Download or read book Silicon Germanium Carbon Alloys written by S. Pantellides and published by CRC Press. This book was released on 2002-07-26 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials

Download or read book Applications of Silicon Germanium Heterostructure Devices written by C.K Maiti and published by CRC Press. This book was released on 2001-07-20 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st

Download or read book Silicon Germanium and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevic

Download or read book Epitaxial Growth of Si Ge Sn Alloys for Optoelectronic Device Application written by Aboozar Mosleh and published by . This book was released on 2015 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microelectronics industry has experienced a tremendous change over the last few decades and has shown that Moore's law has been followed by doubling the number of transistors on the chip every 18 months. However, continuous scaling down of the transistors size is reaching the physical limits and data transfer through metal interconnects will not be able to catch up with the increasing data processing speed in the future. Therefore, optical data transfer between chips and on-chip has been widely investigated. Silicon based optoelectronics has received phenomenal attention since Si has been the core material on which microelectronic industry has been built. However, due to the indirect bandgap nature of Si, its optical characteristics fall short compared to similar III-IV semiconductors. The efforts in III-V incorporation on Si substrate have not been successful due to the incompatibility of the growth with complementary metal oxide semiconductor processing. Germanium has been studied in order to develop a Si compatible technology and it has been shown that a direct bandgap material is achievable by alloying Sn in Ge. Further investigations on Si-Ge-Sn material system showed its viability as a technology that can be used for fabrication of Si-compatible light source and detectors. The work presented in this dissertation is focused on the low temperature growth of Si-Ge-Sn alloys. High quality crystalline homoepitaxial silicon films were deposited at 250 °C using a plasma-enhanced chemical vapor deposition (PECVD) system. Strain-relaxed Ge and SiGe films were also grown on Si substrate at 350-550 °C in a reduced pressure CVD system. Commercial precursors of silane and germane were used to grow the films at different chamber pressures. Germanium-tin and silicon-germanium-tin alloys were grown by a cold-wall chemical vapor deposition system at low temperatures (300-450 °C) directly on Si substrates. Two different delivery systems were adopted for the delivery of stannic chloride and deuterated stannane as Sn precursors along with silane and germane. Crystallinity and growth quality of the films were investigated through material characterization methods including X-ray diffraction, scanning electron microscopy and transmission electron microscopy. Elemental characterization of the films was done using Rutherford backscattering measurement and energy-dispersive X-ray spectroscopy. Moreover, optical characterizations were performed using Raman spectroscopy and photoluminescence on the samples to investigate Sn incorporation in the films. Additionally, compressively strained (

Download or read book Silicon Germanium Alloys for Photovoltaic Applications written by Ammar Nayfeh and published by Elsevier. This book was released on 2023-03-09 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-Germanium Alloys for Photovoltaic Applications provides a comprehensive look at the use of Silicon-Germanium alloys Si1-xGex in photovoltaics. Different methods of Si1-xGex alloy deposition are reviewed, including their optical and material properties as function of Ge% are summarized, with SiGe use in photovoltaic applications analyzed. Fabrication and characterization of single junction Si1-xGex solar cells on Si using a-Si as emitter is discussed, with a focus on the effect of different Ge%. Further, the book highlights the use Si1-xGex as a template for lattice matched deposition of III-V layers on Si, along with its challenges and benefits, including financial aspects. Finally, fabrication and characterization of single junction GaAsxP1-x cells on Si via Si1-xGex is discussed, along with the simulation and modeling of graded SiGe layers and experimental model verification. Includes a summary of SiGe alloys material properties relevant for solar research, all compiled at one place Presents various simulation models and analysis of SiGe material properties on solar cell performance Includes a cost-analysis for III-V/Si solar cells via SiGe alloys

Download or read book Amorphous Silicon carbon and Silicon germanium Alloys as New Optoelectronic Materials written by Tadeusz Pisarkiewicz and published by . This book was released on 1996 with total page 155 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Germanium Materials and Devices A Market and Technology Overview to 2006 written by R. Szweda and published by Elsevier. This book was released on 2002-11-26 with total page 419 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first edition of Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 examines the development of the silicon germanium business over a six-year period 2001 to 2006. It analyses the trends in markets, technologies and industry structure and profiles all the major players. It is specifically aimed at users and manufacturers of substrates, epiwafers, equipment and devices. The analysis includes a competitive assessment of the market of silicon germanium vs. gallium arsenide, indium phosphide vs. other forms of silicon. Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 is designed to assist with business plans, R&D and manufacturing strategies. It will be an indispensable aid for managers responsible for business development, technology assessment and market research. The report examines the rapid development of silicon germanium from an R&D curiosity to production status. An extensive treatment from materials through processes to devices and applications it encapsulates the entire silicon germanium business of today and assesses future directions. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

Download or read book A Kinetic Model for the Oxidation of Silicon Germanium Alloys written by Mohamed Rabie and published by LAP Lambert Academic Publishing. This book was released on 2010-03 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon germanium alloys have received much attention in recent years for their potential application in high speed and optoelectronics applications. Kinetics of SiGe oxidation need to be well understood for two reasons: (1) to allow predictive process modeling of the oxidation process for technology development; and (2) to give insight into the factors that are responsible for the poor electrical quality of the resulting oxide. Some models have been proposed to explain the outcomes of the oxidation process, yet a complete model is still unavailable. It has been shown that the resulting oxide can be either pure SiO2 or mixed oxides (SiO2 + GeO2). As well, the oxidation process can result in a layered structure of both types of oxides. Based on the understanding of the physical phenomena that occur during the oxidation process, we concluded a physical model that encompasses the explanations reported by other researchers as well as some conclusions we derived.

Download or read book Silicon germanium Alloys for Optoelectrocnic Applications written by Xiaodong Xiao and published by . This book was released on 1993 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Si based Germanium Tin Semiconductor Lasers for Optoelectronic Applications written by Sattar H. Sweilim Al-Kabi and published by . This book was released on 2017 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. The GeSn films were grown on Ge-buffered Si substrates in a reduced pressure chemical vapor deposition system with low-cost SnCl4 and GeH4 precursors. A systematic study was done for thin GeSn films (thickness 400 nm) with Sn composition 5 to 17.5%. The room temperature photoluminescence (PL) spectra were measured that showed a gradual shift of emission peaks towards longer wavelength as Sn composition increases. Strong PL intensity and low defect density indicated high material quality. Moreover, the PL study of n-doped samples showed bandgap narrowing compared to the unintentionally p-doped (boron) thin films with similar Sn compositions. Finally, optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 om were demonstrated using high-quality GeSn films with Sn compositions up to 17.5%. The achieved maximum Sn composition of 17.5% broke the acknowledged Sn incorporation limit using similar deposition chemistry. The highest lasing temperature was measured at 180 K with an active layer thickness as thin as 270 nm. The unprecedented lasing performance is due to the achievement of high material quality and a robust fabrication process. The results reported in this work show a major advancement towards Si-based electrically pumped mid-infrared laser sources for integrated photonics.

Download or read book Ultrafast Carrier Dynamics in Thin Film Hydrogenated Amorphous Silicon and Silicon germanium Alloys written by Josef J. Felver and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Three sets of experiments were conducted using femtosecond transient absorption methods.

Download or read book Expanding the Optical Capabilities of Germanium in the Infrared Range Through Group IV and III V IV Alloy Systems written by Patrick Michael Wallace and published by . This book was released on 2018 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work described in this thesis explores the synthesis of new semiconductors in the Si-Ge-Sn system for application in Si-photonics. Direct gap Ge1-ySny (y=0.12-0.16) alloys with enhanced light emission and absorption are pursued. Monocrystalline layers are grown on Si platforms via epitaxy-driven reactions between Sn- and Ge-hydrides using compositionally graded buffer layers that mitigate lattice mismatch between the epilayer and Si platforms. Prototype p-i-n structures are fabricated and are found to exhibit direct gap electroluminescence and tunable absorption edges between 2200 and 2700 nm indicating applications in LEDs and detectors. Additionally, a low pressure technique is described producing pseudomorphic Ge1-ySny alloys in the compositional range y=0.06-0.17. Synthesis of these materials is achieved at ultra-low temperatures resulting in nearly defect-free films that far exceed the critical thicknesses predicted by thermodynamic considerations, and provide a chemically driven route toward materials with properties typically associated with molecular beam epitaxy. Silicon incorporation into Ge1-ySny yields a new class of Ge1-x-ySixSny (y>x) ternary alloys using reactions between Ge3H8, Si4H10, and SnD4. These materials contain small amounts of Si (x=0.05-0.08) and Sn contents of y=0.1-0.15. Photoluminescence studies indicate an intensity enhancement relative to materials with lower Sn contents (y=0.05-0.09). These materials may serve as thermally robust alternatives to Ge1-ySny for mid-infrared (IR) optoelectronic applications. An extension of the above work is the discovery of a new class of Ge-like Group III-V-IV hybrids with compositions Ga(As1–xPx)Ge3 (x=0.01-0.90) and (GaP)yGe5–2y related to Ge1-x-ySixSny in structure and properties. These materials are prepared by chemical vapor deposition of reactive Ga-hydrides with P(GeH3)3 and As(GeH3)3 custom precursors as the sources of P, As, and Ge incorporating isolated GaAs and GaP donor-acceptor pairs into diamond-like Ge-based structures. Photoluminescence studies reveal bandgaps in the near-IR and large bowing of the optical behavior relative to linear interpolation of the III-V and Ge end members. Similar materials in the Al-Sb-B-P system are also prepared and characterized. The common theme of the above topics is the design and fabrication of new optoelectronic materials that can be fully compatible with Si-based technologies for expanding the optoelectronic capabilities of Ge into the mid-IR and beyond through compositional tuning of the diamond lattice.

Download or read book Optical Properties of Hydrogenated Amorphous Germanium and Silicon germanium Alloys written by Anna Elizabeth Wetsel Tai and published by . This book was released on 1994 with total page 482 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Liquid Phase Epitaxy of Electronic Optical and Optoelectronic Materials written by Peter Capper and published by John Wiley & Sons. This book was released on 2007-08-20 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE. This book covers the bulk growth of semiconductors, i.e. silicon, gallium arsenide, cadmium mercury telluride, indium phosphide, indium antimonide, gallium nitride, cadmium zinc telluride, a range of wide-bandgap II-VI compounds, diamond and silicon carbide, and a wide range of oxides/fluorides (including sapphire and quartz) that are used in many industrial applications. A separate chapter is devoted to the fascinating field of growth in various forms of microgravity, an activity that is approximately 30-years old and which has revealed many interesting features, some of which have been very surprising to experimenters and theoreticians alike. Covers the most important materials within the field The contributors come from a wide variety of countries and include both academics and industrialists, to give a balanced treatment Builds-on an established series known in the community Highly pertinent to current and future developments in telecommunications and computer-processing industries.

Download or read book Materials for Optoelectronic Devices OEICs and Photonics written by H. Schlötterer and published by Elsevier. This book was released on 1991-10-08 with total page 542 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of the contributions in this volume is to give a current overview on the basic properties and applications of semiconductor and nonlinear optical materials for optoelectronics and integrated optics. They provide a cross-linkage between different materials (III-V, II-VI, Si-Ge, glasses, etc.), various sample dimensions (from bulk crystals to quantum dots), and a range of techniques for growth (LPE to MOMBE) and for processing (from surface passivation to ion beams). Major growth techniques and materials are discussed, including the sophisticated technologies required to exploit the exciting properties of low dimensional semiconductors. These proceedings will prove an invaluable guide to the current state of optoelectronic and nonlinear optical materials development, as well as indicating trends and also future markets for optoelectronic devices.

Download or read book Handbook of Laser Technology and Applications written by Chunlei Guo and published by CRC Press. This book was released on 2021-06-23 with total page 733 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive handbook gives a fully updated guide to lasers and laser technologies, including the complete range of their technical applications. This third volume covers modern applications in engineering and technology, including all new and updated case studies spanning telecommunications and data storage to medicine, optical measurement, defense and security, nanomaterials processing and characterization. Key Features: • Offers a complete update of the original, bestselling work, including many brand-new chapters. • Deepens the introduction to fundamentals, from laser design and fabrication to host matrices for solid-state lasers, energy level diagrams, hosting materials, dopant energy levels, and lasers based on nonlinear effects. • Covers new laser types, including quantum cascade lasers, silicon-based lasers, titanium sapphire lasers, terahertz lasers, bismuth-doped fiber lasers, and diode-pumped alkali lasers. • Discusses the latest applications, e.g., lasers in microscopy, high-speed imaging, attosecond metrology, 3D printing, optical atomic clocks, time-resolved spectroscopy, polarization and profile measurements, pulse measurements, and laser-induced fluorescence detection. • Adds new sections on laser materials processing, laser spectroscopy, lasers in imaging, lasers in environmental sciences, and lasers in communications. This handbook is the ideal companion for scientists, engineers, and students working with lasers, including those in optics, electrical engineering, physics, chemistry, biomedicine, and other relevant areas.

Download or read book Amorphous Hydrogenated Silicon Germanium Alloys Suitable for Photoelectronic Applications written by William Paul and published by . This book was released on 1985 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt: