Download or read book Silicon Front end Technology materials Processing and Modelling written by Nicholas E. B. Cowern and published by . This book was released on 1998 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Front End Technology Materials Processing and Modelling written by Nicholas E. B. Cowern and published by Cambridge University Press. This book was released on 2014-06-05 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: As silicon-integrated circuit technology enters the sub-100nm realm, continued progress will depend on a fundamental understanding of the physics of materials processing. The high cost of processing experimental lots and the speed at which new devices brought to the market have created a new emphasis on realistic physical models incorporated in technology CAD (TCAD) simulation tools. The book brings together researchers to review recent developments in the integrated-circuit community and to identify key issues for future research in this field. Results of research on the physical mechanisms involved in silicon device processing are presented both from experimental and theoretical viewpoints. The application of this research to TCAD process simulation models is also addressed. Topics include: shallow junctions and transient enhanced diffusion; extended defects and transient enhanced diffusion; impurities and point defects; implant technology, thin films and surfaces and point defects and diffusion in SiGe.
Download or read book Simulation of Semiconductor Processes and Devices 2001 written by Dimitris Tsoukalas and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.
Download or read book Si Front end Processing written by and published by . This book was released on 1999 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Fifth International Symposium of Process Physics and Modeling in Semiconductor Technology written by C. S. Murthy and published by The Electrochemical Society. This book was released on 1999 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Intrinsic Point Defects Impurities and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Download or read book CMOS Front End Materials and Process Technology Volume 765 written by Materials Research Society. Meeting and published by . This book was released on 2003-09-12 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the future, because fundamental materials and process limits are being approached, continued transistor scaling will not be as straightforward. Future complementary metal-oxide semiconductor (MOS) transistors will require high-permittivity (high-k) gate dielectrics and metal gate electrodes, as well as low-resistance ultrashallow junctions, in order to meet the stringent specifications of the International Technology Roadmap for Semiconductors. Techniques to improve transconductance and drive current may also be required. Process integration issues must be solved, and reliability must be assured, before any new material or processing technique can be used in IC manufacture. A further complication is that the key challenges will differ according to application. This book reports research results from industry, government labs and academia covering a wide scope of front-end process issues for future CMOS technologies. Topics include: advanced materials and structures; high-k dielectrics; advanced gate stack materials; heterogeneous integration and strained Si technologies; ultrashallow junction technology; strained Si and source/drain technology; and laser annealing and silicide processes.
Download or read book High Purity Silicon VI written by Electrochemical Society. Meeting and published by The Electrochemical Society. This book was released on 2000 with total page 720 pages. Available in PDF, EPUB and Kindle. Book excerpt: "... papers that were presented at the Sixth Symposium on High Purity Silicon held in Phoenix, Arizona at the 198th Meeting of the Electrochemical Society, October 22-27, 2000."--Preface.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Simulation of Semiconductor Processes and Devices 2007 written by Tibor Grasser and published by Springer Science & Business Media. This book was released on 2007-09-18 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presentaƯ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad specƯ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites
Download or read book SiGe and Ge written by David Louis Harame and published by The Electrochemical Society. This book was released on 2006 with total page 1280 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.
Download or read book Laser Annealing Processes in Semiconductor Technology written by Fuccio Cristiano and published by Woodhead Publishing. This book was released on 2021-04-21 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics synthesizes the scientific and technological advances of laser annealing processes for current and emerging nanotechnologies. The book provides an overview of the laser-matter interactions of materials and recent advances in modeling of laser-related phenomena, with the bulk of the book focusing on current and emerging (beyond-CMOS) applications. Reviewed applications include laser annealing of CMOS, group IV semiconductors, superconducting materials, photonic materials, 2D materials. This comprehensive book is ideal for post-graduate students, new entrants, and experienced researchers in academia, research and development in materials science, physics and engineering. Introduces the fundamentals of laser materials and device fabrication methods, including laser-matter interactions and laser-related phenomena Addresses advances in physical modeling and in predictive simulations of laser annealing processes such as atomistic modeling and TCAD simulations Reviews current and emerging applications of laser annealing processes such as CMOS technology and group IV semiconductors
Download or read book Silicon Materials Science and Technology X written by Howard R. Huff and published by The Electrochemical Society. This book was released on 2006 with total page 599 pages. Available in PDF, EPUB and Kindle. Book excerpt: This was the tenth symposium of the International Symposium on Silcon Material Science and Technology, going back to 1969. This issue provides a unique historical record of the program and will aid in the understanding of silicon materials over the last 35 years.
Download or read book GaN and Related Alloys Volume 537 written by S. J. Pearton and published by . This book was released on 1999-09-14 with total page 1056 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high-density information storage, white lighting for outdoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and covert undersea communications. Progress is been reported in the growth of thick layers on patterned substrates by various methods, leading to lower overall defect concentrations and improved current-voltage and reliability characteristics. The rapidly increasing market for blue/green LEDs is also noted by the entry of a number of new companies to the field. While these emitter technologies continue to be dominated by MOCVD material, there are exciting reports of UV detectors and HFET structures grown by MBE with device performance at least as good as by MOCVD. Topics include: GaN electronic and photonic devices; laser diodes and spectroscopy; electronic devices and processing; quantum dots and processing; novel growth, doping and processing and rare-earth doping and optical emission.
Download or read book Design for Manufacturability written by Artur Balasinski and published by Springer Science & Business Media. This book was released on 2013-10-05 with total page 283 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains integrated circuit design for manufacturability (DfM) at the product level (packaging, applications) and applies engineering DfM principles to the latest standards of product development at 22 nm technology nodes. It is a valuable guide for layout designers, packaging engineers and quality engineers, covering DfM development from 1D to 4D, involving IC design flow setup, best practices, links to manufacturing and product definition, for process technologies down to 22 nm node, and product families including memories, logic, system-on-chip and system-in-package.
Download or read book Silicon Technologies written by Annie Baudrant and published by John Wiley & Sons. This book was released on 2013-05-10 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main purpose of this book is to remind new engineers in silicon foundry, the fundamental physical and chemical rules in major Front end treatments: oxidation, epitaxy, ion implantation and impurities diffusion.
Download or read book III V and IV IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics Volume 535 written by S. A. Ringel and published by . This book was released on 1999-08-11 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the proceedings of two symposia - 'Integration of Dissimilar Materials in Micro- and Optoelectronics' and 'III-V and SiGe Group IV Device/IC Processing Challenges for Commercial Applications'. The publication stems from the desire to achieve new levels of device functionality and higher levels of performance via integration of devices based on dissimilar semiconductors, where the constraint of lattice-matching on the breadth of attainable devices can be reduced. It covers fundamental topics germane to integration of a wide range of dissimilar materials spanning wide-bandgap III-V nitrides, III-V/Si integration, II-VI and II-VI/III-V compounds, heterovalent structures, oxides, photonic bandgap structures and others. Topics such as compliancy, dislocation control, selective area growth, bonding methodologies, etc. are featured. It also addresses processing issues in the manufacturing of III-V and Si-based heterostructures for commercial products. Here, the success enjoyed by silicon germanium technology is contrasted by the promise of silicon-carbon alloys which have opportunities and challenges for the new generation of process developers.
