Download or read book Simulation of High Speed GaAs Devices Using TCAD Tools written by Hua Ma and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Technology Computer Aided Design for Si SiGe and GaAs Integrated Circuits written by G.A. Armstrong and published by IET. This book was released on 2007-11-30 with total page 457 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to deal with a broad spectrum of process and device design, and modeling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-development engineers and scientists involved in microelectronics technology and device design via Technology CAD, and TCAD engineers and developers.

Download or read book GaAs High Speed Devices written by C. Y. Chang and published by John Wiley & Sons. This book was released on 1994-10-28 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.

Download or read book Computer Simulation of GaAs and SOI Devices Using TCAD Tools an REU Project written by and published by . This book was released on 1910 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: An undergraduate research project is outlined whose goal was to use the TCAD tools to simulate the performances of GaAs- and SOI-based devices and to compare them with the corresponding silicon-based devices. Students used the Silvaco Corporation's "Virtual Wafer Fab" (VWF) package consisting of process simulation software called ATHENA, device layout software called DevEdit and device simulation software called ATLAS to simulate GaAs, SOI as well as conventional silicon devices. They explored the capabilities of these TCAD programs for five different GaAs and SOI devices including short-and long-channel JFETs, digital GaAs E-MESFETs, HEMTs and SOI BJTs.

Download or read book GaAs Devices and Circuits written by Michael S. Shur and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.

Download or read book High Speed GaAs Device and Integrated Circuit Modelling and Simulation written by Tzu-Hung Chen and published by . This book was released on 1984 with total page 450 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Analysis and Simulation of Heterostructure Devices written by Vassil Palankovski and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

Download or read book Simulation Design and Fabrication of Thin film Resistive gate GaAs Charge Coupled Devices written by and published by . This book was released on 1990 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: Computer simulation of high-speed Gallium Arsenide Charge Coupled Devices is performed using the two-dimensional semiconductor device simulation program BAMBI (Basic Analyzer for Mos and BIpolar devices). The effect of active layer thickness and doping concentration on the Charge Transfer Efficiency (CTE) and the dynamic range is investigated using different active layers. Also, different gate architectures are compared for optimum dynamic range and compatibility with GaAs MESFET technology. Both Capacitive Gate CCD (CGCCD) and Resistive Gate CCD (RGCCD) are considered. The measured performance of the fabricated GaAs CCD is compared with modelled results. 2 refs., 2 figs.

Download or read book Design and Simulation of Ultra High Speed GaAs Integrated Circuits written by Philip Nord Jenkins and published by . This book was released on 1989 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Handbook for III V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Download or read book Test Methods and Custom Hardware for Functional Testing of a High Speed GaAs DRAM written by Michael P. Butler and published by . This book was released on 1993 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goal of this project is to produce a digital circuit operating near a frequency of 250 MHz to test a new experimental Gallium Arsenide (GaAs) Dynamic Random Access Memory (DRAM). This thesis presents the design of the digital circuit using 'off-the-shelf Emitter Coupled Logic (ECL) and the design of a six layer printed circuit test fixture. The use of ECL is illustrated including general design rules, high speed design considerations, and basic transmission line theory. Finally, the design is laid out, and simulated using commercially available Computer Aided Design (CAD) and Computer Aided Manufacturing (CAM) tools. Examples and shortcomings of schematic capture, logic simulation, PCB design, and auto-routing are discussed as applicable to fabrication of the final product.

Download or read book Introducing Technology Computer Aided Design TCAD written by Chinmay K. Maiti and published by CRC Press. This book was released on 2017-03-16 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: This might be the first book that deals mostly with the 3D technology computer-aided design (TCAD) simulations of major state-of-the-art stress- and strain-engineered advanced semiconductor devices: MOSFETs, BJTs, HBTs, nonclassical MOS devices, finFETs, silicon-germanium hetero-FETs, solar cells, power devices, and memory devices. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including design for manufacturing (DFM), and from device modeling to SPICE parameter extraction. The book also offers an innovative and new approach to teaching the fundamentals of semiconductor process and device design using advanced TCAD simulations of various semiconductor structures. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. To extend the role of TCAD in today’s advanced technology era, process compact modeling and DFM issues have been included for design–technology interface generation. Unique in approach, this book provides an integrated view of silicon technology and beyond—with emphasis on TCAD simulations. It is the first book to provide a web-based online laboratory for semiconductor device characterization and SPICE parameter extraction. It describes not only the manufacturing practice associated with the technologies used but also the underlying scientific basis for those technologies. Written from an engineering standpoint, this book provides the process design and simulation background needed to understand new and future technology development, process modeling, and design of nanoscale transistors. The book also advances the understanding and knowledge of modern IC design via TCAD, improves the quality in micro- and nanoelectronics R&D, and supports the training of semiconductor specialists. It is intended as a textbook or reference for graduate students in the field of semiconductor fabrication and as a reference for engineers involved in VLSI technology development who have to solve device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simulation system, in addition to presenting many case studies where the user applies TCAD tools in different situations.

Download or read book Analysis and Simulation of Heterostructure Devices written by Vassil Palankovski and published by Springer. This book was released on 2012-12-22 with total page 289 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

Download or read book Test Methods and Custom Hardware for Functional Testing of a High Speed GaAs DRAM written by Michael P. Butler and published by . This book was released on 1993 with total page 72 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goal of this project is to produce a digital circuit operating near a frequency of 250 MHz to test a new experimental Gallium Arsenide (GaAs) Dynamic Random Access Memory (DRAM). This thesis presents the design of the digital circuit using 'off-the-shelf Emitter Coupled Logic (ECL) and the design of a six layer printed circuit test fixture. The use of ECL is illustrated including general design rules, high speed design considerations, and basic transmission line theory. Finally, the design is laid out, and simulated using commercially available Computer Aided Design (CAD) and Computer Aided Manufacturing (CAM) tools. Examples and shortcomings of schematic capture, logic simulation, PCB design, and auto-routing are discussed as applicable to fabrication of the final product.

Download or read book Physics of Semiconductor Devices written by K. N. Bhat and published by Alpha Science Int'l Ltd.. This book was released on 2004 with total page 1310 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contributed papers of the workshop held at IIT, Madras, in 2003.

Download or read book Physics of Semiconductor Devices 99 written by Vikram Kumar and published by SPIE-International Society for Optical Engineering. This book was released on 2000 with total page 780 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Extreme Environment Electronics written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 1041 pages. Available in PDF, EPUB and Kindle. Book excerpt: Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.