Download or read book Simulating Radiation Induced Defects on Semiconductor Devices written by Dewey C. Gladney and published by . This book was released on 2004-09-01 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt: Exploring semiconductor lifetime, reliability and performance is a never-ending science for today's modern electronics. One significant problem that affects all of these areas is radiation-induced damage. Making calculations to determine how semiconductor devices will hold up in radiation-harsh environments has to be achieved in order to determine system lifetime once placed in their operational capacity. Today's high-technology investments in such areas as satellite design, medical advances, military and commercial hardware, demand thorough understanding in radiation damage. Modeling semiconductor devices with computer-based simulation will provide a cost and time savings over a repetitive design and testing sequence. This thesis models and simulates an industry standard solar cell and a light a light emitting diode (LED), using the SILVACO ATLAS(trade mark) computer-based program. Using this software, theses simulations are generated based on known radiation-induced defects on gallium arsenide (GaAs) semiconductive devices derived from Deep Level Transient Spectroscopy (DLTS) studies. A comparison is then made with another radiation-induced damage prediction method, known as Non-Ionizing Energy Loss (NIEL), to see if the SILVACO ATLAS(trade mark) models can be used as an alternative.

Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.

Download or read book Radiation Effects in Semiconductors and Semiconductor Devices written by V. S. Vavilov and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ionizing Radiation Effects in Electronics written by Marta Bagatin and published by CRC Press. This book was released on 2018-09-03 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ionizing Radiation Effects in Electronics: From Memories to Imagers delivers comprehensive coverage of the effects of ionizing radiation on state-of-the-art semiconductor devices. The book also offers valuable insight into modern radiation-hardening techniques. The text begins by providing important background information on radiation effects, their underlying mechanisms, and the use of Monte Carlo techniques to simulate radiation transport and the effects of radiation on electronics. The book then: Explains the effects of radiation on digital commercial devices, including microprocessors and volatile and nonvolatile memories—static random-access memories (SRAMs), dynamic random-access memories (DRAMs), and Flash memories Examines issues like soft errors, total dose, and displacement damage, together with hardening-by-design solutions for digital circuits, field-programmable gate arrays (FPGAs), and mixed-analog circuits Explores the effects of radiation on fiber optics and imager devices such as complementary metal-oxide-semiconductor (CMOS) sensors and charge-coupled devices (CCDs) Featuring real-world examples, case studies, extensive references, and contributions from leading experts in industry and academia, Ionizing Radiation Effects in Electronics: From Memories to Imagers is suitable both for newcomers who want to become familiar with radiation effects and for radiation experts who are looking for more advanced material or to make effective use of beam time.

Download or read book Semiconductor Radiation Physics From Defects to Devices written by and published by . This book was released on 2005 with total page 57 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiation effects have been a serious problem for electronics used in defense and space systems for decades and radiation-hardened devices, circuits, and systems have been developed to meet the needs of these systems. However, many of the fundamental physical mechanisms responsible for radiation-induced degradation were not elucidated, which limits the ability to extend the hardening methods to future generations of technology. This MURI program combined recently developed atomic-scale computational techniques and physical-analysis tools with an engineering approach to analyzing radiation effects in electronics. The computational work focused on using density functional theory to understand problems such as the enhanced low dose rate sensitivity of irradiated bipolar junction transistors and the fundamental mechanisms responsible for interface-trap formation. Several experimental techniques, including second harmonic generation and cathodoluminescence spectroscopy, were adapted to analyzing radiation-induced defects. The radiation response of advanced technologies, including GaAs- and GaN-based transistors, vertical cavity surface emitting lasers, and ultrathin dielectrics, was evaluated experimentally. All of these technologies appear promising for use in future defense and space systems.

Download or read book Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices written by Ronald D Schrimpf and published by World Scientific. This book was released on 2004-07-29 with total page 349 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.

Download or read book New Methodology for First Principle Calculations of Electrical Levels for Radiation Induced Defects in Silicates written by and published by . This book was released on 2005 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report results from a contract tasking University College London as follows: The contractor shall develop a material simulation model and code. This model will be applied to study the geometric and electronic structure, stability and properties of defects in SiO2 dielectrics in semiconductor devices. Specifically, the contractor will deliver: 1. A robust set of force-field. embedding potential (pseudo potential), basis set, shell model that will: (a) Reproduce faithfully the lattice parameters for alpha quartz; and (b) Reproduce faithfully the dielectric constant for SiO2. 2. A set of calculations on important intrinsic defects including: (a) The oxygen vacancy (in + and o charge states) in both crystalline and amorphous SiO2; (b) atomic hydrogen (in + o and - charge states); (c) Self-trapped hole in amorphous SiO2 (model calculations for selected sites); and (d) Self-trapped exciton in crystalline SiO2.

Download or read book Radiation Induced Effects in Semiconductor Devices written by Shrinivasrao Kulkarni and published by LAP Lambert Academic Publishing. This book was released on 2013 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt: When semiconductor devices operate in a radiation environment (ex: space), they undergo severe degradation. The degradation behaviour is a complex process and is dependent not only on the nature of the device but also on the radiation characteristics viz., dose, dose rate, species and the energy of radiation. The study of the effect of radiation on semiconductor devices is important both from the academic as well as technological point of view. Academically it is very important to have an understanding of the physical mechanism of the damage process and technologically it is important to assess the device performance when they need to be operated in the radiation environment. This book involves the study of radiation induced effects in Bipolar Junction Transistors planned for space applications. The devices exposed to electromagnetic radiation, 8 MeV electrons and 24 MeV protons are characterized before and after irradiation to understand the radiation induced degradation mechanism. Apart from discrete devices, heavy ion induced effects on a few space borne VLSI devices have also been carried out and results are discussed. In addition to this, some simulation results are discussed.

Download or read book Radiation Effects and Ion beam Processing of Materials written by Lu-Min Wang and published by . This book was released on 2004 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt: The catastrophic effect, as well as a potentially advantageous effect, from energetic beams is the instant high-energy deposition in a local volume, down to the nanoscale, and the rapid cooling processes resulting in changes in the structure and properties of materials that are hard to achieve by other methods. The challenging balance between controlling radiation damage and enhancing material properties has intrigued materials scientists and physicists, as well as engineers in the nuclear and semiconductor industry, and caused them to work closely together for many years. As clearly demonstrated in this volume, many new technologies for creating unique functional devices with energetic particle beams are based on the fundamental study of radiation-induced defect production and evolution. Scientists and engineers working in nuclear engineering, environmental sciences and functional materials share a common language and numerous opportunities for collaboration in this truly interdisciplinary area. Exciting and promising results are presented here, including the most recent progress in fundamental understanding of radiation effects using molecular dynamic (MD) and kinetic Monte Carlo (kMC) simulations, processing of monodisperse nanoparticles by ion implantation, production of a wide variety of nanostructures with the application of focused ion beams (FIB), and creating new types of nanoscale functional devices using high-energy ion tracks. These results demonstrate the important relation between fundamental research on radiation effects and the development of new types of nanoscale functional devices using energetic particles over a wide energy range. Topics include: radiation effects in nuclear materials; ion-beam processing of nanostructures; ion-beam processing of semiconductor devices; ion-beam modification of physical properties; modeling and computer simulation of beam-solid interactions; and ion-beam-assisted deposition and surface modification.

Download or read book Radiation Effects on Embedded Systems written by Raoul Velazco and published by Springer Science & Business Media. This book was released on 2007-06-19 with total page 273 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume provides an extensive overview of radiation effects on integrated circuits, offering major guidelines for coping with radiation effects on components. It contains a set of chapters based on the tutorials presented at the International School on Effects of Radiation on Embedded Systems for Space Applications (SERESSA) that was held in Manaus, Brazil, November 20-25, 2005.

Download or read book Radiation Induced Modification of Materials written by Hardev Singh Virk and published by Trans Tech Publications Ltd. This book was released on 2015-08-20 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: The irradiation of materials with energetic particles has significant effects on the properties of target materials. In addition to the well-known detrimental effects of irradiations, they have also some beneficial effects on the properties of materials. Irradiation effect can change the morphology of the materials in a controlled manner and tailor their mechanical, structural, optical and electrical properties. Irradiation induced modifications in the properties of materials can be exploited for many useful applications. This 2nd volume on Radiation Effects considers the importance of Radiation Induced Modifications of Materials. It includes 9 Papers written by experts in this field on a variety of subjects.

Download or read book Proceedings from the Second Workshop on Radiation Induced And or Process Related Electrically Active Defects in Semiconductor Systems written by and published by . This book was released on 1989 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ionizing Radiation Effects in MOS Devices and Circuits written by T. P. Ma and published by John Wiley & Sons. This book was released on 1989-04-18 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.

Download or read book Reliability And Radiation Effects In Compound Semiconductors written by Allan H Johnston and published by World Scientific. This book was released on 2010-04-27 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. It starts with first principles, and shows how advances in device design and manufacturing have suppressed many of the older reliability mechanisms.It is the first book that comprehensively covers reliability and radiation effects in optoelectronic as well as microelectronic devices. It contrasts reliability mechanisms of compound semiconductors with those of silicon-based devices, and shows that the reliability of many compound semiconductors has improved to the level where they can be used for ten years or more with low failure rates.

Download or read book Photo induced Defects in Semiconductors written by David Redfield and published by Cambridge University Press. This book was released on 2006-03-09 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the authors present properties of DX and EL2 centers in IIISHV compounds. They also deal with additional crystalline materials before giving a detailed description of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. The book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors.

Download or read book Transduction Characterization of Robust Wurtzite Wide bandgap Semiconductor Devices Under Irradiation written by Thomas Alan Heuser and published by . This book was released on 2021 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiation-induced failure of electronic devices is one of the most significant barriers to human exploration of space. In order to successfully operate in these radiation-rich environments, it is necessary that we consider moving to new materials systems and device architectures that can inherently resist ionizing radiation-induced degradation. This dissertation presents results of the fabrication and testing of several different device architectures fabricated using wide-bandgap wurtzite-structured semiconductor materials that are known to be radiation-hard and that have been subjected to different types of ionizing radiation. The first two chapters of this dissertation discuss the need for radiation-hard electronics, examine the state-of-the-art for radiation hardening of electronics, discuss common types of radiation, their effects on materials, and the environments in which they are typically found, and explain the comparative advantages of wide-bandgap semiconductor materials vs conventional semiconductors for use in environments rich in ionizing radiation. Next, a growth process for indium aluminum nitride/gallium nitride (InAlN/GaN) thin-film heterostructures is demonstrated. Advantages relative to more developed aluminum gallium nitride/gallium nitride (Al-GaN/GaN) heterostructures are explained, fabrication challenges and solutions are discussed, and Scanning Electron Microscopy (SEM), x-ray diffraction (XRD) and Hall effect measurements are used to qualitatively and quantitatively compare the quality of films produced with different growth conditions. Then, design, fabrication, and testing of GaN-on-Silicon betavoltaic energy harvesters is presented. These devices were fabricated using a triple mesa etch technique and tested under irradiation by an electron beam tuned to simulate the beta emission spectrum of 63Ni, in lieu of the isotope itself. These results represent, at time of publication and to the best of the author's knowledge, the highest recorded experimentally-measured efficiency for a GaN-based betavoltaic device. Afterwards, design and testing of thin-film zinc oxide (ZnO) semiconductor-on-insulator (SOI) metal-semiconductor-metal (MSM) ultraviolet photodetectors is discussed. The ZnO films were grown on an insulating silicon dioxide (SiO2) substrate using atomic layer deposition, fabricated into devices, and subjected to proton irradiation while held at temperatures ranging from -25°C to 70°C. UV photocurrent transient measurements were taken using a 365 nm LED. The resulting data were then fit to a stretched exponential function to find decay time constants, which were then used with an Arrhenius equation to extract defect activation energies. These energies were then compared to known values from literature to tentatively identify the defects resulting from different irradiation conditions. It was determined that even small changes in temperature produced noticeable, long-term changes in resulting defect structures that affected device performance even months after irradiation. This dissertation concludes by proposing several avenues for potential future work, including optimization of film growth and device design, testing of both the betavoltaic devices and the UV photodetectors in real radiation environments, and development of specialized gettering techniques to help prevent the accumulation of radiation-induced point defects, reducing their detrimental effect on device performance.

Download or read book Computational Characterization of Radiation induced Defect Dynamics and Material Response written by Miaomiao Jin and published by . This book was released on 2019 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt: Material degradation due to radiation damage poses serious concern on the reliability and durability of any reactor design. To understand material performance under the extreme environments combining high temperature and intense irradiation, the response of radiation damage must be meticulously analyzed, both experimentally and computationally. These efforts will not only bridge the knowledge gap in the fundamental understanding of physical processes, but also allow for prediction of material behavior under a variety of conditions and development of novel materials with superior radiation tolerance. This thesis investigates multiple aspects of radiation damage in materials using various computational methods over a wide range of time and length scale, including atomistic description of defect dynamics, multiscale simulations of radiation processes, and artificial intelligence prediction of material responses based on experimental studies. Firstly, to resolve the fundamental mechanisms of radiation-induced behavior, the traditional molecular dynamics simulations on single-atom damage cascade is extended by developing an algorithm to appropriately introduce numerous consecutive cascades; hence, an experimental dose level on the order of dpa (displacement per atom) can be achieved to enable realistic understanding of observed material responses. It has been utilized to examine the radiation behaviors in solid-solution alloys and nanocrystalline metals such as defect dynamics and grain boundary migration. Secondly, to break the intrinsic limitation of scale in atomistic simulations, a multiscale microstructural evolution framework that links binary-collision approximation, molecular dynamics and cluster dynamics is built to describe mesoscale experimental observations. It is used to successfully explain the non-power-law defect distribution in irradiated tungsten. This tool can be generalized to study the spatial dependent defect evolution in materials under ion irradiation. Finally, to bypass the physics-based complexity of describing materials evolution in real applications, a holistic view enabled by machine learning techniques is utilized, and applied to predict the onset of void swelling in metals with a manually collection of data from experimental studies. The model has generated satisfying results for prediction of unseen data based on material properties and experimental parameters.