Download or read book Silicon Nanocrystals and Defect States in Silicon Rich Silicon Nitride for Optoelectronic Applications written by Shakil Mohammed and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Research interest in silicon nanocrystals (Si-NC) has increased significantly as a result of the desire to improve the light emission efficiency of bulk silicon. Si-NCs embedded in silicon nitride have desirable characteristics for optoelectronic applications since they can increase the tunneling probability and have a lower tunneling barrier than silicon oxide. Higher tunneling probability is an important feature as it can be used to develop more efficient electroluminescent and photovoltaic devices. In this dissertation, the Si-rich Si3N4 (SRN) was prepared using low pressure chemical vapor deposition (LPCVD) and RF sputtering followed by high temperature treatment in order to precipitate Si-NCs within the silicon nitride matrix. Several different characterization techniques were used on the Si-NC samples in order to understand the physical, structural, optical and electrical behavior of the nanocrystals. Characterization techniques used in this analysis included photoluminescence (PL), time resolved PL, X-ray diffraction, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, Raman spectroscopy, transmission electron microscopy, ellipsometry and capacitance-voltage (C-V) measurements. Silicon nitride was found to contain a high defect density which suppressed the PL effect from the Si-NC. The PL observed from each different SRN sample correlated to defect states, namely dangling bonds and oxygen related bonding. Although substantial evidence suggested that Si-NC had formed within the SRN sample, a PL effect due to the quantum confinement effect (QCE) from the nanocrystals could not be detected. However, Si rich SiOx samples exhibited excellent PL which correlated with the QCE for an indirect bandgap semiconductor. Further experiments were conducted using forming gas in order to passivate the defects in the SRN. Though significant changes in PL was not achieved due to passivation, the electrical behavior from the SRN indicated that the intrinsically charged defects may have been passivated.
Download or read book Silicon Nanocrystals written by Lorenzo Pavesi and published by John Wiley & Sons. This book was released on 2010-02-02 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: This unique collection of knowledge represents a comprehensive treatment of the fundamental and practical consequences of size reduction in silicon crystals. This clearly structured reference introduces readers to the optical, electrical and thermal properties of silicon nanocrystals that arise from their greatly reduced dimensions. It covers their synthesis and characterization from both chemical and physical viewpoints, including ion implantation, colloidal synthesis and vapor deposition methods. A major part of the text is devoted to applications in microelectronics as well as photonics and nanobiotechnology, making this of great interest to the high-tech industry.
Download or read book Optical and Electrical Properties of Silicon Nanocrystals Embedded in Silicon Rich Nitride Structures written by Joseph Warga and published by . This book was released on 2009 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Device Applications of Silicon Nanocrystals and Nanostructures written by Nobuyoshi Koshida and published by Springer Science & Business Media. This book was released on 2008-12-11 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent developments in the technology of silicon nanocrystals and silicon nanostructures, where quantum-size effects are important, are systematically described including examples of device applications. Due to the strong quantum confinement effect, the material properties are freed from the usual indirect- or direct-bandgap regime, and the optical, electrical, thermal, and chemical properties of these nanocrystalline and nanostructured semiconductors are drastically changed from those of bulk silicon. In addition to efficient visible luminescence, various other useful material functions are induced in nanocrystalline silicon and periodic silicon nanostructures. Some novel devices and applications, in fields such as photonics (electroluminescence diode, microcavity, and waveguide), electronics (single-electron device, spin transistor, nonvolatile memory, and ballistic electron emitter), acoustics, and biology, have been developed by the use of these quantum-induced functions in ways different from the conventional scaling principle for ULSI.
Download or read book Silicon Nitride written by Emiliano Jose Hierra and published by Nova Science Publishers. This book was released on 2012 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon nitride (Si3N4) ceramic is used in numerous applications because of its superior properties, such as high-temperature strength, good oxidation resistance and low thermal expansion coefficient. In this book, the authors present current research in the study of the synthesis, properties and applications of silicon nitride. Topics include the optical and vibration properties of silicon rich nitride; high temperature oxidation of silicon nitride based ceramics; low temperature preparation of phosphate bonded silicon nitride ceramics with high mechanical strength; the SPS-sintering process and use of ceramics for high-temperature engineering applications; synthesis and properties of silicon nitride coatings; and the use of silicon nitride as biomaterial.
Download or read book Silicon Nitride Silicon Dioxide and Emerging Dielectrics 11 written by Electrochemical society. Meeting and published by The Electrochemical Society. This book was released on 2011 with total page 950 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions contains the peer-reviewed full length papers of the International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics held May 1-6, 2011 in Montreal as a part of the 219th Meeting of The Electrochemical Society. The papers address a very diverse range of topics. In addition to the deposition and characterization of the dielectrics, more specific topics addressed by the papers include applications, device characterization and reliability, interface states, interface traps, defects, transistor and gate oxide studies, and modeling.
Download or read book Silicon Nitride in Electronics written by Vi︠a︡cheslav Ivanovich Belyĭ and published by Elsevier Publishing Company. This book was released on 1988 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is an English version, expanded and brought up to date, of the Russian book published in 1982. It has been written by a group of authors - chemists and physicists - and is designed particularly for specialists who are developing semiconductor devices. Silicon nitride has long been familiar as a material used in the process of manufacturing fire-proof products. During the past decade, it has come into use as a thin dielectric film in electronics, and at present silicon nitride synthesis underlies the basic technology for integrated circuits. The monograph discusses the characteristics that determine the process of synthesis of silicon nitride films, their structure, chemical composition, optical and electrophysical properties, as well as various applications of silicon nitride in electronics.
Download or read book Silicon Nitride Silicon Dioxide and Emerging Dielectrics 10 written by R. Ekwal Sah and published by The Electrochemical Society. This book was released on 2009 with total page 871 pages. Available in PDF, EPUB and Kindle. Book excerpt: The issue of ECS Transactions contains papers presented at the Tenth International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics held in San Francisco on May 24-29, 2009. The papers address a very wide range of fabrication and characterization techniques, and applications of thin dielectric films in microelectronic and optoelectronic devices. More specific topics addressed by the papers include reliability, interface states, gate oxides, passivation, and dielctric breakdown.
Download or read book Silicon Nitride for Microelectronic Applications written by J. T. Milek and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: This survey is concerned with the use of silicon nitride in the semi conductor and microelectronics industries. The Handbook of Electronic Materials, volume 3, comprises part 1 of this survey and includes preparation and properties information. This report was prepared by Hughes Aircraft Company, Culver City, California under Contract Number F336lS-70-C-1348. The work was admini stered under the direction of the Air Force Materials Laboratory, Air Force Systems Command, Wright-Patterson Air Force Base, Ohio, with Hr. B. Emrich, Project Engineer. The Electronic Properties Information Center (EPIC) is a designated Information Analysis Center of the Department of Defense, authorized to pro vide information to the entire DoD community. The purpose of the Center is to provide a highly competent source of information and data on the electronic, optical and magnetic properties of materials of value to the Department of Defense. Its major function is to evaluate, compile and publish the experi mental data from the world's unclassified literature concerned with the properties of materials. All materials relevant to the field of electronics are within the scope of EPIC: insulators, semiconductors, metals, super conductors, ferrites, ferroelectrics, ferromagnetics, electroluminescents, thermionic emitters and optical materials. The Center's scope includes information on over 100 basic properties of materials; information generally regarded as being in the area of devices and/or circuitry is excluded. v CONTENTS Foreword. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Diffusion Mask Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . '" 11 Glass-to-Metal Seals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Passivation Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Isolation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Memory Devices. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Capacitors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 Radiation Hardening Applications . . . . . . . . . . . . . . . •. . . . . . . . .
Download or read book Silicon Nitride for Microelectronic Applications written by John T. Milek and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: The large amount of literature on the technology of thin film silicon nitride indi cates the interest of the Department of Defense, NASA and the semiconductor industry in the development and full utilization of the material. This survey is concerned only with the thin film characteristics and properties of silicon nitride as currently utilized by the semiconductor or microelectronics industry. It also includes the various methods of preparation. Applications in microelectronic devices and circuits are to be provided in Part 2 of the survey. Some bulk silicon nitride property data is included for basic reference and comparison purposes. The survey specifically excludes references and information not within the public domain. ACKNOWLEDGEMENT This survey was generated under U.S. Air Force Contract F33615-70-C-1348, with Mr. B.R. Emrich (MAAM) Air Force Materials Laboratory, Wright-Patterson Air Force Base, Ohio acting as Project Engineer. The author would like to acknowledge the assis tance of Dr. Judd Q. Bartling, Litton Systems, Inc., Guidance and Control Systems Division, Woodland Hills, California and Dr. Thomas C. Hall, Hughes Aircraft Company, Culver City, California in reviewing the survey. v CONTENTS Preface. i Introduction 1 Literature Review. 1 Bulk Characteristics 1 Technology Overview. 2 References 4 Methods of Preparation • 5 Introduction • 5 Direct Nitridation Method 8 Evaporation Method • 9 Glow Discharge Method. 10 Ion Beam Method. 13 Sputtering Methods 13 Pyrolytic Methods. 15 Silane and Ammonia Reaction 15 Silicon Tetrachloride and Tetrafluoride Reaction. 24 Silane and Hydrazine Reaction 27 Production Operations. 28 Equipment.
Download or read book Structural and Optical Properties of Porous Silicon Nanostructures written by G Amato and published by CRC Press. This book was released on 1998-02-25 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume provides a comprehensive review of the experimental and theoretical aspects of the optical and transport properties of nanoporous silicon, their relation to the microscopic structure of nanocrystals, and the application of porous silicon in optical devices. As porous silicon is an ideal substance for the modelling of optical processes in nanocrystalline materials, this volume also is an excellent reference source on the more general subject of the structural and optical properties of nanocrystalline semiconductors.
Download or read book Nanostructured Silicon for Photonics written by Z. Gaburro and published by Trans Tech Publications Ltd. This book was released on 2006-05-01 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: The use of light to channel signals around electronic chips could solve several current problems in microelectronic evolution including: power dissipation, interconnect bottlenecks, input/output from/to optical communication channels, poor signal bandwidth, etc. It is unfortunate that silicon is not a good photonic material: it has a poor light-emission efficiency and exhibits a negligible electro-optical effect. Silicon photonics is a field having the objective of improving the physical properties of silicon; thus turning it into a photonic material and permitting the full convergence of electronics and photonics.
Download or read book Silicon Nitride Silicon Dioxide Thin Insulating Films and Other Emerging Diele c trics VIII written by Ram Ekwal Sah and published by The Electrochemical Society. This book was released on 2005 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Nitride Silicon Dioxide and Emerging Dielectrics 9 written by Ram Ekwal Sah and published by The Electrochemical Society. This book was released on 2007 with total page 863 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions contains the papers presented in the symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectics held May 6-11, 2007 in Chicago. Papers were presented on deposition, characterization and applications of the dielectrics including high- and low-k dielectrics, as well as interface states, device characterization, reliabiliy and modeling.
Download or read book Nanosilicon written by Anatoly A. Ischenko and published by CRC Press. This book was released on 2014-07-23 with total page 734 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanosilicon: Properties, Synthesis, Applications, Methods of Analysis and Control examines the latest developments on the physics and chemistry of nanosilicon. The book focuses on methods for producing nanosilicon, its electronic and optical properties, research methods to characterize its spectral and structural properties, and its possible applic
Download or read book Silicon Nanocrystals in Various Dielectric Matrices Structural and Optical Properties written by Anastasiya Zelenina and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Zusammenfassung: AbstractThis dissertation is focused on the fundamental investigation of Si nanocrystals formed in annealed Si rich/stoichiometric dielectric multilayered structures. The films are prepared by size-controlled superlattices approach previously widely applied to SiOx/SiO2 superlattices. While a deep understanding of fundamental properties of Si nanocrystals in SiOx matrix has been already achieved, most of the results published on silicon nanocrystals in SiNx do not represent a clear understanding and sometimes even contradict to each other.Thereby, a starting point of the present research is a detailed study of Si nanocrystals embedded in Si nitride matrix. A careful development of plasma-enhanced chemical vapor deposition parameters allowed the deposition of optimized SiNx/Si3N4 superlattices of various SiNx thicknesses, which were further annealed in order to form Si nanocrystals of various sizes. Based on transmission electron microscopy and X-ray diffraction analysis, the formation of size-controlled Si nanocrystals of various sizes is confirmed. Despite photoluminescence spectra of these samples demonstrate the expected PL blue shift with the decrease of Si nanocrystal size, the shift is confirmed to be an optical artifact. The results presented here can explain a disagreement of the recent reports published on Si nanocrystals in SiNx matrix by other groups, as the photoluminescence peak shift is sometimes wrongly interpreted as nanocrystal size effect. Additionally, according to the concluded issues, novel hetero-combinations, which contain both silicon nitride and silicon oxide sublayers are proposed and realized. Although SiNx/SiO2 and SiOxNy/Si3N4 hetero-structures might show some benefits in optical and electrical properties compared to the standard SiOx/SiO2 and SiNx/Si3N4 superlattices, they have been only very barely studied previously. In the present work it is shown that high-temperature annealing leads to the destruction of SiNx/SiO2 hetero-superlattice, and Si nanocrystals of uncontrollable sizes irregularly distributed within the film are formed. At the same time SiOxNy/Si3N4 hetero-structure sustains high-temperature annealing and size-controlled Si nanocrystals demonstrate quantum luminescence
Download or read book Optical Properties of Semiconductor insulator Composites written by Lisa Brackenbury Maurice and published by . This book was released on 1989 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
