To prevent this, the thermal behavior has to be considered in the design phase. This can be done with thermal end electro-thermal design and simulation tools. This Special Issue of Energies, edited by two well-known experts of the field, Prof. Marta Rencz, Budapest University of Technology and Economics, and by Prof. Lorenzo Codecasa, Politecnico di Milano, collects twelve papers carefully selected for the representation of the latest results in thermal and electro-thermal system simulation. These contributions present a good survey of the latest results in one of the most topical areas in the field of electronics: The thermal and electro-thermal simulation of electronic components and systems. Several papers of this issue are extended versions of papers presented at the THERMINIC 2018 Workshop, held in Stockholm in the fall of 2018. The papers presented here deal with modeling and simulation of state-of-the-art applications that are highly critical from the thermal point of view, and around which there is great research activity in both industry and academia. Contributions covered the thermal simulation of electronic packages, electro-thermal advanced modeling in power electronics, multi-physics modeling and simulation of LEDs, and the characterization of interface materials, among other subjects.
Download or read book Analysis and Simulation of Semiconductor Devices written by S. Selberherr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.
Download or read book Physics based Thermal Impedance Models for the Simulation of Self heating in Semiconductor Devices and Circuits written by Jonathan Brodsky and published by . This book was released on 1997 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: Inherent in the operation of semiconductor devices is self-heating, an increase in operating temperature due to a device's own power dissipation. The magnitude of the self-heating effect can be quantified by the value of the thermal impedance, which describes the dynamic response of the device temperature to variations in device power. The thermal impedance is determined primarily by material properties and device structure. The implication of the self-heating effect is that the change in temperature can alter the operating characteristics of a device, which in turn, can affect circuit performance. The primary focus of this dissertation is the development of physics-based models for the thermal impedances of semiconductor devices. Models for the thermal impedances of bipolar and field-effect transistors, on both bulk and silicon-on-insulator (SOI) substrates, are presented. All of the thermal impedance models were derived from the time-dependent heat conduction equation, resulting in compact analytic expressions for the thermal impedances. The physical nature of the thermal impedance models allows them to scale with the device structure and material properties, and they successfully reproduce results from both measurements and three-dimensional finite-element simulations. A circuit model for thermal coupling between transistors in a common substrate is also presented. The coupling model was used in conjunction with the bulk bipolar thermal impedance model to extract a lumped electrothermal model for multiple-emitter bipolar transistors. The secondary objective of this work is the provision of an approach for incorporating these models into circuit simulators. It has been shown that the thermal impedance models can be represented by thermal equivalent circuits made up of resistors and capacitors, making them suitable for efficient circuit simulation. The computer program TIPP (Thermal Impedance Pre-Processor) is introduced. TIPP was developed to provide circuit simulators with convenient algorithms for generating thermal equivalent circuits. TIPP can calculate the component values for thermal equivalent circuits from either physical models or measured data, and is easily modified to interface with different circuit simulators.
Download or read book Simulation of Semiconductor Devices and Processes written by Heiner Ryssel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 515 pages. Available in PDF, EPUB and Kindle. Book excerpt: SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.
Download or read book Nanophononics written by Zlatan Aksamija and published by CRC Press. This book was released on 2017-11-22 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heat in most semiconductor materials, including the traditional group IV elements (Si, Ge, diamond), III–V compounds (GaAs, wide-bandgap GaN), and carbon allotropes (graphene, CNTs), as well as emerging new materials like transition metal dichalcogenides (TMDCs), is stored and transported by lattice vibrations (phonons). Phonon generation through interactions with electrons (in nanoelectronics, power, and nonequilibrium devices) and light (optoelectronics) is the central mechanism of heat dissipation in nanoelectronics. This book focuses on the area of thermal effects in nanostructures, including the generation, transport, and conversion of heat at the nanoscale level. Phonon transport, including thermal conductivity in nanostructured materials, as well as numerical simulation methods, such as phonon Monte Carlo, Green’s functions, and first principles methods, feature prominently in the book, which comprises four main themes: (i) phonon generation/heat dissipation, (i) nanoscale phonon transport, (iii) applications/devices (including thermoelectrics), and (iv) emerging materials (graphene/2D). The book also covers recent advances in nanophononics—the study of phonons at the nanoscale. Applications of nanophononics focus on thermoelectric (TE) and tandem TE/photovoltaic energy conversion. The applications are augmented by a chapter on heat dissipation and self-heating in nanoelectronic devices. The book concludes with a chapter on thermal transport in nanoscale graphene ribbons, covering recent advances in phonon transport in 2D materials. The book will be an excellent reference for researchers and graduate students of nanoelectronics, device engineering, nanoscale heat transfer, and thermoelectric energy conversion. The book could also be a basis for a graduate special topics course in the field of nanoscale heat and energy.
Download or read book Simulation of Semiconductor Devices and Processes written by Siegfried Selberherr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.
Download or read book 3D TCAD Simulation for Semiconductor Processes Devices and Optoelectronics written by Simon Li and published by Springer Science & Business Media. This book was released on 2011-10-01 with total page 303 pages. Available in PDF, EPUB and Kindle. Book excerpt: Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD. This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D. It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations. Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc.
Download or read book Semiconductor Device Physics and Simulation written by J.S. Yuan and published by Springer Science & Business Media. This book was released on 1998-05-31 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.
Download or read book Thermal Effects and Analysis of High Frequency Devices in Analog Integrated Circuit Design written by Ardasheir Sayek Rahman and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Heterojunction Bipolar Junction Transistors (HBTs) are used in various high frequency applications in modern day technology. These devices produce high trans-conductance which is need for high frequency application. Their gain is significantly larger than complimentary metal-oxide-semiconductor (CMOS) devices which also imply there is high current within the devices. Since HBTs are very compact structure, the thermal heating generated within the devices needs to be characterized. This thesis explores the thermal effects from self heating in the static and time domains of the devices using 3D dimensional simulation and mathematical modeling using heat flow equation. The study concentrates on the thermal modeling aspects of the heterojunction bipolar transistors using the TCAD 3-dimensional thermal simulation. Die concentration and operational speed of transistors are rapidly increasing because of high market a demand, which can lead to thermal runaway complication and current crowding effect. The susceptibility of transistors to temperature change requires a more sensitive and accurate modeling for the thermal effects of the device. The heat source is the junction between base and lightly doped collector. This heat gets trapped within the device because of the presence of isolation oxide sidewalls and bottom oxide layer. The thermal impedance depends on the position of the heat source, its separation from the sidewalls and bottom oxide, as well as the thickness of the oxide wall and bottom. The thickness of the wafer also changes the thermal heating effect. The spreading resistance from the heat source to the sidewalls and bottom oxide, to the wafer, and then to ambient temperature has been calculated using the heat flow equation. The results are then compared to TCAD simulation. The mathematical model was within 10% when compared to the 3D TCAD simulation. The model presented in this work is based on an extension of the constant angle heat spreading, resulting in closed form expressions which can be used for practical applications. The electrical analogy developed from the thermal analysis can be used in VBIC, HICUM and MEXTRAM compact models, which are used to model the behavior of HBTs. Solder bump packaging results to the formation of a thermal equivalent transmission line for the heat flow from the heat source to the ambient temperature at the bumps. This paper analyses the effect of thermal heating when devices are connected using solder bumps. TCAD simulation is performed and mathematical model is developed to support the 3-D simulation result. The thermal impedance depends on the length of line from the heat source to the solder bumps, which is modeled by using electrical transmission line analogy. Closer the solder bump is to the device smaller is be thermal resistance, other tactics are discussed which can reduce the thermal resistance. An infinitely long line results in a static characteristic impedance for the line. The equivalent electrical analogy for the thermal transmission line is modeled which can be implemented in standard device modeling s like HICUM, VBIC or METRAM.
Download or read book Simulation of Thermal Effects in Electrical Systems written by Christian H. Brzezinski and published by . This book was released on 1989 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Wide Bandgap Semiconductor Materials and Devices 16 written by S. Jang and published by The Electrochemical Society. This book was released on 2015 with total page 347 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Simulation of Semiconductor Processes and Devices 2004 written by Gerhard Wachutka and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 387 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
Download or read book Modeling Self Heating Effects in Nanoscale Devices written by Katerina Raleva and published by Morgan & Claypool Publishers. This book was released on 2017-09-13 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: It is generally acknowledged that modeling and simulation are preferred alternatives to trial and error approaches to semiconductor fabrication in the present environment, where the cost of process runs and associated mask sets is increasing exponentially with successive technology nodes. Hence, accurate physical device simulation tools are essential to accurately predict device and circuit performance. Accurate thermal modelling and the design of microelectronic devices and thin film structures at the micro- and nanoscales poses a challenge to electrical engineers who are less familiar with the basic concepts and ideas in sub-continuum heat transport. This book aims to bridge that gap. Efficient heat removal methods are necessary to increase device performance and device reliability. The authors provide readers with a combination of nanoscale experimental techniques and accurate modelling methods that must be employed in order to determine a device's temperature profile.
Download or read book Device and Circuit Cryogenic Operation for Low Temperature Electronics written by Francis Balestra and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt: Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed. Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.
