Download or read book Silicon Carbide and Related Materials 2018 written by Peter M. Gammon and published by Trans Tech Publications Ltd. This book was released on 2019-07-19 with total page 916 pages. Available in PDF, EPUB and Kindle. Book excerpt: 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK

Download or read book Silicon Carbide and Related Materials 2018 written by Peter M. Gammon and published by . This book was released on 2019 with total page 883 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide and Related Materials 2018 written by Peter M. Gammon and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains selected papers from the 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), held in Birmingham, UK, in September 2018. Researchers discussed the latest progress in the field of silicon carbide semiconductors, including their development and production, and their application in the power electronic devices. The papers address silicon carbide growth, including bulk, epitaxial, and thin film growth; theory and characterization, including fundamentals and material properties, point and extended defects, and surfaces and interfaces; processing, focusing on doping, implantation, and contact, dielectric growth and characterization, and etching and machining; devices, including diodes, power MOSFETs, JFETs and IGBTs; reliability, circuits and applications. The contributors are academics and industrialists from around the world. Silicon Carbide, Silicon Carbide Polytypes, Defects, Dislocation, Silicon Oxide Interface, Epitaxial Growth, Characterization, Processing, Wide Bandgap Semiconductor, Bulk Growth, Power Electronics, Semiconductor Devices Materials Science, Manufacturing, Electronics.

Download or read book Semiconductors Silicon Carbide and Related Materials written by Min Lu and published by Trans Tech Publications Ltd. This book was released on 2019-05-17 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt: Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) Selected, peer reviewed papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018), July 9-12, 2018, Beijing, China

Download or read book Semiconductors Silicon Carbide and Related Materials written by Min Lu (Engineer) and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2018) was held on July 9-12, 2018 in Beijing, China. This collection compiled by results of this conference and reflect new developments in the areas of wide bandgap semiconductors (SiC, GaN, Ga2O3, and etc.) and their device fabrication, including advances in the bulk and epitaxial growth, material structure and property, photoelectron and electronic device. We hope that this edition will be interesting and useful for many specialists from the area of research and designing of semiconductor materials and semiconductor devices. Semiconductors, Silicon Carbide, Graphene, Crystal Growth, Epitaxial Growth, Substrate, Thin Films, Vapor Deposition, High-Temperature Thermal Oxidation, SiC MOSFET Structure, Microelectronics Devices Materials Science, Electronics, Nanoscience.

Download or read book Silicon Carbide and Related Materials 2003 written by Roland Madar and published by Trans Tech Publications Ltd. This book was released on 2004-06-15 with total page 1548 pages. Available in PDF, EPUB and Kindle. Book excerpt: Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use. Volume is indexed by Thomson Reuters CPCI-S (WoS).

Download or read book Silicon Carbide and Related Materials 2019 written by Hiroshi Yano and published by Trans Tech Publications Ltd. This book was released on 2020-07-28 with total page 1196 pages. Available in PDF, EPUB and Kindle. Book excerpt: Selected peer-reviewed papers from International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019) Selected, peer-reviewed papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan

Download or read book Silicon Carbide and Related Materials 2003 written by Roland Madar and published by . This book was released on 2002 with total page 908 pages. Available in PDF, EPUB and Kindle. Book excerpt: Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use. This two-volume edition records the written versions of 364 contributed papers and 26 invited talks, presented at the Tenth International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), held in Lyon, France, from the 5th to the 10th October, 2003. A total of 19 different countries were represented. These proceedings give the latest overview of the fundamental topics which currently drive the development of a competitive SiC technology. They cover bulk and epitaxial growth, the properties of the resultant substrates and layers, and the processing issues involved in developing SiC electronic devices applications.

Download or read book Silicon carbide and related materials 1999 ICSCRM 99 proceedings of the International Conference on Silicon Carbide and Related Materials 1999 Research Triangle Park North Carolina USA October 10 15 1999 1 2000 written by Calvin H. Carter and published by . This book was released on 2000 with total page 828 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide is the semiconductor of choice for new applications including electric power devices, high frequency devices, high temperature devices, and radiation resistant devices. The III-Nitride compound semiconductors are well suited for optoelectronics and are promising materials for high frequency devices. This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99), held October 10-15, 1999, at Research Triangle Park, North Carolina. The growth of this biennial international conference to over 650 participants from 25 countries attests to the rapidly increasing interest in large bandgap semiconductors in both academia and industry. These volumes contain 401 papers, 19 of which were invited. The principal topics organized as chapters are: 1) SiC bulk growth, 2) SiC epitaxy and thin film growth, 3) physical properties of SiC (structure, surfaces and interfaces, optical and electrical properties, and magnetic resonance), 4) processing of SiC, 5) SiC devices, 6) growth of III-Nitrides and related materials, 6) physical properties of III-Nitrides, and 8) III-Nitrides: processing and devices.

Download or read book Silicon Carbide and Related Materials Proceedings of the Fifth Conference 1 3 November 1993 Washington DC USA written by Michael G. Spencer and published by CRC Press. This book was released on 1994-06-29 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt: USA companies working in this area include Westinghouse. This material is being investigated primarily in the USA, Japan and Russia alongside that into wide-gap compounds which feature similar characteristics. Applications include high temperature ultra-violet lasers, photodiodes, photodetectors, blue LEDs, high power microwave applications in radar and transmitter devices Special sale to delegates 200 @ 35 Previous volumes in series published by Springer Leading workers in field include Pavlidis (MIT) and Choyke (Pittsburgh, Dept Phys) Feng author is also presenting paper Research in this area is expanding

Download or read book Silicon Carbide III Nitrides and Related Materials written by Gerhard Pensl and published by Trans Tech Publications Ltd. This book was released on 1998-02-01 with total page 1606 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). This two-volume set documents the present understanding of many topics of interest, such as the growth of bulk crystals, the growth of epitaxial layers, theoretical modelling, the characterization of as-grown material, the development of suitable processes and of electronic devices which can operate under extreme conditions and exhibit outstanding properties.

Download or read book Silicon Carbide and Related Materials 2013 written by Hajime Okumura and published by Trans Tech Publications Ltd. This book was released on 2014-02-26 with total page 1246 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials. Volume is indexed by Thomson Reuters CPCI-S (WoS). The 283 papers are grouped as follows: Chapter 1: SiC Bulk Growth; Chapter 2: SiC Epitaxial Growth; Chapter 3: Physical Properties and Characterization of SiC; Chapter 4: Processing of SiC; Chapter 5: Devices and Circuits; Chapter 6: Related Materials.

Download or read book Silicon Carbide and Related Materials 1999 written by and published by . This book was released on 2000 with total page 1684 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide and Related Materials 2005 written by Robert P. Devaty and published by Trans Tech Publications Ltd. This book was released on 2006-10-15 with total page 1670 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as light-emitters and sensors which have to operate under harsh conditions.

Download or read book Materials for Electronics Silicon Carbide and Related Materials written by Min Lu and published by Trans Tech Publications Ltd. This book was released on 2020-11-16 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: Selected peer-reviewed full text papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2019) Selected peer-reviewed papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2019), July 17-20, 2019, Beijing, China

Download or read book Silicon Carbide and Related Materials written by and published by . This book was released on 2006 with total page 852 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Carbide and Related Materials 2014 written by Didier Chaussende and published by Trans Tech Publications Ltd. This book was released on 2015-06-30 with total page 1078 pages. Available in PDF, EPUB and Kindle. Book excerpt: Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France