Download or read book Simulation of Silicon Carbide MESFET Using Analytical Modeling and Synopsis Software for High Power and High Frequency Performance written by Puneet Pandey and published by . This book was released on 2007 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Simulation of Silicon Carbide Metal Semiconductor Field Effect Transistor Using Analytical Modeling for High Frequency and Time Delay written by Dhyaneshwar Murugesan and published by . This book was released on 2011 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book An Improved Analytical Model of 4H SiC MESFET for Designing the Device for High Frequency and High power Applications written by Janet Arikian and published by . This book was released on 2021 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide is capable of delivering superior physical characteristics under cavil circumstances because of its inherent broad band gap, high critical breakdown field, high thermal conductivity, and high electron situation drift velocity. Due to its superior quality of high power and low loss, 4H-SiC MESFETs are gradually implemented in designing for High frequency and high power, new energy vehicle and locomotive traction, and so on. In this report, an analytical model is developed to evaluate and analyze many device electrical properties, such as I-V characteristics, transconductance including threshold d voltage, gate-to-source, and gate-to-drain capacitances, and specific-on resistance and cutoff frequency. Meanwhile, it presents more approaches to study how the variation of fabrication parameters such as doping energy level and ion dose density impacts the power and frequency performance for 4H-SiC based MESFETs devices. The model has been analyzed to study I-V characteristics, internal gate capacitances (Gate-to-source and gate-to-drain capacitances), transconductance, specific-on resistance, and cutoff-frequency simulation and analysis. The drain-to-source current reveals its variety along with the change of gate-to-source voltages, which goes up to 70A. Secondly, the ion dose intensity Q significantly affects the internal gate capacitances, which is valuable for evaluating the submicron MESFETS gate model performance under a typical fabrication setup. In addition, transconductance simulation results are obtained by the variation with disparate ion dose densities, which is agreeing well with published theoretical and experimental results. Besides, along with the gradual increase of N-drift layer concentration density, the specific-on resistance has reached to a value of 70ohm. μm2which is very promising property of power device. Lastly, the cutoff and maximum frequencies are 14 GHz and 35 GHz, respectively, with the development of fabrication to implement smaller gate length, if the gate length would be available to narrow down to blow 0.5μm, it has the potential to breakthrough 100 GHz to implement the super high-frequency application, which is also observed from the simulation results.
Download or read book Silicon Carbide SiC Based MESFET Similation for High Power and High Frequency Performance Using MATLAB written by Bhavik Patel and published by . This book was released on 2015 with total page 81 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this project, the explanation of analytical modeling of ion implanted silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs) has been described. This model has been designed to determine the drain-source current, threshold voltage, intrinsic parameters such as gate capacitance, transconductance and, drain-source resistance bearing in mind different fabrication parameters such as annealing, ion energy, ion dose, and ion range. The model helps in getting the ion implantation fabrication parameters using the optimization of the effective implanted channel thickness for different ion doses arising to the preferred pitch off voltage for high breakdown voltage and high drain current. A study on gate-to-drain and gate-to-source capacitance, drain-source resistance and transconductance was done to determine the device frequency response.
Download or read book Analytical Modeling of 4H silicon Carbide Based MESFET with Trapping Effects written by Chirayu Shah and published by . This book was released on 2017 with total page 64 pages. Available in PDF, EPUB and Kindle. Book excerpt: 4H-Silicon Carbide metal semiconductor effect transistor has a massive possible popular high-power device at microwave frequencies because of their extensive band-gap structures of high electrical breakdown field strength, high electron saturation velocity and high operational temperature. A physics-based analytical model of Silicon Carbide based MESFETs has been developed considering high-purity semi-insulating substrates to find the interaction of traps influence between the channel and substrates. I-V characteristics with the influence of traps and without traps, I-V characteristics with field dependent mobility and the transconductance with traps and without traps have been evaluated to understand the power aided efficiency and frequency performance.
Download or read book Analytical Model of SiC Based Mesfet for Determination of Device Frequency and Noise written by Srikanth Veesam and published by . This book was released on 2016 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt: Preceding a couple of years, a lot of work has been done for wide band gap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN). Silicon Carbide (SiC) as a wide band gap material is used in many applications due to its high temperature, high breakdown field, higher power and high saturation velocity. The main objective of this graduate project is to study the electrical parameters extracted from analytical model. In order to develop an accurate modeling of 4H-SiC MESFET, the drain current has been evaluated for linear and non-linear regimes to obtain the I-V characteristics. The linear and non-linear regimes in the I-V characteristics increase the accuracy of the model for any short channel FET device. The transfer characteristics has been evaluated to determine the threshold voltage confirming the depletion mode. The spectral power density has been evaluated to find the influence of the spectral power density on frequency response of 4H-SiC MESFET, which is a vital study to determine the power aided efficiency (PAE). The characteristics of spectral power density and cut-off frequency determine the device performance for maximum power output and maximum frequency performance are elucidated in the spectral power density plot.
Download or read book Physics Based Analytical Model for Silicon Carbide Metal Semiconductor Field effect Transistors for Microwave Frequency Applications written by Bodhisattwa Samanta and published by . This book was released on 2013 with total page 38 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this paper, the author presents a physics based analytical modeling and simulation of ion implanted silicon carbide Schottky gate FET. The model has been developed to compute the drain-source current, intrinsic parameters such as, gate capacitances, drain-source resistance and transconductance taking into account of different fabrication parameters such as doping concentration of active channel, doping constant, mobility, the correlation between active channel depth and pinch off voltage and other physical parameters. The physics based analytical model for a non self-aligned SiC MESFET shows different intrinsic and extrinsic parameters reflecting the microwave frequency applications.
Download or read book Simulation of Sic MESFET Using Synopsys Sentaurus TCAD Tools for High Power and High Frequency Analysis written by Chih Yuan Cheng and published by . This book was released on 2011 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics based Analytical Model for Silicon Carbide MESFET with a New Concept of Charge Conserving Capacitance written by Kiran Kumar Rambappagari and published by . This book was released on 2013 with total page 48 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this project, a physics-based analytical model for silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs) has been developed and presented. The gate capacitances such as gate-source capacitance and gate-drain capacitance were determined by considering various terminal charges with respect to the voltages at source, drain, and gate. The gate capacitance has been determined for linear and non-linear regions. This study is extremely valuable for SiC MESFETs to find their cut-off and maximum frequencies from the gate capacitance model. The gate-source and gate-drain capacitances show extremely attractive values, justifying the use of SiC MESFET as a high frequency device.
Download or read book Analytical Modeling of Silicon Carbide Metal Semiconductor Field Effect Transistor written by Balasubramaniyam Keelapudi and published by . This book was released on 2012 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt: This study concentrates on analytical modeling of a silicon carbide MESFET device using MATH Lab software.
Download or read book A Physics Based Frequency Dispersion Model of SiC MESFET written by Srikanth Movva and published by . This book was released on 2018 with total page 53 pages. Available in PDF, EPUB and Kindle. Book excerpt: This project involves in determining the frequency response considering the effect of transconductance and gate capacitance by developing an analytical model of Silicon Carbide (SiC) MESFETs device. The dispersion characteristics are observed to be dependent on bulk traps effects. I-V characteristics of SiC MESFET have been evaluated to determine the power-aided efficiency and switching performance from the linearity and linearity behaviors of drain current. The significant change of drain current, transconductance and gate-source capacitance have been observed due to the bulk traps effects on charge carrier reflecting GHz frequency performance of SiC MESFET device. The results of device performance simulated by MatLab tool have been described chronologically in the result and discussion chapter.
Download or read book Simulation of Optically Controlled SiC silicon Carbide Mesfet Using Analytical Modeling of High Frequency Response and Switching Applications written by Abhishek Bhagat and published by . This book was released on 2012 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this project, an analytical modeling of optically controlled Silicon Carbide has been presented here for an analysis of extrinsic and intrinsic parameters such as, gate capacitances including both of the gate-source capacitances, gate-drain capacitances and switching speed under dark and illumination conditions and also the switching frequency considering different fabrication parameters such as ion dose, ion energy and ion range parameters, channel length and active channel depth. These parameters have been incorporated in the model to understand the better effect of dark intensity and illumination condition to optimize the fabrication parameter and physical parameters.
Download or read book Large Signal Modeling of Silicon Carbide Submicron MESFET Based on Analytical ion Implanted Physic Based Model written by Yan N. Linn and published by . This book was released on 2013 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt: The ion implantation based analytical model of submicron Silicon Carbide transistor is developed to report large signal model (I-V characteristic) and small signal model (gate source capacitance and gate drain capacitance along with unity gain frequency) with respect to different gate to source voltages and drain to source voltages. The threshold voltage variation with respect to the ion doses is also studied. To minimize the lattice damages during ion implantation process, the shallow channel doping model is proposed. The fitting of compact MESFET structure using Curtice model in advanced design system (ADS) is utilized to create the spice model of transistor for RF and Microwave Power Amplifier circuits' simulator. The maximum available unity gain frequency for the modeled device (gate length: 0.8um with shallow channel) is 67GHz, and the maximum oscillating frequency is 81GHz. The maximum (unmatched) available gain is 14.4dB, 8.7dB, and 3.9dB at 2.4GHz (UHF), 10GHz (SHF), and 52GHz (EHF) respectively. The minimum noise figure of the proposed model is also discussed in this project report.
Download or read book A Three Region Analytical Model for Short Channel Silicon Carbide SiC MESFET s written by Rahul Reddy Kambalapally and published by . This book was released on 2013 with total page 52 pages. Available in PDF, EPUB and Kindle. Book excerpt: This project presents an improved analytical model of the three regions in a SiC metal semiconductor field effect transistor(MESFET). The analytical model mainly focuses on two regions in the active channel that are between gate-source and drain-source. The third region gate-drain (which is ungated) is ignored in this analytical model due to the very large potential drop at high drain voltages in a short channel device. In order to improve the accuracy in this model, the parasitic resistance and incomplete ionization of dopants have been incorporated. Considering these effects in the analytical model, a simulation of the current and voltage characteristics and transfer characteristics of the Silicon Carbide MESFET has been developed and discussed in detailed in this thesis.
Download or read book Simulation of Temperature Effects on GaN MESFET written by Feng Liang and published by . This book was released on 2014 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since several years ago, semiconductor materials the band gap of which is wide, including Gallium Nitride (GaN) & Silicon Carbide (SiC), have been very promising in the applications of fabricating devices of high power, high temperature and microwave frequency as the characteristics of high breakdown voltages & low thermal generation rates. However, the performance of devices made from these materials is strongly influenced by the ambient temperature. In order to analyze the temperature effects, an analytical physical model is adopted in this paper to determine the temperature-dependent characteristics, including current-voltage characteristic, current-temperature characteristic and saturation electron drift velocity-temperature characteristic, which are also simulated through MATLAB software. Based on these characteristics, the device performance can be anticipated and device structure can be optimized.
Download or read book 4H SiC Integrated Circuits for High Temperature and Harsh Environment Applications written by Mihaela Alexandru and published by . This book was released on 2014 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly used for applications where Silicon is limited, becoming a proper material for both unipolar and bipolar power device able to work under high power, high frequency and high temperature conditions. Aside from the outstanding theoretical and practical advantages still to be proved in SiC devices, the need for more accurate models for the design and optimization of these devices, along with the development of integrated circuits (ICs) on SiC is indispensable for the further success of modern power electronics. The design and development of SiC ICs has become a necessity since the high temperature operation of ICs is expected to enable important improvements in aerospace, automotive, energy production and other industrial systems. Due to the last impressive progresses in the manufacturing of high quality SiC substrates, the possibility of developing ICs applications is now feasible. SiC unipolar transistors, such as JFETs and MESFETs show a promising potential for digital ICs operating at high temperature and in harsh environments. The reported ICs on SiC have been realized so far with either a small number of elements, or with a low integration density. Therefore, this work demonstrates that by means of our SiC MESFET technology, multi-stage digital ICs fabrication containing a large number of 4H-SiC devices is feasible, accomplishing some of the most important ICs requirements. The ultimate objective is the development of SiC digital building blocks by transferring the Si CMOS topologies, hence demonstrating that the ICs SiC technology can be an important competitor of the Si ICs technology especially in application fields in which high temperature, high switching speed and harsh environment operations are required. The study starts with the current normally-on SiC MESFET CNM complete analysis of an already fabricated MESFET. It continues with the modeling and fabrication of a new planar-MESFET structure together with new epitaxial resistors specially suited for high temperature and high integration density. A novel device isolation technique never used on SiC before is approached. A fabrication process flow with three metal levels fully compatible with the CMOS technology is defined. An exhaustive experimental characterization at room and high temperature (300oC) and Spice parameter extractions for both structures are performed. In order to design digital ICs on SiC with the previously developed devices, the current available topologies for normally-on transistors are discussed. The circuits design using Spice modeling, the process technology, the fabrication and the testing of the 4H-SiC MESFET elementary logic gates library at high temperature and high frequencies are performed. The MESFET logic gates behavior up to 300oC is analyzed. Finally, this library has allowed us implementing complex multi-stage logic circuits with three metal levels and a process flow fully compatible with a CMOS technology. This study demonstrates that the development of important SiC digital blocks by transferring CMOS topologies (such as Master Slave Data Flip-Flop and Data-Reset Flip-Flop) is successfully achieved. Hence, demonstrating that our 4H-SiC MESFET technology enables the fabrication of mixed signal ICs capable to operate at high temperature (300oC) and high frequencies (300kHz). We consider this study an important step ahead regarding the future ICs developments on SiC. Finally, experimental irradiations were performed on W-Schotthy diodes and mesa-MESFET devices (with the same Schottky gate than the planar SiC MESFET) in order to study their radiation hardness stability. The good radiation endurance of SiC Schottky-gate devices is proven. It is expected that the new developed devices with the same W-Schottky gate, to have a similar behavior in radiation rich environments.
Download or read book Physics Based Analytical Model of Silicon Carbide MESFET with Effective Drift Velocity and Mobility written by Rishitej Reddy Byravarapu and published by . This book was released on 2015 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt: An analytical model of silicon carbide based MESFET has been developed to evaluate the frequency response from an intensive study of the I-V characteristics and intrinsic parameters. The I-V characteristics have been determined by the channel charge in the linear and non-linear regimes. The transconductance has been computed in the saturation region to determine its properties contributing to the cut-off frequency response. The gate-source capacitance and gate-drain capacitance under saturation condition have been calculated in the frame of this model. The cut off frequency has been evaluated by using the transconductance and gate capacitance and the anticipated cut-off frequency is expected to obtain in the order of GHz range due the properties of wide bandgap semiconductor.
