Download or read book Silicon Non Volatile Memories written by Barbara de Salvo and published by John Wiley & Sons. This book was released on 2013-05-10 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor flash memory is an indispensable component of modern electronic systems which has gained a strategic position in recent decades due to the progressive shift from computing to consumer (and particularly mobile) products as revenue drivers for Integrated Circuits (IC) companies. This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different "evolutionary paths" based on the use of new materials (such as silicon nanocrystals for storage nodes and high-k insulators for active dielectrics) and of new transistor structures (such as multi-gate devices) are investigated in order to extend classical floating gate technology to the 32 nm node. "Disruptive paths" based on new storage mechanisms or new technologies (such as phase-change devices, polymer or molecular cross-bar memories) are also covered in order to address 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developments in this area.
Download or read book Nonvolatile Memories written by Tseung-Yuen Tseng and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book VLSI Design of Non Volatile Memories written by Giovanni Campardo and published by Springer Science & Business Media. This book was released on 2005-01-18 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI-Design for Non-Volatile Memories is intended for electrical engineers and graduate students who want to enter into the integrated circuit design world. Non-volatile memories are treated as an example to explain general design concepts. Practical illustrative examples of non-volatile memories, including flash types, are showcased to give insightful examples of the discussed design approaches. A collection of photos is included to make the reader familiar with silicon aspects. Throughout all parts of this book, the authors have taken a practical and applications-driven point of view, providing a comprehensive and easily understood approach to all the concepts discussed. Giovanni Campardo and Rino Micheloni have a solid track record of leading design activities at the STMicroelectronics Flash Division. David Novosel is President and founder of Intelligent Micro Design, Inc., Pittsburg, PA.
Download or read book Charge Trapping Non Volatile Memories written by Panagiotis Dimitrakis and published by Springer. This book was released on 2017-02-14 with total page 211 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.
Download or read book Logic Non volatile Memory The Nvm Solutions For Ememory written by Hsu Charles Ching-hsiang and published by World Scientific. This book was released on 2014-03-18 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt: Would you like to add the capabilities of the Non-Volatile Memory (NVM) as a storage element in your silicon integrated logic circuits, and as a trimming sector in your high voltage driver and other silicon integrated analog circuits? Would you like to learn how to embed the NVM into your silicon integrated circuit products to improve their performance?This book is written to help you.It provides comprehensive instructions on fabricating the NVM using the same processes you are using to fabricate your logic integrated circuits. We at our eMemory company call this technology the embedded Logic NVM. Because embedded Logic NVM has simple fabrication processes, it has replaced the conventional NVM in many traditional and new applications, including LCD driver, LED driver, MEMS controller, touch panel controller, power management unit, ambient and motion sensor controller, micro controller unit (MCU), security ID setting tag, RFID, NFC, PC camera controller, keyboard controller, and mouse controller. The recent explosive growth of the Logic NVM indicates that it will soon dominate all NVM applications. The embedded Logic NVM was invented and has been implemented in users' applications by the 200+ employees of our eMemory company, who are also the authors and author-assistants of this book.This book covers the following Logic NVM products: One Time Programmable (OTP) memory, Multiple Times Programmable (MTP) memory, Flash memory, and Electrically Erasable Programmable Read Only Memory (EEPROM). The fundamentals of the NVM are described in this book, which include: the physics and operations of the memory transistors, the basic building block of the memory cells and the access circuits.All of these products have been used continuously by the industry worldwide. In-depth readers can attain expert proficiency in the implementation of the embedded Logic NVM technology in their products.
Download or read book Non volatile Memories written by Pierre-Camille Lacaze and published by John Wiley & Sons. This book was released on 2014-12-02 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years.
Download or read book Metal Oxides for Non volatile Memory written by Panagiotis Dimitrakis and published by Elsevier. This book was released on 2022-03-01 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology
Download or read book Fundamentals and Applications of Nano Silicon in Plasmonics and Fullerines written by Munir H. Nayfeh and published by Elsevier. This book was released on 2018-06-29 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals and Applications of Nano Silicon in Plasmonics and Fullerines: Current and Future Trends addresses current and future trends in the application and commercialization of nanosilicon. The book presents current, innovative and prospective applications and products based on nanosilicon and their binary system in the fields of energy harvesting and storage, lighting (solar cells and nano-capacitor and fuel cell devices and nanoLEDs), electronics (nanotransistors and nanomemory, quantum computing, photodetectors for space applications; biomedicine (substance detection, plasmonic treatment of disease, skin and hair care, implantable glucose sensor, capsules for drug delivery and underground water and oil exploration), and art (glass and pottery). Moreover, the book includes material on the use of advanced laser and proximal probes for imaging and manipulation of nanoparticles and atoms. In addition, coverage is given to carbon and how it contrasts and integrates with silicon with additional related applications. This is a valuable resource to all those seeking to learn more about the commercialization of nanosilicon, and to researchers wanting to learn more about emerging nanosilicon applications. Features a variety of designs and operation of nano-devices, helping engineers to make the best use of nanosilicon Contains underlying principles of how nanomaterials work and the variety of applications they provide, giving those new to nanosilicon a fundamental understanding Assesses the viability of various nanoslicon devices for mass production and commercialization, thereby providing an important source of information for engineers
Download or read book Silicon Based Unified Memory Devices and Technology written by Arup Bhattacharyya and published by CRC Press. This book was released on 2017-07-06 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary focus of this book is on basic device concepts, memory cell design, and process technology integration. The first part provides in-depth coverage of conventional nonvolatile memory devices, stack structures from device physics, historical perspectives, and identifies limitations of conventional devices. The second part reviews advances made in reducing and/or eliminating existing limitations of NVM device parameters from the standpoint of device scalability, application extendibility, and reliability. The final part proposes multiple options of silicon based unified (nonvolatile) memory cell concepts and stack designs (SUMs). The book provides Industrial R&D personnel with the knowledge to drive the future memory technology with the established silicon FET-based establishments of their own. It explores application potentials of memory in areas such as robotics, avionics, health-industry, space vehicles, space sciences, bio-imaging, genetics etc.
Download or read book Silicon Compounds Advances in Research and Application 2013 Edition written by and published by ScholarlyEditions. This book was released on 2013-06-21 with total page 810 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Compounds—Advances in Research and Application: 2013 Edition is a ScholarlyEditions™ book that delivers timely, authoritative, and comprehensive information about Silanes. The editors have built Silicon Compounds—Advances in Research and Application: 2013 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Silanes in this book to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Silicon Compounds—Advances in Research and Application: 2013 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.
Download or read book Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films written by Vikram J. Kapoor and published by . This book was released on 1987 with total page 570 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Flash Memories written by Igor Stievano and published by BoD – Books on Demand. This book was released on 2011-09-06 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt: Flash memories and memory systems are key resources for the development of electronic products implementing converging technologies or exploiting solid-state memory disks. This book illustrates state-of-the-art technologies and research studies on Flash memories. Topics in modeling, design, programming, and materials for memories are covered along with real application examples.
Download or read book Gate Stack Engineering for Emerging Polarization based Non volatile Memories written by Milan Pesic and published by BoD – Books on Demand. This book was released on 2017-07-14 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: The hafnium based ferroelectric memories offer a low power consumption, ultra-fast operation, non-volatile retention as well as the small relative cell size as the main requirements for future memories. These remarkable properties of ferroelectric memories make them promising candidates for non-volatile memories that would bridge the speed gap between fast logic and slow off-chip, long term storage. Even though the retention of hafnia based ferroelectric memories can be extrapolated to a ten-year specification target, they suffer from a rather limited endurance. Therefore, this work targets relating the field cycling behavior of hafnia based ferroelectric memories to the physical mechanisms taking place within the film stack. Establishing a correlation between the performance of the device and underlying physical mechanisms is the first step toward understanding the device and engineering guidelines for novel, superior devices. In the frame of this work, an in-depth ferroelectric and dielectric characterization, analysis and TEM study was combined with comprehensive modeling approach. Drift and diffusion based vacancy redistribution was found as the main cause for the phase transformation and consequent increase of the remnant polarization, while domain pinning and defect generation is identified to be responsible for the device fatigue. Finally, based on Landau theory, a simple way to utilize the high endurance strength of anti-ferroelectric (AFE) materials and achieve non-volatility in state-of-the-art DRAM stacks was proposed and the fabrication of the world's first non-volatile AFE-RAM is reported. These findings represent an important milestone and pave the way toward a commercialization of (anti)ferroelectric non-volatile memories based on simple binary-oxides.
Download or read book Device Applications of Silicon Nanocrystals and Nanostructures written by Nobuyoshi Koshida and published by Springer Science & Business Media. This book was released on 2008-12-11 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent developments in the technology of silicon nanocrystals and silicon nanostructures, where quantum-size effects are important, are systematically described including examples of device applications. Due to the strong quantum confinement effect, the material properties are freed from the usual indirect- or direct-bandgap regime, and the optical, electrical, thermal, and chemical properties of these nanocrystalline and nanostructured semiconductors are drastically changed from those of bulk silicon. In addition to efficient visible luminescence, various other useful material functions are induced in nanocrystalline silicon and periodic silicon nanostructures. Some novel devices and applications, in fields such as photonics (electroluminescence diode, microcavity, and waveguide), electronics (single-electron device, spin transistor, nonvolatile memory, and ballistic electron emitter), acoustics, and biology, have been developed by the use of these quantum-induced functions in ways different from the conventional scaling principle for ULSI.
Download or read book Logic Non volatile Memory written by Charles Ching-Hsiang Hsu and published by World Scientific. This book was released on 2014 with total page 319 pages. Available in PDF, EPUB and Kindle. Book excerpt: Would you like to add the capabilities of the Non-Volatile Memory (NVM) as a storage element in your silicon integrated logic circuits, and as a trimming sector in your high voltage driver and other silicon integrated analog circuits? Would you like to learn how to embed the NVM into your silicon integrated circuit products to improve their performance? This book is written to help you. It provides comprehensive instructions on fabricating the NVM using the same processes you are using to fabricate your logic integrated circuits. We at our eMemory company call this technology the embedded Logic NVM. Because embedded Logic NVM has simple fabrication processes, it has replaced the conventional NVM in many traditional and new applications, including LCD driver, LED driver, MEMS controller, touch panel controller, power management unit, ambient and motion sensor controller, micro controller unit (MCU), security ID setting tag, RFID, NFC, PC camera controller, keyboard controller, and mouse controller. The recent explosive growth of the Logic NVM indicates that it will soon dominate all NVM applications. The embedded Logic NVM was invented and has been implemented in users' applications by the 200+ employees of our eMemory company, who are also the authors and author-assistants of this book. This book covers the following Logic NVM products: One Time Programmable (OTP) memory, Multiple Times Programmable (MTP) memory, Flash memory, and Electrically Erasable Programmable Read Only Memory (EEPROM). The fundamentals of the NVM are described in this book, which include: the physics and operations of the memory transistors, the basic building block of the memory cells and the access circuits. All of these products have been used continuously by the industry worldwide. In-depth readers can attain expert proficiency in the implementation of the embedded Logic NVM technology in their products.
Download or read book Emerging Memories written by Betty Prince and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging Memories: Technologies and Trends attempts to provide background and a description of the basic technology, function and properties of emerging as well as discussing potentially suitable applications. This book explores a range of new memory products and technologies. The concept for some of these memories has been around for years. A few completely new. Some involve materials that have been in volume production in other type of devices for some time. Ferro-electrics, for example, have been used in capacitors for more than 30 years. In addition to looking at using known devices and materials in novel ways, there are new technologies being investigated such as DNA memories, light memories, molecular memories, and carbon nanotube memories, as well as the new polymer memories which hold the potential for the significant manufacturing reduction. Emerging Memories: Technologies and Trends is a useful reference for the professional engineer in the semiconductor industry.
Download or read book Thin Films and Porous Materials written by N. Gabouze and published by Trans Tech Publications Ltd. This book was released on 2009-01-06 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: This special edition compromises a selection of papers presented at the International Conference on Thin Films and Porous Materials (ICTFPM 2008). The main goal of the volume is to report the most recent scientific findings, and to highlight current challenges and opportunities in the promising field of porous materials and thin films. Volume is indexed by Thomson Reuters CPCI-S (WoS).
